Abstract: A coated article of steel having at least one layer having a high hardness and a high resistance to wear applied by a deposition (e.g., PVD, a CVD, or PECVD) process, at least one surface region of said article and at least one ALD layer comprising at least one layer of a material deposited by an ALD (atomic layer deposition) process on said at least one layer, wherein the steel of which the article is made is a martensitic grade of steel, wherein the at least one layer, is a DLC layer, a metal-DLC layer, or a CrAlN layer and has a thickness in the range from 0.5 microns to 4 microns and a hardness in the range from 20 GPa to 100 GPa, and wherein the ALD layer has a thickness in the range from 1 nm to 100 nm.

Abstract: The invention relates to method including operating a plasma atomic layer deposition reactor configured to deposit material in a reaction chamber on at least one substrate by sequential self-saturating surface reactions, and allowing gas from an inactive gas source to flow into a widening radical in-feed part opening towards the reaction chamber substantially during a whole deposition cycle. The invention also relates to a corresponding apparatus.

Abstract: The present invention relates to a method of driving a substrate web (950) into a reaction space of an atomic layer deposition (ALD) reactor and apparatuses therefore. The invention includes driving a substrate web into a reaction space (930) of an atomic layer deposition reactor, and exposing the reaction space to precursor pulses to deposit material on said substrate web by sequential self-saturating surface reactions. One effect of the invention is a simpler structure compared to earlier spatial roll-to-roll ALD reactors. Another effect is that the thickness of deposited material is directly determined by the speed of the web.

Abstract: The present invention relates to a method of receiving and treating a moving substrate web (110) in a reaction space of an atomic layer deposition (ALD) reactor (100) and apparatuses therefore. It also pertains to a production line that includes such a reactor. The invention comprises receiving a moving substrate web into a reaction space (150) of an atomic layer deposition reactor, providing a track for the substrate web with a repeating pattern (140) in the reaction space and exposing the reaction space to precursor pulses to deposit material on the substrate web by sequential self-saturating surface reactions. The pattern is performed by turning the direction of propagation of the substrate web a plurality of times in the reaction space. One effect of the invention is adjusting an ALD reactor to a required production line substrate web speed.

Abstract: The invention relates to a method that includes providing a reaction chamber module of an atomic layer deposition reactor for processing a batch of substrates by an atomic layer deposition process, and loading the batch of substrates before processing into the reaction chamber module via a different route than the batch of substrates is unloaded after processing. The invention also relates to a corresponding apparatus.

Abstract: A method includes depositing material on a heated substrate in a deposition reactor by sequential self-saturating surface reactions, controlling feeding of precursor vapor from a precursor source to a reaction chamber including the reactor containing the substrate with a first pulsing valve embedded into the precursor source, and conveying inactive gas to a precursor cartridge attached to the precursor source to raise pressure of the precursor cartridge and to ease subsequent flow of a mixture of precursor vapor and inactive gas towards the reaction chamber.

Abstract: An apparatus, such as an ALD (Atomic Layer Deposition) apparatus, including a precursor source configured for depositing material on a heated substrate in a deposition reactor by sequential self-saturating surface reactions. The apparatus includes an in-feed line for feeding precursor vapor from the precursor source to a reaction chamber and a structure configured for utilizing heat from a reaction chamber heater for preventing condensation of precursor vapor into liquid or solid phase between the precursor source and the reaction chamber. Also various other apparatus and methods are presented.

Abstract: A deposition reactor includes an in-feed part that defines an expansion space which leads reactants as a top to bottom flow from a plasma source towards a reaction chamber, the expansion space widening towards the reaction chamber, and a lifting mechanism for loading at least one substrate to the reaction chamber from the top side of the reaction chamber. The deposition reactor deposits material on the at least one substrate in the reaction chamber by sequential self-saturating surface reactions.

Abstract: The invention relates to method including operating a plasma atomic layer deposition reactor configured to deposit material in a reaction chamber on at least one substrate by sequential self-saturating surface reactions, and allowing gas from an inactive gas source to flow into a widening radical in-feed part opening towards the reaction chamber substantially during a whole deposition cycle. The invention also relates to a corresponding apparatus.

Abstract: An apparatus, such as an ALD (Atomic Layer Deposition) apparatus, including a precursor source configured for depositing material on a heated substrate in a deposition reactor by sequential self-saturating surface reactions. The apparatus includes an in-feed line for feeding precursor vapor from the precursor source to a reaction chamber and a structure configured for utilizing heat from a reaction chamber heater for preventing condensation of precursor vapor into liquid or solid phase between the precursor source and the reaction chamber. Also various other apparatus and methods are presented.

Abstract: A coated article of steel having at least one layer having a high hardness and a high resistance to wear applied by a deposition (e.g., PVD, a CVD, or PECVD) process, at least one surface region of said article and at least one ALD layer comprising at least one layer of a material deposited by an ALD (atomic layer deposition) process on said at least one layer, wherein the steel of which the article is made is a martensitic grade of steel, wherein the at least one layer, is a DLC layer, a metal-DLC layer, or a CrAlN layer and has a thickness in the range from 0.5 microns to 4 microns and a hardness in the range from 20 GPa to 100 GPa, and wherein the ALD layer has a thickness in the range from 1 nm to 100 nm.

Abstract: Disclosed is a bearing component having at least one layer having a high hardness and a high current insulation property, the layer comprising a nonconductive oxide layer selected from the group comprising an Al2O3 layer, a TaO layer, an SiO2 layer, a mixed layer comprising two or more of the foregoing oxides, a multilayer structure comprising alternating layers of two or more of the foregoing oxides and a DLC layer such as a ta-C layer, there being at least one ALD layer comprising at least one layer of a material deposited by an ALD (atomic layer deposition) process on the at least one layer having a high hardness and a high current insulation property, the ALD layer itself having a high current insulation property and comprising a material or layer structure selected from the said group of materials.

Abstract: An apparatus, such as an ALD (Atomic Layer Deposition) apparatus, including a precursor source configured for depositing material on a heated substrate in a deposition reactor by sequential self-saturating surface reactions. The apparatus includes an in-feed line for feeding precursor vapor from the precursor source to a reaction chamber and a structure configured for utilizing heat from a reaction chamber heater for preventing condensation of precursor vapor into liquid or solid phase between the precursor source and the reaction chamber. Also various other apparatus and methods are presented.

Abstract: The invention relates to methods and apparatus in which a plurality of ALD reactors are placed in a pattern in relation to each other, each ALD reactor being configured to receive a batch of substrates for ALD processing, and each ALD reactor comprising a reaction chamber accessible from the top. A plurality of loading sequences is performed with a loading robot. Each loading sequence comprises picking up a substrate holder carrying a batch of substrates in a storage area or shelf, and moving said substrate holder with said batch of substrates into the reaction chamber of the ALD reactor in question.

Abstract: The invention relates to methods and apparatus in which a plurality of ALD reactors are placed in a pattern in relation to each other, each ALD reactor being configured to receive a batch of substrates for ALD processing, and each ALD reactor comprising a reaction chamber accessible from the top. A plurality of loading sequences is performed with a loading robot. Each loading sequence comprises picking up a substrate holder carrying a batch of substrates in a storage area or shelf, and moving said substrate holder with said batch of substrates into the reaction chamber of the ALD reactor in question.

Abstract: An apparatus for depositing conformal thin films by sequential self saturating chemical reactions on heated surfaces is disclosed. The apparatus comprises a movable single or dual-lid system that has a substrate holder attached to a reaction chamber lid. In other embodiments, the apparatus comprises an exhaust flow plug, a gas distribution insert, a local heater or a minibatch system. Various methods suitable for ALD (Atomic Layer Deposition) are also enclosed.