Abstract: A display includes first and second pixel devices. The first pixel device includes a first control circuit and a first light emitting circuit. The first control circuit generates a first light emitting signal according to a first clock signal and a data signal during a first period. The first light emitting circuit emits light according to the first light emitting signal during second and third periods. The second pixel device includes a second control circuit and a second light emitting circuit. The second control circuit generates a second light emitting signal according to a second clock signal and the data signal during the second period. The second light emitting circuit is coupled to the second control circuit and emits light according to the second light emitting signal during the third period. The first period to the third period are arranged continuously in order.

Abstract: A pixel array package structure includes: a substrate; a pixel array disposed on the substrate, in which the pixel array includes a plurality of light emitting diode chips, and the light emitting diode chips include at least one red diode chip, at least one green diode chip, at least one blue diode chip, and a combination thereof; a reflective layer disposed on the substrate and between any two adjacent of the light emitting diode chips; a light-absorbing layer disposed on the reflective layer and surrounding the pixel array; and a light-transmitting layer disposed on the pixel array, the reflective layer, and the light-absorbing layer, in which the light-transmitting layer has an upper surface and a lower surface opposite thereto, and the lower surface is in contact with the pixel array, and the upper surface has a roughness of 0.005 mm to 0.1 mm.

Abstract: A sterilization device includes a sterilizing light source and an outer housing configured to accommodate and secure the sterilizing light source and shield light emitted by the sterilizing light source. The outer housing has a foldable structure to be selectively in an unfolded state or a folded state, wherein the outer housing in the unfolded state occupies a larger volume than that occupied by the outer housing in the folded state.

Abstract: A light-emitting device includes a panel substrate, a light-emitting chip, and a light extracting layer. The light-emitting chip is disposed on the panel substrate. The light extracting layer covers the light-emitting chip and the panel substrate, and the light extracting layer has a side portion. Taking the position where the edge of the light-emitting chip is in contact with the panel substrate as the origin, the side portion and the origin define a circle tangential to the surface of the side portion. The circle has a radius c which satisfies the following formula (1): 1 40 ? H ? c ? H ( 1 ) where H is a height of the light-emitting chip. The light-emitting device disclosed herein has a light extracting layer having a very small thickness, and provides excellent light-emitting efficiency and lifetime of the light-emitting device.

Abstract: A picking apparatus is configured to pick up a plurality of micro elements. The picking apparatus includes a main body and a plurality of picking portions. The picking portions connect with and protrude from the main body. Each of the picking portions has a first surface. The first surfaces are away from the main body and configured to pick up the micro elements. The main body has a second surface at least partially located between the picking portions. Each of the first surfaces has a first viscosity. The second surface has a second viscosity. The second viscosity is less than the first viscosity.

Abstract: A wavelength converting material includes a luminous core and a first protective layer. The first protective layer covers the luminous core, in which the first protective layer includes silicon dioxide, and in silicon atoms of the silicon dioxide, the silicon atom of the zeroth configuration (Q0) does not connect with any siloxy group, and the silicon atom of the first configuration (Q1) connects with one siloxy group, and the silicon atom of the second configuration (Q2) connects with two siloxy groups, and the silicon atom of the third configuration (Q3) connects with three siloxy groups, and the silicon atom of the fourth configuration (Q4) connects with four siloxy groups, in which a total amount of the silicon atoms of the third configuration and the fourth configuration is greater than a total amount of the silicon atoms of the zeroth configuration, the first configuration and the second configuration.

Abstract: An optical element includes a bottom surface, a total reflection surface above the bottom surface, a recess recessed from the bottom surface toward the total reflection surface and first and second light exit surfaces. The optical element has a central axis perpendicular to the bottom surface. The total reflection surface has a peripheral boundary away from the central axis. The first light exit surface is connected to the peripheral boundary of the total reflection surface and extends toward the bottom surface away from the central axis. The second light exit surface is connected to the first light exit surface, extends away from the central axis, and is connected to the bottom surface. Each of the first and second light exit surfaces is consisted of at least one linear sub-refractive surface. Each linear sub-refractive surface is a straight line in any cross section passing through the central axis.

Abstract: A light-emitting package structure includes a light transmissive adhesive layer, a substrate, and at least one light-emitting diode chip. The light transmissive adhesive layer includes a first surface and a second surface facing away from the first surface. The substrate is on the first surface of the light transmissive adhesive layer. The light-emitting diode chip is on the second surface of the light transmissive adhesive layer. The light transmissive adhesive layer has a first portion and a second portion on the second surface, the first portion surrounds the second portion, a vertical projection area of the second portion on the substrate at least entirely covers a vertical projection area of the light-emitting diode chip on the substrate, and a thickness of the second portion is smaller than or equal to a thickness of the first portion.

Abstract: The light emitting diode packaging structure includes a flexible substrate, a first adhesive layer, a micro light emitting element, a conductive pad, a redistribution layer, and an electrode pad. The first adhesive layer is disposed on the flexible substrate. The micro light emitting element is disposed on the first adhesive layer. The micro light emitting element has a first surface facing to the first adhesive layer and a second surface opposite to the first surface. The conductive pad is disposed on the second surface of the micro light emitting element. The redistribution layer covers the micro light emitting element and the conductive pad. The electrode pad is disposed on the redistribution layer and is electrically connected to the circuit layer. A total thickness of the flexible substrate, the first adhesive layer, the redistribution layer, and the electrode pad is less than 200 um.

Abstract: A low blue light backlight module configured to emit a white light is provided. The low blue light backlight module includes a first light-emitting element, a second light-emitting element, a third light-emitting element and a fourth light-emitting element. The first light-emitting element is configured to emit a first light having a peak emission wavelength of about 610-660 nm. The second light-emitting element is configured to emit a second light having a peak emission wavelength of about 520-550 nm. The third light-emitting element is configured to emit a third light having a peak emission wavelength of about 480-580 nm. The fourth light-emitting element is configured to emit a fourth light having a peak emission wavelength of about 445-470 nm. The white light has an emission spectrum, and an area ratio of the spectrum under wavelength of 415-455 nm to the spectrum under wavelength of 400-500 nm is below 50%.

Abstract: A light emitting diode includes a first type semiconductor layer, an active layer, a second type semiconductor layer, a patterned electrode layer, a flat layer and a reflective layer. The active layer is disposed on the first type semiconductor layer. The second type semiconductor layer is disposed on the active layer. The second type semiconductor layer includes a first surface and a second surface having a first arithmetic mean roughness. The patterned electrode layer is disposed on the second surface of the second type semiconductor layer. The planarization layer is disposed on the second type semiconductor layer. The planarization layer includes a third surface and a fourth surface. The third surface is in contact with the second surface of the second type semiconductor layer. The fourth surface has a second arithmetic mean roughness that is less than the first arithmetic mean roughness.

Abstract: A light emitting device includes an edge emitting laser chip and a reflecting mirror. The edge emitting laser chip has light emitting ports arranged in parallel in a first direction. The light emitting ports emit light beams in a second direction. The reflecting mirror includes a reflecting surface used to reflect the light beams to a third direction. The first, second and third direction are perpendicular to each other. The light beams are emitted to the reflecting surface through the virtual incident plane and project first light spots on the reflecting surface. Each projected light spot has a first axis length in the first direction and a third axis length in the third direction. An interval between two immediately-adjacent light emitting ports is greater than the first axis length of one of the two projected light spots aligned with the two immediately-adjacent light emitting ports.

Abstract: A wavelength converting material includes a luminous core and a first protective layer. The first protective layer covers the luminous core, and the first protective layer includes aluminum silicate. The aluminum silicate includes a plurality of silicon atoms, each of the silicon atoms is one of a zeroth configuration Q4(0Al), first configuration Q4(1Al), second configuration Q4(2Al), third configuration Q4(3Al), and fourth configuration Q4(4Al). The silicon atoms of the zeroth configuration do not connect with aluminum oxide group, and the silicon atoms of the first, second, third, and fourth configurations respectively connect with one, two, three, and four aluminum oxide group(s). A total number of the silicon atoms of the third configuration and the fourth configuration is larger than a total number of the silicon atoms of the zeroth configuration, the first configuration, and the second configuration.

Abstract: A light emitting diode structure includes a semiconductor stack and a supporting breakpoint. The semiconductor stack includes a first semiconductor layer, a light emitting layer, and a second semiconductor layer. The first semiconductor layer has a light emitting surface exposed outside and the light emitting surface has a rough texture. The light emitting layer is disposed on the first semiconductor layer. The second semiconductor layer is disposed on the light emitting layer, and the second semiconductor layer has a type that is different from the first semiconductor layer. The supporting breakpoint is on the light emitting surface. The light emitting diode structure can be applied in wide color gamut (WCG) backlight module or ultra-thin backlight module.

Abstract: The present disclosure relates to a pixel circuit including a light emitting unit, a processing circuit and a driving circuit. The processing circuit is configured to receive a frame display signal, and is configured to calculate the frame display signal to generate a driving duty cycle corresponding to a driving period according to a driving current value. The driving circuit is electrically connected to the processing circuit and the light emitting unit, and is configured to drive the light emitting unit during the driving period according to the driving duty cycle, the driving current value and a driving frequency.

Abstract: A package structure of a light-emitting element includes a shell, a first conductive path, a second conductive path, a light-emitting device, a cover, a first light-transmitting sensing electrode, and a second light-transmitting sensing electrode. The shell has a top surface and a bottom surface, and the top surface is recessed toward the bottom surface to form an accommodating space. Each of the first and second conductive paths extends from the top surface to the bottom surface. The light-emitting device is disposed in the accommodating space. The cover is disposed over the shell. The first and second light-transmitting sensing electrodes are disposed on the same surface of the cover, and a capacitance is formed between the first and second light-transmitting sensing electrodes. The first and second light-transmitting sensing electrodes are electrically connected to the first and second conductive paths, respectively.

Abstract: A light emitting diode (LED) package includes a substrate, at least one micro LED chip, a black material layer, and a transparent material layer. The substrate has a width ranging from 100 micrometers to 1000 micrometers. The at least one micro LED chip is electrically mounted on a top surface of the substrate and has a width ranging from 1 micrometer to 100 micrometers. The black material layer covers the top surface of the substrate to expose the at least one micro LED chip. The transparent material layer covers the at least one micro LED chip and the black material layer.

Abstract: A pixel structure includes a light emitting diode chip and a light blocking structure. The light emitting diode chip includes a P-type semiconductor layer, an active layer, an N-type semiconductor layer, a first electrode, and K second electrodes. The active layer is located on the P-type semiconductor layer. The N-type semiconductor layer is located on the active layer. The N-type semiconductor layer has a first top surface that is distant from the active layer. The first electrode is electrically connected to the P-type semiconductor layer. The light blocking structure is located in the light emitting diode chip and defines K sub-pixel regions. The active layer and the N-type semiconductor layer are divided into K sub-portions respectively corresponding to the K sub-pixel regions by the light blocking structure. The K sub-pixel regions share the P-type semiconductor layer.

Abstract: A white light emitting device includes a blue LED chip having a dominant emission wavelength of about 440-465 nm, and a phosphor layer configured to be excited by the dominant emission wavelength of the blue LED chip. The phosphor layer includes a first phosphor having a peak emission wavelength of about 480-519 nm, a second phosphor having a peak emission wavelength of about 520-560 nm, and a third phosphor having a peak emission wavelength of about 620-670 nm. The first phosphor and the second phosphor both have a garnet structure as represented by A3B5O12:Ce, A is selected from the group consisting of Y, Lu, and a combination of thereof, and B is selected from the group consisting of Al, Ga, and a combination of thereof.

Abstract: A nitride phosphor, and a light emitting device and a backlight module employing the nitride phosphor. The nitride phosphor has the formula (Sr1-x, Bax)LiAl3N4-nOn:Eu3+y, Eu2+z with 0<x<1 and y/z>0.1. The light emitting device includes a light emitting diode configured to emit a first light and the nitride phosphor configured to convert a portion of the first light to a second light. A backlight module includes a printed circuit board and a plurality of the light emitting devices.