Abstract: Measuring SRAM structures having FinFET transistors by obtaining, on a production semiconductor wafer, spectra of a SRAM production structure including FinFET fins and gates, identifying SRAM reference structure spectra corresponding to the spectra, the reference structure from measuring, on a reference semiconductor wafer, a reference structure including a layout of FinFET fins having gates, injecting, into an OCD model of the production structure, fin target parameter values, corresponding to the identified reference structure spectra, from measuring, on the reference wafer, a fin target including a layout of exposed FinFET fins lacking gates similar or identical to the reference structure layout, correspondence between the fin target parameter values and the reference structure spectra previously identified by ML, and determining measurement values for the FinFET gates of the production structure by fitting reference spectra associated with the production structure in the OCD model to the production struct

Abstract: A method and system are presented for use in measuring one or more characteristics of patterned structures. The method comprises: providing measured data comprising data indicative of at least one Raman spectrum obtained from a patterned structure under measurements using at least one selected optical measurement scheme each with a predetermined configuration of at least one of illuminating and collected light conditions corresponding to the characteristic(s) to be measured; processing the measured data, and determining, for each of the at least one Raman spectrum, a distribution of Raman-contribution efficiency (RCE) within at least a part of the structure under measurements, being dependent on characteristics of the structure and the predetermined configuration of the at least one of illuminating and collected light conditions in the respective optical measurement scheme; analyzing the distribution of Raman-contribution efficiency and determining the characteristic(s) of the structure.

Abstract: A method and system are presented for use in controlling a multiple patterning process of n patterning stages subsequently applied to a sample to produce a target pattern thereon. The method comprises: providing intermediate measured data indicative of an optical response of the sample after being patterned by m-th patterning stage, 1?m<n; processing said intermediate measured data, determining at least a location parameter of a predetermined feature of the pattern, and generating measured data indicative of said at least one selected parameter; utilizing said at least location parameter of the predetermined feature for optimizing a data interpretation model for interpretation of measured data indicative of an optical response from the sample being patterned by k-th subsequent patterning stage, m<k?n.

Abstract: A method and system are presented for use in scatterometry analysis for a patterned structure. According to this technique, a model of a patterned structure is provided comprising a selected number of virtual segment data pieces indicative of a respective number of segments of the patterned structure along Z-axis through the structure. Each of the segment data pieces is processed for determining a matrix [?n] comprising Z-axis derivatives of electromagnetic fields' response of the segment to incident field based on Maxwell's equations' solution, and transforming this matrix [?n] into an approximated response matrix [?n] corresponding to the electromagnetic field interaction between two different points spaced along the Z-axis. The transformation is preferably carried out by a GPU, and comprises embedding said matrix [?n] in a series expansion of said matrix exponential term [?n].

Abstract: A method and system are presented for use in optical measurements on patterned structures. The method comprises performing a number of optical measurements on a structure with a measurement spot configured to provide detection of light reflected from an illuminating spot at least partially covering at least two different regions of the structure. The measurements include detection of light reflected from said at least part of the at least two different regions comprising interference of at least two complex electric fields reflected from said at least part of the at least two different regions, and being therefore indicative of a phase response of the structure, carrying information about properties of the structure.

Abstract: A metrology system is presented for measuring parameters of a structure. The system comprises: an optical system and a control unit. The optical system is configured for detecting light reflection of incident radiation from the structure and generating measured data indicative of angular phase of the detected light components corresponding to reflections of illuminating light components having different angles of incidence. The control unit is configured for receiving and processing the measured data and generating a corresponding phase map indicative of the phase variation along at least two dimensions, and analyzing the phase map using modeled data for determining one or more parameters of the structure.

Abstract: A test structure is presented for use in metrology measurements of a sample pattern. The test structure comprises a main pattern, and one or more auxiliary patterns. The main pattern is formed by a plurality of main features extending along a first longitudinal axis and being spaced from one another along a second lateral axis. The one or more auxiliary patterns are formed by a plurality of auxiliary features associated with at least some of the main features such that a dimension of the auxiliary feature is in a predetermined relation with a dimension of the respective main feature. This provides that a change in a dimension of the auxiliary feature from a nominal value affects a change in non-zero order diffraction response from the test structure in a predetermined optical measurement scheme, and this change is indicative of a deviation in one or more parameters of the main pattern from nominal value thereof.

Abstract: A sample comprising an overlay target is presented. The overlay target comprises at least one pair of patterned structures, the patterned structures of the pair being accommodated in respectively bottom and top layers of the sample with a certain vertical distance h between them, wherein a pattern in at least one of the patterned structures has at least one pattern parameter optimized for a predetermined optical overlay measurement scheme with a predetermined wavelength range.

Abstract: A method and system are presented for use in model-based optical measurements in patterned structures. The method comprises: selecting an optimal optical model for interpretation of optical measured data indicative of optical response of the structure under measurements. The selection of the optimal optical model comprises: creating a complete optical model with floating parameters defining multiple configurations of said complete model including one or more model configurations describing an optical response of the structure under measurements, utilizing the complete model for predicting a reference optical response from the structure and generating corresponding virtual reference data, and using the virtual reference data for selecting the optimal optical model for interpretation of the optical measured data.

Abstract: A method and system are presented for monitoring measurement of parameters of patterned structures based on a predetermined fitting model. The method comprises: (a) providing data indicative of measurements in at least one patterned structure; and (b) applying at least one selected verification mode to said data indicative of measurements, said at least one verification mode comprising: I) analyzing the data based on at least one predetermined factor and classifying the corresponding measurement result as acceptable or unacceptable, II) analyzing the data corresponding to the unacceptable measurement results and determining whether one or more of the measurements providing said unacceptable result are to be disregarded, or whether one or more parameters of the predetermined fitting model are to be modified.

Abstract: A data analysis method and system are presented for use in determining one or more parameters of a patterned structure located on top of an underneath layered structure. According to this technique, input data is provided which includes first measured data PMD being a function ƒ of spectral intensity I? and phase ?, PMD=ƒ(I?;?), corresponding to a complex spectral response of the underneath layered structure, and second measured data Smeas indicative of specular reflection spectral response of a sample formed by the patterned structure and the underneath layered structure. Also provided is a general function F describing a relation between a theoretical optical response Stheor of the sample and a modeled optical response Smodel of the patterned structure and the complex spectral response PMD of the underneath layered structure, such that Stheor=F(Smodel; PMD).

Abstract: A surface planarization system is presented. The system comprises an external energy source for generating a localized energy distribution within a processing region, and a control unit for operating the external energy source to create, by the localized energy distribution, a predetermined temperature pattern within the processing region such that different locations of the processing region are subjected to different temperatures. This provides that when a sample (e.g. semiconductor wafer) during its interaction with an etching material composition is located in the processing region, the temperature pattern at different locations of the sample's surface creates different material removal rates by the etching material composition (different etch rates).

Abstract: A method for use in planning metrology measurements, the method comprising: providing inverse total measurement uncertainty (TMU) analysis equations for upper and lower confidence limits TMUUL and TMULL of the TMU being independent on prior knowledge of measurements by a tool under test (TuT) and a reference measurement system (RMS), thereby enabling estimation of input parameters for said equations prior to conducting an experiment of the TMU analysis; and determining at least one of a total number N of samples to be measured in the TMU analysis and an average number ns of measurements per sample by the RMS.

Abstract: A test structure and method of its manufacture are presented for use in metrology measurements of a sample pattern. The test structure comprises a test pattern comprising a portion of the sample pattern including at least one selected feature and a blocking layer at least partially covering regions of the test structure adjacent to the at least one selected region.

Abstract: A control system is presented for use in measuring one or more parameters of a sample. The control system comprises an input utility and a processor utility. The input utility is configured for receiving input data including first data comprising X-ray Diffraction or High-Resolution X-ray Diffraction (XRD) response data of the sample indicative of a material distribution in the sample, and second data comprising optical response data of the sample to incident light indicative of at least a geometry of the sample. The processor utility is configured and operable for processing and analyzing one of the first and second data for optimizing the other one of the first and second data, and utilizing the optimized data for determining said one or more parameters of the sample including a strain distribution in the sample.

Abstract: A method and system are presented for use in controlling a process applied to a patterned structure having regions of different layered stacks. The method comprises: sequentially receiving measured data indicative of optical response of the structure being processed during a predetermined processing time, and generating a corresponding sequence of data pieces measured over time; and analyzing and processing the sequence of the data pieces and determining at least one main parameter of the structure.

Abstract: A measurement system for use in measuring parameters of a patterned sample is presented. The system comprises: a broadband light source; an optical system configured as an interferometric system; a detection unit; and a control unit. The interferometric system defines illumination and detection channels having a sample arm and a reference arm comprising a reference reflector, and is configured for inducing an optical path difference between the sample and reference arms; the detection unit comprises a configured and operable for detecting a combined light beam formed by a light beam reflected from said reflector and a light beam propagating from a sample's support, and generating measured data indicative of spectral interference pattern formed by at least two spectral interference signatures. The control unit is configured and operable for receiving the measured data and applying a model-based processing to the spectral interference pattern for determining one or more parameters of the pattern in the sample.

Abstract: A mirror assembly is provided for producing beam bundles from the beam of a light source, wherein the beam bundles includes a first beam bundle having a first main beam direction, a second beam bundle having a second main beam direction, and preferably further beam bundles having further main beam directions. The assembly includes a first mirror segment having a first focal point, which converts a first partial region of the beam of the light source into the first beam bundle, a second mirror segment having a second focal point, which converts a second partial region of the beam of the light source into the second beam bundle, and preferably further mirror segments having further focal points, which convert further partial regions of the beam of the light source into further beam bundles. The back side of the mirror segments have a curvature which is concentric to the light source.

Abstract: An optical method and system are presented for use in measurement of isolated features of a structure. According to this technique, Back Focal Plane Microscopy (BFM) measurements are applied to a structure and measured data indicative thereof is obtained, wherein the BFM measurements utilize dark-field detection mode while applying pinhole masking to incident light propagating through an illumination channel towards the structure, the measured data being thereby indicative of a scattering matrix characterizing scattering properties of the structure, enabling identification of one or more isolated features of the structure.

Abstract: An article is presented configured for controlling a multiple patterning process, such as a spacer self-aligned multiple patterning, to produce a target pattern. The article comprises a test site carrying a test structure comprising at least one pair of gratings, wherein first and second gratings of the pair are in the form of first and second patterns of alternating features and spaces and differ from the target pattern by respectively different first and second values which are selected to provide together a total difference such that a differential optical response from the test structure is indicative of a pitch walking effect.