Abstract: A red-emitting phosphor comprising an Eu2+ doped nitridoaluminate phosphor is provided. The red emitting phosphor comprises an emission maximum in the range of 610 to 640 nm of the electromagnetic spectrum.

Abstract: An optoelectronic semiconductor device and a method for forming an optoelectronic semiconductor device are disclosed. In an embodiment a device includes a carrier having a main plane of extension, at least one semiconductor chip arranged on the carrier, a frame arranged on the carrier and surrounding the semiconductor chip in lateral directions which are parallel to the main plane of extension of the carrier and a conversion layer covering the at least one semiconductor chip and the frame, wherein the at least one semiconductor chip extends further in a vertical direction than the frame, wherein the semiconductor chip is configured to emit electromagnetic radiation, and wherein the frame and the semiconductor chip are spaced from each other in the lateral directions by a gap.

Abstract: In an embodiment a sensor device includes a first optoelectronic emitter configured to irradiate a spot with electromagnetic rays, a second optoelectronic emitter configured to irradiate the spot with electromagnetic rays, a detector configured to detect electromagnetic rays from the first and second emitters reflected at or transmitted through the spot, wherein the electromagnetic rays of the first emitter have a wavelength in a range of 1400-1500 nm, wherein the electromagnetic rays of the second emitter have a wavelength in a range of 900-1100 nm, and wherein the second emitter is configured to emit at least one further electromagnetic signal, the one further electromagnetic signal not being used for measuring a humidity.

Abstract: A semiconductor component may include a semiconductor body having a first semiconductor layer and a second semiconductor layer, a first main face and a second main face, opposite from the first main face, the first main face being formed by a surface of the first semiconductor layer and the second main face being formed by a surface of the second semiconductor layer. At least one side face may join the first main face to the second main face, an electrically conducting carrier layer, which covers the second main face at least in certain regions and extends from the second main face to at least one side face of the semiconductor body. An electrically conducting continuous deformation layer may cover the second main face at least in certain regions. The electrically conducting deformation layer may have an elasticity that is identical to or higher than the electrically conducting carrier layer.

Abstract: In an embodiment an optoelectronic component includes a carrier with a mounting area, an optoelectronic semiconductor chip, a dielectric protective layer and a dielectric encapsulation, wherein the protective layer is directly located at the mounting area in a chip mounting region, wherein the semiconductor chip is located at the protective layer in the chip mounting region and is electrically conductively connected with the carrier, wherein the encapsulation is directly located at the mounting area in a region adjacent to the chip mounting region and is directly located at the protective layer in an overlap region, and wherein the encapsulation is arranged exclusively in the region adjacent to the semiconductor chip.

Abstract: An optical display device includes a plurality of emitters configured to emit electromagnetic radiation in a main emission direction and at least one optical modulation unit which has an adjustable focal length. The emitters are arranged in a main plane and are separately controllable from one another. The optical modulation unit is arranged downstream of the emitters in the main emission direction. Images of the emitters are generated by means of the optical modulation unit, the images of the emitters each having a distance from the main plane which can be predetermined by means of the adjustable focal length. Methods of operating an optical display device are also disclosed.

Abstract: The invention relates to a light emitting device comprising: a support, at least two light-emitting elements at a top side of the support, first connection locations and a single second connection location at a bottom side of the support, wherein each light-emitting element comprises a first contact location and a second contact location at a side facing away from the support, each first contact location is connected to one of the first connection locations via a first connection, all of the second contact locations are connected to the second connection location via a second connection, the first connections run along an outer surface of the support, and the second connection runs through the support.

Abstract: A structure may include a quantum structure and a barrier layer that may coat the quantum structure. The barrier layer may include aluminum and at least one material that is X1, X2, Si, O, or combinations thereof where X1 and X2 are monovalent positively charged elements and/or divalent positively charged elements. In addition, an agglomerate, a conversion element, and a method of producing a structure are disclosed.

Abstract: An optoelectronic device, in particular a display device, comprises: at least one optoelectronic light source, an at least partially transparent front layer, an at least partially transparent support layer, wherein the light source is arranged between the front layer and the support layer, wherein a front side of the light source faces the front layer and a rear side of the light source faces the support layer, and wherein a limiting device is provided in a circumferential direction around the light source, wherein the limiting device limits a spatial region, in which the light source emits light such that total internal reflection of the emitted light, in particular at an interface between the front layer and the outside, is avoided or at least reduced.

Abstract: In one embodiment, the light-emitting diode module comprises a carrier and a plurality of light-emitting diodes. Thereby, several types of light-emitting diodes are present. The light-emitting diodes can be controlled individually or in groups electrically independently of one another. The light-emitting diodes each comprise a first and a second electrical contact. The carrier comprises several electrically conductive main layers, between each of which there is an electrically insulating intermediate layer. The contacts of the light-emitting diodes are attached to a carrier upper side on one of the first main layers. Starting from the first contacts, electrical through-connections are each connected directly to a carrier underside with a last main layer of the main layers. Starting from the second contacts, electrical through-connection each terminate at a penultimate main layer of the main layers, wherein the penultimate main layer is located inside the carrier.

Abstract: In an embodiment a method for producing a semiconductor device includes providing a carrier with a semiconductor component arranged on the carrier, providing a layer arrangement on the carrier, the layer arrangement adjoining the semiconductor component and comprising a first and a second flowable layer, wherein the first layer is formed on the carrier and then the second layer is formed on the first layer, wherein the first layer comprises particles, wherein a density of the first layer is greater than a density of the second layer, and wherein a lateral wetting of the semiconductor component with the first layer occurs such that the first layer comprises a first configuration comprising a curved layer surface laterally with respect to the semiconductor component, and centrifuging the carrier such that the first layer comprises a second configuration as a result, wherein the first layer cannot return to the first configuration since the second layer is arranged on the first layer.

Abstract: The invention relates to a lighting device comprising a pixelated light emitting semiconductor chip (pixelated with pixels), an electronic semiconductor chip for actuating the pixelated light emitting semiconductor chip, and a substrate. The pixelated light emitting semiconductor chip and the electronic semiconductor chip are placed next to one another on the substrate. The invention further relates to a process for manufacturing a lighting device.

Abstract: A semiconductor component and an illumination device is disclosed. In an embodiment the semiconductor component includes a semiconductor chip configured to generate a primary radiation having a first peak wavelength and a radiation conversion element arranged on the semiconductor chip. The radiation conversion element includes a quantum structure that converts the primary radiation at least partly into secondary radiation having a second peak wavelength and a substrate that is transmissive to the primary radiation.

Abstract: A method for operating an optoelectronic semiconductor device. The semiconductor device includes a first optoelectronic semiconductor chip for generating, for example, blue light, an optional second optoelectronic semiconductor chip for generating, for example, green light, and a third optoelectronic semiconductor chip for generating, for example, red light. The semiconductor device also includes a driver unit which supplies the semiconductor chips with current during operation. The third semiconductor chip is operated on the basis of a temperature-brightness characteristic curve stored in the driver unit. The temperature-brightness characteristic curve is configured for a minimum color location deviation over an intended operating temperature range, relative to at least one reference color location.

Abstract: A device for processing a multiplicity of semiconductor chips in a wafer assemblage includes an electrically conductive carrier for contacting rear contacts of the semiconductor chips, an electrically conductive film for contacting front contacts of the semiconductor chips that are situated opposite the rear contacts, and a squeegee, which is displaceable relative to the film and is configured to press a region of the film in the direction toward the carrier.

Abstract: The invention refers to a light emitting device including a semiconductor chip having a main radiation surface, which emits UV light in operation, a phosphor, which is arranged in the radiation beam of the UV light, absorbs partially the UV light, wherein the phosphor converts the UV light into visible light so that the device emits mixed light comprising the UV light as well as visible light.

Abstract: An optoelectronic module comprising at least one semiconductor laser and a photonic chip is described herein. The semiconductor laser emits a primary electromagnetic radiation which is coupled into the photonic chip. The photonic chip comprises at least one first waveguide and at least one optical Bragg reflector having a reflectivity which is modulated by an electrical modulation signal. A secondary electromagnetic radiation is coupled out of the photonic chip by means of at least one second waveguide, wherein the secondary electromagnetic radiation has a dominant wavelength which is modulated in dependence of the electrical modulation signal. Further, a method for operating an optoelectronic module and a Head-Mounted Display comprising an optoelectronic module are provided.

Abstract: An optoelectronic device and a method of producing an optoelectronic device are disclosed. In an embodiment an optoelectronic device includes components including an active layer stack, a housing and electrical contacts and at least one protective layer on a surface of at least one of the components, wherein the at least one protective layer includes a cross-linked material with a three-dimensional polysiloxane-based network.

Abstract: An optoelectronic device comprises a phosphor plate, an optoelectronic chip comprising a layer stack of a first optoelectronic semiconductor layer and a second optoelectronic semiconductor layer, a first electrode, and a second electrode. The optoelectronic chip is attached to the phosphor plate, so that the second optoelectronic semiconductor layer is arranged between the phosphor plate and the first optoelectronic semiconductor layer. The first electrode and the second electrode are arranged on a first main surface of the first optoelectronic semiconductor layer on a side remote from the phosphor plate. The second electrode directly contacts the first optoelectronic semiconductor layer.

Abstract: A method of producing a chip module includes providing a carrier; arranging semiconductor chips on the carrier; applying an electrically insulating material on the carrier; and structuring the carrier such that the chip module is provided, wherein the chip module includes separate carrier sections produced by structuring the carrier, the carrier sections of the chip module connected by the electrically insulating material.