Patents Assigned to Osram Opto Semiconductor GmbH
  • Patent number: 11616176
    Abstract: An optoelectronic component is disclosed. In an embodiment an optoelectronic component includes a housing body, an optical element and a rabbet comprising a shoulder and a cheek, wherein the rabbet is located on an upper side of the housing body, wherein the optical element is located in the rabbet such that a brim of the optical element rests on the shoulder of the rabbet, wherein the upper side of the housing body comprises a rectangular shape, and wherein the shoulder of the rabbet is located only at corners of the rabbet.
    Type: Grant
    Filed: April 10, 2018
    Date of Patent: March 28, 2023
    Assignee: OSRAM OPTO SEMICONDUCTORS GMBH
    Inventors: Mohd Fauzi Zainordin, Khairul Mohd Arshad, Sok Gek Beh, Jun Jun Lim
  • Patent number: 11610868
    Abstract: The invention relates to various aspects of a ?-LED or a ?-LED array for augmented reality or lighting applications, in particular in the automotive field. The ?-LED is characterized by particularly small dimensions in the range of a few ?m.
    Type: Grant
    Filed: September 30, 2020
    Date of Patent: March 21, 2023
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: Peter Brick, Jean-Jacques Drolet, Hubert Halbritter, Laura Kreiner, Thomas Schwarz, Julia Stolz
  • Publication number: 20230063982
    Abstract: The semiconductor laser diode includes a semiconductor layer sequence having an active zone. The semiconductor layer sequence has a shape of a generalized cylinder or a frustum, and a main axis of the semiconductor layer sequence is perpendicular to a main extension plane of the semiconductor layer sequence. The semiconductor layer sequence has a core region and an edge region directly adjacent to the core region. The main axis passes through the core region. The edge region borders the core region in directions perpendicular to the main axis. The semiconductor layer sequence has a larger refractive index in the core region than in the edge region.
    Type: Application
    Filed: January 12, 2021
    Publication date: March 2, 2023
    Applicant: OSRAM Opto Semiconductors GmbH
    Inventor: Jens Ebbecke
  • Patent number: 11594659
    Abstract: An optoelectronic component is specified comprising a semiconductor body comprising a first semiconductor layer sequence and a second semiconductor layer sequence which are arranged on top of one another in a stacking direction, wherein the first semiconductor layer sequence has a first active region, which generates electromagnetic primary radiation with a first peak wavelength the second semiconductor layer sequence comprises a second active region, which has a section configured to partially absorb electromagnetic primary radiation and to re-emit electromagnetic secondary radiation having a second peak wavelength, and the first peak wavelength is in a red wavelength range and the second peak wavelength is in an infrared wavelength range, or the first peak wavelength is smaller than the second peak wavelength by at most 100 nanometers.
    Type: Grant
    Filed: September 24, 2019
    Date of Patent: February 28, 2023
    Assignee: OSRAM OPTO SEMICONDUCTORS GMBH
    Inventors: Ivar Tångring, Stefan Heckelmann
  • Patent number: 11588076
    Abstract: A radiation-emitting optoelectronic component may include a semiconductor chip or a semiconductor laser which, in operation of the component, emits a primary radiation in the UV region or in the blue region of the electromagnetic spectrum. The optoelectronic component may further include a conversion element comprising a first phosphor configured to convert the primary radiation at least partly to a first secondary radiation having a peak wavelength in the green region of the electromagnetic spectrum between 475 nm and 500 nm inclusive. The first phosphor may be or include BaSi4Al3N9, SrSiAl2O3N2, BaSi2N2O2, ALi3XO4, M*(1?x*?y*?z*) Z*z*[A*a*B*b*C*c*D*d*E*e*N4-n*On*], and combinations thereof.
    Type: Grant
    Filed: April 17, 2018
    Date of Patent: February 21, 2023
    Assignee: OSRAM OPTO SEMICONDUCTORS GMBH
    Inventors: Ion Stoll, Alexander Baumgartner, Alexander Wilm
  • Patent number: 11584882
    Abstract: The present invention is directed to a wavelength converter comprising a non-luminescent substrate layer, at least one polysiloxane layer, wherein at least one of the polysiloxane layers comprises a phosphor material. Furthermore, the present invention is directed to a method for preparing a wavelength converter, a light emitting device and a method for preparing a light emitting device.
    Type: Grant
    Filed: February 14, 2020
    Date of Patent: February 21, 2023
    Assignee: OSRAM OPTO SEMICONDUCTORS GMBH
    Inventors: Alan Piquette, Maxim N. Tchoul, David W. Johnston, Gertrud Kraeuter
  • Publication number: 20230049186
    Abstract: In an embodiment an optical component includes an optical body at least partially translucent to visible light and a coating directly arranged at the optical body, wherein the coating has a reflection coefficient of at least 0.8 for at least one wavelength range in a range from 380 nm to 1500 nm and an average thickness between 10 ?m and 200 ?m inclusive, wherein the coating has a polysiloxane as base material, and wherein the polysiloxane comprises —SiO3/2 units.
    Type: Application
    Filed: December 14, 2020
    Publication date: February 16, 2023
    Applicant: OSRAM Opto Semiconductors GmbH
    Inventors: Jens Eberhard, Andreas Hanisch, Norwin von Malm
  • Patent number: 11568779
    Abstract: A method for operating a visual display apparatus is specified. The apparatus comprises a first optoelectronic semiconductor component configured to emit electromagnetic radiation of a first wavelength and comprising a first intrinsic switch-on delay. The apparatus comprises a second optoelectronic semiconductor component configured to emit electromagnetic radiation of a second wavelength and comprising a second intrinsic switch-on delay. The second wavelength is different from the first wavelength. The first semiconductor component is operated with a first operating current according to a first actuation signal. The second semiconductor component is operated with a second operating current according to a second actuation signal.
    Type: Grant
    Filed: February 25, 2020
    Date of Patent: January 31, 2023
    Assignee: OSRAM OPTO SEMICONDUCTORS GMBH
    Inventors: Daniel Richter, Sven Weber-Rabsilber, Marcel Severin
  • Patent number: 11569421
    Abstract: A semiconductor structure, a method for producing a semiconductor structure and a light emitting device are disclosed. In an embodiment a semiconductor structure includes a plurality of discrete encapsulated semiconductor nanoparticles and a plurality of discrete semiconductor free nanoparticles, wherein the discrete encapsulated semiconductor nanoparticles and the discrete semiconductor free nanoparticles form an agglomerate.
    Type: Grant
    Filed: March 6, 2019
    Date of Patent: January 31, 2023
    Assignee: OSRAM OPTO SEMICONDUCTORS GMBH
    Inventors: James Wyckoff, Joseph Treadway, Kari N. Haley
  • Patent number: 11563153
    Abstract: An optoelectronic device includes a substrate, an optoelectronic semiconductor component being arranged on the substrate and having a light-emitting surface, preferably on the upper side of the optoelectronic semiconductor component, and a cover being arranged on the substrate for covering the optoelectronic semiconductor component, the cover providing a cavity which surrounds the optoelectronic semiconductor component when the cover is arranged on the substrate, the cover having at least one channel which extends along a first direction in the cover from the outside to the cavity, and the first direction being not parallel to the substrate and preferably extending at least approximately perpendicular to the substrate.
    Type: Grant
    Filed: May 14, 2018
    Date of Patent: January 24, 2023
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: Chai Liang Loke, Purusothaman Supramaniam, Vengadasalam Yogenthra, Luruthudass Annaniah
  • Patent number: 11557686
    Abstract: A quantum dot structure, a radiation conversion element and a light emitting device are disclosed. In an embodiment a quantum dot structure includes an active region configured to emit radiation, a barrier region surrounding the active region and a trap region spaced apart from the active region, wherein a band edge of the trap region forms a trap configuration with respect to the barrier region for at least one type of charge carrier.
    Type: Grant
    Filed: August 26, 2019
    Date of Patent: January 17, 2023
    Assignee: OSRAM OPTO SEMICONDUCTORS GMBH
    Inventors: David O'Brien, Joseph Treadway
  • Patent number: 11552228
    Abstract: An optoelectronic component and a method for producing an optoelectronic component are disclosed. In an embodiment an optoelectronic component includes a semiconductor chip including a plurality of pixels, each pixel configured to emit electromagnetic primary radiation from a radiation exit surface and conversion layers located on at least a part of the radiation exit surfaces, wherein the conversion layers comprise a crosslinked matrix having a three-dimensional siloxane-based network and at least one phosphor embedded in the matrix, and wherein the conversion layers have a thickness of ?30 ?m.
    Type: Grant
    Filed: August 17, 2018
    Date of Patent: January 10, 2023
    Assignee: OSRAM OPTO SEMICONDUCTORS GMBH
    Inventors: Alan Piquette, Maxim N. Tchoul, Darshan Kundaliya, Adam Scotch, Gertrud Kräuter
  • Patent number: 11552221
    Abstract: An optoelectronic component and a method for manufacturing an optoelectronic component are disclosed. In an embodiment an optoelectronic component includes a diffractive optical element comprising at least one conversion material and a light source configured to emit primary radiation, wherein the conversion material is encapsulated in the diffractive optical element, and wherein the conversion material is arranged in a beam path of the primary radiation and is configured to convert the primary radiation at least partially into secondary radiation.
    Type: Grant
    Filed: April 19, 2018
    Date of Patent: January 10, 2023
    Assignee: OSRAM OPTO SEMICONDUCTORS GMBH
    Inventors: Britta Göötz, Hubert Halbritter
  • Patent number: 11552226
    Abstract: An optoelectronic device and a method for producing an optoelectronic device are disclosed. In an embodiment a method includes arranging an optoelectronic semiconductor chip with its top side towards a surface of a carrier, forming a recess at the surface of the carrier such that the recess surrounds the optoelectronic semiconductor chip, arranging a mold compound in the recess and above the surface of the carrier such that the optoelectronic semiconductor chip is embedded into the mold compound, wherein a bottom side of the optoelectronic semiconductor chip remains at least partially not covered by the mold compound, removing the carrier and arranging a wavelength-converting material above the surface of the carrier before arranging the optoelectronic semiconductor chip, wherein the wavelength-converting material is perforated while forming the recess.
    Type: Grant
    Filed: March 23, 2018
    Date of Patent: January 10, 2023
    Assignee: OSRAM OPTO SEMICONDUCTORS GMBH
    Inventors: Chui Wai Chong, Seong Tak Koay, Geok Ling Adelene Ng, Teng Hai Ocean Chuah
  • Patent number: 11538852
    Abstract: The invention relates to various aspects of a ?-LED or a ?-LED array for augmented reality or lighting applications, in particular in the automotive field. The ?-LED is characterized by particularly small dimensions in the range of a few ?m.
    Type: Grant
    Filed: September 30, 2020
    Date of Patent: December 27, 2022
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: Tansen Varghese, Bruno Jentzsch, Laura Kreiner
  • Publication number: 20220393062
    Abstract: In an embodiment an optoelectronic semiconductor chip includes a semiconductor layer sequence including a first semiconductor region of a first conductivity type, an active zone having a multiple quantum well structure composed of a plurality of quantum well layers and barrier layers, a second semiconductor region of a second conductivity type and a plurality of channels extending through the active zone, wherein the second semiconductor region is located in the channels and is configured for lateral current injection into the active zone, wherein the channels have a first aperture half-angle in the first semiconductor region and a second aperture half-angle in the active zone, and wherein the second aperture half-angle is greater than zero and less than the first aperture half-angle.
    Type: Application
    Filed: October 6, 2020
    Publication date: December 8, 2022
    Applicants: OSRAM Opto Semiconductors GmbH, OSRAM Opto Semiconductors GmbH
    Inventors: Xiaojun Chen, Heng Wang, Jong Ho Na, Alvaro Gomez-Iglesias, Jürgen Off, Philipp Drechsel, Thomas Lehnhardt
  • Patent number: 11515454
    Abstract: The invention relates to a method for producing a conversion element for an optoelectronic component comprising the steps of: A) Producing a first layer, for that purpose: A1) Providing a polysiloxane precursor material, which is liquid, A2) Mixing a phosphor to the polysiloxane precursor material, wherein the phosphor is suitable for conversion of radiation, A3) Curing the arrangement produced under step A2) to produce a first layer having a phosphor mixed in a cured polysiloxane material, which comprises a three-dimensional crosslinking network based primarily on T-units, where the ratio of T-units to all units is greater than 80%, B) Producing a phosphor-free second layer, for that purpose: B1) Providing the polysiloxane precursor material, which is liquid, B2) Mixing a filler to the polysiloxane precursor material, wherein the filler is in a cured and powdered form, wherein the filler has a refractive index, which is equal to the refractive index of the cured polysiloxane material, B3) Curing the arrangem
    Type: Grant
    Filed: June 23, 2020
    Date of Patent: November 29, 2022
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: Alan Piquette, Adam Scotch, Maxim N. Tchoul, Gertrud Kraeuter
  • Patent number: 11513275
    Abstract: The invention relates to various aspects of a ?-LED or a ?-LED array for augmented reality or lighting applications, in particular in the automotive field. The ?-LED is characterized by particularly small dimensions in the range of a few ?m.
    Type: Grant
    Filed: September 14, 2021
    Date of Patent: November 29, 2022
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: Peter Brick, Jean-Jacques Drolet, Hubert Halbritter, Laura Kreiner, Thomas Schwarz, Tilman Ruegheimer, Frank Singer
  • Patent number: 11502224
    Abstract: A semiconductor body main include a III-V compound semiconductor material having a p-conductive region doped with a p-dopant. The p-conductive region may include at least one first section, one second section, and one third section. The second section may be arranged between the first and third sections. The second section may directly adjoin the first and third sections. An indium concentration of at least one of the sections differs from an indium concentration of the other two sections.
    Type: Grant
    Filed: June 14, 2018
    Date of Patent: November 15, 2022
    Assignee: OSRAM OPTO SEMICONDUCTORS GMBH
    Inventors: Ingrid Koslow, Massimo Drago, Joachim Hertkorn, Alexander Frey
  • Patent number: 11502228
    Abstract: A method of producing an optoelectronic semiconductor device includes providing a frame part including a plurality of openings, providing an auxiliary carrier, connecting the auxiliary carrier to the frame part such that the auxiliary carrier covers at least some of the openings at an underside of the frame part, placing conversion elements onto the auxiliary carrier in at least some of the openings, placing optoelectronic semiconductor chips onto the conversion elements in at least some of the openings, applying a housing onto the conversion elements and around the semiconductor chips in at least some of the openings, and removing the frame part and the auxiliary carrier wherein a bottom surface of at least some of the optoelectronic semiconductor chips remains free of the housing.
    Type: Grant
    Filed: August 4, 2017
    Date of Patent: November 15, 2022
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: Seng-Teong Chang, Choon Keat Or, Lee-Ying Jacqueline Ng, Chai-Yun Jade Looi