Abstract: A printing apparatus includes a head part, an encoder, a tension sensor, a head part temperature sensor, an edge sensor, an estimation part, a storage, and an output part. The estimation part estimates print quality in terms of a page printed by the head part on the basis of variation elements detected by the encoder, the tension sensor, the head part temperature sensor, and the edge sensor. The storage stores print quality information containing the printed page and the print quality estimated by the estimation part in association with each other. The output part outputs the print quality information to a display, a post-processing device, and a printer controller section.

Abstract: When pressure in a chamber is brought to atmospheric pressure and the chamber is filled with an inert gas atmosphere, the atmosphere in the chamber is sucked into an oxygen concentration analyzer through a sampling line such that oxygen concentration in the chamber is measured by the oxygen concentration analyzer. When the pressure in the chamber is reduced to less than atmospheric pressure, nitrogen gas is supplied to the oxygen concentration analyzer through an inert gas supply line simultaneously with suspending the measurement of oxygen concentration in the chamber. Even when the measurement of oxygen concentration in the chamber is suspended, reverse flow to the oxygen concentration analyzer from a gas exhaust pipe can be prevented, and the oxygen concentration analyzer can be prevented from being exposed to exhaust from the chamber. The configuration results in maintaining measurement accuracy of the oxygen concentration analyzer in a low oxygen concentration range.

Abstract: The disclosure provides a substrate processing apparatus that processes a surface of a substrate with a processing fluid in a supercritical state, in which the substrate is protected from the pressure fluctuation caused by partial vaporization of the processing fluid in the flow path. A substrate processing apparatus which processes a surface of a substrate with a processing fluid in a supercritical state includes a chamber housing provided therein with a processing space capable of housing the substrate and a flow path which receives the processing fluid from outside and guides the processing fluid to the processing space, and a fluid supply part which pressure-feeds the processing fluid to the flow path, wherein a plurality of bent parts which change a flow direction of the processing fluid are provided in the flow path.

Abstract: A substrate processing method includes a preprocessing forming step of forming a preprocessing film on a surface of a substrate having the surface on which a first region and a second region in which different substances are exposed are present, a preprocessing film separating step of separating the preprocessing film from the surface of the substrate with a stripping liquid, a processing film forming step of forming a processing film on the surface of the substrate after the preprocessing film separating step, and a processing film separating step of separating the processing film from the surface of the substrate with the stripping liquid.

Abstract: A valve is closed while a cleaning liquid is fed into a tubular body of a cleaning nozzle, and a piezoelectric element applies vibrations to the cleaning liquid. This causes droplets of the cleaning liquid to be produced and discharged from a plurality of discharge holes. The droplet diameter of the discharged droplets is in the range from 15 to 200 ?m, and the distribution of the droplet diameter is such that the value of where a value of 3? does not exceed 10% of the average droplet diameter. The droplet speed is in the range from 20 to 100 meters per second, and the distribution of the droplet speed is such that the value of where a value of 3? does not exceed 10% of the average droplet speed. The droplet flow rate is not less than 10 milliliters per minute. Discharging the droplets of the cleaning liquid from the cleaning nozzle toward a substrate while satisfying these discharge conditions improves cleaning efficiency without damages to the substrate.

Abstract: A similarity calculation apparatus according to the present invention includes: a name acquisition unit configured to acquire a first group name to which each word belonging to a first synonym group belongs and a second group name to which each word belonging to a second synonym group belongs; a name set generation unit configured to generate a first group name set and a second group name set; and a similarity calculation unit configured to calculate similarity between the first group name set and the second group name set. Therefore, even when a plurality of synonym groups are created, terms can be effectively unified.

Abstract: The wind velocity of the air injected by the air-blow dryers 7a, 7b is lower than that of the air injected by the air-blow dryers 7c, 7d. That is, since a large amount of moisture remains on the front surface M1 of the printing medium M passing through the air-blow dryers 7a, 7b, the printing medium M is dried while the flow of the aqueous inks is suppressed by injecting the air at a lower wind velocity. On the other hand, the moisture decreases on the front surface M1 of the printing medium M dried by the air-blow dryers 7a, 7b and the fluidity of the aqueous inks is reduced. Accordingly, the drying of the printing medium M is promoted by injecting the air at a high wind velocity to the printing medium M passing through the air-blow dryers 7c, 7d.

Abstract: A printing system including a first printer and a second printer is provided with: a job group creation unit that creates a job group defining a plurality of jobs to be grouped and a print order thereof; a job group storage unit that stores information on the print order of the plurality of jobs; a job group updating unit that updates the information on the print order stored in the job group storage unit based on information on an output order when printing is executed by the second printer; and a print instruction unit that instructs the first printer to execute printing based on the plurality of jobs in the print order stored in the job group storage unit.

Abstract: An image is printed on the front surface M1 by discharging the inks to the front surface M from the discharge heads 321 (first head) facing the front surface M1 (recording surface) of the printing medium M from above. Thus, the inks discharged from the discharge heads 321 partially become mist to possibly produce ink mist. Accordingly, the ink cover 51 (first cover) is arranged between the discharge heads 321 and the front surface M1 of the printing medium M before the discharge heads 321 discharges the inks to the printing medium M. By providing the ink cover 51 for the front surface M1 of the printing medium M before printing in this way, the adhesion of the ink mist to this front surface M1 can be suppressed.

Abstract: A printing system includes a book body printing section including a book body printing machine and outputting book bodies sequentially, and a cover printing section including a cover printing machine and outputting covers sequentially. The book body printing machine and the cover printing machine respectively receive printing order data indicating a printing order with regard to a plurality of jobs from a print control apparatus, and perform printing in the printing order indicated by the printing order data. The print control apparatus generates the printing order data, so that an inserting order in unit of job to a bookbinding machine of the book bodies output from the book body printing section coincides with an inserting order in unit of job to the bookbinding machine of the covers output from the cover printing section.

Abstract: A substrate processing apparatus processes a surface of a substrate with a processing fluid and includes a support tray in which a concave part for housing the substrate is provided on an upper surface thereof; a storage container in which a cavity is formed, wherein the support tray may be stored in a horizontal posture in the cavity; and a fluid supply part supplying the processing fluid to the cavity, wherein the storage container has a flow path which receives the processing fluid and discharges the processing fluid in a horizontal direction into the cavity from a discharge port that opens on a side wall surface of the cavity and toward the cavity, and a lower end position of the discharge port in a vertical direction is the same as or higher than a position of the upper surface of the support tray stored in the cavity.

Abstract: The illumination optical system includes a beam shaper which converts an intensity distribution of a laser beam in each of a short axis direction and a long axis direction, which is a Gaussian distribution, into an intensity distribution of a parallel beam on a modulation surface of the optical modulator in each of the short axis direction and the long axis direction, which is a top hat distribution. The modulation surface and an irradiated surface are optically conjugated with respect to the long axis direction by a third lens and a fourth lens. Further, the modulation surface and a front focus position of the fourth lens are optically conjugated with respect to the short axis direction by a first lens, a second lens, and the third lens. The fourth lens condenses a beam having a top hat distribution at the front focus position onto the irradiated surface.

Abstract: A semiconductor wafer to be treated is heated at a first preheating temperature ranging from 100 to 200° C. while a pressure in a chamber housing the semiconductor wafer is reduced to a pressure lower than an atmospheric pressure. After the semiconductor wafer is preheated to increase the temperature into a second preheating temperature ranging from 500 to 700° C. while the pressure in the chamber is restored to a pressure higher than the reduced pressure, a flash lamp emits a flashlight to a surface of the semiconductor wafer. Heating the semiconductor wafer at the first preheating temperature that is a relatively low temperature enables, for example, the moisture absorbed on the surface of the semiconductor wafer in trace amounts to be desorbed from the surface, and also enables the flash heating treatment to be performed with oxygen derived from such absorption removed as much as possible.

Abstract: A substrate treatment method includes a first gas treating step, a water-repellency treatment step, and a spraying step. In the first gas treating step, a first gas is supplied to the substrate inside the chamber in a state in which the inside of the chamber is decompressed. The first gas includes gas of an organic solvent. The water-repellency treatment step is executed after the first gas treating step. In the water-repellency treatment step, the inside of the chamber is in the decompressed state, and a water-repellent agent is supplied to the substrate inside the chamber. The spraying step is executed after the water-repellency treatment step. In the spraying step, the inside of the chamber is in the decompressed state, and a first liquid is sprayed over the substrate inside the chamber. The first liquid includes liquid of an organic solvent.

Abstract: The substrate treatment method includes a first decompressing step, a first pressurizing step, and a first atmospheric pressure step. In the first decompressing step, the inside of a chamber is in a decompressed state, and a first gas is supplied to a substrate inside the chamber. The first gas includes an organic solvent. The first pressurizing step is executed after the first decompressing step. In the first pressurizing step, mixed gas is supplied to the substrate inside the chamber, and the inside of the chamber is pressurized from the decompressed state to an atmospheric pressure state. The mixed gas includes an organic solvent and inert gas. The first atmospheric pressure step is executed after the first pressurizing step. In the first atmospheric pressure step, the inside of the chamber is maintained in the atmospheric pressure state, and at least any of liquid discharge treatment and substrate treatment is performed.

Abstract: In a printing apparatus, a colorimeter is provided for performing imaging calibration on an inline scanner for inspecting a printed image. During a printing operation, the inline scanner captures a test pattern image formed on paper and thereby obtains calibration imaging data, the colorimeter performs color measurement on the test pattern image and thereby obtains calibration colorimetric data, both data are used to update a correction factor LUT for imaging calibration, and the correction factor LUT is used to perform imaging calibration on the inline scanner.

Abstract: A semiconductor wafer is preheated with a halogen lamp, and then is heated by irradiation with a flash of light emitted from a flash lamp. The preheating with the halogen lamp is continued for a short time even after the flash lamp turns off. A radiation thermometer measures a front surface temperature and a back surface temperature of the semiconductor wafer. A temperature integrated value is calculated by integration of temperatures of the semiconductor wafer measured during a period from a start of the flash irradiation to an end of the heating of the semiconductor wafer. It is determined that the semiconductor wafer is cracked at the time of flash irradiation when the calculated temperature integrated value deviates from a preset range between an upper limit value and a lower limit value.

Abstract: A substrate processing method includes a preprocessing forming step of forming a preprocessing film on a surface of a substrate having the surface on which a first region and a second region in which different substances are exposed are present, a preprocessing film separating step of separating the preprocessing film from the surface of the substrate with a stripping liquid, a processing film forming step of forming a processing film on the surface of the substrate after the preprocessing film separating step, and a processing film separating step of separating the processing film from the surface of the substrate with the stripping liquid.

Abstract: A silicon etching solution includes a mixed solution comprising a quaternary alkylammonium hydroxide and water and further comprises a compound represented by the following formula (1): R1O—(CmH2mO)n—R2 ??(1) wherein R1 is a hydrogen atom or an alkyl group having 1 to 3 carbon atoms, R2 is a hydrogen atom or an alkyl group having 1 to 6 carbon atoms, m is an integer of 2 to 6, and n is 1 or 2.

Abstract: In a second liquid supply step, a second liquid film and a first liquid film surrounding a side of the second liquid film are formed on an upper surface of a substrate. Then, in a vapor layer formation step, by heating the substrate, a second vapor layer is formed by evaporating the second liquid contacting the upper surface of the substrate, and the second liquid film is held on the second vapor layer. Since the second liquid included in the second liquid film has a high vapor pressure, a height position of a lower surface of the floating second liquid film may be kept high. By blowing a gas to the floating second liquid film, a hole is formed in the second liquid film, and by expanding the hole toward an outer periphery of the substrate, the first liquid and the second liquid are removed outside the substrate.