Abstract: Provided is a rolled copper foil for a lithium ion battery current collector, which has good adhesion to a negative electrode active material, generates less metal powder during ultrasonic welding, and has a rust prevention property. In the rolled copper foil for a lithium ion battery current collector, a surface of the copper foil has a BTA film, the BTA film has a thickness of 0.6 nm or more and 4.6 nm or less, and the rolled copper foil satisfies the following relationships: 40?wet tension [mN]/m]+thickness of BTA film [nm]×10?80; 0.01?arithmetic average roughness Ra [?m]?0.25; and wet tension [mN/m]?35.

Abstract: The purpose of the present invention is to provide a stannous oxide, which has excellent solubility and resistance to oxidation, from a stannous oxide powder comprising a stannous oxide and inevitable impurities, the stannous oxide powder having a stannous oxide content of 99.99 mass % or more in dry mass, a specific surface area of less than 0.5 m2/g, a D50 particle size of 20 to 60 ?m, and a half width of the particle size distribution of 5 to 30 ?m.

Abstract: Provided is a method for producing lithium carbonate from lithium ion battery waste, the lithium ion battery waste including battery positive material components containing Li and at least one metal selected from the group consisting of Co, Ni and Mn, wherein, after subjecting the lithium ion battery waste to a wet process, thereby separating the at least one metal of the battery positive material components from the lithium ion battery waste to obtain crude lithium carbonate, the method includes: a dissolution step of dissolving the crude lithium carbonate in a liquid while feeding a carbon dioxide gas; and a decarbonization step of heating a lithium dissolved solution obtained in the dissolution step to release carbonic acid, and wherein when dissolving the crude lithium carbonate in the liquid in the dissolution step, the liquid is stirred in a reaction vessel using a stirrer, and a ratio of a diameter (d) of a stirring blade of the stirrer to an inner diameter (D) of the reaction vessel (d/D) is from 0.

Abstract: Provided is a stable CdZnTe monocrystalline substrate having a small leakage current even when a high voltage is applied and having a lower variation in resistivity with respect to variations in applied voltage values. A semiconductor wafer comprising a cadmium zinc telluride monocrystal having a zinc concentration of 4.0 at % or more and 6.5 at % or less and a chlorine concentration of 0.1 ppm by mass or more and 5.0 ppm by mass or less, wherein the semiconductor wafer has a resistivity of 1.0×107 ?cm or more and 1.0×108 ?cm or less when a voltage of 900 V is applied, and wherein a ratio (variation ratio) of the resistivity at application of 0 V to the resistivity at application of a voltage of 900 V is 20% or less.

Abstract: The present invention relates to a method for treating lithium ion battery scrap containing Li, Ni, Co, Mn, Al, Cu and Fe, the method comprising carrying out a calcination step, a crushing step and a sieving step in this order, and after the steps, the method comprising: a leaching step of leaching the lithium ion battery scrap by adding it to an acidic solution to leave at least a part of Cu as a solid; a Fe/Al removal step comprising allowing a leached solution obtained in the leaching step to pass through a Fe removal process for separating and removing Fe by addition of an oxidizing agent and an Al removal process for separating and removing a part of Al by neutralization in any order; an Al/Mn extraction step of extracting and removing a residue of Al and Mn from a separated solution obtained in the Fe/Al removal step by solvent extraction; a Co recovery step of extracting and back-extracting Co from a first extracted solution obtained in the Al/Mn extraction step by solvent extraction and recovering the

Abstract: Providing a method of recovering Cu from copper ore containing Hg. A method for recovering Cu from copper ore, the method comprising: (A) providing copper ore containing Hg with an amount of 0.2 ppm or more; (B) treating the copper ore to leach Cu and Hg with use of solution containing iodide ions and Fe (3+); and (C) treating post-leaching solution with activated carbon to absorb the iodide ions and Hg.

Abstract: Provided is a method for removing a linear object, a device for removing a linear object, and a method for processing electronic/electrical equipment component waste, which can improve separation efficiency.

Abstract: Provided is a method of producing a high purity molybdenum oxychloride by including means of sublimating and reaggregating a raw material molybdenum oxychloride in a reduced-pressure atmosphere, or means of retaining a gaseous raw material molybdenum oxychloride, which was synthesized in a vapor phase, in a certain temperature range, and thereby growing crystals to obtain a higher purity molybdenum oxychloride having a high bulk density and high hygroscopicity resistance.

Abstract: There is provided a tungsten sputtering target that can provide a film deposition rate with less fluctuation over the target life. A tungsten sputtering target, wherein an area ratio of crystal grains having any of {100}, {110} and {111} planes oriented to a sputtering surface is 30% or less for any of the orientation planes, and an area ratio in total of crystal grains having orientation planes oriented to the sputtering surface other than {100}, {110} and {111} planes is 46% or more, the area ratio being obtained by an analysis of a cross section perpendicular to the sputtering surface with an inverse pole figure mapping using electron backscatter diffraction.

Abstract: According to one of various aspects of the present invention, a tungsten sputtering target has a purity of tungsten is 5 N (99.999% by weight) or more, and an impurity of carbon and an impurity of oxygen contained in tungsten are 50 ppm by weight or less, respectively, and an average grain size of tungsten crystal is more than 100 ?m.

Abstract: Provided is a sputtering target, the sputtering target containing 0.05 at % or more of Bi and having a total content of metal oxides of from 10 vol % to 60 vol %, the balance containing at least Co and Pt.

Abstract: Provided is a semiconductor material having improved oxidation resistance. The semiconductor material has a single crystal represented by the following composition formula: Mg2Sn·Zna??Composition formula: in which, a is a Zn content of from 0.05 to 1 at % relative to Mg2Sn.

Abstract: Provided is an indium phosphide substrate, a semiconductor epitaxial wafer, a method for producing an indium phosphide single-crystal ingot and a method for producing indium phosphide substrate capable of suppressing concave defects. An indium phosphide substrate has a diameter of 100 mm or less, and at least one of surfaces has zero concave defects detected in the topography channel, by irradiating a laser beam of 405 nm wavelength with S-polarized light on the surface.

Abstract: Provided is a copper powder manufactured by means of a wet method, wherein the absolute value of the zeta potential of the copper powder is at least 20 mV. The copper powder can be manufactured so as to reduce the burden of the steps of crushing a dry cake and classification, and there is a sufficient reduction in residual secondary particles.

Abstract: A negative thermal expansion material, being formed from MxSryBazZn2Si2O7 (wherein M is one or more types of Na and Ca, and x+y+z=1, 0<x?0.5, 0.3<z<1.0), and an XRD peak intensity INTR and a background intensity IBG of a primary phase of an orthorhombic crystal structure which exhibits negative expansion characteristics satisfy a relation of INTE/IBG>15. An object of the present invention is to provide a negative thermal expansion material having a low specific gravity, and a negative thermal expansion material having a low Ba content.

Abstract: Provided is an indium phosphide substrate, a semiconductor epitaxial wafer, and a method for producing an indium phosphide substrate, which can satisfactorily suppress warpage of the back surface of the substrate. The indium phosphide substrate includes a main surface for forming an epitaxial crystal layer and a back surface opposite to the main surface, wherein the back surface has a WARP value of 3.5 ?m or less, as measured with the back surface of the indium phosphide substrate facing upward.

Abstract: Provided is an indium phosphide substrate, a semiconductor epitaxial wafer, and a method for producing an indium phosphide substrate, which can satisfactorily suppress warpage of the back surface of the substrate. The indium phosphide substrate includes a main surface for forming an epitaxial crystal layer and a back surface opposite to the main surface, wherein the back surface has a BOW value of ?2.0 to 2.0 ?m, as measured with the back surface of the indium phosphide substrate facing upward.

Abstract: Provided is a sputtering target, comprising: from 0.001 mol % to 0.5 mol % of Bi; from 45 mol % or less of Cr; 45 mol % or less of Pt; 60 mol % or less of Ru; and a total of 1 mol % to 35 mol % of at least one metal oxide, the balance being Co and inevitable impurities.

Abstract: A production method of an additive manufactured object is provided. The method is an EB-based additive manufacturing method of spreading a pure copper powder, preheating the pure copper powder and thereafter partially melting the pure copper powder by scanning the pure copper powder with an electron beam, solidifying the pure copper powder to form a first layer, newly spreading a pure copper powder on the first layer, preheating the pure copper powder and thereafter partially melting the pure copper powder by scanning the pure copper powder with an electron beam, solidifying the pure copper powder to form a second layer, and repeating the foregoing process to add layers. The pure copper powder is a pure copper powder with a Si coating formed thereon, and the preheating temperature is set to be 400° C. or higher and less than 800° C.

Abstract: Provided is a copper alloy powder which is a metal powder to be used for additive manufacturing by a laser beam system, and which is able to achieve a higher laser absorption rate and additionally suppress heat transfer through necking, and a method for producing this copper alloy powder. A copper alloy powder which contains one or more elements selected from among Cr, Zr and Nb in a total amount of 15 wt % or less, with a balance being made up of Cu and unavoidable impurities, and which is characterized in that a coating film containing Si atoms is formed on the copper alloy powder, and a Si concentration in the copper alloy powder with the coating film is 5 wt ppm or more and 700 wt ppm or less.