Abstract: The present invention relates to a metal oxide powder for high precision polishing and prepartion thereof, comprising aggregates formed by cohesion of primary particles, which has a cohesive degree (?) of 1.1 to 2.0 and a cohesive scale (?) of 3 to 10, the cohesive degree (?) and the cohesive scale (?) being defined by formula (I) and formula (II), respectively: ?=6/(S×?×d(XRD)) ??(I) ?=weight average particle diameter/d(XRD) ??(II) wherein, S is the specific surface area of the powder; ?, the density; and d(XRD), the particle diameter of the powder determined by X-ray diffraction analysis. In accordance with the present invention, it is possible to provide a high polishing speed and reduce scratches.

Abstract: A composition for forming a low-dielectric constant film comprising a substituted fullerene, a low-dielectric constant film formed from the composition, and a method for forming the low-dielectric constant film are provided. The low-dielectric constant film has superior mechanical properties, such as hardness and elastic modulus, and excellent thermal conductivity.

Abstract: An apparatus for fabricating a GaN single crystal and a fabrication method for producing GaN single crystal ingot are provided. The apparatus includes: a reactor including a ceiling, a floor and a wall with a predetermined height encompassing an internal space between the ceiling and the floor, wherein the ceiling is opposite to the floor; a quartz vessel on the floor containing Ga metal; a mount installed on the ceiling on which a GaN substrate is mounted, the GaN substrate being opposite to the quartz vessel; a first gas supplying unit supplying the quartz vessel with hydrogen chloride (HCl) gas; a second gas supplying unit supplying the internal space of the reactor with ammonia (NH3) gas; and a heating unit installed in conjunction with the wall of the reactor for heating the internal space, wherein the lower portion of the internal space is heated to a higher temperature than the upper portion.

Abstract: Provided is an epitaxial growth method for forming a high-quality crystalline growth semiconductor wafer. The method includes forming a buffer layer on a single crystalline wafer using a single crystalline material; forming a mask layer on the buffer layer; forming a plurality of holes in the mask layer using a laser to expose portions of the buffer layer; forming wells having a predetermined depth in the exposed portions of the buffer layer by injecting an etchant into the holes; removing the mask layer and annealing the buffer layer to form a porous buffer layer having cavities obtained by the wells; and forming a crystalline material layer on the porous buffer layer using an epitaxial growth process.

Abstract: A composition for forming a low dielectric thin film, which includes a silane polymer, polymer nanoparticles, a porogen and an organic solvent, and a method of preparing a low dielectric thin film using the same. The low dielectric thin film prepared using the composition of this disclosure has a low dielectric constant and excellent mechanical strength. As well, the polymer nanoparticles in the low dielectric thin film have a uniform diameter and are soft, and thus are advantageously applied to a chemical-mechanical polishing process.

Abstract: An epitaxial growth method for forming a high-quality epitaxial growth semiconductor wafer is provided. The method includes forming a single crystalline layer on a single crystalline wafer; forming a mask layer having nano-sized dots on the single crystalline layer; forming a porous buffer layer having nano-sized pores by etching the mask layer and the surface of the single crystalline layer; annealing the porous buffer layer; and forming an epitaxial material layer on the porous buffer layer using an epitaxial growth process.

Abstract: A funnel for use in a cathode ray tube having a panel includes a body portion having a seal edge to be connected to the panel and having a major axis of two longer sides of the body portion, a minor axis of two shorter sides of the body portion and diagonal axes; a yoke portion extending backward from the body portion; and an inflection portion formed on at least one portion of an inner surface of the body portion at a predetermined distance from the seal edge. The inflection portion is formed such that a thickness of the seal edge is less than that of the body portion.

Abstract: A display filter capable of enhancing the visible light transmittance and contrast ratio for a bright room condition and a display device including the same. The display filter includes a filter base, and an external light-shielding layer, disposed on a surface of the filter base, including a matrix made of a transparent resin and a plurality of wedge-shaped black stripes arranged parallel to each other at a surface of the matrix.

Abstract: An optical filter that may include a transparent substrate, a photocatalytic film formed on the back surface of the transparent substrate, a metal pattern formed by selectively exposing the photocatalytic film to light and growing a metal crystal thereon by plating, and a near-infrared ray shielding and photoselective absorbing layer formed on the metal pattern. Since the optical filter may exhibit superior color reproduction and excellent shielding performance against electromagnetic waves, near-infrared rays and neon light, it may be applied to a variety of image display devices, e.g., PDPs.

Abstract: A composition for forming a low dielectric thin film, which includes a silane polymer, porous nanoparticles and an organic solvent, and a method of preparing a low dielectric thin film using the same. The low dielectric thin film prepared using the composition of the current invention may exhibit a low dielectric constant and excellent mechanical strength, and thus may be applied to conductive materials, display materials, chemical sensors, biocatalysts, insulators, packaging materials, etc.

Abstract: A porous low-dielectric constant thin film with controlled solvent diffusion into pores of the porous thin film. The porous thin film i s formed from a composition including a porogen containing at least one ?-? interacting functional group, a thermostable matrix precursor, and a solvent dissolving the porogen and the matrix precursor. The porous thin film thus formed has mesopores not smaller than 10 nm in size and has a solvent diffusion rate not higher than 30 ?m2/sec. Due to the presence of the large pores, the porous thin film can greatly inhibit solvent diffusion into the pores of the thin film, which is encountered during wet processes, without substantial changes in dielectric constant, elastic modulus and hardness depending on the porosity of the thin film.

Abstract: A siloxane-based polymer having superior mechanical properties and low dielectric properties and a method for forming a dielectric film using the polymer. The siloxane-based polymer not only has superior mechanical properties, but also exhibits low hygroscopicity and good compatibility with pore-forming materials, which leads to a low dielectric constant. In addition, since the siloxane-based polymer is highly compatible with pore-forming materials and has improved applicability to semiconductor processes, it may be advantageously used as a material for dielectric films of semiconductor devices.

Abstract: A funnel for use in a cathode ray tube having a panel and a neck includes a body portion connected to the panel; and a substantially rectangle shaped yoke portion extending from a rear end of the body portion, and being connected to the neck at a rear end thereof. The yoke portion has a circular section portion whose cross section is substantially circular. And the circular section portion is formed at a position where the yoke portion is cut for a salvage process of the funnel.

Abstract: A method for manufacturing a high-transmittance optical filter for image display devices, which may include the steps of coating a photocatalytic compound on a transparent substrate to form a photocatalytic film, selectively exposing the photocatalytic film to light and growing a metal crystal thereon by plating to form a metal pattern, and selectively etching and removing the photocatalytic compound remaining on the transparent substrate using a buffered oxide etchant (BOE). According to the method, a high-transmittance, high-resolution and low-resistivity optical filter can be manufactured in a simple manner at low costs.

Abstract: Provided is a front-side filter which can be easily attached to a cover of a display device, but is difficult to detach from the cover even after long term use and further provided is a PDP device including the same filter. The front-side filter includes a filter base having at least one function among a near-infrared ray shielding function, and a neon light shielding function, and an electromagnetic wave shielding function; and an antireflective layer with an edge pattern, formed on a side of the filter base in such a way that the entire edge portion or a part of the edge portion of the filter base is exposed through the edge pattern to provide a fixing means formed in the edge pattern.

Abstract: A method of producing a porous low dielectric thin film is provided. The method comprises conducting hydrolysis and polycondensation of a polyreactive cyclic siloxane compound alone or in conjunction with one or more types of linear siloxane compounds or in conjunction with a Si monomer having an organic leg in the presence of water, organic hydroxide, and an organic solvent to produce a siloxane-based polymer, dissolving the polymer in water or the organic solvent to produce a coating solution, applying the coating solution on a substrate, and heat curing the resulting substrate. Even though a pore forming material is not used, it is possible to produce a porous low dielectric thin film.

Abstract: A method of preparing a mesoporous thin film having a low dielectric constant, which includes mixing a cyclic siloxane-based monomer, an organic solvent, an acid catalyst or a base catalyst, and water, to prepare a coating solution, which is then applied on a substrate and heat cured. The mesoporous thin film of the current invention may exhibit excellent physical properties including hardness and elastic modulus, and may have a low dielectric constant of 2.5 or less, and thus, may be used to manufacture semiconductors.

Abstract: A black matrix, a method for preparing the black matrix, a flat panel display and an electromagnetic interference filter using the black matrix. The black matrix may comprise a substrate, a titanium oxide layer, a Ni plating layer, and a Ni/Pd alloy layer. The method may comprise the steps of forming a titanium oxide layer, forming a metal particle-deposited pattern on the titanium oxide layer, forming a Ni electroless plating layer on the metal particle-deposited pattern, and forming a Ni/Pd alloy layer on the Ni electroless plating layer. Since the black matrix may have a high blackening density via simple selective multilayer plating without using a high-price vacuum sputtering apparatus and undergoing photolithography, unlike conventional chromium-based black matrices, it may be employed in various flat panel displays. In addition, since the black matrix may exhibit superior electrical conductivity, it may be used in electromagnetic interference filters without additional front-surface blackening.

Abstract: An embodiment is provided of a flat lamp that may include: a lower substrate and an upper substrate arranged to face each other and separated by a predetermined distance, with a plurality of discharge cells formed between the lower substrate and the upper substrate; a plurality of first spacers formed between the lower substrate and the upper substrate and dividing the discharge cells in a first direction; and first electrodes and second electrodes formed in pairs in the first spacers, each pair of the first electrode and the second electrode being present in each of the discharge cells.

Abstract: A composition for preparing a nanoporous material. The composition comprises a thermostable matrix precursor, a calixarene derivative, and a solvent. The composition may enable formation of a low dielectric constant film in which nanopores with a size not larger than 50 ? are uniformly distributed.