Abstract: A III-nitride structure comprising a light emitting layer disposed between an n-type region and a p-type region is grown on a silicon substrate. The III-nitride structure is attached to a host, then a portion of the silicon substrate is etched away to reveal a top surface of the III-nitride structure. In some embodiments, the silicon substrate is etched to form an enclosure on the top surface of the III-nitride structure. A wavelength converting material such as phosphor may be disposed in the enclosure.

Abstract: A device structure includes a III-nitride wurtzite semiconductor light emitting region disposed between a p-type region and an n-type region. A bonded interface is disposed between two surfaces, one of the surfaces being a surface of the device structure. The bonded interface facilitates an orientation of the wurtzite c-axis in the light emitting region that confines carriers in the light emitting region, potentially increasing efficiency at high current density.

Abstract: A semiconductor surface emitting optical amplifier chip utilizes a zigzag optical path within an optical amplifier chip. The zigzag optical path couples two or more gain elements. Each individual gain element has a circular aperture and includes a gain region and at least one distributed Bragg reflector. In one implementation the optical amplifier chip includes at least two gain elements that are spaced apart and have a fill factor no greater than 0.5. As a result the total optical gain may be increased. The optical amplifier chip may be operated as a superluminescent LED. Alternately, the optical amplifier chip may be used with external optical elements to form an extended cavity laser. Individual gain elements may be operated in a reverse biased mode to support gain-switching or mode-locking.

Abstract: A mount for a semiconductor device includes a carrier, at least two metal leads disposed on a bottom surface of the carrier, and a cavity extending through a thickness of the carrier to expose a portion of the top surfaces of the metal leads. A semiconductor light emitting device is positioned in the cavity and is electrically and physically connected to the metal leads. The carrier may be, for example, silicon, and the leads may be multilayer structures, for example a thin gold layer connected to a thick copper layer.

Abstract: In one embodiment, sub-micron size granules of TiO2, ZrO2, or other white colored non-phosphor inert granules are mixed with a silicone encapsulant and applied over an LED. In one experiment, the granules increased the light output of a GaN LED more than 5% when the inert material was between about 2.5-5% by weight of the encapsulant. Generally, a percentage of the inert material greater than 5% begins to reduce the light output. If the LED has a yellowish YAG phosphor coating, the white granules in the encapsulant make the LED appear whiter when the LED is in an off state, which is a more pleasing color when the LED is used as a white light flash in small cameras. The addition of the granules also reduces the variation of color temperature over the view angle and position over the LED, which is important for a camera flash and projection applications.

Abstract: Described is a process for forming an LED structure using a laser lift-off process to remove the growth substrate (e.g., sapphire) after the LED die is bonded to a submount. The underside of the LED die has formed on it anode and cathode electrodes that are substantially in the same plane, where the electrodes cover at least 85% of the back surface of the LED structure. The submount has a corresponding layout of anode and cathode electrodes substantially in the same plane. The LED die electrodes and submount electrodes are ultrasonically welded together such that virtually the entire surface of the LED die is supported by the electrodes and submount. Other bonding techniques may also be used. No underfill is used. The growth substrate, forming the top of the LED structure, is then removed from the LED layers using a laser lift-off process.

Abstract: A metal oxide varistor comprising one or more zinc oxide layers is formed integral to a ceramic substrate to provide ESD protection of a semiconductor device mounted to the substrate. The portion of the ceramic substrate not forming the varistor may be aluminum oxide, aluminum nitride, silicon carbide, or boron nitride. The varistor portion may form any part of the ceramic substrate, including all of the ceramic substrate.

Abstract: Amber light LEDs have a higher luminance than red light LEDs. A vast majority of images displayed on television consists of colors that can be created using amber, green and blue components, with only a small percentage of red. In one embodiment of the present invention, the typically red primary light source in a projection display system is augmented with an amber light source. Green and blue primary light sources are also provided. All the light sources are high power LEDs. The particular mixture of the red and amber light is accomplished by varying the duty cycles of the red LEDs and the amber LEDs. If the RGB image to be displayed can be created using a higher percentage of amber light and a lower percentage of red light, the duty cycle of the amber LEDs is increased while the duty cycle of the red LEDs is decreased. Light/pixel modulators for creating the full color image from the three primary light sources are controlled to compensate for the variable amber/red mixture.

Abstract: A semiconductor light emitting device package includes a substrate with a core and a copper layer overlying the core. The light emitting device is connected to the substrate directly or indirectly through a wiring substrate. The core of the substrate may be, for example, ceramic, Al2O3, AlN, alumina, silicon nitride, or a printed circuit board. The copper layer may be bonded to the core by a process such as direct bonding of copper or active metal brazing.

Abstract: A device includes a light emitting structure and a wavelength conversion member comprising a semiconductor. The light emitting structure is bonded to the wavelength conversion member. In some embodiments, the light emitting structure is bonded to the wavelength conversion member with an inorganic bonding material. In some embodiments, the light emitting structure is bonded to the wavelength conversion member with a bonding material having an index of refraction greater than 1.5.

Abstract: Described is a process for forming an LED structure using a laser lift-off process to remove the growth substrate (e.g., sapphire) after the LED die is bonded to a submount. The underside of the LED die has formed on it anode and cathode electrodes that are substantially in the same plane, where the electrodes cover at least 85% of the back surface of the LED structure. The submount has a corresponding layout of anode and cathode electrodes substantially in the same plane. The LED die electrodes and submount electrodes are ultrasonically welded together such that virtually the entire surface of the LED die is supported by the electrodes and submount. Other bonding techniques may also be used. No underfill is used. The growth substrate, forming the top of the LED structure, is then removed from the LED layers using a laser lift-off process.

Abstract: A semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region is formed. A portion of the light emitting layer and the p-type region are removed to expose a portion of the n-type region. A first metal contact is formed on an exposed portion of the n-type region and a second metal contact is formed on a remaining portion of the p-type region. The first and second metal contacts are formed on a same side of the semiconductor structure. A dielectric material is disposed between the first and second metal contacts. The dielectric material is in direct contact with a portion of the semiconductor structure, a portion of the first metal contact, and a portion of the second metal contact. A surface of the device is then planarized by removing a portion of at least one of the first metal contact, the second metal contact, and the dielectric material.

Abstract: A process and apparatus for producing distinguishable light, in the presence of ambient light is disclosed. The process involves admitting light in a first wavelength band through a first light admission port into a first optical cavity at least partially defined by a first reflector operably configured to reflect light out of the first optical cavity. The process also involves filtering ambient light reflected into the first optical cavity and entering and exiting a first space defined about the first light admission port such that ambient light outside the first wavelength band is attenuated on entry and exit from the first space.

Abstract: A light emitting device includes a region of first conductivity type, a region of second conductivity type, an active region, and an electrode. The active region is disposed between the region of first conductivity type and the region of second conductivity type and the region of second conductivity type is disposed between the active region and the electrode. The active region has a total thickness less than or equal to about 0.25?n and has a portion located between about 0.6?n and 0.75?n from the electrode, where ?n is the wavelength of light emitted by the active region in the region of second conductivity type. In some embodiments, the active region includes a plurality of clusters, with a portion of a first cluster located between about 0.6?n and 0.75?n from the electrode and a portion of a second cluster located between about 1.2?n and 1.35?n from the electrode.

Abstract: A device is provided with an array of a plurality of phosphor converted light emitting devices (LEDs) that produce broad spectrum light. The phosphor converted LEDs may produce light with different correlated color temperature (CCT) and are covered with an optical element that assists in mixing the light from the LEDs to produce a desired correlated color temperature. The optical element may be bonded to the phosphor converted light emitting devices. The optical element may be a dome mounted over the phosphor converted light emitting devices and filled with an encapsulant.

Abstract: LED layers are grown over a sapphire substrate. Individual flip chip LEDs are formed by trenching or masked ion implantation. Modules containing a plurality of LEDs are diced and mounted on a submount wafer. A submount metal pattern or a metal pattern formed on the LEDs connects the LEDs in a module in series. The growth substrate is then removed, such as by laser lift-off. A semi-insulating layer is formed, prior to or after mounting, that mechanically connects the LEDs together. The semi-insulating layer may be formed by ion implantation of a layer between the substrate and the LED layers. PEC etching of the semi-insulating layer, exposed after substrate removal, may be performed by biasing the semi-insulating layer. The submount is then diced to create LED modules containing series-connected LEDs.

Abstract: A double-molded lens for an LED includes an outer lens molded around the periphery of an LED die and a collimating inner lens molded over the top surface of the LED die and partially defined by a central opening in the outer lens. The outer lens is formed using silicone having a relatively low index of refraction such as n=1.33-1.47, and the inner lens is formed of a higher index silicone, such as n=1.54-1.76, to cause TIR within the inner lens. Light not internally reflected by the inner lens is transmitted into the outer lens. The shape of the outer lens determines the side emission pattern of the light. The front and side emission patterns separately created by the two lenses may be tailored for a particular backlight or automotive application.

Abstract: Rectangular LED dice are mounted on a submount wafer. A first mold has rectangular indentations in it generally corresponding to the positions of the LED dice on the submount wafer. The indentations are filled with silicone, which when cured forms a clear first lens over each LED. Since the wafer is precisely aligned with the mold, the top surfaces of the first lenses are all within a single reference plane irrespective of any x, y, and z misalignments of the LEDs on the wafer. A second mold has rectangular indentations filled with a phosphor-infused silicone so as to form a precisely defined phosphor layer over the clear first lens, whose inner and outer surfaces are completely independent of any misalignments of the LEDs. A third mold forms an outer silicone lens. The resulting PC-LEDs have high chromaticity uniformity from PC-LED to PC LED within a submount wafer and from wafer to wafer, and high color uniformity over a wide viewing angle.

Abstract: An illumination device includes a light source, such as one or more light emitting diodes and a wavelength converting element that is mounted on an opaque support structure. The support structure includes an aperture with which the wavelength converting element is aligned so that the converted light is emitted through the aperture. The wavelength converting element may be a rigid structure, such as a luminescent ceramic and the aperture may be a hole through the support structure. The support structure may hold the wavelength converting element so that it is physically separated from the light source, or alternatively, the support structure may place the wavelength converting element in physical contact with the light source.

Abstract: An LED light source for LCD backlighting is described that recalibrates itself over time so that color and brightness uniformity across the backlight is maintained over the life of the backlight. The backlight contains clusters of red, green, and blue LEDs, each cluster generating a white point. In one embodiment, each color in a cluster has its own controllable driver so that the brightness of each color is a cluster is separately controllable. One or more optical sensors are arranged in the backlight, and the sensor signals are detected by processing circuitry to sense the light output of any LEDs that are energized in a single cluster. The measured white point and flux are compared to a stored target white point value and flux for that cluster. The currents to the RGB LEDs are then automatically adjusted to achieve the target level for each cluster. This process is applied to each cluster in sequence until the recalibration is complete.