Patents Assigned to Shin-Etsu Quartz Products Co., Ltd.
  • Publication number: 20110256330
    Abstract: A method is provided for producing a silica container arranged with a substrate, having a rotational symmetry, comprised of mainly a silica, and containing gaseous bubbles at least in its peripheral part, and an inner layer, formed on an inner surface of the substrate and comprised of a transparent silica glass; wherein a powdered silica, having particle diameter of 10 to 1000 ?m, containing Ca, Sr, and Ba with the total concentration of 50 to 5000 ppm by weight, and releasing hydrogen molecules with the amount of 3×1016 to 3×1019 molecules/g upon heating at 1000° C. under vacuum, is prepared at least as a powdered raw material for forming the inner layer, and then the inner layer is formed from the powdered silica as the powdered raw material for forming the inner layer.
    Type: Application
    Filed: September 1, 2010
    Publication date: October 20, 2011
    Applicant: SHIN-ETSU QUARTZ PRODUCTS CO., LTD.
    Inventors: Shigeru Yamagata, Tomomi Usui
  • Publication number: 20110240663
    Abstract: A method for producing a silica container having a rotational symmetry is provided. The method includes, forming a preliminarily molded article by feeding a powdered substrate's raw material to an inner wall of an outer frame having aspiration holes with rotating the frame, and forming a silica substrate. The preliminarily molded article is aspirated from an outer peripheral side with controlling a humidity inside the outer frame by ventilating gases present in the outer frame with charging from inside the preliminarily molded article a gas mixture comprised of an O2 gas and an inert gas and made below a prescribed dew-point temperature by dehumidification, and at the same time heated from inside the preliminarily molded article by a discharge-heat melting method with carbon electrodes, thereby making an outer peripheral part of the preliminarily molded article to a sintered body while an inner peripheral part to a fused glass body.
    Type: Application
    Filed: June 25, 2010
    Publication date: October 6, 2011
    Applicant: SHIN-ETSU QUARTZ PRODUCTS CO., LTD.
    Inventors: Shigeru Yamagata, Tomomi Usui
  • Publication number: 20110232847
    Abstract: Provided is a doped quartz glass member for plasma etching, which is used in a plasma etching process and is free from any problematic fluoride accumulation during use. The quartz glass member for plasma etching is used as a jig for semiconductor production in a plasma etching process, and includes at least two or more kinds of metal elements in a total amount of 0.01 wt % or more to less than 0.1 wt %, in which the metal elements are formed of at least one kind of a first metal element selected from metal elements belonging to Group 3B of the periodic table and at least one kind of a second metal element selected from the group consisting of Mg, Ca, Sr, Ba, Sc, Y, Ti, Zr, Hf, lanthanoids, and actinoids.
    Type: Application
    Filed: July 24, 2008
    Publication date: September 29, 2011
    Applicants: HERAEUS QUARZGLAS GMBH & CO. KG, SHIN-ETSU QUARTZ PRODUCTS CO., LTD.
    Inventors: Tatsuhiro Sato, Kyoichi Inaki
  • Patent number: 7997956
    Abstract: To provide a quartz glass tool, for silicon wafer heat treatment, having a transparent grooving face, which is free from the deposition of particles of a transition metal element foreign material derived from glass dust or diamond blade produced by breakdown of acute irregularities based on opening of very small concaves and convexes and microcracks, causes no significant change in dimension also in cleaning with hydrofluoric acid, and can maintain a high degree of cleanness even after use of a long period of time, and to provide a process for producing the same. A quartz glass tool for silicon wafer heat treatment, comprising a wafer mounting member having a grooving face formed by machining, characterized in that the whole grooving face of the wafer mounting member is transparent, the surface roughness is 0.03 to 0.3 ?m in terms of center line average roughness (Ra) and 0.2 to 3.
    Type: Grant
    Filed: June 1, 2006
    Date of Patent: August 16, 2011
    Assignee: Shin-Etsu Quartz Products Co., Ltd.
    Inventors: Junichi Tsuruzoe, Shinichi Okoshi, Kunihiro Yamasaki
  • Publication number: 20110192758
    Abstract: A method for producing a silica container, the method including forming a preliminarily molded silica substrate to an intended shape by feeding a powdered substrate's raw material (silica particles) to an inner wall of a carbon-made outer frame having aspiration holes with rotating the outer frame, and forming the silica substrate wherein the preliminarily molded substrate is degassed by aspiration from its outer peripheral side with charging from an inner peripheral side of the preliminarily molded silica substrate a reducing gas containing more than 10% by volume of an H2 gas, and at the same time heated from inside the preliminarily molded silica substrate by a discharge-heat melting method with carbon electrodes, thereby making an outer peripheral part of the preliminarily molded silica substrate to a sintered body while an inner peripheral part of the preliminarily molded silica substrate to a fused glass body.
    Type: Application
    Filed: June 1, 2010
    Publication date: August 11, 2011
    Applicant: SHIN-ETSU QUARTZ PRODUCTS CO., LTD.
    Inventors: Shigeru Yamagata, Tomomi Usui
  • Patent number: 7993556
    Abstract: A rotating mold has a plurality of air channels that communicate with a cavity formed in the mold. Silica grain is deposited in the rotating mold and then formed into the shape of a crucible having a lower portion that comprises a substantially uniformly thick wall. An upper portion of the grain is formed into a substantially narrowed wall portion about the perimeter of the formed shape. The silica grain is heated, and a pump draws gas through the air channels while the silica fuses. There is a pressure drop across the narrowed wall portion. After fusing, the upper portion of the crucible, including the narrowed wall portion, is cut off.
    Type: Grant
    Filed: August 8, 2007
    Date of Patent: August 9, 2011
    Assignees: Heraeus Shin-Etsu America, Inc., Shin-Etsu Quartz Products Co., Ltd.
    Inventors: Katsuhiko Kemmochi, Yasuo Ohama
  • Publication number: 20110143063
    Abstract: A method for producing a silica container that includes forming a powder mixture by adding an Al compound or a crystal nucleating agent into a first powdered raw material (silica particles), preliminarily molding to an intended shape by feeding the powder mixture to an inner wall of an outer frame while rotating the outer frame having aspiration holes, forming a silica substrate, wherein the preliminarily molded article is degassed by aspiration from a peripheral side and at the same time heated from inside the preliminarily molded article at high temperature thereby making a peripheral part of the preliminarily molded article to a sintered body while an inner part to a fused glass body, and forming a transparent silica glass layer on an inner surface of the silica substrate, wherein a second powdered raw material having a higher silica purity than the first powdered raw material is spread from inside the silica substrate and at the same time heated from the inside at high temperature.
    Type: Application
    Filed: March 23, 2010
    Publication date: June 16, 2011
    Applicant: SHIN-ETSU QUARTZ PRODUCTS CO., LTD.
    Inventors: Shigeru Yamagata, Tomomi Usui
  • Publication number: 20110120190
    Abstract: A mixed quartz powder contains quartz powder and two or more types of doping element in an amount of from 0.1 to 20 mass %. The aforementioned doped elements include a first dope element selected from the group consisting of N, C and F, and a second dope element selected from the group consisting of Mg, Ca, Sr, Ba, Sc, Y, Ti, Zr, Hf, the lanthanides and the actinides. The “quartz powder” is a powder of crystalline quartz or it is a powder of glassy SiO2 particles. It is made form natural occurring quartz or it is fabricated synthetically. The “quartz powder” may be doped. The compounding ratio of the total amount (M1) of the aforementioned first elements and the total amount (M2) of the aforementioned second elements as the ratio of the number of atoms (M1)/(M2) is preferably from 0.1 to 20. Al as well as the aforementioned doped elements is preferably included in a mixed quartz powder of this invention.
    Type: Application
    Filed: February 8, 2011
    Publication date: May 26, 2011
    Applicants: HERAEUS QUARZGLAS GMBH & CO. KG, SHIN-ETSU QUARTZ PRODUCTS CO., LTD.
    Inventor: Tatsuhiro Sato
  • Publication number: 20110114530
    Abstract: The present invention provides a method for producing a silica container, wherein the method comprises: a step of forming a preliminarily molded substrate, wherein a first powdered raw material (silica particles) is fed to an inner wall of an outer frame having aspiration holes while rotating the outer frame, a step of forming a preliminarily molded intermediate layer, wherein a second powdered raw material (silica particles) added with an aluminum compound or a crystal nucleating agent as an additive is fed to an inner wall of the preliminarily molded substrate, and a step of forming an inner layer, wherein the preliminarily molded substrate and the preliminarily molded intermediate layer are degassed by aspiration from a peripheral side with heating from an inside thereby forming a substrate and an intermediate layer, and while a third powdered raw material having a high silica purity is spread from inside the substrate having the formed intermediate layer with heating from the inside thereby forming an inn
    Type: Application
    Filed: March 24, 2010
    Publication date: May 19, 2011
    Applicant: SHIN-ETSU QUARTZ PRODUCTS CO., LTD.
    Inventors: Shigeru Yamagata, Tomomi Usui
  • Patent number: 7905932
    Abstract: A mixed quartz powder contains quartz powder and two or more types of doping element in an amount of from 0.1 to 20 mass %. The aforementioned doped elements include a first dope element selected from the group consisting of N, C and F, and a second dope element selected from the group consisting of Mg, Ca, Sr, Ba, Sc, Y, Ti, Zr, Hf, the lanthanides and the actinides. The “quartz powder” is a powder of crystalline quartz or it is a powder of glassy SiO2 particles. It is made form natural occurring quartz or it is fabricated synthetically. The “quartz powder” may be doped. The compounding ratio of the total amount (M1) of the aforementioned first elements and the total amount (M2) of the aforementioned second elements as the ratio of the number of atoms (M1)/(M2) is preferably from 0.1 to 20. Al as well as the aforementioned doped elements is preferably included in a mixed quartz powder of this invention.
    Type: Grant
    Filed: August 30, 2007
    Date of Patent: March 15, 2011
    Assignees: Heraeus Quarzglas GmbH & Co. KG, Shin-Etsu Quartz Products Co. Ltd.
    Inventor: Tatsuhiro Sato
  • Publication number: 20100316858
    Abstract: Provided is a method for producing a synthetic opaque quartz glass where flame processing can be performed in high purity with a simple way and even a large sized one can be produced, and the synthetic opaque quartz glass. A method for producing a synthetic opaque quartz glass which comprises the step of heating and burning a quartz glass porous body under a pressure of from 0.15 MPa to 1000 MPa at a temperature of from 1200° C. to 2000° C. The quartz glass porous body is prepared by depositing quartz glass particles which are produced by hydrolyzing a silicon compound with an oxyhydrogen flame.
    Type: Application
    Filed: December 4, 2007
    Publication date: December 16, 2010
    Applicant: SHIN-ETSU QUARTZ PRODUCTS CO., LTD. (SQP)
    Inventors: Tatsuhiro Sato, Nobumasa Yoshida, Katsuhide Orikasa, Makoto Tanaka
  • Patent number: 7841211
    Abstract: First of all, there is provided a production process of a synthetic quartz glass which has less impurity, has a high-temperature viscosity characteristic equal to or more than that of a natural quartz glass, and hardly deforms even in a high-temperature environment, and especially a production process of a highly heat resistant synthetic quartz glass which is free from the generation of bubbles and is dense. Secondly, there is provided a highly heat resistant synthetic quartz glass body which is easily obtained by the production process of the present invention, and especially a transparent or black quartz glass body which is free from the generation of bubbles, is dense, has high infrared absorption rate and emission rate, and has an extremely high effect for preventing diffusion of alkali metal. The process is a process of producing a highly heat resistant quartz glass body having an absorption coefficient at 245 nm of 0.
    Type: Grant
    Filed: November 28, 2003
    Date of Patent: November 30, 2010
    Assignee: Shin-Etsu Quartz Products Co., Ltd.
    Inventors: Tatsuhiro Sato, Takahiro Kaitou, Akira Fujinoki, Toshiyuki Kato, Tohru Segawa, Nobumasa Yoshida
  • Publication number: 20100251770
    Abstract: A process for producing a transparent or opaque silica glass product including mixing a silica fine powder and a cellulose derivative and injection molding the mixture, followed by degreasing treatment and baking treatment, which is characterized in that the cellulose derivative is a cellulose derivative which causes reversible thermal gelation in an aqueous solution of at least one member selected from methyl cellulose, hydroxypropylmethyl cellulose and hydroxyethylmethyl cellulose; in producing a transparent silica glass product, the cellulose derivative is added in water heated at a gelation temperature thereof or higher, and after cooling, the formed aqueous solution is kneaded with the silica fine powder; and in producing an opaque silica glass product, the cellulose derivative is added in a silica slurry containing a silica powder and heated at a gelation temperature of the cellulose derivative or higher.
    Type: Application
    Filed: June 15, 2010
    Publication date: October 7, 2010
    Applicants: Shin-Etsu Quartz Products Co., Ltd., Shin-Etsu Chemical Co., Ltd.
    Inventors: Hiroyuki Watanabe, Akira Fujinoki, Takayuki Imaizumi, Kazuhisa Hayakawa, Shingo Niinobe
  • Patent number: 7790078
    Abstract: A process for producing a transparent or opaque silica glass product including mixing a silica fine powder and a cellulose derivative and injection molding the mixture, followed by degreasing treatment and baking treatment, which is characterized in that the cellulose derivative is a cellulose derivative which causes reversible thermal gelation in an aqueous solution of at least one member selected from methyl cellulose, hydroxypropylmethyl cellulose and hydroxyethylmethyl cellulose; in producing a transparent silica glass product, the cellulose derivative is added in water heated at a gelation temperature thereof or higher, and after cooling, the formed aqueous solution is kneaded with the silica fine powder; and in producing an opaque silica glass product, the cellulose derivative is added in a silica slurry containing a silica powder and heated at a gelation temperature of the cellulose derivative or higher.
    Type: Grant
    Filed: February 9, 2006
    Date of Patent: September 7, 2010
    Assignees: Shin-Etsu Quartz Products Co., Ltd., Shin-Etsu Chemical Co., Ltd.
    Inventors: Hiroyuki Watanabe, Akira Fujinoki, Takayuki Imaizumi, Kazuhisa Hayakawa, Shingo Niinobe
  • Publication number: 20100186662
    Abstract: A fused glass crucible includes a collar of doped aluminum silica that defines uppermost and outermost surfaces of the crucible. The melt line that defines the surface of molten silicon in the crucible may be substantially at the lower end of the collar or slightly above it. Crystallization of the collar makes it hard and therefore supports the remaining uncrystallized portion of the crucible above the melt line. The melt line may also be below the lower end of the collar, especially if the melt is drawn down or poured early in the process. Because there is little or no overlap or because the overlap does not last long, the doped aluminum collar is not damaged by the heat of from the melt.
    Type: Application
    Filed: April 1, 2010
    Publication date: July 29, 2010
    Applicants: HERAEUS SHIN-ETSU AMERICA, INC., SHIN-ETSU QUARTZ PRODUCTS CO., LTD.
    Inventors: Katsuhiko Kemmochi, Yasuo Ohama
  • Publication number: 20100139549
    Abstract: The present invention is a quartz glass crucible 5 for pulling a silicon single crystal, comprising at least an outer layer portion 23 being a translucent glass layer containing multiple bubbles in it and an inner layer portion 24 being a transparent quartz glass layer having no bubbles and a smooth surface, formed on the inner surface of the outer layer portion 23, wherein the outer layer portion 23 contains bubbles of 0.1 to 0.3 mm in diameter at the density of 1.5 to 5.0×104 bubbles/cm3. Thus, there are provided a quartz glass crucible for pulling a silicon single crystal, the quartz glass crucible being increased in mechanical strength, making it possible to suppress deformation of a quartz glass crucible for pulling a silicon single crystal during a single crystal pulling process, thereby prevent degradation in yield rate due to dislocation in a single crystal and make the manufacture of a silicon single crystal highly efficient and a method of manufacturing the same quartz glass crucible.
    Type: Application
    Filed: May 25, 2006
    Publication date: June 10, 2010
    Applicants: SHIN-ETSU HANDOTAI CO., LTD., SHIN-ETSU QUARTZ PRODUCTS CO., LTD.
    Inventors: Masahiro Sakurada, Susumu Sonokawa, Izumi Fusegawa, Hiroshi Matsui
  • Publication number: 20100132609
    Abstract: A quartz glass crucible for silicon single crystal pulling operation that by a simple arrangement, attains prevention of any collapse onto the inside at a superior edge of straight trunk part; and a process for manufacturing the same. The quartz glass crucible for silicon single crystal pulling operation having a straight trunk part and a bottom part, is characterized in that at least the straight trunk part is provided with a gradient of fictive temperature so that the fictive temperature on the outermost side thereof is 25° C. or more lower than the fictive temperature on the innermost side thereof.
    Type: Application
    Filed: May 23, 2008
    Publication date: June 3, 2010
    Applicants: Heraeus Quarzglas GmbH & Co. KG, Shin-Etsu Quartz Products Co., Ltd.
    Inventor: Yasuo Ohama
  • Patent number: 7716948
    Abstract: A fused glass crucible includes a collar of doped aluminum silica that defines uppermost and outermost surfaces of the crucible. The melt line that defines the surface of molten silicon in the crucible may be substantially at the lower end of the collar or slightly above it. Crystallization of the collar makes it hard and therefore supports the remaining uncrystallized portion of the crucible above the melt line. The melt line may also be below the lower end of the collar, especially if the melt is drawn down or poured early in the process. Because there is little or no overlap or because the overlap does not last long, the doped aluminum collar is not damaged by the heat of from the melt.
    Type: Grant
    Filed: December 18, 2006
    Date of Patent: May 18, 2010
    Assignees: Heraeus Shin-Etsu America, Inc., Shin-Etsu Quartz Products Co., Ltd.
    Inventors: Katsuhiko Kemmochi, Yasuo Ohama
  • Publication number: 20100109509
    Abstract: It is an object of the present invention to provide a copper-containing silica glass which emits fluorescence having a peak in a wavelength range of from 520 nm to 580 nm under irradiation of ultraviolet light with a wavelength of 400 nm or less, and which is excellent in long term stability even in the high output use. The copper-containing silica glass is made to have copper of from 5 wtppm to 200 wtppm, which emits fluorescence having a peak in a wavelength range of from 520 nm to 580 nm under irradiation of ultraviolet light with a wavelength ranging from 160 nm to 400 nm, and in which an internal transmittance per 2.5 mm thickness at a wavelength of 530 nm is 95% or more.
    Type: Application
    Filed: April 28, 2008
    Publication date: May 6, 2010
    Applicants: SHIN-ETSU QUARTZ PRODUCTS CO., LTD. (SQP), OPTO-ELECTRONICS LABORATORY, INC.
    Inventors: Tetsuji Ueda, Michinari Ohuchi, Hiroyuki Nishimura, Akira Fujinoki, Masahiro Nakatsuka, Hidetsugu Yoshida
  • Patent number: RE41249
    Abstract: An object of the present invention is to provide a quartz glass body, especially a quartz glass jig for plasma reaction in producing semiconductors having excellent resistance against plasma corrosion, particularly, excellent corrosion resistance against F-based gaseous plasma; and a method for producing the same. A body made of quartz glass containing a metallic element and having an improved resistance against plasma corrosion is provided that contains bubbles and crystalline phase at an amount expressed by projected area of less than 100 mm2 per 100 cm3.
    Type: Grant
    Filed: November 30, 2006
    Date of Patent: April 20, 2010
    Assignees: Heraeus Quarzglas GmbH & Co. KG, Shin-Etsu Quartz Products Co., Ltd.
    Inventors: Tatsuhiro Sato, Nobumasa Yoshida, Akira Fujinoki, Kyoichi Inaki, Tomoyuki Shirai