Abstract: An acousto-optic cell is used in a method and device for patterning a workpiece, for exposing a radiation sensitive layer on a workpiece such as a mask or a device substrate. The acousto-optic cell includes an array of transducers. The transducers may supply columns of ultrasound to the cell. They may produce a two dimensional modulation pattern within the cell. Electromagnetic radiation is modulated by the cell and related to a workpiece. The modulation of the cell may modulate the amplitude and/or phase of the electromagnetic radiation. In some embodiments, adjoining columns of ultrasound may be positioned so that portions of the electromagnetic radiation partially overlap and interfere, after they are modulated.

Abstract: The present invention relates to a method and a system for predicting and/or measuring and correcting geometrical errors in lithography using masks, such as large-area photomasks or reticles, and exposure stations, such as wafer steppers or projection aligners, printing the pattern of said masks on a workpiece, such as a display panel or a semiconductor wafer. A method to compensate for process variations when printing a pattern on a workpiece, including determining a two-dimensional CD profile in said pattern printed on said workpiece, generating a two-dimensional compensation file to equalize fluctuations in said two-dimensional CD-profile, and patterning a workpiece with said two-dimensional compensation file.

Abstract: The present disclosure relates to fracturing of polygon data, with one application being microlithography. In particular, it relates to preserving data regarding edges and/or vertices of the original polygons as the polygons are triangulated and even if the results of triangulation are further fractured.

Abstract: The present invention relates to high speed datapaths, sometimes including mixed digital and analog voltage signals. In particular, it relates to error checking strategies for large data volumes, in digital and/or analog domains and to analog signal patterns that accelerate charge loading of micromirrors in an SLM. Particular aspects of the present invention are described in the claims, specification and drawings.

Abstract: In order to prevent negative effects of imprinting an the addressing accuracy of deformable actuators, a method for controlling deformable actuators has, during an event period, driving the first and the second deformable actuator for causing the deformable actuators to assume a first and a second deformation state, respectively; and, before or after the event period, driving the first and the second deformable actuator for causing the deformable actuators to assume deformations states to counteract an imprinting caused during the event period by approximating the loads applied to the deformable actuators to each other. According to an embodiment, before or after the event period, for a period substantially as long as the operation period, the first and the second deformable actuator are driven such that the first deformable actuator assumes the second deformation state and the second deformable actuator assumes the first deformation state.

Abstract: The present invention relates to alignment of a writing system and a workpiece. In particular, it relates to alignment to write a second layer pattern on a workpiece that has a first layer pattern, using an SLM. It extends to producing a mask or reticle, and to producing a layer of a device using the mask or reticle. Particular aspects of the present invention are described in the claims, specification and drawings.

Abstract: The present invention relates to a method for creating a pattern on a workpiece sensitive to electromagnetic radiation. Electromagnetic radiation is emitted onto a computer controlled reticle having a multitude of modulating elements (pixels). The pixels are arranged in said computer controlled reticle according to a digital description. An image of said computer controlled reticle is created on said workpiece, wherein said pixels in said computer controlled reticle are arranged in alternate states along at least a part of one feature edge in order to create a smaller address grid. The invention also relates to an apparatus for creating a pattern on a workpiece. The invention also relates to a semiconducting wafer and a mask.

Abstract: The present invention relates to preparation of patterned workpieces in the production of semiconductor and other devices. Methods and devices are described utilizing resist and transfer layers over a workpiece substrate. The methods and devices produce small feature dimensions in masks and phase shift masks. The methods described may apply to both masks and direct writing on other workpieces having similarly small features, such as semiconductor, cryogenic, magnetic and optical microdevices.

Abstract: The invention relates to production and precision patterning of work pieces, including manufacture of photomask for photolithography and direct writing on other substrates, such as semiconductor substrates. In particular, it relates to applying corrections to pattern data, such as corrections for distortions in the field of an SLM exposure stamp. It may be used to produce a device on a substrate. Alternatively, the present invention may be practiced as a device practicing disclosed methods or as an article of manufacture, particularly a memory, either volatile or non-volatile memory, including a program adapted to carry out the disclosed methods.

Abstract: A spatial light modulator may include a plurality of deflectable modulating elements. Each of the deflectable modulating elements may further include a support structure, an electrostatically deflectable mirror element and at least one electrode. The mirror element may be set to a deflection state by charging and selectively discharging a capacitor coupled to the at least one electrode.

Abstract: The present invention relates to high speed datapaths, sometimes including mixed digital and analog voltage signals. In particular, it relates to error checking strategies for large data volumes, in digital and/or analog domains and to analog signal patterns that accelerate charge loading of micromirrors in an SLM. Particular aspects of the present invention are described in the claims, specification and drawings.

Abstract: The present invention relates to an immersion lithographic system for patterning a work piece arranged at an image plane and covered at least partly with a layer sensitive to electromagnetic radiation. Said system comprising a source emitting electromagnetic radiation onto an object plane, a mask, adapted to receive and modulate said electromagnetic radiation at said object plane and to relay said electromagnetic radiation toward said work piece, and an immersion medium contacting at least a portion of a final lens of said lithographic system and a portion of said work piece, wherein an area of said contacting is restricted by capillary forces. The invention further relates to a method for patterning a workpiece.

Abstract: The present invention relates to an apparatus for creating a pattern on a workpiece sensitive to radiation, such as a photomask a display panel or a microoptical device. The apparatus may include a source for emitting light flashes, a spatial modulator having modulating elements (pixels), adapted to being illuminated by the radiation, and a projection system creating an image of the modulator on the workpiece. It may further include an electronic data processing and delivery system receiving a digital description of the pattern to be written, converting the pattern to modulator signals, and feeding the signals to the modulator. An electronic control system may be provided to control a trigger signal to compensate for flash-to-flash time jitter in the light source.

Abstract: The present invention relates to a method for adjusting a pattern to be imaged onto a workpiece. The pattern representing an image is divided in a plurality of regions. A pattern density in said plurality of region is computed. At least one feature in at least one of said plurality of regions is adjusted based on the pattern density in at least one other region. An adjusted pattern is fed to a modulator. The image is created on said workpiece by using said corrected pattern. The invention also relates to an apparatus for imaging adjusted pattern on a workpiece, a semiconducting wafer to be imaged with an adjusted pattern and a mask or a reticle to be imaged with an adjusted pattern.

Abstract: The present invention includes a method to use a phase modulating micromirror array to create an intensity image that has high image fidelity, good stability through focus and good x-y symmetry. Particular aspects of the present invention are described in the claims, specification and drawings.

Abstract: The present invention relates to a method to reduce the effect of jitter in a pulsed laser system, the method comprising the actions of sending a trigger signal to a power system for producing laser pulses, delaying said trigger signal a first period of time, detecting a period of time between said sending of said triger signal and a corresponding laser pulse, calculating a difference between said detected period of time and a requested period of time, correcting said first period of time in a following laser pulse by said calculated difference. The invention also relates to a pulsed laser system and a laser pattern generator.

Abstract: The invention relates to production and precision patterning of work pieces, including manufacture of photomask for photolithography and direct writing on other substrates, such as semiconductor substrates. In particular, it relates to applying corrections to pattern data, such as corrections for distortions in the field of an SLM exposure stamp. It may be used to produce a device on a substrate. Alternatively, the present invention may be practiced as a device practicing disclosed methods or as an article of manufacture, particularly a memory, either volatile or non-volatile memory, including a program adapted to carry out the disclosed methods.

Abstract: The present invention relates to preparation of patterned workpieces in the production of semiconductor and other devices. Methods and devices are described utilizing resist and transfer layers over a workpiece substrate. The methods and devices produce small feature dimensions in masks and phase shift masks. The methods described may apply to both masks and direct writing on other workpieces having similarly small features, such as semiconductor, cryogenic, magnetic and optical microdevices.

Abstract: We disclose a method for stabilizing against a drift of a deflection of a micromirror device having an electrostatic actuator, including the actions of: providing an actuator including at least two members beneath said micromirror and at least one electrode beneath said micromirror, at least one of said at least two members being formed of a semiconducting material, providing a surface layer on said at least one semiconducting member facing towards said other member of said actuator, said surface layer having a density of carriers being 1017 cm3 or higher.

Abstract: The technology disclosed relates to immersion lithography, in particular to the exposure of masks by deep and vacuum ultraviolet wavelengths with so-called sub-wavelength resolution. It also is likely to be useful for other methods of sub-wavelength lithography such as lithography on silicon wafers, surface-acoustic wave (SAW) and diffractive optical devices. In particular, it relates to controlling the contact angle between the immersion fluid and the top-most layer of the substrate, which is in contact with immersion fluid, by tuning the surface energy of the top-most layer and properties of the immersion fluid. It is useful to control this interface, in which issues such as entrainment of bubbles in the immersion fluid and puddles of fluid remaining after immersion have been encountered.