Abstract: Exemplary embodiments of the present invention relate to a including a substrate, a first conductive type semiconductor layer arranged on the substrate, a second conductive type semiconductor layer arranged on the first conductive type semiconductor layer, an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, a first electrode pad electrically connected to the first conductive type semiconductor layer, a second electrode pad arranged on the second conductive type semiconductor layer, an insulation layer disposed between the second conductive type semiconductor layer and the second electrode pad, and at least one upper extension electrically connected to the second electrode pad, the at least one upper extension being electrically connected to the second conductive type semiconductor layer.

Abstract: The present invention provides a method of fabricating a semiconductor substrate and a method of fabricating a light emitting device. The method includes forming a first semiconductor layer on a substrate, forming a metallic material layer on the first semiconductor layer, forming a second semiconductor layer on the first semiconductor layer and the metallic material layer, wherein a void is formed in a first portion of the first semiconductor layer under the metallic material layer during formation of the second semiconductor layer, and separating the substrate from the second semiconductor layer by etching at least a second portion of the first semiconductor layer using a chemical solution.

Abstract: Exemplary embodiments of the present invention disclose a light emitting diode including an n-type contact layer doped with silicon, a p-type contact layer, an active region disposed between the n-type contact layer and the p-type contact layer, a superlattice layer disposed between the n-type contact layer and the active region, the superlattice layer including a plurality of layers, an undoped intermediate layer disposed between the superlattice layer and the n-type contact layer, and an electron reinforcing layer disposed between the undoped intermediate layer and the superlattice layer. Only a final layer of the superlattice layer closest to the active region is doped with silicon, and the silicon doping concentration of the final layer is higher than that of the n-type contact layer.

Abstract: Provided is a high-efficiency light emitting diode (LED) that includes: a support substrate; a semiconductor stack positioned on the support substrate, the semiconductor stack including a p-type compound semiconductor layer, an active layer, and an n-type compound semiconductor layer; a first electrode positioned between the support substrate and the semiconductor stack and in ohmic contact with the semiconductor stack; a first bonding pad positioned on a portion of the first electrode that is exposed outside of the semiconductor stack; and a second electrode positioned on the semiconductor stack. Protrusions are formed on exposed surfaces of the semiconductor stack. In addition, the second electrode may be positioned between the first electrode and the support substrate and contacted with the n-type compound semiconductor layer through openings of the semiconductor stack.

Abstract: Disclosed is an improved light-emitting device for an AC power operation. An AC light-emitting device according to the present invention employs a variety of means by which light emission time is prolonged during a ½ cycle in response to a phase change of an AC power source and a flicker effect can be reduced. For example, the means may be switching blocks respectively connected to nodes between the light emitting cells, switching blocks connected to a plurality of arrays, or a delay phosphor. Further, there is provided an AC light-emitting device, wherein a plurality of arrays having the different numbers of light emitting cells are employed to increase light emission time and to reduce a flicker effect.

Abstract: Disclosed herein is a light emitting diode. The light emitting diode includes a support substrate, semiconductor layers formed on the support substrate, and a metal pattern located between the support substrate and the lower semiconductor layer. The semiconductor layers include an upper semiconductor layer of a first conductive type, an active layer, and a lower semiconductor layer of a second conductive type. The semiconductor layers are grown on a sacrificial substrate and the support substrate is homogeneous with the sacrificial substrate.

Abstract: There are provided a light emitting device and a method of manufacturing the same. A light emitting device according to the present invention includes a substrate; an N-type semiconductor layer, an active layer and a P-type semiconductor layer, sequentially formed on the substrate; one or more trenches formed to expose the N-type semiconductor layer by partially removing at least the P-type semiconductor and active layers; a first insulating layer formed on sidewalls of the trenches; and a conductive layer filled in the trenches having the first insulating layer formed therein. According to the present invention, it is possible to obtain a characteristic of uniform current diffusion, and thus, light is uniformly emitted to thereby enhance the light emitting efficiency.

Abstract: The present invention relates to an AC light emitting diode. An object of the present invention is to provide an AC light emitting diode wherein various designs for enhancement of the intensity of light, prevention of flickering of light or the like become possible, while coming out of a unified method of always using only one metal wire with respect to one electrode when electrodes of adjacent light emitting cells are connected through metal wires. To this end, the present invention provides an AC light emitting diode comprising a substrate; bonding pads positioned on the substrate; a plurality of light emitting cells arranged in a matrix form on the substrate; and a wiring means electrically connecting the bonding pads and the plurality of light emitting cells, wherein the wiring means includes a plurality of metal wires connecting an electrode of one of the light emitting cells with electrodes of other electrodes adjacent to the one of the light emitting cells.

Abstract: Exemplary embodiments of the present invention disclose a light emitting diode (LED) and a method of fabricating the same. The LED includes a substrate, a semiconductor stack arranged on the substrate, the semiconductor stack including an upper semiconductor layer having a first conductivity type, an active layer, and a lower semiconductor layer having a second conductivity type, isolation trenches separating the semiconductor stack into a plurality of regions, connectors disposed between the substrate and the semiconductor stack, the connectors electrically connecting the plurality of regions to one another, and a distributed Bragg reflector (DBR) having a multi-layered structure, the DBR disposed between the semiconductor stack and the connectors. The connectors are electrically connected to the semiconductor stack through the DBR, and portions of the DBR are disposed between the isolation trenches and the connectors.

Abstract: Exemplary embodiments of the present invention provide light-emitting diodes having a distributed Bragg reflector. A light-emitting diode (LED) according to an exemplary embodiment includes a light-emitting structure arranged on a first surface of a substrate, the light-emitting structure including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer. A first distributed Bragg reflector is arranged on a second surface of the substrate opposite to the first surface, the first distributed Bragg reflector to reflect light emitted from the light-emitting structure. The first distributed Bragg reflector has a reflectivity of at least 90% with respect to light of a first wavelength in a blue wavelength range, light of a second wavelength in a green wavelength range, and light of a third wavelength in a red wavelength range.

Abstract: A non-polar light emitting diode (LED) having a photonic crystal structure and a method of fabricating the same. A non-polar LED includes a support substrate, a lower semiconductor layer positioned on the support substrate, an upper semiconductor layer positioned over the lower semiconductor layer, a non-polar active region positioned between the lower and upper semiconductor layers, and a photonic crystal structure embedded in the lower semiconductor layer. The photonic crystal structure embedded in the lower semiconductor layer may improve the light emitting efficiency by preventing the loss of light in the semiconductor layer, and the photonic crystal structure is used to improve the polarization ratio of the non-polar LED.

Abstract: A substrate assembly on which a first conduction-type semiconductor layer, an active layer and a second conduction-type semiconductor layer are formed is disclosed, the substrate assembly comprising a first substrate, a second substrate and a bonding layer interposed there between. In the substrate assembly, the thermal expansion coefficient of the bonding layer is smaller than or equal to that of at least one of the first and second substrates.

Abstract: Disclosed are a wafer level LED package and a method of fabricating the same. The method of fabricating a wafer level LED package includes: forming a plurality of semiconductor stacks on a first substrate, each of the semiconductor stacks comprising a first-conductivity-type semiconductor layer, a second-conductivity-type semiconductor layer, and an active region disposed between the first-conductivity-type semiconductor layer and the second-conductivity-type semiconductor layer; preparing a second substrate comprising first lead electrodes and second lead electrodes arranged corresponding to the plurality of semiconductor stacks; bonding the plurality of semiconductor stacks to the second substrate; and cutting the first substrate and the second substrate into a plurality of packages after the bonding is completed. Accordingly, the wafer level LED package is provided.

Abstract: Provided are a vertical-type light emitting device and a method of manufacturing the same. The light emitting device includes a p-type semiconductor layer, an active layer, and an n-type semi-conductor layer that are stacked, a cover layer disposed on a p-type electrode layer to surround the p-type electrode layer, a conductive support layer disposed on the cover layer, and an n-type electrode layer disposed on the n-type semiconductor layer.

Abstract: The present invention relates to a light emitting device, including a plurality of light guide portions, a reflection prevention substance disposed on an inclined surface of each light guide portion of the plurality of light guide portions, and a plurality light emitting regions. Each light emitting region includes a first-type semiconductor layer, a second-type semiconductor layer, and an active layer disposed between the first-type semiconductor layer and the second-type semiconductor layer. Each light guide portion of the plurality of light guide portions is surrounded by light emitting regions of the plurality of light emitting regions.

Abstract: Exemplary embodiments of the present invention disclose a light emitting diode including an n-type contact layer doped with silicon, a p-type contact layer, an active region disposed between the n-type contact layer and the p-type contact layer, a superlattice layer disposed between the n-type contact layer and the active region, the superlattice layer including a plurality of layers, an undoped intermediate layer disposed between the superlattice layer and the n-type contact layer, and an electron reinforcing layer disposed between the undoped intermediate layer and the superlattice layer. Only a final layer of the superlattice layer closest to the active region is doped with silicon, and the silicon doping concentration of the final layer is higher than that of the n-type contact layer.

Abstract: The present invention discloses an alternating current (AC) light emitting diode (LED) having half-wave light emitting cells and full-wave light emitting cells. The AC LED has a plurality of light emitting cells electrically connected between bonding pads on a single substrate. The AC LED includes a first row of half-wave light emitting cells each having an anode terminal and a cathode terminal, a second row of full-wave light emitting cells each having an anode terminal and a cathode terminal, and a third row of half-wave light emitting cells each having an anode terminal and a cathode terminal. In the AC LED, the second row is arranged between the first row and the third row, and the third row includes a pair of light emitting cells that share a cathode terminal with each other.

Abstract: Exemplary embodiments of the present invention relate to a including a substrate, a first conductive type semiconductor layer arranged on the substrate, a second conductive type semiconductor layer arranged on the first conductive type semiconductor layer, an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, a first electrode pad electrically connected to the first conductive type semiconductor layer, a second electrode pad arranged on the second conductive type semiconductor layer, an insulation layer disposed between the second conductive type semiconductor layer and the second electrode pad, and at least one upper extension electrically connected to the second electrode pad, the at least one upper extension being electrically connected to the second conductive type semiconductor layer.

Abstract: An illumination system includes multiple light emitting devices arranged in an area so as to be spaced apart from each other. Each light emitting device includes multiple light emitting diode arrays each of which has one light emitting diode or a plurality of light emitting diodes connected in series. The numbers of the light emitting diodes included in each light emitting diode arrays differs from each other. A controller is configured to establish one or more groups each including one or more light emitting devices and adjust an illumination state of each light emitting device by controlling the driving state of the one or more light emitting diode arrays included in each light emitting device. The controller may select the number of light emitting devices included in each group based on an external condition.

Abstract: The present invention relates to a light emitting device. In the light emitting device of the present invention, light emitting cells of a first light emitting cell block and light emitting cells of a second light emitting cell block corresponding thereto are connected in parallel so that a current can cross the light emitting cells of the first and second light emitting cell blocks. Thus, even though a leakage current occurs in some of light emitting cells, the current is allowed to cross light emitting cells connected in another direction, thereby preventing overload on some of the light emitting cells due to the leakage current and ensuring uniform light emission and prolonged life span in the AC light emitting device.