Abstract: A method of operating a bake plate disposed in a semiconductor processing chamber having a face plate opposing the bake plate includes providing a temperature control signal to the bake plate and measuring a face plate temperature associated with the face plate. The method also includes determining a difference between the face plate temperature and a predetermined temperature and modifying the temperature control signal provided to the bake plate in response to the determined difference.

Abstract: The transporting process from cleaning and drying processing of a substrate in a cleaning/drying processing unit in a cleaning/drying processing group to post-exposure bake (PEB) of the substrate in a thermal processing group for post-exposure bake in a cleaning/drying processing block is described below. First, after the substrate after exposure processing is subjected to the cleaning and drying processing in the cleaning/drying processing group, a sixth central robot takes out the substrate from the cleaning/drying processing group and carries that substrate into the thermal processing group for post-exposure bake in the cleaning/drying processing block.

Abstract: A substrate processing system includes a substrate processing apparatus and a cleaning/drying apparatus. The substrate processing apparatus includes an indexer block, an anti-reflection film processing block, a resist film processing block, a development processing block, a resist cover film processing block, a resist cover film removal block and a first interface block. The cleaning/drying apparatus includes a cleaning/drying processing block and a second interface block. An exposure device is arranged adjacent to the second interface block. In the cleaning/drying processing block, cleaning processing is applied to a substrate before exposure processing and drying processing is applied to the substrate after the exposure processing.

Abstract: A substrate processing apparatus comprises an indexer block, an anti-reflection film processing block, a resist film processing block, a development processing block, and an interface block. An exposure device is arranged adjacent to an interface block. The interface block comprises a drying processing group including two drying processing units and an interface transport mechanism. After a substrate is subjected to exposure processing by the exposure device, the substrate is transported to the drying processing units in the drying processing group by the interface transport mechanism, where the substrate is subjected to cleaning and drying processings.

Abstract: A substrate processing apparatus comprises an indexer block, an anti-reflection film processing block, a resist film processing block, a development processing block, and an interface block. An exposure device is arranged adjacent to the interface block. The interface block comprises washing processing units and an interface transport mechanism. Before a substrate is subjected to exposure processing by the exposure device, the substrate is transported to a washing processing unit by the interface transport mechanism. The substrate is washed and dried by the washing processing unit.

Abstract: An integrated thermal unit comprising a bake plate configured to heat a substrate supported on a surface of the bake plate; a chill plate configured to cool a substrate supported on a surface of the chill plate; and a substrate transfer shuttle configured to transfer substrates from the bake plate to the cool plate, wherein the substrate transfer shuttle has a temperature controlled substrate holding surface that is capable of cooling a substrate heated by the bake plate.

Abstract: An apparatus for dispensing fluid during semiconductor substrate processing operations comprises an enclosure having a first side and a second side. The enclosure comprises a first processing station and a second processing station. The second processing station is positioned adjacent to the first processing station. In addition, the substrate processing apparatus includes a first dispense arm configured to deliver a fluid to the first processing station wherein the first dispense arm is positioned between the first side and the first processing station and a second dispense arm configured to deliver the fluid to the second processing station wherein the second dispense arm is positioned between the second side and the second processing station. The substrate processing apparatus also comprises a first rinse arm configured to deliver a rinsing fluid to the first processing station and a second rinse arm configured to deliver the rinsing fluid to the second processing station.

Abstract: A method of processing a substrate in a substrate processing apparatus that is arranged adjacent to an exposure device and includes first, second and third processing units, includes forming a photosensitive film on the substrate by said first processing unit before exposure processing by said exposure device and applying washing processing to the substrate by supplying a washing liquid to the substrate in said second processing unit after the formation of said photosensitive film and before the exposure processing. The method also includes applying drying processing to the substrate in said second processing unit after the washing processing by said second processing unit and before the exposure processing and applying development processing to the substrate by said third processing unit after the exposure processing. Applying the drying processing to the substrate includes the step of supplying an inert gas onto the substrate, to which the washing liquid is supplied.

Abstract: A method of processing a substrate in a substrate processing apparatus that is arranged adjacent to an exposure device and includes first, second and third processing units, includes the steps of: forming a photosensitive film made of a photosensitive material on the substrate by said first processing unit before exposure processing by said exposure device. The method also includes applying washing processing to the substrate by said second processing unit after the formation of said photosensitive film by said first processing unit and before the exposure processing by said exposure device and transporting the substrate after the washing processing to said exposure device. The method further includes transporting the substrate from said exposure device and applying development processing by said third processing unit to the substrate transported after the exposure processing by said exposure device.

Abstract: A substrate processing apparatus comprises an indexer block, an anti-reflection film processing block, a resist film processing block, a development processing block, a resist cover film processing block, a resist cover film removal block, and an interface block. An exposure device is arranged adjacent to the interface block. A resist film is formed on a substrate in the resist film processing block. A resist cover film is formed on the resist film in the resist cover film processing block before the substrate is subjected to exposure processing by the exposure device.

Abstract: A method of processing a substrate subjected to an exposure process includes the steps of: transporting a substrate subjected to the exposure process to a cleaning processing part and performing a cleaning process in said cleaning processing part on said substrate subjected to the exposure process. The method also includes the steps of transporting said substrate subjected to the cleaning process from said cleaning processing part to a heating processing part and performing a heating process in said heating processing part on said substrate subjected to the cleaning process. A first interprocess time interval between the instant at which the exposure process of a substrate is completed and the instant at which the heating process of the substrate is started is made approximately constant, and a second interprocess time interval between the instant at which the cleaning process of the substrate is completed and the instant at which the heating process of the substrate is started is made approximately constant.

Abstract: A method of processing a substrate in a substrate processing apparatus that is arranged adjacent to an exposure device and includes first, second and third processing units, includes the steps of forming a film made of a photosensitive material on the substrate by said first processing unit before exposure processing by said exposure device.

Abstract: A substrate processing apparatus comprises an interface block. An exposure device is arranged adjacent to the interface block. The interface block comprises first and second cleaning/drying processing units. A substrate W is subjected to cleaning and drying processing before exposure processing in the first cleaning/drying processing unit, while being subjected to cleaning and drying processing after the exposure processing in the second cleaning/drying processing unit.

Abstract: Embodiments generally provide an apparatus and method for processing substrates using a multi-chamber processing system (e.g., a cluster tool) that has an increased system throughput, increased system reliability, substrates processed in the cluster tool have a more repeatable wafer history. In one embodiment, non-orthogonal robot trajectories are used to assure reliable and high speed substrate transfer. In another embodiment, at least one buffering station is used to avoid collision and improve throughput. In another embodiment, optimal positioning of the robots are used to improve throughput.

Abstract: A substrate processing apparatus comprises an indexer block, an anti-reflection film processing block, a resist film processing block, a development processing block, a resist cover film processing block, a resist cover film removal block, and an interface block. An exposure device is arranged adjacent to the interface block. The interface block includes a substrate replacement group. The substrate replacement group has a stack of three cleaning/drying processing units. The cleaning/drying processing unit subjects the substrate after exposure processing to cleaning and drying processing.

Abstract: A substrate processing apparatus comprises an indexer block, an anti-reflection film processing block, a resist film processing block, a development processing block, a resist cover film processing block, a resist cover film removal block, a cleaning/drying processing block and an interface block. These blocks are arranged in the substrate processing apparatus in the above order. An exposure device is arranged adjacent to the interface block of the substrate processing apparatus. A hydrophobic processing unit is arranged in the resist cover film processing block and applies hydrophobic processing to the substrate before exposure processing.

Abstract: A substrate processing apparatus comprises an indexer block, an anti-reflection film processing block, a resist film processing block, a development processing block, a resist cover film processing block, a resist cover film removal block, a cleaning/drying processing block, and an interface block. An exposure device is arranged adjacent to the interface block in the substrate processing apparatus. The exposure device subjects a substrate to exposure processing by means of an immersion method. In the edge cleaning unit in the cleaning/drying processing block, a brush abuts against an end of the rotating substrate, so that the edge of the substrate before the exposure processing is cleaned. At this time, the position where the substrate is cleaned is corrected.

Abstract: A substrate processing apparatus includes an indexer block, an anti-reflection film processing block, a resist film processing block, a development processing block, a resist cover film processing block, a resist cover film removal block, and an interface block. The interface block includes a bevel portion inspection unit. The bevel portion inspection unit inspects a bevel portion of a substrate to determine whether or not the bevel portion of the substrate is contaminated. The substrate whose bevel portion is determined to be contaminated and the substrate whose bevel portion is determined that it is not contaminated are respectively subjected to different types of processing.

Abstract: A substrate processing apparatus arranged adjacent to an exposure device includes a processing section that subjects a substrate to processing and an interface provided adjacent to one end of the processing section configured to transfer and receive the substrate between the processing section and the exposure device. The processing section includes a photosensitive film formation unit configured to form a photosensitive film composed of a photosensitive material on the substrate that has not been subjected to exposure processing by the exposure device, a top surface and edge cleaning unit configured to clean a top surface and an edge of the substrate, and a development unit configured to subject the substrate to development processing after the exposure processing by the exposure device.

Abstract: A method of controlling wafer critical dimension (CD) uniformity on a track lithography tool includes obtaining a CD map for a wafer. The CD map includes a plurality of CD data points correlated with a multi-zone heater geometry map. The multi-zone heater includes a plurality of heater zones. The method also includes determining a CD value for a first heater zone of the plurality of heater zones based on one or more of the CD data points and computing a difference between the determined CD value for the first heater zone and a target CD value for the first heater zone. The method further includes determining a temperature variation for the first heater zone based, in part, on the computed difference and a temperature sensitivity of a photoresist deposited on the wafer and modifying a temperature of the first heater zone based, in part, on the temperature variation.