Abstract: A memory array comprises vertically-alternating tiers of insulative material and memory cells, with the memory cells individually comprising a transistor comprising first and second source/drain regions having a channel region there-between and a gate operatively proximate the channel region. At least a portion of the channel region is horizontally-oriented for horizontal current flow in the portion between the first and second source/drain regions. A capacitor of the memory cell comprises first and second electrodes having a capacitor insulator there-between. The first electrode is electrically coupled to the first source/drain region. A horizontal longitudinally-elongated sense line is in individual of the memory-cell tiers. Individual of the second source/drain regions of individual of the transistors that are in the same memory-cell tier are electrically coupled to the horizontal longitudinally-elongated sense line in that individual tier of memory cells.

Abstract: A method of forming a microelectronic device comprises forming a stack structure comprising a vertically alternating sequence of insulative structures and additional insulative structures, at least some of the additional insulative structures comprising silicon nitride having a ratio of nitrogen atoms to silicon atoms greater than about 1.58:1.00, forming openings through the stack structure, and forming cell pillar structures within the openings, the cell pillar structures individually comprising a semiconductor channel material vertically extending through the stack structure. Related methods, microelectronic devices, memory devices, and electronic systems are also described.

Abstract: This disclosure relates generally to interfaces between memory modules and circuit boards. More specifically, this disclosure relates to interfaces for coupling a memory module to a circuit board such that the memory module is arranged in a plane that is substantially parallel with a plane of the circuit board. Various embodiments disclosed herein include interfaces, memory modules including interfaces or portions of interfaces, and/or circuit boards including interfaces and/or portions of interfaces. Associated devices and systems are also disclosed.

Abstract: Implementations described herein relate to various structures, integrated assemblies, and memory devices. In some implementations, an integrated assembly includes a pillar having an upper source/drain, a middle source/drain, a lower source/drain, an upper channel between the upper source/drain and the middle source/drain, and a lower channel between the middle source/drain and the lower source/drain. The integrated assembly includes a gate pair that includes a first gate and a second gate. The first gate is positioned on a first side of the pillar at a first height, and the second gate is positioned on a second side of the pillar, that is opposite the first side, at a second height that is different from the first height. The integrated assembly includes a capacitor that is electrically coupled with the upper source/drain. Some implementations include methods of forming the various structures, integrated assemblies, and memory devices.

Abstract: An apparatus includes a voltage regulator coupled with a first voltage source, which supplies core memory circuitry. A first transistor is coupled between an output of the voltage regulator and input/output (I/O) circuitry. A second transistor is coupled between a second voltage source and the I/O circuitry, the second voltage source to power a set of I/O buffers. Control logic coupled with gates of the first and second transistors is to perform operations including: causing the second transistor to be activated to permit current to flow from the second voltage source to the I/O circuitry; in response to detecting a current draw from the I/O circuitry that satisfies a first threshold criterion, causing the first transistor to be activated; and causing the second transistor to be deactivated over a time interval during which the I/O circuitry is powered by the first voltage source and the second voltage source.

Abstract: A variety of applications can include apparatus having a recessed channel FinFET. The recessed channel FinFET can include one or more fin structures between the source region and the drain region, where the one or more fin structures are recessed from a top level of the source region and from a top level of the drain region. The recessed channel FinFET can include a gate recessed from the top level of a source region and a drain region, where the gate can be separated from tip regions of the fin structures by a gate dielectric defining a channel between the source region and the drain region. Recessed channel FinFETs can be structured in a periphery to an array of a memory device and can be fabricated in a process merged with forming access lines to the array.

Abstract: Secure communication in accessing a network is described herein. An example apparatus can include a memory and a processor coupled to the memory. The processor can be configured to receive an identity public key from the identity device. The identity public key can be received in response to providing, to the identity device, a request to modify content of the identity device. The processor can be further configured to encrypt data corresponding to subscriber information using the identity public key, provide (to the identity device) the encrypted data to store the subscriber information in the identity device, and access a network operated by a network operator via the data stored in the identity device.

Abstract: An example memory sub-system includes a memory device and a processing device, operatively coupled to the memory device. The processing device is configured to receive a memory access request specifying a logical address of a data item and a memory access operation to be performed with respect to the data item; produce a truncated logical address by applying a predefined mathematical transformation to the specified logical address; identifying, in an address translation table, an address translation table entry identified by the truncated logical address; and perform the memory access operation using a physical address specified by the address translation table entry.

Abstract: The present disclosure includes apparatuses, methods, and systems for pre-decoder circuitry. An embodiment includes a memory array including a plurality of memory cells, decoder circuitry coupled to the memory array, wherein the decoder circuitry comprises a first n-type transistor having a first gate and a second n-type transistor having a second gate, and pre-decoder circuitry configured to provide a bias condition for the first gate and second gate to provide a selection signal to one of the plurality of memory cells, wherein the bias condition comprises: a positive voltage for the first gate and a negative voltage for the second gate for a positive configuration for the memory cells, and zero volts for the first gate and the negative voltage for the second gate for a negative configuration for the memory cells.

Abstract: A deferred error correction code (ECC) scheme for memory devices is disclosed. In one embodiment, a method is disclosed comprising starting a deferred period of operation of a memory system in response to detecting the satisfaction of a condition; receiving an operation during the deferred period, the operation comprising a read or write operation access one or more memory banks of the memory system; deferring ECC operations for the operation; executing the operation; detecting an end of the deferred period of operation; and executing the ECC operations after the end of the deferred period.

Abstract: A system includes a memory array; and a processing device coupled to the memory array. The processing device may be configured to iteratively adjust an active processing level, wherein, for each iteration, the processing device is configured to: determine a first set of read results corresponding to the active processing level, determine a second set of read results based on an offset processing level different than the active processing level, and incrementally adjust the active processing level based on a comparison of the first and the second read results.

Abstract: Memory devices, systems including memory devices, and methods of operating memory devices are described, in which memory devices are configured to poison data based on an indication provided by a host device coupled with the memory devices. The indication may include which one or more bits to poison (invert) at which stages of performing write or read operations. In some embodiments, the memory device may invert one or more bits according to the indication and then correct one or more errors associated with inverting the one or more bit to verify its on-die ECC functionality. In some embodiments, the memory device may provide the host device with poisoned data including one or more bits inverted according to the indication such that the host device may test system-level ECC functionality using the poisoned data.

Abstract: Methods, systems, and devices for error protection for managed memory devices are described. In some examples, a memory system may receive data units from a host device. The data units may include respective sets of parity bits, and the memory system may perform an error detection operation on the data units. A first controller of the memory system may generate a protocol unit using data (e.g., a subset of data) from the data units. The protocol unit may include a set of parity bits (e.g., a different set of parity bits), and a second controller of the memory system may perform an error detection operation on the protocol unit. The second controller of the memory system may generate a data storage unit using data (e.g., a subset of data) from the protocol unit, and may store the data unit and another set of parity bits to a memory device.

Abstract: A computing system having memory components, including first memory and second memory. The computing system further includes a processing device, operatively coupled with the memory components, to: store a memory allocation value in association with a context of executing instructions; execute a set of instructions in the context; allocate, for execution of the set of instructions in the context, an amount of memory, including an amount of the first memory and an amount of the second memory; and access the amount of the second memory via the amount of the first memory during the execution of the set of instructions in the context.

Abstract: A memory device includes a page buffer with a cache register and data registers, a memory array with a set of sub-blocks of memory cells configured as single-level cell (SLC) memory, and control logic. The control logic performs operations including: causing a first page of SLC data to be stored in the cache register; causing the first page of the SLC data to be moved from the cache register to a first data register; causing a subsequent page of the SLC data to be stored in the cache register; causing the SLC data stored in the cache register and in the data registers to be concurrently programmed to the set of sub-blocks, where the first page is programmed to a first sub-block and the subsequent page is programmed to a subsequent sub-block; and causing a subset of the operations for programming the set of sub-blocks to be performed in parallel.

Abstract: Methods, systems, and devices for status check using signaling are described. A memory system may receive ready signals from memory dies. The ready signal may indicate whether a memory die is available to receive a command. The memory system may generate an indicator of whether the memory die is available based on values of ready signals. The memory system may output the indicator to a controller over one or more pins based on generating the indicator.

Abstract: A memory device includes a memory array including a plurality of wordline groups, each wordline group of the plurality of wordline groups including a set of even wordlines and a set of odd wordlines, and control logic, operatively coupled with the memory array, to perform operations including identifying a set of failing wordline groups from the plurality of wordline groups, the set of failing wordline groups including at least one failing wordline group determined to have failed a first erase verify of an erase verify process, and causing a second erase verify of the erase verify process to be performed sequentially with respect to each failing wordline group of the set of failing wordline groups.

Abstract: Methods, systems, and devices for separate cores for media management of a memory sub-system are described. A controller of a memory sub-system can include a first processing core and a second processing core for a garbage collection procedure. The first processing core can perform a first set of one or more operations associated with a read process of a first stage of a garbage collection procedure for a plurality of transfer units of the memory sub-system. The second processing core can perform a second set of one or more operations associated with a write process of the first stage of the garbage collection procedure, where the second set of one or more operations are concurrent with the first set of one or more operations.

Abstract: Implementations described herein relate to resource allocation for a memory built-in self-test. A memory device may read one or more bits, associated with a memory built-in self-test, that are stored in a mode register of the memory device. The memory device may identify one or more memory resources of the memory device, based on reading the one or more bits, that are to be used for performing the memory built-in self-test. The one or more memory resources of the memory device may be addressable memory resources configured for performing standard memory operations of the memory device. The memory device may perform the memory built-in self-test for the memory device using the one or more memory resources of the memory device.

Abstract: Methods, systems, and devices for host verification for a memory device are described. A memory device may receive a first value from a host device that is associated with an identification of the host device after an event. The memory device may transmit a second value to the host device that is based on the first value and comprises a random set of bits. The memory device may receive from the host device data or a command that comprises an encrypted third value that is based at least in part on the second value and a secret shared between the host device and the memory device. The memory device may also enable a functionality of the memory device based on the encrypted third value.