Abstract: Embodiments of the invention include an infrared-emitting phosphor comprising (La,Gd)3Ga5?x?yAlxSiO14:Cry, where 0?x?1 and 0.02?y?0.08. In some embodiments, the infrared-emitting phosphor is a calcium gallogermanate material. In some embodiments, the infrared-emitting phosphor is used with a second infrared-emitting phosphor. The second infrared-emitting phosphor is one or more chromium doped garnets of composition Gd3?x1Sc2?x2?yLux1+x2Ga3O12:Cry, where 0.02?x1?0.25, 0.05?x2?0.3 and 0.04?y?0.12.

Abstract: A flexible three dimensional display assembly is provided. The flexible display assembly includes electrically interconnected light emitting elements, a flexible lattice fixture and a display bezel. The light emitting elements are electrically interconnected by a system of conductors. The light emitting elements are coupled to the flexible lattice fixture by an arrangement of structurally interconnected framing cells that receive pairs of the light emitting elements. The flexible lattice fixture is secured to the substrate of the display bezel such that the pairs of light emitting elements are maintained in optical alignment with corresponding pairs of apertures of the display bezel.

Abstract: Provided is a monolithically integrated red green blue (RGB) light emitting diode (LED) array manufactured with a reduced number of mesa etching steps and contact terminals. The LED array may have two or three p-n-junctions grown sequentially on a wafer. One of the p-n junctions has the opposite order of deposition of the n- and p-layers. A light-emitting active region is embedded between the n- and p-layers of each of the p-n junctions. Each active region emits light of different wavelength. The wafer is etched into multi-level mesas, creating two separate voltage terminals and a ground contact to control the bias between particular semiconductor layers. All of the p-n junctions share a common ground contact.

Abstract: Provided is an LED comprised of a first and a second p-n junction deposited sequentially on the same wafer. The first and second junctions have opposite orders of deposition of the n- and p-layers. One light-emitting active region is embedded between the n- and p-layers of the first junction and another light-emitting active region is embedded between the n- and p-layers of the second junction. Contacts are processed such that forward current can be passed in parallel through both of the junctions using a single voltage source. For a given forward current, the LED operates at lower voltage with higher optical flux and efficiency.

Abstract: Provided is a monolithically integrated red green blue (RGB) light emitting diode (LED) array manufactured with a reduced number of mesa etching steps and contact terminals. The LED array may have two or three p-n-junctions grown sequentially on a wafer. One of the p-n junctions has the opposite order of deposition of the n- and p-layers. A light-emitting active region is embedded between the n- and p-layers of each of the p-n junctions. Each active region emits light of different wavelength. The wafer is etched into multi-level mesas, creating two separate voltage terminals and a ground contact to control the bias between particular semiconductor layers. All of the p-n junctions share a common ground contact.

Abstract: Provided is an LED comprised of a first and a second p-n junction deposited sequentially on the same wafer. The first and second junctions have opposite orders of deposition of the n- and p-layers. One light-emitting active region is embedded between the n- and p-layers of the first junction and another light-emitting active region is embedded between the n- and p-layers of the second junction. Contacts are processed such that forward current can be passed in parallel through both of the junctions using a single voltage source. For a given forward current, the LED operates at lower voltage with higher optical flux and efficiency.

Abstract: Systems, devices, and methods are disclosed in which one or more light sources, a detector, a processor and a controller are configured such that light from the one or more light sources improves the ability of a human or automated motor vehicle driver to identify and avoid pedestrians. The one or more light sources may provide spot illumination to moving objects or pedestrians on a road surface, with the spot illumination following the moving object or pedestrians along the portion of the road surface. The one or more light sources may project images on the ground or on other surfaces. The light source may be carried by a pedestrian or on personal transport used by a pedestrian. The light sources may be stationary and provide lighting for a pedestrian street crossing.

Abstract: A LED lighting system includes a power supply, a LED controller, and a light guide plate having a top, a bottom, and an edge. A printed circuit board connected to the power supply is positioned at least partially under the bottom of the light guide plate. At least one surface-emitting LED is positioned on the printed circuit board adjacent to the light guide plate and directed to emit light vertically. A partially transmissive reflector is attached to extend between the top of the edge of the light guide plate and the printed circuit board to direct vertically emitted light from the at least one surface-emitting LED into the edge of the light guide plate.

Abstract: Display devices comprise an optionally transparent display area that extends to one or more physical boundaries (edges) of the device. The display area may be located on a front surface of the display device, and the physical boundaries of the device to which the display area extends may be formed by physical sides of the device that intersect with the front surface to define part of a perimeter of the front surface. The display area may comprise a microLED array that extends with the display area to edges of the device. Power and/or control electronics for the display device may be located adjacent the display area but away from the edges of the display device to which the display area extends. Two or more such display devices can be arranged (i.e., tiled) with their display areas adjacent, in contact, and facing the same direction to form an extended continuous microLED display area spanning the display areas of the two or more display devices.

Abstract: Described are light emitting diode (LED) devices comprising a plurality of mesas defining pixels, each of the mesas comprising semiconductor layers, an N-contact material in a space between each of the plurality of mesas, a dielectric material which insulates sidewalls of the P-type layer and the active region from the metal. A multilayer composite film is on the P-type layer, the multilayer composite film comprising: a current spreading layer on the P-type layer, the current spreading layer having a first portion and a second portion; a dielectric layer on the second portion of the current spreading layer; a via opening defined by sidewalls in the dielectric layer and the first portion of the current spreading layer; and a P-contact layer in the via opening on the first portion of the current spreading layer, the sidewalls in the dielectric layer, and on at least a portion of the dielectric layer.

Abstract: A distance measurement system includes two or more line pattern generators (LPGs), a camera, and a processor. Each LPG emits a line pattern having a first set of dark portions separated by a respective first set of bright portions. A first line pattern has a first angular distance between adjacent bright portions, and a second line pattern has a second angular distance between adjacent bright portions. The camera captures at least one image of the first line pattern and the second line pattern. The camera is a first distance from the first LPG and a second distance from the second LPG. The processor identifies a target object illuminated by the first and second line patterns and determines a distance to the target object based on the appearance of the target object as illuminated by the first and second line patterns.

Abstract: A method of forming a nitridophosphate is disclosed, the method including forming a precursor mixture by combining a metal source material, a phosphorus source material, and a nitrogen source material, and heating the precursor mixture at a maximum temperature between 800° C. and 1300° C. in an atmosphere including nitrogen gas at a pressure between 2 MPa and 500 MPa.

Abstract: A light emitting device includes four primary light sources, the first light source emits light with an emission spectrum having a first peak in a wavelength in a range of 420-440 nm and a second peak in a wavelength range of 530-580 nm, the second light source emits light with an emission spectrum having a peak in a wavelength in a range of 470-500 nm, the third light source emits light with an emission spectrum having a peak in a wavelength range of 530-580 nm, and the fourth light source emits light with an emission spectrum having a peak in a wavelength range of 580-660 nm.

Abstract: A light spreading lens, an automotive lighting system, and method of manufacturing a light spreading lens are described. The light spreading lens includes an outer surface. The outer surface is defined by a Boolean intersection of a first cylindrical lens overlaid with a second cylindrical lens. The first cylindrical lens is configured to distribute light along a first axis. The second cylindrical lens is configured to distribute light along a second axis.

Abstract: A light emitting device having first, second and third dimensions that are orthogonal may include a light emitting semiconductor device configured to emit light via a first surface in a plane formed by the first and second dimensions. The light emitting device may further include a wavelength converting structure disposed on the first surface of the light emitting semiconductor device, the wavelength converting structure extending beyond the light emitting semiconductor device in the first dimension and the light emitting semiconductor device extending beyond the wavelength converting structure in the second dimension. The light emitting device may further include one or more optical extraction features in at least one gap formed by the wavelength converting structure extending beyond the light emitting semiconductor structure in the first dimension and/or formed by the light emitting semiconductor structure extending beyond the wavelength converting structure in the second dimension.

Abstract: A lighting device (1) is provided comprising a support structure (13, 13?), the support structure (13, 13?) comprising a first layer (13a, 13a?) comprising metal and a second layer (13b, 13b?) comprising metal; a central mounting face (18c) formed by a portion of the first layer (13a, 13a?) and by a portion of the second layer (13b, 13b?); and at least one lateral mounting face (18a, 18b) formed by a portion of one of the first layer (13a, 13a?) and the second layer (13b, 13b?); the lighting device (1) further comprising: at least one first light emitting element (11.1, 11.2, 11.3, 11.4, 11.5) arranged on the central mounting face (18c) in contact with the first layer (13a, 13a?) and in contact with the second layer (13b, 13b?); at least one second light emitting element (12a.1, 12a.2, 12a.3, 12a.4, 12a.5, 12b.

Abstract: Tunable LED lighting systems, devices and methods are described herein. A light emitting device includes at least a first phosphor-converted LED configured to emit light having a desaturated orange color point characterized by CIE 1976 color coordinates 0.3<u?<0.35 and v?>0.52 and at least a second phosphor-converted LED configured to emit light having a cyan color point characterized by CIE 1976 color coordinates 0.15<u?<0.20 and 0.47<v?<0.52. The first phosphor-converted LED and the second phosphor-converted LED are arranged to combine the light emitted by the first phosphor-converted LED with the light emitted by the second phosphor-converted LED to provide a white light output from the light emitting device.

Abstract: The invention describes a light emitting diode array module (30) comprising a plurality of light emitting diode structures (10a, 10b), wherein the light emitting diode structures (10a,10b) are arranged such that there is an optical cross talk between the light emitting diode structures (10a, 10b) during operation of the light emitting diode array module (30), wherein at least a first light emitting diode structure (10a) of the plurality of light emitting diode structures (10a, 10b) is characterized by a first color, and wherein at least a second light emitting diode structure (10b) of the plurality of light emitting diode structures (10a, 10b) is characterized by a second color different than the first color, wherein the first color, the second color and the optical cross talk between the light emitting diodes are arranged to provide a predefined light distribution in a reference plane (40) perpendicular to an optical axis (50) of the light emitting diode an-ay module (30).

Abstract: A device may include a wavelength converting layer on an epitaxial layer. The wavelength converting layer may include a first surface having a width that is equal to a width of the epitaxial layer, a second surface having a width that is less than the width of the first surface, and angled sidewalls. A conformal non-emission layer may be formed on the angled sidewalls and sidewalls of the epitaxial layer, such that the second surface of the wavelength converting layer is exposed.

Abstract: A LED assembly includes a baseplate and a diffuser. A circuit board connected to the baseplate has a first set of LEDs directed to emit light toward the diffuser. Additionally, a frame is attached to the baseplate and positioned to surround the circuit board. A flexible circuit with a second set of LEDs is attached to the frame, with the LEDs positioned to emit light predominantly perpendicular with respect to the first set of LEDs.