Abstract: The present invention includes a method to use a phase modulating micromirror array to create an intensity image that has high image fidelity, good stability through focus and good x-y symmetry. Particular aspects of the present invention are described in the claims, specification and drawings.

Abstract: The invention relates to methods to improve SLMs, in particular to reflecting micromechanical SLMs, for applications with simple system architecture, high precision, high power handling capability, high throughput, and/or high optical processing capability. Applications include optical data processing, image projection, lithography, image enhancement, holography, optical metrology, coherence and wavefront control, and adaptive optics. A particular aspect of the invention is the achromatization of diffractive SLMs so they can be used with multiple wavelengths sequentially, simultaneously or as a result of spectral broadening in very short pulses.

Abstract: The present invention relates to a method to improve at least one feature edge steepness in an image to be exposed onto a moving workpiece, comprising the actions of: moving the image in essentially the same direction relative to the direction of movement of the workpiece, synchronizing said moving of the image with a pulse length of an exposure radiation source.

Abstract: The present invention relates to Optical Maskless Lithography (OML). In particular, it relates to providing OML with a recognizable relationship to mask and phase-shift mask techniques.

Abstract: The present invention relates to a method for determining the coordinates of an arbitrarily shaped pattern in a deflector system. The method basically comprises the steps of: moving the pattern in a first direction (X), calculating the position of the edge of the pattern by counting the number of micro sweeps, performed in a perpendicular direction (Y), until the edge is detected, determining a correction function for the surface reflecting variations in a third direction (Z) perpendicular to both the first (X) and the second (Y) directions, and determining the coordinates by relating the number of counted micro sweeps to the speed of the movement of the pattern using the correction function to compensate for variations in the third direction. The invention also relates to software implementing the method.

Abstract: A method and system for a high-speed datapath for a high-performance pattern generator such as an analog SLM for generating the image is disclosed. The data path has provisions for completely independent parallel data flows giving true scalability to arbitrarily high throughput. In an exemplary embodiment areas on the SLM are assigned to specific rasterizing and fracturing processors. There is an overlap between fields for blending of the edges in the pattern and for computation of interaction between features in the pattern. The datapath has data integrity checks and a recovery mode when an error condition is raised, allowing it to recover from most errors without creating new errors.

Abstract: The present invention relates to preparation of patterned workpieces in the production of semiconductor and other devices. Methods and devices are described utilizing resist and transfer layers over a workpiece substrate. The methods and devices produce small feature dimensions in masks and phase shift masks. The methods described may apply to both masks and direct writing on other workpieces having similarly small features, such as semiconductor, cryogenic, magnetic and optical microdevices.

Abstract: A method, apparatus for and a device manufactured by the same, for printing a microlithographic pattern with high fidelity and resolution using simultaneously optimized illuminator and pupil filters having semi-continuous transmission profiles. The optimization can be further improved if the illuminator and pupil filters are polarization selective. The optimization method becomes a linear programming problem and uses a set of relevant features in the merit function. With a suitably chosen merit function and a representative feature set both neutral printing without long-range proximity effects and good resolution of small features can be achieved. With only short-range proximity effects OPC correction is simple and can be done in real time using a perturbation method.

Abstract: An aspect of the present invention includes a method for patterning a workpiece covered at least partly with a layer sensitive to electromagnetic radiation by simultaneously using a plurality of exposure beams. In an example embodiment it is determined if any of the beams have an actual position relative to a reference beam which differs from its intended position. An adjustment of the exposure dose for a wrongly positioned beam is performed if said beam is printed at en edge of a feature. Other aspects of the present invention are reflected in the detailed description, figures and claims.

Abstract: The present invention relates to a method for manufacturing a MEMS device, including the actions of: providing a substrate having a back and front surface essentially in parallel with each other, defining in said substrate at least one hidden support by removing material from said substrate, connecting said at least one hidden support onto a wafer with at least one actuation electrode capable to actuate at least a part of said substrate, wherein a rotational axis of said reflective surface is essentially perpendicular to said hidden support. The invention also relates to the MEMS as such.

Abstract: An aspect of the present invention includes a method for patterning a workpiece covered at least partly with a layer sensitive to electromagnetic radiation by using a plurality of exposure beams having a predetermined separation in at least a first direction for exposing a pattern onto said workpiece, where said predetermined separation is fixed to an initial system pitch in said first direction, comprising the actions of: scaling a pattern pitch in said first direction to be an integer multiple of said system pitch, adjusting the initial system pitch in said first direction to be an adjusted system pitch to maintain a scale of said pattern, adjusting said predetermined separation of exposure beams to said adjusted system pitch.

Abstract: An apparatus for patterning a workpiece may include at least two spatial light modulators. The at least two spatial light modulators may receive and relay electromagnetic radiation from an electromagnetic radiation source toward a workpiece. The electromagnetic radiation may be split into at least two beams in an optical plane between the at least two spatial light modulators and at least one of an illuminator pupil and a conjugate optical plane. Each of the at least two spatial light modulators may receive a corresponding one of the at least two beams.

Abstract: A spatial light modulator may include a plurality of deflectable modulating elements. Each of the deflectable modulating elements may further include a support structure, an electrostatically deflectable mirror element and at least one electrode. The mirror element may be set to a deflection state by charging and selectively discharging a capacitor coupled to the at least one electrode.

Abstract: The present invention relates to an apparatus (100) for patterning a workpiece arranged at an image plane and sensitive to electromagnetic radiation, comprising a source emitting electromagnetic radiation onto an object plane and at least two spatial light modulators each comprising numerous of object pixels, adapted to receive said electromagnetic radiation at said object plane and to relay said electromagnetic radiation toward said workpiece, wherein said electromagnetic radiation is split into at least two beams, which beams will impinge on different spatial light modulators, by a beam splitting device arranged at an optical plane between said spatial light modulators and an illuminator pupil or a conjugate optical plane. The invention also relates to a method for patterning a workpiece with a plurality of spatial light modulators.

Abstract: The present invention relates to a method to determine a position of at least one mark provided on a substrate, comprising the actions of: detecting a first mark on said substrate by using a first detector, detecting a first set of marks comprising at least a second mark on said substrate by using a second detector, computing a first list of relative distance(s) between said first mark and mark(s) in said first set of marks, detecting the second mark on said substrate by using one of said first or said second detectors, detecting a second set of marks comprising at least said first mark on said substrate by using an available detector, computing a second list of relative distance(s) between said second mark and mark(s) in said second set of marks, determining the position of at least one mark by using the information in said first and said second lists of relative distance(s).

Abstract: An acousto-optic cell is used in a method and device for patterning a workpiece, for exposing a radiation sensitive layer on a workpiece such as a mask or a device substrate. The acousto-optic cell includes an array of transducers. The transducers may supply columns of ultrasound to the cell. They may produce a two dimensional modulation pattern within the cell. Electromagnetic radiation is modulated by the cell and related to a workpiece. The modulation of the cell may modulate the amplitude and/or phase of the electromagnetic radiation. In some embodiments, adjoining columns of ultrasound may be positioned so that portions of the electromagnetic radiation partially overlap and interfere, after they are modulated.

Abstract: A method may comprise emitting electromagnetic radiation onto a workpiece and storing data describing geometrical elements in a pattern. The electromagnetic radiation may be focused and/or reflected in a first direction, and a power level of the electromagnetic radiation may be modulated according to the stored data. A guiding rail may be moved in the first direction and a carriage may be moved in a second direction, each in one of a continuous and stepwise manner. The second direction may be substantially perpendicular to the first direction. A pattern may be exposed on the workpiece.

Abstract: The invention addresses the lack of comprehensive and quantitative methods for measurements of unwanted visual “mura” effects in displays and image sensors. Mura is generated by errors that are significantly smaller than what is needed for the function of the device, and sometimes smaller than the random variations in the patterns or structures. Capturing essentially all mura defects in a workpiece in a short time requires a daunting combination of sensitivity, statistical data reduction and speed. The invention devices an inspection method, e.g. optical, which maximizes the sensitivity to mura effects and suppresses artifacts from the mura inspection hardware itself and from noise. It does so by scanning the sensor, e.g. a high-resolution camera, creating a region of high internal accuracy across the mura effects. One important example is for mura related to placement errors, where a stage with better than 10 nanometer precision within a 100 mm range is created.

Abstract: The present disclosure relates to phase-sensitive calibration of an SLM system. In particular, it relates to selecting among local calibrations when there is more than one calibration that satisfies a calibration intensity criteria. It utilizes information available before Fourier filtering, from non-zeroth order diffraction components to counter drift among alternative local calibrations.

Abstract: This disclosure relates to lithography using pulsed laser illumination. In particular it relates to lithography for producing electronic devices on wafers using multi-mode excimer and molecular lasers, e.g. KrF, ArF, and F2 lasers. It may also apply to illumination systems where several single-mode sources are mixed or one single-mode laser beam is split and recombined with time delays, thereby creating an equivalent multimode source and to EUV lithography. Particular aspects of the present invention are described in the claims, specification and drawings.