Patents Assigned to SENIC INC.
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Patent number: 11969917Abstract: A silicon carbide wafer manufacturing method includes: a bending measuring step of measuring a first edge having the greatest degree of a bending at one surface of a silicon carbide ingot having one surface; a cutting start step of starting a cutting at a second edge having a distance of r×a along an edge of the one surface from the first edge in a direction parallel to or with a predetermined off angle with respect to the one surface through the wire saw, a cutting speed being decreased to a first cutting speed in the cutting start step; a cutting proceeding step in which the first cutting speed is substantially constant within a variation of about ±5% of the first cutting speed; and a finish step in which the cutting speed is increased from the first cutting speed and the cutting of the silicon carbide ingot is completed.Type: GrantFiled: January 14, 2022Date of Patent: April 30, 2024Assignee: SENIC Inc.Inventors: Jung-Gyu Kim, Kap-Ryeol Ku, Jung Doo Seo, Jung Woo Choi, Jong Hwi Park
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Patent number: 11939698Abstract: A wafer manufacturing method, an epitaxial wafer manufacturing method, and a wafer and epitaxial wafer manufactured thereby, are provided. The wafer manufacturing method enables the manufacture of a wafer with a low density of micropipe defects and minimum numbers of particles and scratches. The epitaxial wafer manufacturing method enables the manufacture of an epitaxial wafer that has low densities of defects such as downfall, triangular, and carrot defects, exhibits excellent device characteristics, and improves the yield of devices.Type: GrantFiled: November 3, 2020Date of Patent: March 26, 2024Assignee: SENIC INC.Inventors: Jong Hwi Park, Jung-Gyu Kim, Eun Su Yang, Byung Kyu Jang, Jung Woo Choi, Yeon Sik Lee, Sang Ki Ko, Kap-Ryeol Ku
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Publication number: 20240076799Abstract: A wafer manufacturing method, an epitaxial wafer manufacturing method, and a wafer and epitaxial wafer manufactured thereby, are provided. The wafer manufacturing method enables the manufacture of a wafer with a low density of micropipe defects and minimum numbers of particles and scratches. The epitaxial wafer manufacturing method enables the manufacture of an epitaxial wafer that has low densities of defects such as downfall, triangular, and carrot defects, exhibits excellent device characteristics, and improves the yield of devices.Type: ApplicationFiled: November 1, 2023Publication date: March 7, 2024Applicant: SENIC INC.Inventors: Jong Hwi PARK, Jung-Gyu KIM, Eun Su YANG, Byung Kyu JANG, Jung Woo CHOI, Yeon Sik LEE, Sang Ki KO, Kap-Ryeol KU
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Patent number: 11862685Abstract: The wafer having a retardation distribution measured with a light having a wavelength of 520 nm, wherein an average value of the retardation is 38 nm or less, wherein the wafer comprises a micropipe, and wherein a density of the micropipe is 1.5/cm2 or less, is disclosed.Type: GrantFiled: February 4, 2022Date of Patent: January 2, 2024Assignee: SENIC INC.Inventors: Jong Hwi Park, Kap-Ryeol Ku, Jung-Gyu Kim, Jung Woo Choi, Myung-Ok Kyun
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Patent number: 11859305Abstract: A method of growing a semi-insulating SiC single crystal ingot, the method comprising the steps of: (1) placing a dopant coated with silicon carbide (SiC) and a carbon-based material into a reaction vessel containing a seed crystal fixed thereto; and (2) growing a SiC single crystal on the seed crystal, thereby yielding a high-quality semi-insulating SiC single crystal ingot with a uniform thickness-based doping concentration. In addition, another embodiment relates to a method of growing a semi-insulating silicon carbide single crystal ingot, the method comprising the steps of: (a) placing in a reaction vessel, a composition comprising a carbon-containing polymer resin, a solvent, a dopant, and silicon carbide (SiC); (b) solidifying the composition; and (c) growing a SiC single crystal ingot on a seed crystal fixed to the reaction vessel, thereby yielding a high-quality semi-insulating SiC single crystal ingot with a uniform thickness-based doping concentration.Type: GrantFiled: February 16, 2023Date of Patent: January 2, 2024Assignee: SENIC Inc.Inventors: Jung Woo Choi, Jung-Gyu Kim, Kap-Ryeol Ku, Sang Ki Ko, Byung Kyu Jang
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Patent number: 11856678Abstract: Example embodiments relate to a method of measurement, an apparatus for measurement, and an ingot growing system that measure properties relating an induction heating characteristic of a graphite article. The method of measurement comprises an arranging step of arranging a graphite article to the coil comprising a winded conducting wire; and a measuring step of applying power for measurement to the coil through means of measurement connected electronically to the coil, and measuring electromagnetic properties induced in the coil. The method of measurement and the like measure electromagnetic properties of graphite articles like an ingot growing container, and an insulating material, and provide data required for selecting so that further enhanced reproducibility for growth of an ingot can be secured.Type: GrantFiled: October 23, 2020Date of Patent: December 26, 2023Assignee: SENIC INC.Inventors: Eun Su Yang, Jong Hwi Park, Jung Woo Choi, Byung Kyu Jang, Sang Ki Ko, Jongmin Shim, Kap-Ryeol Ku, Jung-Gyu Kim
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Patent number: 11846038Abstract: A method of growing a semi-insulating SiC single crystal ingot, the method comprising the steps of: (1) placing a dopant coated with silicon carbide (SiC) and a carbon-based material into a reaction vessel containing a seed crystal fixed thereto; and (2) growing a SiC single crystal on the seed crystal, thereby yielding a high-quality semi-insulating SiC single crystal ingot with a uniform thickness-based doping concentration. In addition, another embodiment relates to a method of growing a semi-insulating silicon carbide single crystal ingot, the method comprising the steps of: (a) placing in a reaction vessel, a composition comprising a carbon-containing polymer resin, a solvent, a dopant, and silicon carbide (SiC); (b) solidifying the composition; and (c) growing a SiC single crystal ingot on a seed crystal fixed to the reaction vessel, thereby yielding a high-quality semi-insulating SiC single crystal ingot with a uniform thickness-based doping concentration.Type: GrantFiled: July 26, 2019Date of Patent: December 19, 2023Assignee: SENIC Inc.Inventors: Jung Woo Choi, Jung-Gyu Kim, Kap-Ryeol Ku, Sang Ki Ko, Byung Kyu Jang
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Patent number: 11795572Abstract: A method of manufacturing a silicon carbide ingot, includes a preparing operation of adjusting internal space of a reactor in which silicon carbide raw materials and a seed crystal are disposed to have a high vacuum atmosphere, a proceeding operation of injecting an inert gas into the internal space, heating the internal space by moving a heater surrounding the reactor to induce the silicon carbide raw materials to sublimate, and growing the silicon carbide ingot on the seed crystal, and a cooling operation of cooling the temperature of the internal space to room temperature. The moving of the heater has a relative position which becomes more distant at a rate of 0.1 mm/hr to 0.48 mm/hr based on the seed crystal.Type: GrantFiled: May 25, 2021Date of Patent: October 24, 2023Assignee: SENIC INC.Inventors: Byung Kyu Jang, Jong Hwi Park, Eun Su Yang, Jung Woo Choi, Sang Ki Ko, Kap-Ryeol Ku, Jung-Gyu Kim
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Patent number: 11708644Abstract: A method for preparing a SiC ingot includes: preparing a reactor by disposing a raw material in a crucible body and disposing a SiC seed in a crucible cover, and then wrapping the crucible body with a heat insulating material having a density of 0.14 to 0.28 g/cc; and growing the SiC ingot from the SiC seed by placing the reactor in a reaction chamber and adjusting an inside of the reactor to a crystal growth atmosphere such that the raw material is vapor-transported and deposited to the SiC seed.Type: GrantFiled: June 30, 2020Date of Patent: July 25, 2023Assignee: SENIC INC.Inventors: Jong Hwi Park, Myung-Ok Kyun, Jongmin Shim, Byung Kyu Jang, Jung Woo Choi, Sang Ki Ko, Kap-Ryeol Ku, Jung-Gyu Kim
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Publication number: 20230203708Abstract: In a method for manufacturing a silicon carbide ingot, a silicon carbide ingot, a system for manufacturing a silicon carbide into according to embodiments of the present invention, a crucible assembly comprising a crucible body having an inner space and a crucible cover covering the crucible body, a silicon carbide ingot is grown after disposing a raw material and a silicon carbide seed, wherein a weight of the crucible assembly is set to have a weight ratio of 1.5 to 2.7 when a weight of the raw material is regarded as 1. Thus, a silicon carbide ingot has a large area and reduced defects can be manufactured.Type: ApplicationFiled: June 2, 2020Publication date: June 29, 2023Applicant: SENIC Inc.Inventors: Jonghwi PARK, Jungwoo CHOI, Junggyu KIM, Kapryeol KU, Myungok KYUN
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Patent number: 11646209Abstract: A method of cleaning a wafer comprises: a scrubbing operation comprising treating a target wafer to be cleaned with a brush at a rotation rate of 200 rpm or less to prepare a brush cleaned wafer; and a cleaning operation comprising cleaning the brush cleaned wafer with a cleaning solution to prepare a cleaned bare wafer, wherein the cleaning operation comprises a first cleaning operation and a second cleaning operation sequentially.Type: GrantFiled: September 17, 2021Date of Patent: May 9, 2023Assignee: SENIC INC.Inventors: Jong Hwi Park, Il Hwan Yoo, Kap-Ryeol Ku, Jung-Gyu Kim, Jung Woo Choi, Eun Su Yang, Byung Kyu Jang, Sang Ki Ko
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Patent number: 11591711Abstract: A silicon carbide ingot producing method is provided. The method produces a silicon carbide ingot in which an internal space of a reactor is depressurized and heated to create a predetermined difference in temperature between upper and lower portions of the internal space. The method produces a silicon carbide ingot in which a plane of a seed crystal corresponding to the rear surface of the silicon carbide ingot is lost minimally. Additionally, the method produces a silicon carbide ingot with few defects and good crystal quality.Type: GrantFiled: November 3, 2020Date of Patent: February 28, 2023Assignee: SENIC INC.Inventors: Jong Hwi Park, Eun Su Yang, Byung Kyu Jang, Jung Woo Choi, Sang Ki Ko, Kap-Ryeol Ku, Jung-Gyu Kim
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Patent number: 11566344Abstract: A wafer having relaxation moduli different by 450 GPa or less, as determined by dynamic mechanical analysis, when loaded to 1 N and 18 N with a loading rate of 0.1 N/min at a temperature of 25° C.Type: GrantFiled: March 5, 2021Date of Patent: January 31, 2023Assignee: SENIC INC.Inventors: Jong Hwi Park, Jongmin Shim, Eun Su Yang, Yeon Sik Lee, Byung Kyu Jang, Jung Woo Choi, Sang Ki Ko, Kap-Ryeol Ku, Jung-Gyu Kim
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Publication number: 20220403551Abstract: A silicon carbide wafer has one surface and the other surface opposite to the one surface. An average Rmax roughness of the one surface is 2.0 nm or less, and an average Ra roughness of the one surface is 0.1 nm or less. An edge region is a region in which a distance from an edge of the silicon carbide wafer toward a center is 5% to 75% of a radius of the silicon carbide wafer, and a central region is a region having a radius of 25% of the radius of the silicon carbide wafer at the center of the silicon carbide wafer. A difference between an average Rmax roughness of the edge region of the one surface and an average Rmax roughness of the central region of the one surface is 0.01 nm to 0.5 nm.Type: ApplicationFiled: June 9, 2022Publication date: December 22, 2022Applicant: SENIC Inc.Inventors: Jung Woo CHOI, Myung Ok KYUN, Jong Hwi PARK, Jung Doo SEO, Jung-Gyu KIM, Kap-Ryeol KU
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Publication number: 20220341055Abstract: A SiC ingot includes: a main body including a first cross-sectional plane of the main body and a second cross-sectional plane of the main body facing the first cross-sectional plane; and a protrusion disposed on the second cross-sectional plane and including a convex surface from the second cross-sectional plane of the main body, wherein a first end point disposed at one end of the second cross sectional plane, a second end point disposed at another end of the second cross sectional plane, and a peak point disposed on the convex surface are disposed on a third cross-sectional plane of the main body perpendicular to the first cross-sectional plane, and wherein a radius of curvature of an arc corresponding to a line of intersection between the third cross-sectional plane and the convex surface satisfies Equation 1 below: 3D?r?37D??[Equation 1] where r is the radius of curvature of the arc corresponding to the line of intersection between the third cross-sectional plane and the convex surface, and D is a lengType: ApplicationFiled: June 24, 2022Publication date: October 27, 2022Applicant: SENIC Inc.Inventors: Jong Hwi PARK, Myung-Ok KYUN, Jung Woo CHOI, Kap-Ryeol KU, Jung-Gyu KIM
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Patent number: 11474012Abstract: A method for preparing a SiC ingot includes: disposing a raw material and a SiC seed crystal facing each other in a reactor having an internal space; subliming the raw material by controlling a temperature, a pressure, and an atmosphere of the internal space; growing the SiC ingot on the seed crystal; and collecting the SiC ingot after cooling the reactor. The wafer prepared from the ingot, which is prepared from the method, generates cracks when an impact is applied to a surface of the wafer, the impact is applied by an external impact source having mechanical energy, and a minimum value of the mechanical energy is 0.194 J to 0.475 J per unit area (cm2).Type: GrantFiled: June 29, 2020Date of Patent: October 18, 2022Assignee: SENIC INC.Inventors: Jong Hwi Park, Jongmin Shim, Eun Su Yang, Yeon Sik Lee, Byung Kyu Jang, Jung Woo Choi, Sang Ki Ko, Kap-Ryeol Ku, Jung-Gyu Kim
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Patent number: 11466383Abstract: A SiC ingot includes: a main body including a first cross-sectional plane of the main body and a second cross-sectional plane of the main body facing the first cross-sectional plane; and a protrusion disposed on the second cross-sectional plane and including a convex surface from the second cross-sectional plane of the main body, wherein a first end point disposed at one end of the second cross sectional plane, a second end point disposed at another end of the second cross sectional plane, and a peak point disposed on the convex surface are disposed on a third cross-sectional plane of the main body perpendicular to the first cross-sectional plane, and wherein a radius of curvature of an arc corresponding to a line of intersection between the third cross-sectional plane and the convex surface satisfies Equation 1 below: 3D?r?37D??[Equation 1] where r is the radius of curvature of the arc corresponding to the line of intersection between the third cross-sectional plane and the convex surface, and D is a lengtType: GrantFiled: June 30, 2020Date of Patent: October 11, 2022Assignee: SENIC INC.Inventors: Jong Hwi Park, Myung-Ok Kyun, Jongmin Shim, Byung Kyu Jang, Jung Woo Choi, Sang Ki Ko, Kap-Ryeol Ku, Jung-Gyu Kim
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Publication number: 20220320296Abstract: In a silicon carbide wafer in an embodiment, in the photoluminescence signal intensity spectrum obtained after irradiating a laser on one surface of the silicon carbide wafer, the number of peak signals having an intensity more than 1.2 times the average signal intensity of the spectrum is 1/cm2 or less.Type: ApplicationFiled: March 11, 2022Publication date: October 6, 2022Applicant: SENIC Inc.Inventors: Jung Woo CHOI, Jong Hwi PARK, Jung-Gyu KIM, Jung Doo SEO, Kap-Ryeol KU
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Patent number: 11447889Abstract: An adhesive layer of seed crystal includes a graphitized adhesive layer, wherein the graphitized adhesive layer is prepared by heat-treating a pre-carbonized adhesive layer, and wherein the adhesive layer has Vr value of 28%/mm3 or more, and the Vr value is represented by Equation 1 below: Vr ? = { Sq ( V ? 1 - V ? 2 ) } × 1 ? 0 3 [ Equation ? ? 1 ] where Sg (%) is represented by Equation 2 below, V1 is a volume (mm3) of the pre-carbonized adhesive layer, and V2 is a volume (mm3) of the graphitized adhesive layer, Sg ? = { 1 - ( A ? 2 A ? 1 ) } × 1 ? 0 ? 0 ? % [ Equation ? ? 2 ] where A1 is an area (mm2) of the pre-carbonized adhesive layer, and A2 is an area (mm2) of the graphitized adhesive layer.Type: GrantFiled: June 29, 2020Date of Patent: September 20, 2022Assignee: SENIC INC.Inventors: Jong Hwi Park, Jongmin Shim, Eun Su Yang, Byung Kyu Jang, Jung Woo Choi, Sang Ki Ko, Kap-Ryeol Ku, Jung-Gyu Kim
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Publication number: 20220219354Abstract: A silicon carbide wafer manufacturing method includes: a bending measuring step of measuring a first edge having the greatest degree of a bending at one surface of a silicon carbide ingot having one surface; a cutting start step of starting a cutting at a second edge having a distance of r×a along an edge of the one surface from the first edge in a direction parallel to or with a predetermined off angle with respect to the one surface through the wire saw, a cutting speed being decreased to a first cutting speed in the cutting start step; a cutting proceeding step in which the first cutting speed is substantially constant within a variation of about ±5% of the first cutting speed; and a finish step in which the cutting speed is increased from the first cutting speed and the cutting of the silicon carbide ingot is completed.Type: ApplicationFiled: January 14, 2022Publication date: July 14, 2022Applicant: SENIC Inc.Inventors: Jung-Gyu KIM, Kap-Ryeol KU, Jung Doo SEO, Jung Woo CHOI, Jong Hwi PARK