Patents Assigned to Shin-Etsu Chemical Co., Ltd.
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Publication number: 20240100227Abstract: Provided is a novel device or a novel implantation device. The implantation device is one of the following: (1) an implantation device comprising a material (A) having a density of 12 mg/cm3 or more and a dissolution rate of 80% or less as determined after immersion of the material (A) in physiological saline at 37° C. for 24 hours; and (2) an implantation device comprising a material (A) having a dissolution rate of 80% or less as determined after immersion of the material (A) in physiological saline at 37° C. for 24 hours and a ratio of X/Y of 0.24 or more wherein X is a density (mg/cm3) of the material (A) and Y is a degree of swelling of the material (A) expressed in terms of fold increase as determined after immersion of the material (A) in physiological saline at 37° C. for 60 minutes.Type: ApplicationFiled: February 8, 2022Publication date: March 28, 2024Applicants: Shin-Etsu Chemical Co., Ltd., JAPAN VAM & POVAL CO., LTD., TOHOKU UNIVERSITYInventors: Shuhei KANESATO, Yoshihiro KIMURA, Akinobu OHARUDA, Keita ISHIBA, Masafumi GOTO
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Publication number: 20240101764Abstract: An oil-bleeding silicone rubber composition which comprises 100 parts by mass of (A) an organopolysiloxane containing an alkenyl group, 0.2-20 parts by mass of (B) an organohydrogenpolysiloxane containing a hydrogen atom bonded to a silicon atom, (C) a catalyst based on a platinum-group metal, the amount of which is 0.5-500 ppm in terms of platinum-group metal amount (in mass) with respect to the total mass of the components (A) and (B), 1-10 parts by mass of (D) a specific phenyl-group-containing organopolysiloxane, 1-25 parts by mass of (E) a specific nonfunctional dimethylpolysiloxane, and (F) a specific benzotriazole derivative, the amount of which is 2-100 mol per mol of the platinum atoms contained in the component (C). The oil-bleeding silicone rubber composition gives cured objects having improved heat resistance, without containing any of conventional additives for improving heat resistance.Type: ApplicationFiled: January 13, 2022Publication date: March 28, 2024Applicant: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Tatsuei HARA, Nobu KATO, Shigeru UBUKATA
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Publication number: 20240101856Abstract: According to the present invention, a coating composition which contains (A) a hydrolyzable silyl group-containing acrylic resin, (B) an organopolysiloxane that is represented by average unit formula (I), and (C) a curing catalyst is able to be produced by a simple process; and this coating composition forms a cured coating film that has excellent cracking resistance. coating film hardness, chemical resistance, alkali resistance, heat resistance and weather resistance. (SiO4/2)a(R1SiO3/2)b(R12SiO2/2)c(R13SiO1/2)d(R2O1/2)e??(I) (In the formula, each R1 independently represents a substituted or unsubstituted monovalent hydrocarbon group having 1 to 12 carbon atoms, and at least one of the R1 moieties represents a substituted or unsubstituted aryl group having 6 to 12 carbon atoms; R2 represents a hydrogen atom or an alkyl group having 1 to 6 carbon atoms; a, b, c and d represent numbers that satisfy, 0?a<1, 0<b<1, 0<c?0.Type: ApplicationFiled: April 6, 2021Publication date: March 28, 2024Applicant: SHIN-ETSU CHEMICAL CO., LTD.Inventor: Fumihiro ASO
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Publication number: 20240102142Abstract: A spray coating containing a rare earth fluoride and/or a rare earth acid fluoride contains carbon at 0.01-2% by mass or titanium or molybdenum at 1-1000 ppm. When an acid fluoride is not contained, the spray coating is gray to black in which, in terms of the L*a*b* chromaticity, L* is 25-64, a* is ?3.0 to +5.0, and b* is ?4.0 to +8.0. When an acid fluoride is contained, the spray coating is white or gray to black in which, in terms of the L*a*b* chromaticity, L* is equal to or greater than 25 and less than 91, a* is ?3.0 to +5.0, and b* is ?6.0 to +8.0. By forming this coating on a plasma resistant member, a partial color change is reduced, thus, a member that is capable of reliably realizing the original longevity is obtained.Type: ApplicationFiled: November 22, 2023Publication date: March 28, 2024Applicant: Shin-Etsu Chemical Co., Ltd.Inventors: Noriaki Hamaya, Ichiro Uehara
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Publication number: 20240102159Abstract: A method for producing a gallium precursor, including, a step of preparing a solvent comprising an aqueous solution containing an acid and/or an alkali, a step of immersing gallium in the solvent, a step of making the gallium immersed in the solvent fine, and a step of dissolving the fined gallium. This provides a method for producing a gallium precursor with high quality and highly productive.Type: ApplicationFiled: July 15, 2020Publication date: March 28, 2024Applicant: SHIN-ETSU CHEMICAL CO., LTD.Inventor: Hiroshi HASHIGAMI
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Publication number: 20240103370Abstract: The present invention provides a composition for forming an adhesive film that provides an adhesive film that yields good pattern profiles and has high adhesion to a resist upper layer film to prevent collapse of fine patterns in a fine patterning process during semiconductor apparatus manufacturing processes, as well as a patterning process using the composition and a method for forming an adhesive film using the composition. As such, provided is a composition for forming an adhesive film directly under a resist upper layer film. The composition includes: (A) a polymer containing a repeating unit shown by the following general formula (1) and a repeating unit shown by the following general formula (2); and (B) an organic solvent.Type: ApplicationFiled: August 9, 2023Publication date: March 28, 2024Applicant: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Seiichiro TACHIBANA, Takeru WATANABE, Daisuke KORI, Takashi SAWAMURA
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Publication number: 20240103367Abstract: The present invention is an onium salt represented by the following general formula (1), wherein RALU represents any one of a tertiary ether, tertiary carbonate or acetal formed together with the adjacent oxygen atom; I represents an iodine atom; Ra represents a hydrocarbyl group having 1 to 20 carbon atoms and optionally having a heteroatom; and Z+ represents an onium cation. This can provide an onium salt used for a resist composition that has high sensitivity, excellent resolution, improved LWR (roughness) and CDU (critical dimension uniformity), and that can inhibit collapse of a resist pattern in lithography.Type: ApplicationFiled: July 25, 2023Publication date: March 28, 2024Applicant: SHIN-ETSU CHEMICAL CO., LTD.Inventor: Masahiro FUKUSHIMA
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Publication number: 20240105927Abstract: A negative electrode including: a negative electrode current collector with a roughened surface; and a negative electrode active material layer provided on the negative electrode current collector. The negative electrode active material layer includes: negative electrode active material particles containing a compound of lithium, silicon, and oxygen; and a composite compound filled in interparticle gaps and a surface layer of the negative electrode active material particles, the composite compound at least containing chemically bonded carbon and oxygen atoms, the composite compound not being alloyed with the negative electrode active material particles. A ratio O/Si of the oxygen to the silicon constituting the negative electrode active material particles is in the range of 0.8 or more and 1.2 or less.Type: ApplicationFiled: December 21, 2021Publication date: March 28, 2024Applicant: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Takakazu HIROSE, Takumi MATSUNO, Yusuke OSAWA, Reiko SAKAI, Hiroyuki KOIDE
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Publication number: 20240101762Abstract: This two-component type room temperature fast-curing organopolysiloxane composition: includes a first agent containing, at a specific ratio, (A) a specific structure organopolysiloxane having a silanol group or a hydrolyzable silyl group at molecular chain ends thereof, (B) a hydrolyzable organosilane compound and/or a partially hydrolyzed condensate thereof that releases a cyclic ketone compound as a leaving group (leaving substance) by hydrolysis, and (C) a curing catalyst; and a second agent containing, in a specific amount, (A?) a specific structure organopolysiloxane having a silanol group at molecular chain ends thereof; and has more excellent hardenability than one-component type room temperature-curing organopolysiloxane compositions. This composition leaves or releases a cyclic ketone compound such as cyclobutanone or cyclopentanone as a leaving group (leaving compound) at the time of curing, and thus solves hazard or safety problems with respect to human bodies or environments.Type: ApplicationFiled: January 18, 2022Publication date: March 28, 2024Applicant: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Akira UTA, Takafumi SAKAMOTO
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Publication number: 20240103364Abstract: An onium salt having formula (1) is provided. A chemically amplified resist composition comprising the onium salt as a PAG has advantages including solvent solubility and improved lithography properties such as high sensitivity, high contrast, EL, and LWR when processed by photolithography using high-energy radiation.Type: ApplicationFiled: August 3, 2023Publication date: March 28, 2024Applicant: Shin-Etsu Chemical Co., Ltd.Inventors: Masahiro Fukushima, Tomomi Watanabe, Kenji Yamada
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Publication number: 20240103365Abstract: The present invention provides a pattern forming method using an adhesion film forming composition comprising (A) a polymer compound, (B) a thermal acid generator, and (C) an organic solvent includes steps of: (I-1) applying the adhesion film forming composition onto a substrate to be processed and thereafter performing thermal treatment to form an adhesion film; (I-2) forming a resist upper layer film on the adhesion film using a resist upper layer film forming composition; (I-3) performing pattern exposure on the resist upper layer film and thereafter developing the resist upper layer film with a developer to form a circuit pattern on the resist upper layer film; and (I-4) transferring a pattern to the adhesion film and the substrate to be processed by dry etching with the resist upper layer film on which the circuit pattern is formed as a mask.Type: ApplicationFiled: August 9, 2023Publication date: March 28, 2024Applicant: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Seiichiro TACHIBANA, Takeru WATANABE, Daisuke KORI, Takashi SAWAMURA
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Patent number: 11940391Abstract: A defect inspection apparatus has a defect detection unit 152 that acquires first defect information on a defect of a photomask blank MB as a substrate; and a comparative information acquisition unit 150 that acquires a result of comparison between predetermined defect information stored in a storage unit 155 and the first defect information.Type: GrantFiled: April 1, 2022Date of Patent: March 26, 2024Assignee: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Ryusei Terashima, Takumi Yoshino, Tsuneo Terasawa
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Patent number: 11940728Abstract: A molecular resist composition and a pattern forming process. A molecular resist composition comprising a sulfonium salt having a cation of specific structure and an organic solvent has a high sensitivity and forms a resist film with improved resolution and LWR, when processed by EB or EUV lithography. The molecular resist composition does not contain a base polymer. The molecular resist composition comprising a sulfonium salt having a cation of specific partial structure has a high sensitivity and forms a resist film with improved resolution and LWR, so that the resist composition is quite useful for precise micropatterning.Type: GrantFiled: September 24, 2021Date of Patent: March 26, 2024Assignee: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Masaki Ohashi, Kazuhiro Katayama, Masahiro Fukushima, Shun Kikuchi
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Publication number: 20240091404Abstract: Provided is a novel device (implantation device) containing a gelatin. The implantation device is made of a bioabsorbable non-woven fabric containing a gelatin.Type: ApplicationFiled: February 8, 2022Publication date: March 21, 2024Applicants: Shin-Etsu Chemical Co., Ltd., JAPAN VAM & POVAL CO., LTD., TOHOKU UNIVERSITY, KYOTO MEDICAL PLANNING Co., LtdInventors: Shuhei KANESATO, Yoshihiro KIMURA, Akinobu OHARUDA, Masafumi GOTO
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Publication number: 20240094635Abstract: A chemically amplified positive resist composition comprising (A) a base polymer, (B) a photoacid generator, and (C) a quencher is provided. The base polymer (A) contains a polymer comprising phenolic hydroxy group-containing units, aromatic ring-containing units, and units containing a phenolic hydroxy group protected with an acid labile group. The photoacid generator (B) and the quencher (C) are present in a weight ratio (B)/(C) of less than 3/1. The resist composition exhibits a very high isolated-space resolution and forms a pattern with reduced LER, rectangularity, minimized influences of develop loading and residue defects.Type: ApplicationFiled: August 2, 2023Publication date: March 21, 2024Applicant: Shin-Etsu Chemical Co., Ltd.Inventors: Keiichi Masunaga, Satoshi Watanabe, Kenji Funatsu, Masahiro Fukushima, Masaaki Kotake, Yuta Matsuzawa
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Patent number: 11932782Abstract: The present invention is a room temperature curable resin composition comprising: as the main agent, an organic polymer in which both molecular chain terminals are sealed by a silanol group and/or a hydrolyzable silyl group; and an organic silicon compound of a specific structure having, in a molecule, an organosiloxane structure, a hydrolyzable silyl group, and a hindered amine skeleton. This resin composition produces a cured product in which the degradation over time associated with the effects of light such as UV rays can be suppressed.Type: GrantFiled: August 20, 2020Date of Patent: March 19, 2024Assignee: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Taiki Katayama, Tetsuro Yamada, Munenao Hirokami
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Patent number: 11932936Abstract: The present invention relates to a method for producing a group III compound substrate, including: a base substrate forming step for forming a group III nitride base substrate by a vapor phase synthesis method; a seed substrate forming step for forming a seed substrate on the base substrate; and a group III compound crystal forming step for forming a group III compound crystal on the seed substrate by a hydride vapor phase epitaxy method. The group III compound substrate of the present invention is produced by the method for producing a group III compound substrate of the present invention. According to the present invention, a large-sized and high-quality group III compound substrate can be obtained at a low cost while taking advantage of the high film formation rate characteristic of the hydride vapor phase epitaxy method.Type: GrantFiled: June 16, 2020Date of Patent: March 19, 2024Assignee: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Yoshihiro Kubota, Kazutoshi Nagata
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Patent number: 11934100Abstract: A composition for forming a silicon-containing resist underlayer film contains a compound shown by the following general formula (A-1) and a thermally crosslinkable polysiloxane. R1 represents a methyl group, an ethyl group, a propyl group, an allyl group, or a propargyl group. R2 represents a hydrogen atom, an acetyl group, an acryloyl group, a methacryloyl group, a benzoyl group, a naphthoyl group, or an anthranoyl group. R3 represents a methyl group, an ethyl group, a propyl group, an allyl group, a propargyl group, or a group shown by the following general formula (A-2), where a broken line represents a bonding arm, and R1 and R2 are as defined above. An object of the present invention is to provide a silicon-containing resist underlayer film capable of exhibiting high effect of suppressing ultrafine pattern collapse and forming a resist pattern with favorable pattern profile in multilayer resist methods.Type: GrantFiled: November 22, 2021Date of Patent: March 19, 2024Assignee: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Daisuke Kori, Yusuke Kai, Kazunori Maeda
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Publication number: 20240087905Abstract: An object of the present invention is to provide a wafer edge protection film having dry etching resistance superior to those of the previously-known wafer edge protection films, as well as excellent film forming property even at wafer edge portions, which are difficult to coat: a wafer edge protection film forming method for forming a protection film on a wafer edge of a substrate, including the steps of (i) coating a peripheral edge of the substrate with a composition for forming a protection film including an aromatic ring-containing resin (A) having an organic group represented by the following general formula (1), and a solvent; and (ii) curing the applied composition for forming a protection film by heat or optical irradiation to form the protection film on the peripheral edge of the substrate. wherein RA is a hydrogen atom or a monovalent organic group having 1 to 10 carbon atoms, and * represents a bonding site.Type: ApplicationFiled: August 3, 2023Publication date: March 14, 2024Applicant: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Naoki KOBAYASHI, Toshiharu YANO
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Publication number: 20240084075Abstract: Provided is a resin composition capable of being turned into a cured product having a high glass-transition temperature and excellent dielectric properties as well. The resin composition is a heat-curable bismaleimide resin composition containing: (A) a bismaleimide compound represented by the following formula (1) wherein A independently represents a tetravalent organic group having 4 to 200 carbon atoms, B independently represents a divalent organic group having 2 to 200 carbon atoms, n is 2 to 100, and wherein A and/or B has therein a fluorene frame represented by the following formula (2) wherein each of R1, R2, R3 and R4 independently represents a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, a (hetero)aryl group having 4 to 10 carbon atoms, a hydroxyl group, an alkoxy group, a halogeno group, an amino group, or a sulfenyl group; and (B) a reaction accelerator.Type: ApplicationFiled: July 19, 2023Publication date: March 14, 2024Applicant: Shin-Etsu Chemical Co., Ltd.Inventors: Masayuki IWASAKI, Yoshihiro TSUTSUMI, Naoko TANINAKA