Abstract: A physical property of a test sample with a conductive or semi-conductive material (line/area/volume) is obtained. Periodic Joule heating is induced within the test sample by passing an AC current across a first pair of probe terminals electrically connected to the test sample, measuring the voltage drop across a second pair of probe terminals electrically connected to the test sample at one and three times the fundamental excitation frequency of the current-conducting terminals, and calculating the temperature-modulated property/properties of the test sample as a function of the potential drop measurement(s). This includes: a) determining a value proportional to the TCR of the test sample, b) a geometric parameter of the test sample (affected by coupling of its TCR to heat transport to/from the test sample), or c) the true resistivity of the test sample at the ambient experimental temperature by subtracting measurable and accountable TCR offset(s).

Abstract: A dark-field optical system may include a rotational objective lens assembly with a dark-field objective lens to collect light from a sample within a collection numerical aperture, where the dark-field objective lens includes an entrance aperture and an exit aperture at symmetrically-opposed azimuth angles with respect to an optical axis, a rotational bearing to allow rotation of at least a part of the dark-field objective lens including the entrance aperture and the exit aperture around the optical axis, and a rotational driver to control a rotational angle of the entrance aperture. The system may also include a multi-angle illumination sub-system to illuminate the sample with an illumination beam through the entrance aperture at two or more illumination azimuth angles, where an azimuth angle of the illumination beam on the sample is selectable by rotating the objective lens to any of the two or more illumination azimuth angles.

Abstract: To calibrate a TDI photomask inspection tool, a photomask with a plurality of distinctly patterned regions is loaded into the tool. The plurality of distinctly patterned regions is successively illuminated with an EUV beam of light. While illuminating respective distinctly patterned regions, respective instances of imaging of the respective distinctly patterned regions are performed using a TDI sensor in the inspection tool. While performing the respective instances of imaging, a reference intensity detector is used to measure reference intensities of EUV light collected from the photomask. Based on the results of the respective instances of imaging and the measured reference intensities of EUV light, linearity of the TDI sensor is determined.

Abstract: A light attenuating device includes a housing, a first filter, a first motor configured to move the first filter, and a pneumatic actuator configured to move the first filter to either be in contact with the housing or to not be in contact with the housing. The filter includes multiple slit openings that vary in width such that the amount of light that passes through the multiple slit openings varies as the first filter is moved. The light attenuating device may also include a second filter and a second motor configured to move the second filter. A method of light attenuation is also disclosed that includes adjusting the position of a filter such that a portion of the filter is irradiated by a radiating beam, and while maintaining the irradiation of the portion of the filter, moving the filter to be in contact with a thermally conductive object.

Abstract: A product includes at least one semiconductor substrate, multiple thin-film layers disposed on the at least one substrate, and an overlay target formed in at least one of the thin-film layers. The overlay target includes a first sub-target having a first center of symmetry and including first target features having a first linewidth, and a second sub-target having a second center of symmetry coincident with the first center of symmetry and including second target features, which have a second linewidth, greater than the first linewidth, and are adjacent to but non-overlapping with the first target features.

Abstract: An apparatus, a method and a computer program product for defect detection in work pieces is disclosed. At least one light source is provided and the light source generates an illumination light of a wavelength range at which the work piece is transparent. A camera images the light from at least one face of the work piece on a detector of the camera by means of a lens. A stage is used for moving the work piece and for imaging the at least one face of the semiconductor device completely with the camera. The computer program product is disposed on a non-transitory, computer readable medium for defect detection in work pieces. A computer is used to execute the various process steps and to control the various means of the apparatus.

Abstract: A vacuum chuck is provided, comprising: a vacuum buffer in fluid communication with a vacuum source, the vacuum buffer being an enclosed volume in the vacuum chuck; a top plate, defining surface features on a first side, and an internal network of distribution channels open to the first side via through holes; and a flow valve configured to control fluid communication between the network of distribution channels and the vacuum buffer. By opening the flow valve, negative pressure is applied from between a substrate disposed on the first side of the top plate through the through holes into the vacuum buffer, thereby flattening the substrate against at least part of the first side of the top plate.

Abstract: Combined electron beam overlay and scatterometry overlay targets include first and second periodic structures with gratings. Gratings in the second periodic structure can be positioned under the gratings of the first periodic structure or can be positioned between the gratings of the first periodic structure. These overlay targets can be used in semiconductor manufacturing.

Abstract: Methods and systems for realizing a high radiance x-ray source based on a high density electron emitter array are presented herein. The high radiance x-ray source is suitable for high throughput x-ray metrology and inspection in a semiconductor fabrication environment. The high radiance X-ray source includes an array of electron emitters that generate a large electron current focused over a small anode area to generate high radiance X-ray illumination light. In some embodiments, electron current density across the surface of the electron emitter array is at least 0.01 Amperes/mm2, the electron current is focused onto an anode area with a dimension of maximum extent less than 100 micrometers, and the spacing between emitters is less than 5 micrometers. In another aspect, emitted electrons are accelerated from the array to the anode with a landing energy less than four times the energy of a desired X-ray emission line.

Abstract: A method for imaging overlay targets on a wafer includes (1) using a sensor to acquire images of overlay targets on a wafer while the wafer is in motion and (2) accelerating and decelerating the wafer to move the overlay targets into alignment with the sensor between acquiring images of the overlay targets. Accelerating/decelerating the wafer may include: (1) accelerating the wafer at a maximum acceleration and then decelerating the wafer at a maximum deceleration, (2) accelerating/decelerating the wafer in a triangular waveform pattern, (3) accelerating/decelerating the wafer in a sinusoidal pattern, or (4) accelerating/decelerating the wafer in a near-sinusoidal pattern (created by combining a pure sinusoidal profile with one or more harmonic profiles). A system is also provided for implementing the above method(s).

Abstract: An interferometric overlay tool may include an interferometer and a controller. The interferometer may include one or more beamsplitters to split illumination including one or more wavelengths into a probe beam along a probe path and a reference beam along a reference path, one or more illumination optics to illuminate a grating-over-grating structure with the probe beam, one or more collection optics to collect a measurement beam from the grating-over-grating structure, one or more beam combiners to combine the measurement beam and the reference beam as an interference beam, and a variable phase delay configured to vary an optical path difference (OPD) in the interferometer. The controller may receive one or more interference signals representative of interferometric phase data associated with a plurality of OPD values and the one or more wavelengths from a detector and determine an overlay error of the grating-over-grating structure based on the interferometric phase data.

Abstract: A material recovery system for an optical component includes a reservoir containing gas and configured to supply a gas flow containing the gas. The material recovery system also includes an ion beam generator disposed on the reservoir and configured to receive the gas flow and to ionize the gas in the gas flow to generate an ion beam. The ion beam is configured to be directed to the optical component to remove at least a portion of a F-containing optical material degraded by exposure to VUV radiation, DUV radiation, and/or photo-contamination.

Abstract: A light modulated electron source utilizes a photon-beam source to modulate the emission current of an electron beam emitted from a silicon-based field emitter. The field emitter's cathode includes a protrusion fabricated on a silicon substrate and having an emission tip covered by a coating layer. An extractor generates an electric field that attracts free electrons toward the emission tip for emission as part of the electron beam. The photon-beam source generates a photon beam including photons having an energy greater than the bandgap of silicon, and includes optics that direct the photon beam onto the emission tip, whereby each absorbed photon creates a photo-electron that combines with the free electrons to enhance the electron beam's emission current. A controller modulates the emission current by controlling the intensity of the photon beam applied to the emission tip. A monitor measures the electron beam and provides feedback to the controller.

Abstract: At least three dark field images of a feature on a semiconductor wafer can be formed using an optical inspection system. Each of the at least three dark field images is from a different channel of the optical inspection system using an aperture that is fully open during image generation. The dark field images can be fused into a pseudo wafer image that is aligned with a corresponding design. This alignment can improve care area placement.

Abstract: Methods and systems for detecting and classifying defects based on the phase of dark field scattering from a sample are described herein. In some embodiments, throughput is increased by detecting and classifying defects with the same optical system. In one aspect, a defect is classified based on the measured relative phase of scattered light collected from at least two spatially distinct locations in the collection pupil. The phase difference, if any, between the light transmitted through any two spatially distinct locations at the pupil plane is determined from the positions of the interference fringes in the imaging plane. The measured phase difference is indicative of the material composition of the measured sample. In another aspect, an inspection system includes a programmable pupil aperture device configured to sample the pupil at different, programmable locations in the collection pupil.

Abstract: A segmented detector device with backside illumination. The detector is able to collect and differentiate between secondary electrons and backscatter electrons. The detector includes a through-hole for passage of a primary electron beam. After hitting a sample, the reflected secondary and backscatter electrons are collected via a vertical structure having a P+/P?/N+ or an N+/N?/P+ composition for full depletion through the thickness of the device. The active area of the device is segmented using field isolation insulators located on the front side of the device.

Abstract: Methods and systems for performing overlay and edge placement errors based on Soft X-Ray (SXR) scatterometry measurement data are presented herein. Short wavelength SXR radiation focused over a small illumination spot size enables measurement of design rule targets or in-die active device structures. In some embodiments, SXR scatterometry measurements are performed with SXR radiation having energy in a range from 10 to 5,000 electronvolts. As a result, measurements at SXR wavelengths permit target design at process design rules that closely represents actual device overlay. In some embodiments, SXR scatterometry measurements of overlay and shape parameters are performed simultaneously from the same metrology target to enable accurate measurement of Edge Placement Errors. In another aspect, overlay of aperiodic device structures is estimated based on SXR measurements of design rule targets by calibrating the SXR measurements to reference measurements of the actual device target.

Abstract: A probe for direct nano- and micro-scale electrical characterization of materials and semi conductor wafers. The probe comprises a probe body, a first cantilever extending from the probe body, and a first thermal detector extending from the probe body. The thermal detector is used to position the cantilever with respect to a test sample.

Abstract: A laser-sustained plasma (LSP) light source with vortex gas flow is disclosed. The LSP source includes a gas containment structure for containing a gas, one or more gas inlets configured to flow gas into the gas containment structure, and one or more gas outlets configured to flow gas out of the gas containment structure. The one or more gas inlets and the one or more gas outlets are arranged to generate a vortex gas flow within the gas containment structure. The LSP source also includes a laser pump source configured to generate an optical pump to sustain a plasma in a region of the gas containment structure within an inner gas flow within the vortex gas flow. The LSP source includes a light collector element configured to collect at least a portion of broadband light emitted from the plasma.

Abstract: A process condition sensing apparatus is disclosed. The apparatus includes a substrate and an electronic enclosure including one or more electronic components. The apparatus includes a floating connection assembly configured to mechanically couple the electronic enclosure to the substrate, the floating connection assembly includes a leg and a foot. The leg or foot are arranged to mitigate thermal stress between one or more interfaces. The one or more interfaces include a leg-enclosure interface or a foot-substrate interface.