Abstract: A silicon carbide ingot manufacturing method and a silicon carbide ingot manufacturing system are provided. The silicon carbide ingot manufacturing method and the silicon carbide ingot manufacturing system may change a temperature gradient depending on the growth of an ingot by implementing a guide which has a tilted angle to an external direction from the interior of a reactor, in an operation to grow an ingot during a silicon carbide ingot manufacturing process.
Type:
Application
Filed:
March 28, 2022
Publication date:
July 14, 2022
Applicant:
SENIC INC.
Inventors:
Jong Hwi PARK, Kap-Ryeol KU, Jung-Gyu KIM, Jung Woo CHOI, Jung Doo SEO
Abstract: A method for preparing a SiC ingot includes preparing a crucible assembly comprising a crucible body having an internal space, loading a raw material into the internal space of the crucible body and placing a plurality of SiC seed in the internal space of the crucible body at regular intervals spaced apart from the raw material, and growing the SiC ingot from the plurality of SiC seed by adjusting the internal space of the crucible body to a crystal growth atmosphere such that the raw material is vapor-transported and deposited to the plurality of SiC seed. A density of the crucible body may be 1.70 to 1.92 g/cm3.
Type:
Grant
Filed:
May 22, 2020
Date of Patent:
June 14, 2022
Assignee:
SENIC INC.
Inventors:
Jong Hwi Park, Myung-Ok Kyun, Jongmin Shim, Eun Su Yang, Byung Kyu Jang, Jung Woo Choi, Sang Ki Ko, Kap-Ryeol Ku, Jung-Gyu Kim
Abstract: A method in which a carbonaceous protective film is formed on a rear surface of a single crystal SiC seed, the seed is placed in a reaction container without adhesion, and then single crystal SiC is grown from a SiC raw material on a front surface of the seed allows the seed to grow to a single crystal ingot having a large diameter since the absence of adhesion of the seed to a holder prevents the generation of warps or cracks attributed to a difference in thermal expansion coefficient between the seed and the holder during heating.
Type:
Grant
Filed:
December 20, 2017
Date of Patent:
May 24, 2022
Assignee:
Senic Inc.
Inventors:
Jung Woo Choi, Kap-Ryeol Ku, Jung-Gyu Kim
Abstract: A silicon carbide ingot manufacturing method and a silicon carbide ingot manufacturing system are provided. The silicon carbide ingot manufacturing method and the silicon carbide ingot manufacturing system may change a temperature gradient depending on the growth of an ingot by implementing a guide which has a tilted angle to an external direction from the interior of a reactor, in an operation to grow an ingot during a silicon carbide ingot manufacturing process.
Type:
Grant
Filed:
August 23, 2021
Date of Patent:
May 24, 2022
Assignee:
SENIC INC.
Inventors:
Jong Hwi Park, Kap-Ryeol Ku, Jung-Gyu Kim, Jung Woo Choi, Sang Ki Ko, Byung Kyu Jang, Eun Su Yang, Jung Doo Seo
Abstract: The wafer having a retardation distribution measured with a light having a wavelength of 520 nm, wherein an average value of the retardation is 38 nm or less, wherein the wafer comprises a micropipe, and wherein a density of the micropipe is 1.5/cm2 or less, is disclosed.
Type:
Application
Filed:
February 4, 2022
Publication date:
May 19, 2022
Applicant:
SENIC Inc.
Inventors:
Jong Hwi PARK, Kap-Ryeol KU, Jung-Gyu KIM, Jung Woo CHOI, Myung-Ok KYUN
Abstract: The wafer having a retardation distribution measured with a light having a wavelength of 520 nm, wherein an average value of the retardation is 38 nm or less, wherein the wafer comprises a micropipe, and wherein a density of the micropipe is 1.5/cm2 or less, is disclosed.
Type:
Grant
Filed:
June 23, 2021
Date of Patent:
March 29, 2022
Assignee:
SENIC INC.
Inventors:
Jong Hwi Park, Kap-Ryeol Ku, Sang Ki Ko, Jung-Gyu Kim, Byung Kyu Jang, Jung Woo Choi, Myung-Ok Kyun, Jongmin Shim
Abstract: The method of preparing a silicon carbide ingot includes: disposing a raw material and a silicon carbide seed crystal to be separated in a reactor having an internal space; adjusting a temperature, a pressure, and an atmosphere of the internal space for sublimating the raw material and growing the silicon carbide ingot on the silicon carbide seed crystal; and cooling the reactor and retrieving the silicon carbide ingot, wherein the adjusting proceeds in a first inert gas atmosphere having a flow quantity of 100 sccm to 300 sccm, the cooling proceeds in a second inert gas atmosphere having a flow quantity of 1 sccm to 250 sccm, and the reactor has a thermal conductivity of 120 W/mK or less.
Type:
Application
Filed:
September 17, 2021
Publication date:
March 24, 2022
Applicant:
SENIC INC.
Inventors:
Jong Hwi PARK, Kap-Ryeol KU, Jung Woo CHOI, Byung Kyu JANG, Myung-Ok KYUN, Jung-Gyu KIM, Jung Doo SEO
Abstract: A method of cleaning a wafer comprises: a scrubbing operation comprising treating a target wafer to be cleaned with a brush at a rotation rate of 200 rpm or less to prepare a brush cleaned wafer; and a cleaning operation comprising cleaning the brush cleaned wafer with a cleaning solution to prepare a cleaned bare wafer, wherein the cleaning operation comprises a first cleaning operation and a second cleaning operation sequentially.
Type:
Application
Filed:
September 17, 2021
Publication date:
March 24, 2022
Applicant:
SENIC INC.
Inventors:
Jong Hwi PARK, Il Hwan YOO, Kap-Ryeol KU, Jung-Gyu KIM, Jung Woo CHOI, Eun Su YANG, Byung Kyu JANG, Sang Ki KO
Abstract: A method for preparing a seed crystal including a protective film includes preparing i) a first layer composition of a first binder resin and a first solvent and ii) a second layer composition of a second binder resin, a filler, and a second solvent, applying the first layer composition to the rear surface of a seed crystal to form a first coating layer on the rear surface of the seed crystal and drying the first coating layer to form a first layer on the rear surface of the seed crystal, and applying the second layer composition onto the first layer to form a second coating layer on the first layer, followed by heat treating to form a second layer on the first layer wherein the first layer and the second layer are sequentially disposed on the rear surface of the seed crystal, and wherein the first layer has a thickness corresponding to 30% or less of the distance from the bottom surface of the first layer to the top surface of the second layer.
Type:
Grant
Filed:
October 21, 2019
Date of Patent:
March 8, 2022
Assignee:
SENIC INC.
Inventors:
Sang Ki Ko, Jung-Gyu Kim, Jung Woo Choi, Byung Kyu Jang, Kap-Ryeol Ku
Abstract: A silicon carbide ingot manufacturing method and a silicon carbide ingot manufacturing system are provided. The silicon carbide ingot manufacturing method and the silicon carbide ingot manufacturing system may change a temperature gradient depending on the growth of an ingot by implementing a guide which has a tilted angle to an external direction from the interior of a reactor, in an operation to grow an ingot during a silicon carbide ingot manufacturing process.
Type:
Application
Filed:
August 23, 2021
Publication date:
March 3, 2022
Applicant:
SENIC INC.
Inventors:
Jong Hwi PARK, Kap-Ryeol KU, Jung-Gyu KIM, Jung Woo CHOI, Sang Ki KO, Byung Kyu JANG, Eun Su YANG, Jung Doo SEO
Abstract: The wafer having a retardation distribution measured with a light having a wavelength of 520 nm, wherein an average value of the retardation is 38 nm or less, wherein the wafer comprises a micropipe, and wherein a density of the micropipe is 1.5/cm2 or less, is disclosed.
Type:
Application
Filed:
June 23, 2021
Publication date:
January 20, 2022
Applicant:
SENIC INC.
Inventors:
Jong Hwi PARK, Kap-Ryeol KU, Sang Ki KO, Jung-Gyu KIM, Byung Kyu JANG, Jung Woo CHOI, Myung-Ok KYUN, Jongmin SHIM
Abstract: A method for producing an ingot includes loading a raw material comprising a raw material powder having a D50 of 80 ?m or more into a reactor (loading step), controlling the internal temperature of the reactor such that adjacent particles of the raw material powder are interconnected to form a necked raw material (necking step), and sublimating components of the raw material from the necked raw material to grow an ingot (ingot growth step).
Type:
Grant
Filed:
October 28, 2019
Date of Patent:
January 18, 2022
Assignee:
SENIC INC.
Inventors:
Byung Kyu Jang, Jung-Gyu Kim, Jung Woo Choi, Sang Ki Ko, Kap-Ryeol Ku