Abstract: A method for transferring alignment marks between substrate systems includes providing a substrate having semiconductor devices and alignment marks in precise alignment with the semiconductor devices; and physically transferring and bonding the semiconductor devices and the alignment marks to a temporary substrate of a first substrate system. The method can also include physically transferring and bonding the semiconductor devices and the alignment marks to a mass transfer substrate of a second substrate system; and physically transferring and bonding the semiconductor devices and the alignment marks to a circuitry substrate of a third substrate system. A system for transferring alignment marks between substrate systems includes the substrate having the semiconductor devices and the alignment marks in precise alignment with the semiconductor devices. The system also includes the first substrate system, and can include the second substrate system and the third substrate system.

Abstract: In a method of manufacturing porous glass base for optical fiber, a liquid organic siloxane raw material stored in a raw material tank of internal pressure P1 is controlled by a mass flow controller at a predetermined flow rate and pumped through pipe of internal pressure P2 to a vaporizer, the liquid raw material is vaporized in the vaporizer and supplied as a gas raw material to a burner, and the silica fine particles formed by burning the gas raw material in the burner are deposited to form a porous glass base material, where P1?P2 is satisfied.

Abstract: A bio-electrode composition contains: (A) a polymer compound containing a repeating unit-a having a structure selected from the group consisting of salts of ammonium, sodium, potassium, and silver formed with any of fluorosulfonic acid, fluorosulfonimide, and N-carbonyl-fluorosulfonamide; and (B) a silicone compound having a polyglycerin structure. This bio-electrode composition is able to form a living body contact layer for a bio-electrode which enable quick signal collection after attachment to skin.

Abstract: A resist composition is provided comprising a base polymer and a quencher comprising a cyclic ammonium salt having a fluorinated saturated hydrocarbyl group or fluorinated aryl group. The resist composition has a high sensitivity and forms a pattern with improved LWR or CDU, independent of whether it is of positive or negative tone.

Abstract: A composition for forming a silicon-containing resist underlayer film contains at least one or more kinds of a quaternary ammonium salt shown by the following general formula (A-1), and a thermally crosslinkable polysiloxane (Sx), where Ar1 represents an aromatic group having 6 to 20 carbon atoms, or a heteroaromatic group having 4 to 20 carbon atoms. R11 represents an alkyl group, alkenyl group, oxoalkyl group, or oxoalkenyl group having 1 to 12 carbon atoms, an aryl group having 6 to 20 carbon atoms, or an aralkyl group or aryloxoalkyl group having 7 to 12 carbon atoms. Some or all of hydrogen atoms of these groups are optionally substituted. Z? represents an organic or inorganic anion as a counterion of the quaternary ammonium cation. An object is to provide a silicon-containing resist underlayer film having high effect of suppressing ultrafine pattern collapse and appropriate etching rate in multilayer resist methods.

Abstract: A method producing a laminate with a semiconductor film that has a corundum crystal structure, includes the steps of mounting a substrate on a stage; heating the substrate, atomizing a raw material solution for film deposition, forming a gaseous mixture by mixing the atomized raw material solution for film deposition and carrier gas; and forming the film deposition by supplying the gaseous mixture to the substrate, wherein a surface roughness Ra of a contact surface with the substrate on the stage and the contact surface with the stage on the substrate is 0.5 ?m or less. The method produces the laminate capable of stably forming a thick film of a corundum crystal thin film (the semiconductor film having a corundum crystal structure) with excellent crystal orientation and high quality.

Abstract: A sulfonium salt of specific structure has a high decomposition efficiency and a high acid diffusion controlling ability upon exposure. A resist composition comprising the sulfonium salt offers a high sensitivity, reduced LWR and improved CDU independent of whether it is of positive or negative tone.

Abstract: A cosmetic includes the following component (A), the component (A): a hydrosilylated reaction product of an organohydrogen (poly)siloxane (A1) and an organo(poly)siloxane (A2), the hydrosilylated reaction product being an aromatic-group-modified crosslinked organosiloxane, and a ratio between a total number of moles of aryl groups and aralkyl groups and a number of moles of silicon atoms is 0.34 or more. This enables a highly polar oil and an ultraviolet-ray absorbent to be stably blended, and the cosmetic has a good feeling and feel of use.

Abstract: A method for manufacturing a low dielectric silica powder incudes heat-treating a silica powder at a temperature of 500° C. to 1500° C. to achieve 0.0005 or less of a dielectric loss tangent of the silica powder at 10 GHz, and etching a surface of the heat-treated silica powder with an etching solution. A silica powder with an extremely small dielectric loss tangent, a resin composition containing the same, and a method for manufacturing a silica powder with a low dielectric loss tangent and strong adhesion at the interface to resin are achieved.

Abstract: The present invention is an onium salt represented by the following general formula (1), where n1 represents an integer of 0 or 1; n2 represents an integer of 0 to 3; R1a represents a halogen atom or a hydrocarbyl group having 1 to 20 carbon atoms and optionally containing a heteroatom; n3 represents an integer of 0 to 3; R1b represents a hydrocarbyl group having 1 to 36 carbon atoms and optionally containing a heteroatom; n4 represents an integer of 1 or 2; and Z+ represents an onium cation. This provides a novel onium salt to be contained in a resist composition in lithography with a positive or negative resist, and the onium salt has high sensitivity and excellent resolution, can improve LWR and CDU, and can also suppress collapse of a resist pattern.

Abstract: A resist composition comprising a quencher containing a sulfonium salt composed of a C5-C20 aromatic carboxylic acid anion substituted with a halogen atom or a halogen atom-containing group and a sulfonium cation having the following formula (1).

Abstract: An onium salt having formula (1) is provided. A chemically amplified resist composition comprising the onium salt as a PAG has advantages including high solvent solubility, high sensitivity, a high contrast, and improved lithography properties such as EL and LWR when processed by photolithography using high-energy radiation.

Abstract: The present invention is a resist material containing: (i) a metal compound shown by the following general formula (M-1) and (ii) an organic solvent. An object of the present invention is to provide a metal-containing resist material having high sensitivity and high resolution particularly in EUV and electron beam lithography; and a patterning process using this material.

Abstract: A negative resist composition is provided comprising a base polymer and an acid generator in the form of a sulfonium salt consisting of a sulfonate anion having a maleimide group and a cation having a polymerizable double bond. The resist composition adapted for organic solvent development exhibits a high resolution and improved LWR or CDU.

Abstract: The present invention is a positive resist material containing a compound having two or more urethane groups and having two or more carboxy groups that are each substituted with an acid-labile group and are bonded to the urethane groups via a linking group. This provides: a positive resist material that has higher sensitivity and higher resolution than conventional positive resist materials and smaller edge roughness and CDU, and allows excellent pattern profile after exposure to light; and a patterning process.

Abstract: A resist composition comprising a base polymer comprising repeat units having a salt structure consisting of a sulfonic acid anion bonded to a polymer backbone and a sulfonium cation having formula (1).

Abstract: The present invention is an additive for water-based paint, containing a siloxane-branched polyether-modified silicone shown by an average composition formula (1) R1aR2bR3cSiO(4-a-b-c)/2 and having a weight-average molecular weight in a range of 500 to 100,000. In the formula (1), R1 represents an alkyl group, an aryl group, an aralkyl group, or an organic group shown by a general formula (2) —CmH2m—O—(C2H4O)d(C3H6O)eR4. R2 represents a group shown by a general formula (3)—CmH2m—O— (C2H4O)f(C3H6O)g—R5; each R3 represents an organosiloxane shown by the following general formula (4). R4 represents a hydrocarbon group, or an organic group shown by R6—(CO)—. R5 represents a hydrogen atom, a hydrocarbon group, or an organic group shown by R6—(CO)—. R6 represents a hydrocarbon group. The siloxane branched polyether-modified silicone satisfies expressions (I), (II).

Abstract: A positive resist material containing a compound having two or more urethane groups and having a carboxy group and a sulfonium salt or iodonium salt of a sulfonic acid, the carboxy group being substituted with an acid-labile group and being bonded to a first urethane group via a first linking group, and the sulfonium salt or iodonium salt being bonded to a second urethane group directly or via a second linking group. This provides: a positive resist material that has higher sensitivity and higher resolution than conventional positive resist materials and smaller edge roughness and CDU, and allows excellent pattern profile after exposure to light; and a patterning process.

Abstract: The present invention is a paint additive containing a siloxane-branched polyether-modified silicone shown by an average composition formula (1) R1aR2bR3cSiO(4-a-b-c)/2 and having a weight-average molecular weight in a range of 500 to 100,000. In the formula (1), R1 represents an alkyl group, an aryl group, an aralkyl group, or an organic group shown by a general formula (2) —CmH2m—O—(C2H4O)d(C3H6O)eR4. R2 represents a group shown by a general formula (3) —CmH2m—O—(C2H4O)f(C3H6O)g—R5; each R3 represents an organosiloxane shown by the following general formula (4). R4 represents a hydrocarbon group, or an organic group shown by R6—(CO)—. R5 represents a hydrogen atom, a hydrocarbon group, or an organic group shown by R6—(CO)—. R6 represents a hydrocarbon group. Thus, the present invention provides a paint additive and a paint composition with small environmental load and imparting excellent antifouling performance.

Abstract: Provided are a photocatalyst transfer film allowing a uniform and highly transparent photocatalyst layer to be transferred to the surfaces of various transfer base materials; and a production method thereof. The photocatalyst transfer film has, on a biaxially oriented polypropylene film, a photocatalyst layer containing a titanium oxide particle-containing photocatalyst, a silicon compound and a surfactant. The production method of the photocatalyst transfer film includes applying a photocatalyst coating liquid to a biaxially oriented polypropylene film; and performing drying. The photocatalyst coating liquid contains a titanium oxide particle-containing photocatalyst, a silicon compound, a surfactant and an aqueous dispersion medium.