Abstract: A memory device includes a phase change memory cell and a circuit. The circuit is for programming the memory cell to a selected one of more than two states by applying a temperature controlled set pulse to the memory cell.

Abstract: A device or method for effectively stressing an interconnect in a current path of a semiconductor device. A bidirectional current is established across the current path, which stresses the interconnect therein.

Abstract: An integrated circuit having an optical switch includes an optical body configured to transmit light, the optical body having a boundary, and a thin film disposed at the boundary that is configured to selectively change a pseudo-Brewster angle of light reflected at the boundary.

Abstract: A memory cell includes a first electrode, a second electrode, storage material positioned between the first electrode and the second electrode, and a nanocomposite insulator contacting the storage material.

Abstract: A semiconductor device includes a first circuit block, a second circuit block, and a data bus. The data bus is coupled between the first and second circuit blocks. A first data inverter on the data bus inverts a selected segment of data that is transferred onto the data bus. A second data inverter at an end of the data bus re-inverts the selected segment of data before the data is transferred off the data bus. The data that is transferred onto the data is not analyzed in order to determine the selected segment of data that is inverted.

Abstract: A random access memory including multiple state machines and selection circuitry. The multiple state machines include a first state machine and a second state machine, and possibly more state machines. The first state machine is configured to provide first signals to control the random access memory and provide first command operations and the second state machine is configured to provide second signals to control the random access memory and provide second command operations. The selection circuitry selects one of the multiple state machines. The selection circuitry conducts the first signals to select the first state machine and provide the first command operations and the selection circuitry conducts the second signals to select the second state machine and provide the second command operations.

Abstract: A temperature control circuit, comprising: a plurality of temperature sensors each configured to measure a temperature of a corresponding memory chip chosen from a plurality of memory chips, and to generate a sensor output signal that is set to a first voltage if the measured temperature of the corresponding memory chip meets a temperature requirement, and is set to a floating voltage if the measured temperature of the corresponding memory chip does not meet the temperature requirement, the sensor output signal being connected to an intermediate node; a current source connected to the intermediate node; and a control circuit configured to provide chip control signals to the plurality of memory chips.

Abstract: Method and apparatus for testing for a short between a wordline being tested and a bitline in a memory device. The method includes applying a first voltage to the bitline using a first voltage source and applying a second voltage to the wordline being tested using a second voltage source. The method further includes disconnecting the wordline being tested from the second voltage source; and after disconnecting the wordline being tested from the second voltage source, activating the wordline being tested, thereby connecting the wordline being tested to a wordline power supply line. A determination is made of whether a voltage of the wordline power supply line indicates a short between the wordline being tested and the bitline. The determination is based on the voltage of the wordline power supply line relative to the first voltage and the second voltage.

Abstract: Embodiments of the invention provide a method, devices, and system for accessing data in a nonvolatile memory device via a volatile memory device. In one embodiment, the method includes configuring a size and a base address of an overlay window within an address space of the volatile memory device. The overlay window includes a range of memory addresses. The method also includes receiving an access command via a volatile memory interface of the volatile memory device and using the access command to access a memory array of the volatile memory device if an address of the access command is outside of the overlay window. The method further includes using the access command to access the nonvolatile memory device via a nonvolatile memory interface of the volatile memory device if the address of the access command is within the overlay window.

Abstract: In a method or apparatus such as an integrated circuit (IC) chip including a plurality of circuits for executing a plurality of testmodes, a testmode entry code specifying one of the plurality of testmodes and one of an unrestricted private testmode category and a restricted public testmode category is received. Execution of only a public testmode of the plurality of testmodes is enabled when the testmode entry code specifies the restricted public testmode category. Execution of all of the plurality of testmodes is enabled when the testmode entry code specifies the unrestricted private testmode category.

Abstract: A device or method for effectively stressing an interconnect in a test current path of a semiconductor device, which test current path is other than a current path used during normal operation of the semiconductor device. An operational voltage is adjusted to a test voltage, the test current path is opened and the test voltage is supplied to the test current path.

Abstract: A memory includes a circuit having a set terminal for receiving an input signal indicating a request to exit a power-down mode. The circuit is configured to provide an output signal to enable exiting the power-down mode in response to the input signal before the input signal is latched.

Abstract: A memory test circuit is provided, comprising: an output data selector configured to receive the plurality of read data bits and output a fraction of the plurality of read data bits as a plurality of fractional data bits; and a control circuit configured to select a set of bit positions in the plurality of read data bits whose corresponding values will form the plurality of fractional data bits, wherein the selected set of bit positions is selectable from a plurality of possible sets of bit positions, each actual bit position in the plurality of read data bits being contained in at least one of the possible sets of bit positions, and wherein a fractional length of the plurality of fractional data bits is smaller than a full length of the plurality of read data bits.

Abstract: Trim codes are determined for semiconductor devices under test (DUTs), wherein the trim codes correspond to voltage or current reference value adjustments that cause the DUTs to generate desired voltage or current reference values. The technique involves supplying respective trim codes simultaneously to the DUTs to cause them to generate trimmed analog voltage or current references, simultaneously feeding a test analog voltage or current reference having a preselected reference value to the DUTs, and for each DUT, comparing the value of the test analog reference to the values of the trimmed analog references to ascertain the crossing of the value of the test analog reference by the values of the trimmed references, whereby for each DUT the trim code corresponding to the value of the trimmed analog voltage or current reference immediately above or below the crossing is established as the preferred trim code to be used for that DUT.

Abstract: The present invention includes a memory device with a data memory and an error correction code control circuit. The data memory stores data parity information for error correction. The error correction code control circuit is configured to receive a selection signal indicative of whether an error correction mode is to be used. Power to access the portion of the memory storing the parity information is disabled when the error correction mode is enabled.

Abstract: A system and method for classifying failures of semiconductor integrated circuit dies using a unique input vector created from die level characterization data to classify wafer (process related) and die level (defect related) patterns. The failure classification may then be used to assign the appropriate yield loss by die. The classification results produced by the plurality of classifiers are examined with a preference towards assigning a wafer level failure classification to failure data for a die when any of the plurality of failure classification results indicates a presence of a wafer level failure.

Abstract: A method for manufacturing a mushroom-cell type phase change memory is based upon manufacturing a pillar of bottom electrode material upon a substrate including an array of conductive contacts in electrical communication with access circuitry. A layer of electrode material is deposited making reliable electrical contact with the array of conductive contacts. Electrode material is etched to form a pattern of electrode pillars on corresponding conductive contacts. Next, a dielectric material is deposited over the pattern and planarized to provide an electrode surface exposing top surfaces of the electrode pillars. Next, a layer of programmable resistive material, such as a chalcogenide or other phase change material, is deposited, followed by deposition of a layer of a top electrode material. A device including bottom electrode pillars with larger bottom surfaces than top surfaces is described.

Abstract: In a semiconductor memory which comprises a main memory array, redundant memory cells, and a plurality of repair fuse boxes, a method of selecting redundant memory cells in relation to repair fuse boxes, comprising testing redundant memory cells to determine whether they are valid or defective, and making a selection of redundant memory cells which allocates valid redundant memory cells to respective repair fuse boxes but which does not allocate defective redundant memory cells to any repair fuse boxes.

Abstract: A semiconductor integrated circuit device having a physical damage testing capability and a method for testing for physical damage caused during fabrication, assembly or test of the semiconductor integrated circuit are provided. A dedicated conductive test path is formed during fabrication of the integrated circuit device. The test path is routed to pass through areas of the integrated circuit which are susceptible to physical damage. A test circuit is included in the integrated circuit and is connected to the dedicated conductive test path. The test circuit tests the dedicated conductive test path for a characteristic indicative of physical damage. In one embodiment, the test circuit is a continuity circuit that measures whether there is continuity on the conductive test path. The continuity test circuit is activated in response to an externally supplied test command, such as from a test system, and to supply an output signal to a pad that is externally readable by the test system.

Abstract: Apparatus and methods for communicating command and address inputs to a memory device. In one embodiment, a memory device includes a shared bus interface defined by a portion of pins from a command bus interface and a portion of pins from an address bus interface. Each portion of pins is configured to receive address and command inputs, depending a given command/address combination being asserted by a memory controller.