Abstract: Provided are an etching gas and an etching method, which are capable of selectively etching an etching object having silicon nitride in comparison with a non-etching object. The etching gas contains nitrosyl fluoride and also contains nitryl fluoride as an impurity, in which the concentration of nitryl fluoride is 0.0001 ppm by mass or more and 100 ppm by mass or less. The etching method includes an etching step of bringing this etching gas into contact with a member to be etched (12) having an etching object, which is an object of etching by the etching gas, and a non-etching object, which is not an object to be etched by the etching gas, and selectively etching the etching object in comparison with the non-etching object. The etching object has silicon nitride.

Abstract: A method for manufacturing a wiring board according to the present disclosure includes: in the following order, (a) a step of irradiating an insulating layer composed of a resin composition with active energy rays; (b) a step of adsorbing an electroless plating catalyst to the insulating layer; and (c) a step of forming a metal layer on a surface of the insulating layer by electroless plating, in which in the step (a), a modified region having a thickness of 20 nm or more in a depth direction from the surface of the insulating layer and voids communicating from the surface of the insulating layer is formed by irradiation of the active energy rays.

Abstract: A magnetic sensor (1) includes: a nonmagnetic substrate (10); and a sensitive element (31) including a plurality of soft magnetic layers (105) (lower soft magnetic layer (105a) and upper soft magnetic layer (105b)) laminated on or above the substrate (10) and a conductor layer (106) laminated between the plurality of soft magnetic layers (105) and having higher conductivity than the plurality of soft magnetic layers (105). The sensitive element (31) has a longitudinal direction and a transverse direction and has uniaxial magnetic anisotropy in a direction intersecting the longitudinal direction. The sensitive element (31) is configured to sense a magnetic field by a magnetic impedance effect.

Abstract: A hydrogen fluoride gas removal device includes: a hydrogen fluoride gas removal treatment machine that is configured to perform a treatment of removing the hydrogen fluoride gas from the mixed gas by bringing the mixed gas into contact with a removal agent for removing the hydrogen fluoride gas from the mixed gas; a removal agent supply machine that is configured to supply the removal agent to the hydrogen fluoride gas removal treatment machine; a removal agent moving machine that is configured to move the removal agent, which is accommodated in the hydrogen fluoride gas removal treatment machine, within the hydrogen fluoride gas removal treatment machine; and a removal agent discharge machine that is configured to discharge the used removal agent from the hydrogen fluoride gas removal treatment machine.

Abstract: A dry etching method which includes a dry etching step in which an etching gas containing a halogen fluoride being a compound of bromine or iodine and fluorine is brought into contact with a member to be etched (12) including an etching target being a target of etching with the etching gas to etch the etching target without using plasma. The etching target contains copper. Additionally, the dry etching step is performed under temperature conditions of from 140° C. to 300° C. Also disclosed is a method for manufacturing a semiconductor element and a cleaning method using the dry etching method.

Abstract: An aspect according to the present invention provides an acrylic resin including a first structural unit represented by formula (1) and a second structural unit represented by formula (2): [in the formula (1), R1 represents a hydrogen atom or a methyl group, and R2 represents an alkyl group having 12-30 carbon atoms] [in the formula (2), R3 and R5 each independently represent a hydrogen atom or a methyl group, and R4 represents a divalent organic group].

Abstract: A cause-effect sentence analysis device including: a cause-effect sentence extraction unit configured to extract a cause-effect sentence including a cause expression and an effect expression from a text; an acquisition unit configured to acquire information indicating a reference expression for analyzing the degree of similarity; a similarity degree analysis unit, for a cause-effect sentence extracted by the cause-effect sentence extraction unit, configured to calculate a cause similarity degree, namely, the degree of similarity between the reference expression and the cause expression included in the cause-effect sentence, and an effect similarity degree, namely, the degree of similarity between the reference expression and the effect expression; and a desired cause-effect sentence extraction unit for extracting a cause-effect sentence in which one of the cause expression and the effect expression included in the cause-effect sentence is similar to the reference expression and the other is not similar to the

Abstract: A photosensitive element comprising a support film, a barrier layer, and a photosensitive layer in this order, wherein the barrier layer contains a water-soluble resin and an ultraviolet absorber.

Abstract: A SiC epitaxial wafer in which a SiC epitaxial layer is formed on a 4H-SiC single crystal substrate having an off angle and a substrate carbon inclusion density of 0.1 to 6.0 inclusions/cm2, wherein a total density of large pit defects and triangular defects caused by substrate carbon inclusions and contained in the SiC epitaxial layer is 0.01 defects/cm2 or more and 0.6 defects/cm2 or less. The large pit defect is a pit located on a surface at a position corresponding to a position of the carbon inclusion on the substrate surface, and a conversion rate from the substrate carbon inclusions to the large pit defects and the triangular defects caused by the substrate carbon inclusions is 20% or less. Also disclosed is a method for producing the SiC epitaxial wafer.

Abstract: A welding film includes a phenoxy resin, in which a z average molecular weight of the phenoxy resin is 70,000 or more, and a ratio [Mz/Mn] between the z average molecular weight and a number average molecular weight of the phenoxy resin is 5.0 or more.

Abstract: A positive electrode mixture layer for a lithium-ion secondary battery suitable for producing a lithium-ion secondary battery with high rate characteristics at an ordinary temperature and low temperatures and low internal resistance (DCR) at low temperatures, characterized by including a positive electrode active material, a binder, and a conductive additive, in which the conductive additive includes carbon black, a carbon nanotube (1) having an average fiber diameter of 80 to 400 nm, and a carbon nanotube (2) having an average fiber diameter of 0.4 to 3.0 nm, the content rates of the carbon black, the carbon nanotube (1), and the carbon nanotube (2) in the conductive additive are 40 to 80% by mass, 10 to 50% by mass, and 1 to 30% by mass, respectively, and the content rate of the conductive additive in the positive electrode mixed layer is 0.1 to 5.0% by mass.

Abstract: A magnetic sensor includes: at least one sensitive element including a soft magnetic material and having a longitudinal direction and a transverse direction and a uniaxial magnetic anisotropy in a direction intersecting the longitudinal direction, the at least one sensitive element being configured to sense a magnetic field by a magnetic impedance effect; at least one protruding portion including a soft magnetic material and protruding in the longitudinal direction from a longitudinal end of the at least one sensitive element; and a guiding member disposed opposite the at least one protruding portion and made of a soft magnetic material, the guiding member being configured to guide magnetic field lines toward the at least one protruding portion.

Abstract: According to the invention, a SiC single crystal growth crucible includes: a raw material accommodation portion which accommodates a SiC raw material; and a seed crystal support portion which supports a seed crystal disposed on an upper portion of the raw material accommodation portion, in which the raw material accommodation portion has a tapered portion, an inner surface of which is tapered off downward.

Abstract: A method for forming a pattern of metal oxide capable of selectively etching an etching object containing metal oxide relative to a non-etching object and forming a pattern of the metal oxide along a pattern of the non-etching object serving as a template. Metal oxide containing oxide of at least one of tin and indium is etched using an etching gas to form the pattern of the metal oxide. An etching gas containing halon is brought into contact with a member to be etched in the presence of plasma, and etching is performed while a bias power is applied to a lower electrode (2) supporting the member to be etched to selectively etch a metal oxide layer (22) relative to a silicon substrate (24), a template layer (21), and an underlying layer (23), and the predetermined pattern of the template layer (21) is transferred to the metal oxide layer (22).

Abstract: The present invention provides a fluorine-containing ether compound represented by the following Formula. R1-[B]-[A]-CH2—R2—CH2-[C]-[D]-R3 (R2 is a perfluoropolyether chain; [A] is Formula (2-1); [B] is Formula (2-2); [C] is Formula (3-1); [D] is Formula (3-2); R3 is Formula (4); and R1 is a terminal group.

Abstract: This optical cell for sedimentation analysis has a pair of opposing surfaces through which light is transmitted, and two polarizing plates, in which each of the two polarizing plates is disposed in a crossed Nicols state on each of the inner surfaces of the pair of opposing surfaces.

Abstract: A heat conducting composition containing a curable silicone resin (A) and 70 to 98% of a thermally conductive powder (B) containing 30 to 75% of aluminum nitride particles (B-1) having a 50% particle size of 50 to 150 ?m, 10 to 30% by mass of aluminum nitride particles (B-2) having a 50% particle size of 15 to less than 50 ?m, 5 to 15% of a metal oxide (B-3) other than zinc oxide having a 50% particle size of 1 to less than 20 ?m, and 10 to 40% of zinc oxide (B-4) having a 50% particle size of 0.1 to less than 1 ?m and a BET specific surface area of less than 9.0 m2/g. The metal oxide (B-3) and the zinc oxide (B-4) are both surface treated with a surface treatment agent selected from a silane coupling agent having an C10-C22 alkyl group and ?-butyl-?-(2-trimethoxysilylethyl)polydimethylsiloxane.

Abstract: The present invention relates to a laminate including two or more layers of a composite layer including a fiber substrate and a cured product of a thermosetting resin composition, the two or more layers of the composite layer including one or more layer of a composite layer (X) and one or more layer of a composite layer (Y), the composite layer (X) being a layer including a first fiber substrate constituted by first glass fibers, the composite layer (Y) being a layer including a second fiber substrate constituted by second glass fibers, and the second glass fibers having a higher tensile elastic modulus at 25° C. than the first glass fibers, a printed wiring board including the laminate, a semiconductor package, and a method for producing a laminate.

Abstract: A magnetic sensor circuit includes: a first element including series-connected resistor and capacitor, or including only a capacitor; a second element including series-connected resistor and inductor, or including a magnetic sensor sensing a magnetic field by a magnetic impedance effect; a third element including series-connected resistor and capacitor, or including only a capacitor; and a fourth element including a magnetic sensor sensing a magnetic field by a magnetic impedance effect, wherein a first series circuit part including the series-connected first and second elements and a second series circuit part including the series-connected third and fourth elements are connected in parallel, and, when the magnetic field sensed by the magnetic sensor has a predetermined reference value, a product of impedance Z1 of the first element and impedance Z4 of the fourth element and a product of impedance Z2 of the second element and impedance Z3 of the third element are equal.

Abstract: In the SiC substrate, when resistivities at a plurality of first measurement points that are in a region inside a boundary located 5 mm inward from an outer circumferential end thereof and that include a center and a plurality of measurement points separated by 10 mm from each other in the [11-20] direction or the [?1-120] direction from the center, and at two second measurement points that are located 1 mm inward from the outer circumferential end and located in each of the [11-20] direction from the center and the [?1-120] direction from the center are measured, a difference between the maximum resistivity and the minimum resistivity among the resistivities of each of the plurality of first measurement points and the two second measurement points is 2 m?·cm or less, and a region other than a high nitrogen concentration region called a facet is included.