Abstract: A switched capacitor circuit includes a capacitor and switches located on an input side and an output side of the capacitor. The switched capacitor circuit also includes an operational amplifier of a later stage which receives an output of the capacitor, wherein a current value of a current supplied to the operational amplifier is switched according to at least one open/closed state of at least one of the switches.

Abstract: A method includes the steps of emitting infrared light of a predetermined wavelength to an object, receiving infrared light of a predetermined wavelength different from the infrared light emitted from the object, and adjusting white balance of an image output from a camera at this time, thereby showing the incident infrared light as white. The method further includes the steps of emitting white visible light to the object from an RGB light source, receiving visible light emitted from the object, and adjusting the intensity of the RGB light source for each of R, G, and B, thereby adjusting white balance of a captured image.

Abstract: An ON resistance of a bidirectional switch with a trench gate structure composed of two MOS transistors sharing a common drain is reduced. A plurality of trenches is formed in an N type well layer. Then a P type body layer is formed in every other column of the N type well layer interposed between a pair of the trenches. A first N+ type source layer and a second N+ type source layer are formed alternately in each of a plurality of the P type body layers. A first gate electrode is formed in each of a pair of the trenches interposing the first N+ type source layer, and a second gate electrode is formed in each of a pair of the trenches interposing the second N+ type source layer.

Abstract: A conventional semiconductor device has a problem that a frame constituting a heat sink is expensive and the heat sink is highly likely to come off a resin package. A semiconductor device of the present invention reduces the frame price because a heat sink is formed by subjecting a frame with a uniform thickness to pressing or something similar. Furthermore, the heat sink is less likely to come off a resin package because step regions of the heat sink are pressed as connection regions to be connected to the other frame in which leads are arranged, and thereby, resin constituting the resin package goes around the step regions and reaches up to back surfaces of the respective step regions. Moreover, a structure which makes the heat sink much less likely to come off is realized because recessed portions are arranged in the step regions of the heat sink.

Abstract: A liquid-crystal-driving circuit includes: a plurality of resistors connected in series between a first and second potentials; one or more voltage follower circuits to impedance-convert one or more intermediate potentials between the first and second potentials, to be outputted, respectively, the intermediate potentials generated at one or more connection points between the resistors, respectively; a common-signal-output circuit to supply common signals to common electrodes of a liquid-crystal panel, respectively, the common signals each being at the first and second potentials, and the intermediate potentials; and a segment-signal-output circuit to supply segment signals to segment electrodes of the panel, respectively, the segment signals each being at the first and second potentials, and the intermediate potentials according to the common signals, the segment-signal output circuit to change the potentials of the segment signals in a ramp form, at least if the potentials of the segment signals are changed w

Abstract: In a CSP type semiconductor device, the invention prevents a second wiring from forming a protruding portion toward a dicing line at the time of forming the second wiring that is connected to the back surface of a first wiring formed near a side surface portion of a semiconductor die on the front surface and extends onto the back surface of the semiconductor die over a step portion in a window that is formed from the back surface side of the semiconductor die so as to expose the back surface of the first wiring. A glass substrate is bonded on a semiconductor substrate on which a first wiring is formed on the front surface near a dicing line with a resin as an adhesive being interposed therebetween. The semiconductor substrate is then etched from the back surface to form a window having inclined sidewalls with the dicing line as a center.

Abstract: Provided are a circuit board easy to process by laser and a manufacturing method thereof A circuit board of the present invention includes a substrate, an insulating layer covering an upper surface of the substrate, and a conductive pattern of a predetermined shape formed on an upper surface of the insulating layer. The insulating layer is made of a resin material highly filled with a filler made of silica. Further, a colorant made of an inorganic material is added to the resin material. Accordingly, when a laser is radiated onto the insulating layer in order to perform cutting and removing processing, the insulating layer is removed because the laser is absorbed by the colored resin material.

Abstract: In a circuit device of the present invention, the lower surface side of a circuit board is covered with a second resin encapsulant, and the upper surface side and the like of the circuit board are covered with a first resin encapsulant. Since heat dissipation to the outside of the circuit device is achieved mainly through the second resin encapsulant, a particle size of filler contained in the second resin encapsulant is made larger than a particle size of filler contained in the first resin encapsulant. Heat dissipation to the outside of the circuit device is greatly improved.

Abstract: In a circuit device of the present invention, the lower surface side of a circuit board and part of side surfaces thereof are covered with a second resin encapsulant, and the upper surface side and the like of the circuit board are covered with a first resin encapsulant. Since heat dissipation to the outside of the circuit device is achieved mainly through the second resin encapsulant, a particle size of filler contained in the second resin encapsulant is made larger than a particle size of filler contained in the first resin encapsulant. Heat dissipation to the outside of the circuit device is greatly improved.

Abstract: Provided is a method of manufacturing a circuit device in which a circuit element is resin-sealed with sealing resins formed integrally with each other. In the present invention, a resin sheet and a circuit board are housed in a cavity of a mold, and thereafter a first sealing resin formed of a tablet in melted form is injected into the cavity. At the time of injecting the first sealing resin, a second sealing resin formed of the resin sheet in melted form is not yet cured and is maintained in liquid form. Accordingly, the injected first sealing resin and the second sealing resin are mixed at the boundary therebetween, preventing the generation of a gap in the boundary portion and therefore preventing the deterioration of the moisture resistance and withstand voltage at the boundary portion.

Abstract: A noise removal circuit is provided having a first holding circuit (20) and a second holding circuit (22) which holds a value of an input signal (IN) at a plurality of different timings in synchronization with rising and falling of an internal clock signal (ICL) generated within a semiconductor device, and which removes noise of the input signal (IN) according to the held value.

Abstract: A bus driver having one or more feedback paths between a column amplifier and a pixel bus in an image sensor is described.

Abstract: A switching-control circuit, which causes a first transistor, having an input electrode to be applied with an input voltage and an output electrode connected to an inductor and a diode, to be turned on and kept on for a predetermined time period, includes: a comparison circuit to compare a feedback voltage corresponding to an output voltage with a reference voltage; a detecting circuit to detect a switching period of the first transistor; and a driving circuit to turn off a second transistor connected in parallel to the diode as well as turn on the first transistor to be kept on for the predetermined time period, and thereafter, turn off the first and second transistors, when the feedback voltage becomes lower than the reference voltage, and turn off the first transistor as well as turn on the second transistor, when the switching period becomes longer than a predetermined period.

Abstract: When a metal ribbon is ultrasonic-bonded, a peripheral area of an island and hanging pins provided in the periphery of the island need to be clamped by use of clampers of a bonder to prevent the island from being lifted up. However, if no sufficiently-wide peripheral area of the island can be secured or no hinging pins can be provided due to the miniaturization of the device, there arises a problem that the island cannot be clamped. A protrusion, which protrudes toward a lead and has the same height as an end portion of the lead, is provided to an edge of the island opposed to the lead. Accordingly, when the protrusion and the end portion of the lead are simultaneously pressed by the damper, it is possible to prevent the island from being lifted up even when no hanging pin or no clamp area around the island is provided.

Abstract: Whether there is a defect such as chipping of a die or separation of a resin in a wafer level package is electrically detected. A peripheral wiring is disposed along four peripheries of a semiconductor substrate outside a circuit region and pad electrodes P1-P8. The peripheral wiring is formed on the semiconductor substrate and is made of a metal layer that is the same layer as or an upper layer of a metal layer forming the pad electrodes P1-P8, or a polysilicon layer. A power supply electric potential Vcc is applied to a first end of the peripheral wiring, while a ground electric potential Vss is applied to a second end of the peripheral wiring through a resistor R2. A detection circuit is connected to a connecting node N1 between the peripheral wiring and the resistor R2, and is structured to generate an anomaly detection signal ERRFLG based on an electric potential at the connecting node N1.

Abstract: In a semiconductor device including a protection diode for preventing electrostatic breakdown employing a low capacitance protection diode, an occupation area of a Zener diode as a voltage limiting element is not needed on a front surface of a semiconductor substrate. A P+ type embedded diffusion layer is formed in a P+ type semiconductor substrate. This is then covered by a non-doped first epitaxial layer. A high resistivity N type second epitaxial layer is then formed on the first epitaxial layer. The second epitaxial layer is divided by a P+ isolation layer into a first protection diode forming region and a second protection diode forming region. An N+ type embedded layer extending from the front surface of the first epitaxial layer of the first protection diode forming region to the first epitaxial layer and the second epitaxial layer, and so on are then formed. A Zener diode is formed by a P+ type upward diffusion layer extending from the P+ type embedded diffusion layer and the N+ type embedded layer.

Abstract: A semiconductor device provided with: an island and an island which are separated from each other; leads which approach the islands at one end; a control element which is attached to the island and is connected to a lead through a thin metal wire; and a switching element which is attached to the island and is connected to the lead through a metal wire. Further, the thin metal wire and the thin metal wire are arranged so as to the intersect.

Abstract: A digital filter has a plurality of filters, wherein each filter performs coefficient multiplication and delay processing for an input signal and an output signal, obtains the output signal from the input signal, and includes a plurality of coefficient multipliers for multiplying a signal by a predetermined coefficient. The digital filter also includes a plurality of delay circuits for delaying a signal, and an adder for adding a plurality of signals. A first RAM stores a plurality of sets of coefficient data for a plurality of coefficient multipliers of the first filter and stores delay data for the delay circuit of the second filter. A second RAM stores a plurality of sets of coefficient data for a plurality of coefficient multipliers of the second filter and stores delay data for the delay circuit of the first filter.

Abstract: A semiconductor element (10) is secured to an island (7), and a plurality of through-holes (8) are formed in the portion of the island (7), which surrounds the area to which the semiconductor element (10) is secured. Further, the electrode pads of the semiconductor element (10) and leads (4) are electrically connected by copper wires (11). In this structure, the cost of materials is reduced by using the copper wires (11) in comparison with gold wires. Further, a part of a resin package (2) is embedded in through-holes (8), so that the island (7) can be easily supported within the resin package (2).

Abstract: A motor drive circuit includes: a digital filter configured to attenuate amplitude in a frequency band including a resonance frequency of an actuator in a target current signal, the target current signal being a digital signal indicative of a target value of a drive current, the drive current being supplied to a voice coil motor configured to drive the actuator; a digital-analog converter configured to convert an output signal of the digital filter into an analog signal, and output the converted analog signal as a current control signal; and a drive circuit configured to supply the drive current to the voice coil motor according to the current control signal.