Abstract: Provided is an indium phosphide substrate, a semiconductor epitaxial wafer, and a method for producing an indium phosphide substrate, which can satisfactorily suppress warpage of the back surface of the substrate. The indium phosphide substrate includes a main surface for forming an epitaxial crystal layer and a back surface opposite to the main surface, wherein the back surface has a BOW value of ?2.0 to 2.0 ?m, as measured with the back surface of the indium phosphide substrate facing upward.

Abstract: Provided is a sputtering target, comprising: from 0.001 mol % to 0.5 mol % of Bi; from 45 mol % or less of Cr; 45 mol % or less of Pt; 60 mol % or less of Ru; and a total of 1 mol % to 35 mol % of at least one metal oxide, the balance being Co and inevitable impurities.

Abstract: A production method of an additive manufactured object is provided. The method is an EB-based additive manufacturing method of spreading a pure copper powder, preheating the pure copper powder and thereafter partially melting the pure copper powder by scanning the pure copper powder with an electron beam, solidifying the pure copper powder to form a first layer, newly spreading a pure copper powder on the first layer, preheating the pure copper powder and thereafter partially melting the pure copper powder by scanning the pure copper powder with an electron beam, solidifying the pure copper powder to form a second layer, and repeating the foregoing process to add layers. The pure copper powder is a pure copper powder with a Si coating formed thereon, and the preheating temperature is set to be 400° C. or higher and less than 800° C.

Abstract: Provided is a copper alloy powder which is a metal powder to be used for additive manufacturing by a laser beam system, and which is able to achieve a higher laser absorption rate and additionally suppress heat transfer through necking, and a method for producing this copper alloy powder. A copper alloy powder which contains one or more elements selected from among Cr, Zr and Nb in a total amount of 15 wt % or less, with a balance being made up of Cu and unavoidable impurities, and which is characterized in that a coating film containing Si atoms is formed on the copper alloy powder, and a Si concentration in the copper alloy powder with the coating film is 5 wt ppm or more and 700 wt ppm or less.

Abstract: A potassium sodium niobate sputtering target having a relative density of 95% or higher. A method of producing a potassium sodium niobate sputtering target, including the steps of mixing a Nb2O5 powder, a K2Co3 powder, and a Na2Co3 powder, pulverizing the mixed powder to achieve a grain size d50 of 100 ?m or less, and performing hot press sintering to the obtained pulverized powder in an inert gas or vacuum atmosphere under conditions of a temperature of 900° C. or higher and less than 1150° C., and a load of 150 to 400 kgf/cm2. The present invention aims to provide a high density potassium sodium niobate sputtering target capable of industrially depositing potassium sodium niobate films via the sputtering method.

Abstract: Provided a sputtering target and a method for manufacturing the sputtering target, in which a penetration of impurities into the target material during bonding is suppressed A sputtering target, wherein an intensity ratio (B/A) of a minimum reflection intensity B to a maximum reflection intensity A of a back surface wave of a target material as measured by a water immersion ultrasonic flaw detection inspection after bonding the target material is 0.70 or more, and wherein a water absorption rate of the target material determined by a relationship of a weight change rate (100×(a?b)/b) is 0.01% to 1.0%, where (a) is a weight after immersion as measured after immersing the target material in water for 10 hours and removing the water on a surface, and (b) is a dry weight of the target material before the immersion.

Abstract: An Sb—Te-based alloy sintered compact sputtering target having Sb and Te as main components and which contains 0.1 to 30 at % of carbon or boron and comprises a uniform mixed structure of Sb—Te-based alloy particles and fine carbon (C) or boron (B) particles is provided. An average grain size of the Sb—Te-based alloy particles is 3 ?m or less and a standard deviation thereof is less than 1.00. An average grain size of the C or B particles is 0.5 ?m or less and a standard deviation thereof is less than 0.20. When the average grain size of the Sb—Te-based alloy particles is X and the average grain size of the carbon or boron particles is Y, Y/X is within a range of 0.1 to 0.5. This provides an improved Sb—Te-based alloy sputtering target that inhibits generation of cracks in the sintered target and prevents generation of arcing during sputtering.

Abstract: Provided is a sputtering target or a film which is characterized by containing 0.1 to 10 mol % of an oxide of one or more types selected from FeO, Fe3O4, K2O, Na2O, PbO, and ZnO, 5 to 70 mol % of Pt, and the remainder being Fe. The present invention addresses the issue of providing a sputtering target capable of considerably reducing the particles caused by nonmagnetic materials and significantly improving the yield during deposition. It is thereby possible to deposit a quality magnetic recording layer and improve yield of a magnetic recording medium.

Abstract: Provided is a multi-shank heater to be mounted on a support substrate, wherein, with a normal direction relative to the support substrate, which is a direction from the heater side toward the support substrate side, as a basis, the multi-shank heater has U-shaped pieces in which an angle ? of a planar direction of the U-shaped pieces, which is a direction from the heater side toward the support substrate side, is ±10° or more and ±60° or less. An object of the present invention is to provide a multi-shank heater capable of considerably improving the energy output even when the U-shaped pieces are arranged in a high density and have the same pitch.

Abstract: Provided is a Ti—Nb alloy sputtering target containing 0.1 to 30 at % of Nb, the remainder of Ti and unavoidable impurities; and the Ti—Nb alloy sputtering target is characterized by having an oxygen content of 400 wtppm or less. Since the target in the present disclosure has a favorable surface texture with a low oxygen content and is readily processable due to the low hardness of the target, the Ti—Nb alloy sputtering target yields a superior effect of being able to suppress the generation of particles during sputtering.

Abstract: An object of the present invention is to provide an IGZO sputtering target capable of improving uniformity for at least one property selected from the number of microcracks in the structure, the number of pores in the sintered body structure, and surface roughness. The IGZO sputtering target according to the present invention has an oxide sintered body, the oxide sintered body comprising indium (In), gallium (Ga), zinc (Zn) and unavoidable impurities, wherein, on a surface of the oxide sintered body, a lightness difference ?L* satisfies ?L*<3.0, in which the ?L* is obtained by subtracting lightness Lc*at a central portion on the surface from lightness Le* at a position of 10 mm from an end portion to the central portion side on the surface, and wherein the oxide sintered body has a relative density of 97.0% or more.

Abstract: A Co sputtering target having a purity of 99.99% to 99.999% and a Si content of 1 wtppm or less. Provided is a Co sputtering target capable of improving barrier properties and adhesiveness by suppressing conversion into highly reactive silicide by a reduction in the Si content in cobalt.

Abstract: Provided is a sputtering target that can form a magnetic film having both good magnetic separation between magnetic grains and high coercive force at the same time; a magnetic film; and a method for producing a magnetic film. The sputtering target according to the present invention comprises: 1 at. % or more of Zn, a part or all of Zn forming a complex oxide(s) of Zn—Ti—O and/or Zn—Si—O; and 45 at. % or less of Pt, the balance being Co and inevitable impurities, the atomic percentage being based on an atomic ratio.

Abstract: Provided is a method for processing electronic and electrical device component scraps, which can selectively recover a substrate scrap including a substance intended to be recovered. A method for processing electronic and electrical device component scraps, including separating a substrate with lead wires contained in the electronic and electrical device component scraps before sorting the electronic and electrical device component scraps by magnetic sorting.

Abstract: Provided is an indium phosphide substrate, a semiconductor epitaxial wafer, and a method for producing an indium phosphide substrate, which can satisfactorily suppress warpage of the back surface of the substrate. The indium phosphide substrate includes a main surface for forming an epitaxial crystal layer and a back surface opposite to the main surface, wherein the back surface has a SORI value of 2.5 ?m or less, as measured with the back surface of the indium phosphide substrate facing upward.

Abstract: Provided is a stannous oxide powder that can be suitably used for supplying tin ions, and has improved solubility and at the same time has an improved handling property. A stannous oxide powder comprising stannous oxide and inevitable impurities, wherein a content of stannous oxide in a dry mass is 99.9% by mass or more; a specific surface area is from 0.1 to 1.0 m2/g; a TAP density is from 2 to 4 g/cm; a 50% particle diameter is from 30 to 60 ?m; and an angle of repose is from 10 to 33°.