Abstract: Method and system for measuring one or more parameters of a patterned structure, using light source producing an input beam of at least partially coherent light in spatial and temporal domains, a detection system comprising a position sensitive detector for receiving light and generating measured data indicative thereof, an optical system configured for focusing the input light beam onto a diffraction limited spot on a sample's surface, collecting an output light returned from the illuminated spot, and imaging the collected output light onto a light sensitive surface of the position sensitive detector, where an image being indicative of coherent summation of output light portions propagating from the structure in different directions.

Abstract: A method of controlling a manufacturing process, the method including the steps of a) providing a testing area with a periodic structure, where the periodic structure includes a series of sets of patterned features, b) illuminating the periodic structure with a light, thereby producing a non-zero order diffraction signal, c) collecting the diffraction signal to produce a test signature, d) matching the test signature with a reference signature, where the reference signature was previously produced by performing steps a), b), and c) with respect to a reference structure that is at least similar to the periodic structure, and e) controlling a manufacturing process using a control setting set associated with the matching reference signature.

Abstract: A metrology system is presented for measuring parameters of a structure. The system comprises: an optical system and a control unit. The optical system is configured for detecting light reflection of incident radiation from the structure and generating measured data indicative of angular phase of the detected light components corresponding to reflections of illuminating light components having different angles of incidence. The control unit is configured for receiving and processing the measured data and generating a corresponding phase map indicative of the phase variation along at least two dimensions, and analyzing the phase map using modeled data for determining one or more parameters of the structure.

Abstract: A measurement method and system are presented for in-line measurements of one or more parameters of thin films in structures progressing on a production line. First measured data and second measured data are provided from multiple measurements sites on the thin film being measured, wherein the first measured data corresponds to first type measurements from a first selected set of a relatively small number of the measurement sites, and the second measured data corresponds to second type optical measurements from a second set of significantly higher number of the measurements sites. The first measured data is processed for determining at least one value of at least one parameter of the thin film in each of the measurement sites of said first set. Such at least one parameter value is utilized for interpreting the second measured data, thereby obtaining data indicative of distribution of values of said at least one parameter within said second set of measurement sites.

Abstract: An inspection system and method are presented for inspecting structures having a pattern formed by an array of elongated grooves having high aspect-ratio geometry, such as semiconductor wafers formed with vias. The inspection system comprises an imaging system and a control unit. The imaging system is configured and operable for imaging the structure with a dark-field imaging scheme and generating a dark-field image. The control unit comprises an analyzer module for analyzing pixels brightness in the dark-field image for identifying a defective groove, being a groove characterized by pixels brightness in the dark-field image lower than nominal brightness by a predetermined factor.

Abstract: A control system and method are provided for use in managing optical measurements on target structures. The control system comprises: data input utility for receiving input data indicative of a size of a target structure to be measured and input data indicative of illumination and collection channels of an optical measurement system; data processing utility for analyzing the input data, and an interplay of Point Spread Functions (PSFs) of the illumination and collection channels, and determining data indicative of optional tailoring of apertures to be used in the optical measurement system for optimizing ensquared energy for measurements on the given target structure, the optimal tailoring composing at least one of the following: an optimal ratio between numerical apertures of the illumination and collection channels; and an optimal orientation offset of physical apertures in the illumination and collection channels.

Abstract: A method and system are presented for use in controlling a process applied to a patterned structure having regions of different layered stacks. The method comprises: sequentially receiving measured data indicative of optical response of the structure being processed during a predetermined processing time, and generating a corresponding sequence of data pieces measured over time; and analyzing and processing the sequence of the data pieces and determining at least one main parameter of the structure.

Abstract: A system and method are presented for use in inspection of patterned structures. The system comprises: data input utility for receiving first type of data indicative of image data on at least a part of the patterned structure, and data processing and analyzing utility configured and operable for analyzing the image data, and determining a geometrical model for at least one feature of a pattern in said structure, and using said geometrical model for determining an optical model for second type of data indicative of optical measurements on a patterned structure.

Abstract: A method and system are presented for use in optical measurements on patterned structures. The method comprises performing a number of optical measurements on a structure with a measurement spot configured to provide detection of light reflected from an illuminating spot at least partially covering at least two different regions of the structure. The measurements include detection of light reflected from said at least part of the at least two different regions comprising interference of at least two complex electric fields reflected from said at least part of the at least two different regions, and being therefore indicative of a phase response of the structure, carrying information about properties of the structure.

Abstract: A test structure and method of its manufacture are presented for use in metrology measurements of a sample pattern.

Abstract: Alignment of layers during manufacture of a multi-layer sample is controlled by applying optical measurements to a measurement site in the sample. The measurement site includes two diffractive structures located one above the other in two different layers, respectively. The optical measurements include at least two measurements with different polarization states of incident light, each measurement including illuminating the measurement site so as to illuminate one of the diffractive structures through the other. The diffraction properties of the measurement site are indicative of a lateral shift between the diffractive structures. The diffraction properties detected are analyzed for the different polarization states of the incident light to determine an existing lateral shift between the layers.

Abstract: A test structure is presented for use in metrology measurements of a sample pattern. The test structure comprises a main pattern, and one or more auxiliary patterns. The main pattern is formed by a plurality of main features extending along a first longitudinal axis and being spaced from one another along a second lateral axis. The one or more auxiliary patterns are formed by a plurality of auxiliary features associated with at least some of the main features such that a dimension of the auxiliary feature is in a predetermined relation with a dimension of the respective main feature. This provides that a change in a dimension of the auxiliary feature from a nominal value affects a change in non-zero order diffraction response from the test structure in a predetermined optical measurement scheme, and this change is indicative of a deviation in one or more parameters of the main pattern from nominal value thereof.

Abstract: A test structure is presented for use in metrology measurements of a sample pattern formed by periodicity of unit cells, each formed of pattern features arranged in a spaced-apart relationship along a pattern axis. The test structure comprises a test pattern, which is formed by a main pattern which includes main pattern features of one or more of the unit cells and has a symmetry plane, and a predetermined auxiliary pattern including at least two spaced apart auxiliary features located within at least some features of the main pattern, parameters of which are to be controlled during metrology measurements.

Abstract: A method and system are presented for use in inspection of via containing structures. According to this technique, measured data indicative of a spectral response of a via-containing region of a structure under measurements is processed, and, upon identifying a change in at least one parameter of the spectral response with respect to a spectral signature of the via-containing region, output data is generated indicative of a possible defect at an inner surface of the via.

Abstract: A method of controlling a manufacturing process, the method including the steps of a) providing a testing area with a periodic structure, where the periodic structure includes a series of sets of patterned features, b) illuminating the periodic structure with a light, thereby producing a non-zero order diffraction signal, c) collecting the diffraction signal to produce a test signature, d) matching the test signature with a reference signature, where the reference signature was previously produced by performing steps a), b), and c) with respect to a reference structure that is at least similar to the periodic structure, and e) controlling a manufacturing process using a control setting set associated with the matching reference signature.

Abstract: A measurement system for use in measuring parameters of a patterned sample is presented. The system comprises: a broadband light source; an optical system configured as an interferometric system; a detection unit; and a control unit. The interferometric system defines illumination and detection channels having a sample arm and a reference arm comprising a reference reflector, and is configured for inducing an optical path difference between the sample and reference arms; the detection unit comprises a configured and operable for detecting a combined light beam formed by a light beam reflected from said reflector and a light beam propagating from a sample's support, and generating measured data indicative of spectral interference pattern formed by at least two spectral interference signatures. The control unit is configured and operable for receiving the measured data and applying a model-based processing to the spectral interference pattern for determining one or more parameters of the pattern in the sample.

Abstract: A method and system are presented for use in controlling a process applied to a patterned structure having regions of different layered stacks. The method comprises: sequentially receiving measured data indicative of optical response of the structure being processed during a predetermined processing time, and generating a corresponding sequence of data pieces measured over time; and analyzing and processing the sequence of the data pieces and determining at least one main parameter of the structure.

Abstract: A control system and method are provided for use in managing optical measurements on target structures. The control system comprises: data input utility for receiving input data indicative of a size of a target structure to be measured and input data indicative of illumination and collection channels of an optical measurement system; data processing utility for analyzing the input data, and an interplay of Point Spread Functions (PSFs) of the illumination and collection channels, and determining data indicative of optimal tailoring of apertures to be used in the optical measurement system for optimizing ensquared energy for measurements on the given target structure, the optimal tailoring comprising at least one of the following: an optimal ratio between numerical apertures of the illumination and collection channels; and an optimal orientation offset of physical apertures in the illumination and collection channels.

Abstract: Alignment of layers during manufacture of a multi-layer sample is controlled by applying optical measurements to a measurement site in the sample. The measurement site includes two diffractive structures located one above the other in two different layers, respectively. The optical measurements include at least two measurements with different polarization states of incident light, each measurement including illuminating the measurement site so as to illuminate one of the diffractive structures through the other. The diffraction properties of the measurement site are indicative of a lateral shift between the diffractive structures. The diffraction properties detected are analyzed for the different polarization states of the incident light to determine an existing lateral shift between the layers.

Abstract: Apparatus for processing substrates according to a predetermined photolithography process includes a loading station in which the substrates are loaded, a coating station in which the substrates are coated with a photoresist material, an exposing station in which the photoresist coating is exposed to light through a mask having a predetermined pattern to produce a latent image of the mask on the photoresist coating, a developing station in which the latent image is developed, an unloading station in which the substrates are unloaded and a monitoring station for monitoring the substrates with respect to predetermined parameters of said photolithography process before reaching the unloading station.