Abstract: A medical stent, including a squeezable and expandable tubular wire mesh and an anti-sticking atomic layer deposition coating deposited on surfaces of the wire mesh. A method for manufacturing a medical stent, including taking a squeezable and expandable (i.e., deformable) tubular wire mesh, and depositing an anti-sticking atomic layer deposition coating on surfaces of the wire mesh to prevent the wire mesh from being stuck with itself when expanding from a squeezed form to a fully expanded form.

Abstract: A strain sensor that includes a first atomic layer deposition layer, a flexible molecular layer deposition layer on top of the first atomic layer deposition layer, and a second atomic layer deposition layer on top of the molecular layer deposition layer.

Abstract: A medical instrument, including an atomic layer deposition, ALD, coating to indicate the type of the medical instrument, and use of ALD to indicate number of re-uses of a medical instrument.

Abstract: A method that includes performing an atomic layer deposition sequence including at least one deposition cycle, each cycle producing a monolayer of deposited material, the deposition cycle including introducing at least a first precursor species and a second precursor species to a substrate surface in a reaction chamber, wherein both of said first and second precursor species are present in gas phase in said reaction chamber simultaneously.

Abstract: A deposition method, including providing a channel through a deposition apparatus, feeding precursor vapor into the channel, and depositing material from the precursor vapor onto a substrate on its way through the deposition apparatus by exposing the substrate to the precursor vapor and to alternating photon exposure and shade periods within the channel.

Abstract: A method for applying an anti-counterfeit signature on a product, and an anti-counterfeit signature. The method includes selecting a substrate and a type of signature and forming a signature of the selected type on the substrate with atomic layer deposition, ALD, wherein forming the signature includes applying at least one layer having a predetermined property configured to be detected with an analysis method on the substrate by atomic layer deposition, ALD.

Abstract: A deposition reactor includes an in-feed part that defines an expansion space which leads reactants as a top to bottom flow from a plasma source towards a reaction chamber, the expansion space widening towards the reaction chamber, and a lifting mechanism for loading at least one substrate to the reaction chamber from the top side of the reaction chamber. The deposition reactor deposits material on the at least one substrate in the reaction chamber by sequential self-saturating surface reactions.

Abstract: An apparatus and method for protecting an interior of a hollow body, where an inlet and exhaust manifold include a port assembly attachable to an opening of the hollow body is provided. The interior of the hollow body is exposed to sequential self-saturating surface reactions by sequential inlet of reactive gases via the port assembly and the opening into the interior of the hollow body, and excess gases is pumped via the opening and the port assembly out from the hollow body.

Abstract: An apparatus and method for loading a plurality of substrates into a substrate holder in a loading chamber of a deposition reactor to form a vertical stack of horizontally oriented substrates within said substrate holder, for turning the substrate holder to form a horizontal stack of vertically oriented substrates, and for lowering the substrate holder into a reaction chamber of the deposition reactor for deposition. The technical effects achieved are: a top loading system for a vertical flow deposition reactor in which the substrates can be loaded with horizontal orientation, eliminating the need for flipping each substrate separately by flipping the whole substrate holder and minimizing a loading distance in a reactor cluster.

Abstract: The invention relates to methods and apparatus in which precursor vapor is guided along at least one in-feed line into a reaction chamber of a deposition reactor, and material is deposited on surfaces of a batch of vertically placed substrates by establishing a vertical flow of precursor vapor in the reaction chamber and having it enter in a vertical direction in between said vertically placed substrates.

Abstract: The invention relates to methods and apparatus in which a plurality of ALD reactors are placed in a pattern in relation to each other, each ALD reactor being configured to receive a batch of substrates for ALD processing, and each ALD reactor comprising a reaction chamber accessible from the top. A plurality of loading sequences is performed with a loading robot. Each loading sequence comprises picking up a substrate holder carrying a batch of substrates in a storage area or shelf, and moving said substrate holder with said batch of substrates into the reaction chamber of the ALD reactor in question.

Abstract: The invention relates to method including operating a plasma atomic layer deposition reactor configured to deposit material in a reaction chamber on at least one substrate by sequential self-saturating surface reactions, and allowing gas from an inactive gas source to flow into a widening radical in-feed part opening towards the reaction chamber substantially during a whole deposition cycle. The invention also relates to a corresponding apparatus.

Abstract: An apparatus and method for protecting a target pump interior, where a target pump (10) inlet is provided with an inlet manifold (20) and a target pump outlet with an exhaust manifold (30). The target pump interior is exposed to sequential self-saturating surface reactions by sequential inlet of reactive gases according to an ALD method via the inlet manifold into the target pump interior and outlet of reaction residue via the exhaust manifold, while the target pump is kept running or not running. A technical effect of the invention is protecting a pump interior, which can be also an assembled pump interior, by a conformal protective coating.

Abstract: An apparatus and method for arranging a precursor vapor flow through a vertical atomic layer deposition (ALD) cartridge along a top-to-bottom vertical channel in a central area of the cartridge, and for moving particulate material to be ALD processed in the cartridge upwards, upon rotation, by a threaded area substantially extending from the vertical channel to a side wall of the cartridge, and downwards along the vertical channel to cause the particulate material to cycle during ALD processing.

Abstract: An apparatus and method for forming a substrate web track with a repeating pattern into a reaction space of a deposition reactor by moving a first set of support rolls in relation to a second set of support rolls.

Abstract: A method for applying an anti-counterfeit signature on a product, and an anti-counterfeit signature. The method includes selecting a substrate and a type of signature and forming a signature of the selected type on the substrate with atomic layer deposition, ALD, wherein forming the signature includes applying at least one layer having a predetermined property configured to be detected with an analysis method on the substrate by atomic layer deposition, ALD.

Abstract: An apparatus and method for protecting a target pump interior, where a target pump (10) inlet is provided with an inlet manifold (20) and a target pump outlet with an exhaust manifold (30). The target pump interior is exposed to sequential self-saturating surface reactions by sequential inlet of reactive gases according to an ALD method via the inlet manifold into the target pump interior and outlet of reaction residue via the exhaust manifold, while the target pump is kept running or not running. A technical effect of the invention is protecting a pump interior, which can be also an assembled pump interior, by a confomral protective coating.

Abstract: A method includes operating an atomic layer deposition reactor configured to deposit material on at least one substrate by sequential self-saturating surface reactions, and using dry air in the reactor as purge gas.

Abstract: An apparatus and method for loading a plurality of substrates into a substrate holder in a loading chamber of a deposition reactor to form a vertical stack of horizontally oriented substrates within said substrate holder, for turning the substrate holder to form a horizontal stack of vertically oriented substrates, and for lowering the substrate holder into a reaction chamber of the deposition reactor for deposition. The technical effects achieved are: a top loading system for a vertical flow deposition reactor in which the substrates can be loaded with horizontal orientation, eliminating the need for flipping each substrate separately by flipping the whole substrate holder and minimizing a loading distance in a reactor cluster.

Abstract: Disclosed is a bearing component having at least one layer having a high hardness and a high current insulation property, the layer comprising a nonconductive oxide layer selected from the group comprising an Al2O3 layer, a TaO layer, an SiO2 layer, a mixed layer comprising two or more of the foregoing oxides, a multilayer structure comprising alternating layers of two or more of the foregoing oxides and a DLC layer such as a ta-C layer, there being at least one ALD layer comprising at least one layer of a material deposited by an ALD (atomic layer deposition) process on the at least one layer having a high hardness and a high current insulation property, the ALD layer itself having a high current insulation property and comprising a material or layer structure selected from the said group of materials.