Abstract: A light emitting device includes a stacked structure and a first insulating layer covering at least side surfaces of the stacked structure including a p-type and n-type semiconductor layers, a light emitting layer sandwiched between the p-type and n-type semiconductor layers, an n-type electrode on the n-type semiconductor layer, an n-type contact layer sandwiched between the n-type semiconductor layer and the n-type electrode, a p-type electrode on the p-type semiconductor layer, an n-type contact pad on the n-type electrode, a p-type contact pad on the p-type electrode, and a semiconductor reflector between the light emitting layer and the n-type contact layer including multiple periods, each period including at least a first layer and at least a second layer having a refractive index different from a refractive index of the first layer. The light emitting device could be applied to wide color gamut (WCG) backlight modules or ultra-thin backlight modules.

Abstract: A light emitting diode includes a base layer, an electric contact layer, a semiconductor stack, and an insulation layer. The base layer has a maximum of a first width. The electric contact layer has a maximum of a second width and is disposed on the base layer. The semiconductor stack disposed on the electric contact layer has a maximum of a third width, and includes a first type semiconductor layer, a light emitting layer, and a second type semiconductor layer stacked in sequence, wherein a width of the first type semiconductor layer is smaller than the maximum of the third width. The insulation layer covers the sidewalls of the base layer, the electric contact layer, and the semiconductor stack. The maximum of the second width is greater than the maximum of the third width and the maximum of the second width is less than the maximum of the first width.

Abstract: A light-emitting module structure includes a substrate, a plurality of light-emitting diodes (LEDs) disposed on the substrate, and a light-guiding layer covering the light-emitting diodes. The light-guiding layer has an upper surface, the upper surface has a plurality of recesses, and the recesses are above the light-emitting diodes or between the light-emitting diodes. This light-emitting module structure can improve the brightness and uniformity of the light-emitting module.

Abstract: A quantum dot composite material and a manufacturing method and an application thereof are provided. The quantum dot composite material includes an all-inorganic perovskite quantum dot and a modification protection on a surface of the all-inorganic perovskite quantum dot. The all-inorganic perovskite quantum dot has a chemical formula of CsPb(ClaBr1-a-bIb)3, wherein 0?a?1, 0?b?1.

Abstract: A display device includes a substrate, a light-emitting member, and an anti-reflective glass layer. The light-emitting member is on the substrate. The anti-reflective glass layer is over the light-emitting member, and the anti-reflective glass layer has a transmittance of 40-95%. The anti-reflective glass layer includes a glass layer and a light-absorbing layer. The glass layer has a rough top surface and a haze of 70-80%. The light-absorbing layer is on the rough top surface of glass layer.

Abstract: A LED carrier includes a substrate, a conductive layer, an adhesive layer, and a reflector. The conductive layer is disposed on the substrate, and has a bonding portion and an extending portion. The bonding portion has a top surface higher than a top surface of the extending portion. The adhesive layer covers the extending portion of the conductive layer and exposes the bonding portion of the conductive layer. The reflector is disposed over the adhesive layer. The adhesive layer has a hook portion in contact with a corner of the reflector.

Abstract: An infrared emitting fluoride phosphor and an infrared light emitting device are provided. The infrared emitting fluoride phosphor includes an activation center of Cr3+. The infrared light emitting device includes a light source and the infrared emitting fluoride phosphor. The light source is disposed to emit a first light, and the first light has a wavelength of 400-700 nm. The infrared emitting fluoride phosphor is configured to be excited by the first light to emit a first infrared ray. The first infrared ray has a wavelength of 650-1000 nm. The infrared light emitting device has a broad emission wavelength, such that it can be applied in variety of sensing device.

Abstract: A perovskite luminescent nanocrystal has a chemical formula represented by: Cs4BX6, wherein B includes one or more selected from the group consisting of Ge, Pb, Sn, Sb, Bi, Cu, and Mn, and X includes one or more selected from the group consisting of Cl, Br, and I, wherein the Cs4BX6 perovskite luminescent nanocrystal has a pure phase, and a molar ratio of Cs to B (Cs/B) in the Cs4BX6 perovskite luminescent nanocrystal is greater than 1 and less than 4.

Abstract: A light-emitting diode package includes a substrate, at least one light-emitting chip, a light-reflective layer and a wave-length conversion fluorescent layer. The light-emitting chip is located on the substrate. The light-reflective layer is arranged around the light-emitting chip. The wave-length conversion fluorescent layer is located over the light-emitting chip, wherein the light-reflective layer is spaced from the fluorescent wave-length conversion layer by a groove that reaches two opposite sides of the light-emitting diode package.

Abstract: A filter circuit comprises a resistor-capacitor (RC) circuit, a comparator circuit, and an output control circuit. The RC circuit is configured to generate a ripple voltage according to the PWM signal. The comparator circuit couples with the RC circuit, and is configured to compare the ripple voltage with a first reference voltage, and output a switch signal according to a comparison result. The output control circuit couples with the comparator circuit and the RC circuit, and is configured to generate an output signal according to the switch signal and the PWM signal. When a duty ratio of the PWM signal is larger than a predetermined threshold value, the output signal is corresponding to the PWM signal. When the duty ratio of the PWM signal is smaller than the predetermined threshold value, the output signal is not corresponding to the PWM signal.

Abstract: A light emitting diode device includes a light emitting diode chip, a wavelength conversion layer including a bottom surface facing a top surface of the light emitting diode chip, and an interlayer having a first portion between the light emitting diode chip and a part of the bottom surface of the wavelength conversion layer, and a second portion extending from the first portion and connected between a remaining part of the bottom surface of the wavelength conversion layer and a side surface of the light emitting diode chip. The second portion has a side surface including a linear surface substantially aligning with a side surface of the wavelength conversion layer, and a curved surface having a first end connected to the linear surface and a second end connected to the side surface of the light emitting diode chip. The linear surface and the curved surface define a chamfer angle.

Abstract: A light-emitting diode (LED) device and a manufacturing method thereof are provided. The LED device includes a frame body, a first conductive extension structure, a second conductive extension structure, and a LED chip. The frame body includes an upper surface, a bottom, a recess on the opposite side of the bottom, and a first side surface and a second side surface opposite to each other. The first and second conductive extension structures are located in the frame body. The first and second conductive extension structures extend from the first side surface to the second side surface of the frame body. The frame body encapsulates a left side surface, a right side surface, a top surface, and a bottom surface of each of the first and second conductive extension structures. The LED chip is disposed in the recess and includes a first conductive pad and a second conductive pad.

Abstract: A light emitting diode structure includes a first type semiconductor layer, a second type semiconductor layer, an active layer disposed therebetween, and a reflective stacked layer. The reflective stacked layer includes a first reflective layer and a second reflective layer. The first reflective layer is disposed at a side of the second type semiconductor layer opposing the active layer. The second reflective layer is disposed at a side of the first reflective layer opposing the second type semiconductor layer, and extends along a side surface of the first reflective layer to a surface of the second type semiconductor layer. A vertical projection area of the second reflective layer on the second-type semiconductor layer is greater than that of the first reflective layer thereon. The second reflective layer has a better resistance to migration than the first reflective layer.

Abstract: A display device includes a driving substrate, multiple light-emitting elements, first and second transparent substrates, multiple pixels, and a patterned light-absorbing layer. The light-emitting elements are disposed on the driving substrate and used to emit a light. The first transparent substrate is disposed over the driving substrate and the light-emitting elements and includes at least one groove. The pixels are disposed in the groove and include a first sub-pixel, a second sub-pixel, and a third sub-pixel respectively aligned with one of the light-emitting elements. The second transparent substrate covers the first transparent substrate and the pixels. The patterned light-absorbing layer is disposed on the second transparent substrate and includes multiple first openings respectively aligned with the first, second, and third sub-pixels.

Abstract: A light emitting device includes a circuit board, light-emitting diodes, an optically clear adhesive layer and a transparent film. The light-emitting diodes are disposed on a surface of the circuit board. The optically clear adhesive layer is disposed on the surface of the circuit board and covers the light-emitting diodes. The transparent film is disposed over a side of the optically clear adhesive layer distant from the circuit board. A hardness of the transparent film is greater than a hardness of the optically clear adhesive layer.

Abstract: A light-emitting diode (LED) chip includes a substrate, a conductive layer, a first insulator layer, a light-emitting component, and an ESD protection component. The conductive layer is disposed on the substrate. The first insulator layer is disposed on the conductive layer and has a first opening and a second opening. The light-emitting component is disposed on the first insulator layer and includes a first semiconductor layer, a first quantum well layer, and a second semiconductor layer. The ESD protection component is disposed on the first insulator layer and separated from the light-emitting component. The ESD protection component includes a third semiconductor layer, a second quantum well layer, and a fourth semiconductor layer. The second quantum well layer is disposed between the third and fourth semiconductor layers. The first and fourth semiconductor layers are electrically isolated from each other before packaging the LED chip.

Abstract: A wavelength-converting film and a light emitting device and a display device using the same are disclosed. The wavelength converting film comprises a fluoride phosphor powder with a Mn4+ as an activator, wherein the fluoride phosphor powder with the Mn4+ as the activator comprises a sheet-like crystal and has a chemical formula of A2[MF6]:Mn4+, wherein A is Li, Na, K, Rb, Cs, NH4, or a combination thereof, and M is Ge, Si, Sn, Ti, Zr, or a combination thereof.

Abstract: A frame includes first and second leads and a body. The first and second leads contain a metal material. The body contains a non-metal material and has first and second side surfaces. The first and second leads are covered with the body. The first and second leads extend in a first direction to outwardly protrude from the body. The first and second side surfaces are respectively abutted against two ends of the protruding first lead and respectively slanted to the two ends of the protruding first lead by a first angle ?1 and a second angle ?2, which are defined by the following relationship, ?1?0° and the ?1?180°, and the ?2?0° and the ?2?180°. The substance between any two points in each of the first and second side surfaces is non-metal.

Abstract: A quantum dot composite material and a manufacturing method and an application thereof are provided. The quantum dot composite material includes an all-inorganic perovskite quantum dot and a modification protection on a surface of the all-inorganic perovskite quantum dot. The all-inorganic perovskite quantum dot has a chemical formula of CsPb(ClaBr1-a-bIb)3, wherein 0?a?1, 0?b?1.