Abstract: A thermal processing unit of a thermal processor for anti-reflection films includes: a covering nozzle for covering a substrate from above supported by a thermal processing plate and discharging an adhesion enhancing agent to a periphery of a substrate supported by the thermal processing plate; and a vaporization processor for supplying an adhesion enhancing agent in the vapor phase to the covering nozzle. While a substrate placed over the thermal processing plate is being subjected to thermal process, a control part causes the covering nozzle to discharge an adhesion enhancing agent in the vapor phase onto a periphery of a substrate to realize adhesion enhancement process. Thus, the adhesion between a resist coating film and a substrate surface in the periphery of a substrate is enhanced. Further, parallel implementation of thermal process and adhesion enhancement process exerts no influence on throughput.

Abstract: A substrate processing apparatus comprises an indexer block, an edge-cleaning processing block, an anti-reflection film processing block, a resist film processing block, a development processing block, a resist cover film processing block, a resist cover film removal block, a cleaning/drying processing block and an interface block. An exposure device is arranged adjacent to the interface block of the substrate processing apparatus. In the exposure device, exposure processing is applied to a substrate by a liquid immersion method. In the edge-cleaning processing group in the edge-cleaning processing block, an edge of the substrate before exposure processing is cleaned.

Abstract: An integrated thermal unit comprising a bake plate configured to heat a substrate supported on a surface of the bake plate; a chill plate configured to cool a substrate supported on a surface of the chill plate; and a substrate transfer shuttle configured to transfer substrates from the bake plate to the cool plate, wherein the substrate transfer shuttle has a temperature controlled substrate holding surface that is capable of cooling a substrate heated by the bake plate.

Abstract: A method of processing a substrate includes forming a first layer having a photosensitive response to incident radiation on the substrate, forming a first pattern in the first layer, and exposing the first pattern to ultra-violet radiation. The exposure of the first pattern to ultra-violet radiation increases the resistance of the first pattern to a developer. The method also includes forming a conformal protective layer over the first pattern and at least a portion of the substrate. The method further includes forming a second layer having a photosensitive response to incident radiation over the conformal protective layer and forming a second pattern in the second layer.

Abstract: An apparatus and method for measuring a height of an object above a surface includes a housing with a first portion having an upper surface and a lower surface and an extension portion extending a first distance from the lower surface of the first portion. The extension portion defines a cavity opposing the lower surface of the first portion. The apparatus further includes one or more actuators passing through the lower surface of the first portion of the housing and extending into the cavity. Additionally, the apparatus includes a plate supported by one or more flexible members coupled to the extension portion. The plate has a top surface and a bottom surface that lies in a plane substantially parallel to the surface. Moreover, the apparatus includes a plurality of sensors disposed at predetermined positions of the plate. Each of the plurality of sensors is responsive to a height measured between each of the plurality of sensors and the surface.

Abstract: An apparatus for supporting a substrate during semiconductor processing includes a substrate support structure having a first surface, a second surface opposing the first surface, and a groove recessed into the first surface and defining a peripheral portion of the substrate support structure. The substrate support structure is substantially free of guide pins. The apparatus also includes an annular sealing member coupled to the groove and a plurality of proximity pins projecting to a first height above the first surface. The apparatus further includes a plurality of purge ports passing from the second surface to the first surface, a plurality of vacuum ports passing from the second surface to the first surface, and a heating mechanism coupled to the substrate support structure.

Abstract: A fluid supply pipe is inserted through a motor supporting member, a spin motor, a rotating shaft, and a plate supporting member. A first flange is integrally formed in the vicinity of a curved portion of a straight portion, extending in the vertical direction, of the fluid supply pipe. The first flange is fixed to a motor supporting member. Thus, the fluid supply pipe is fixed to the spin motor through the motor supporting member. The fluid supply pipe has a configuration in which a gas supply pipe made of resin and a plurality of cleaning liquid supply pipes made of resin are accommodated inside a guide pipe made of stainless. Inside the guide pipe, the one gas supply pipe is surrounded by the plurality of cleaning liquid supply pipes.

Abstract: A substrate treating apparatus for treating substrates includes a plurality of substrate treatment lines arranged vertically for carrying out plural types of treatment on the substrates while transporting the substrates substantially horizontally, and a controller for changing processes of treatment carried out on the substrates for each of the substrate treatment lines. By changing the processes of treatment carried out for the substrates for each substrate treatment line, the processes of treatment carried out for the substrates can be changed for each substrate conveniently. Thus, a plurality of different processes of treatment corresponding to the number of substrate treatment lines can be carried out in parallel for the respective substrates.

Abstract: A treating section has substrate treatment lines arranged one over the other for treating substrates while transporting the substrates substantially horizontally. An IF section transports the substrates fed from each substrate treatment line to an exposing machine provided separately from this apparatus. The substrates are transported to the exposing machine in the order in which the substrates are loaded into the treating section. The throughput of this apparatus can be improved greatly, without increasing the footprint, since the substrate treatment lines are arranged one over the other. Each substrate can be controlled easily since the order of the substrates transported to the exposing machine is in agreement with the order of the substrates loaded into the treating section.

Abstract: The invention provides coating units, heat-treating units, and a first main transport mechanism for transporting substrates to each of these treating units. The substrates are transferred from the first main transport mechanism to a second main transport mechanism through a receiver. When a substrate cannot be placed on the receiver, this substrate is placed on a buffer. Thus, the first main transport mechanism can continue transporting other substrates. The other substrates in the treating units are transported between the treating units without delay, to receive a series of treatments including coating treatment and heat treatment as scheduled. This prevents lowering of the quality of treatment for forming film on the substrates.

Abstract: A treating section includes a plurality of treating blocks juxtaposed horizontally. Each treating block is vertically divided into stories. Each story includes treating units and a main transport mechanism. Substrates are transportable between the same stories of the treating blocks. Further, the substrates are transportable between different stories. Thus, the apparatus can transport the substrates flexibly between the treating blocks.

Abstract: A substrate treating apparatus includes substrate treatment lines arranged one over another, each for treating substrates while transporting the substrates substantially horizontally. The apparatus further includes an interface section for transporting the substrates between the substrate treatment lines and an exposing machine having a plurality of exposing stages, the exposing machine being provided separately from the apparatus, and a controller for controlling transport of the substrates in the interface section to cause all the substrates similarly treated in each of the substrate treatment lines to be exposed on one of the exposing stages. This apparatus can uniform the quality of treatment among a plurality of substrates receiving the same type of treatment in the same substrate treating line.

Abstract: A method of controlling wafer critical dimension (CD) uniformity on a track lithography tool includes obtaining a CD map for a wafer. The CD map includes a plurality of CD data points correlated with a multi-zone heater geometry map. The multi-zone heater includes a plurality of heater zones. The method also includes determining a CD value for a first heater zone of the plurality of heater zones based on one or more of the CD data points and computing a difference between the determined CD value for the first heater zone and a target CD value for the first heater zone. The method further includes determining a temperature variation for the first heater zone based, in part, on the computed difference and a temperature sensitivity of a photoresist deposited on the wafer and modifying a temperature of the first heater zone based, in part, on the temperature variation.

Abstract: A substrate processing apparatus is configured to provide in series a plurality of processing blocks, each block including a processing unit and a transport robot transporting a substrate. A substrate rest is provided in a connecting portion of adjacent processing blocks. A sensor plate with sensor coils is provided spanning over support pins of the substrate rest. Once a temperature-measurement substrate with temperature-measuring elements, each element formed by connecting a coil to a quartz resonator, is placed on the support pins, a transmitter-receiver transmits transmission waves corresponding to the characteristic frequencies of the quartz resonators to the temperature-measuring elements through the sensor coils. After the stop of the transmission, the transmitter-receiver receives electromagnetic waves from the temperature-measuring elements through the sensor coils, and the temperature computer computes the substrate temperature based on the frequencies of the electromagnetic waves.

Abstract: When a substrate is subjected to bevel cleaning processing, a first magnet plate is arranged at a lower position, and a second magnet plate is arranged at an upper position. In this case, each of chuck pins enters a closed state in a region outside the first magnet plate, while entering an opened state in a region outside the second magnet plate. That is, a holder in each of the chuck pins is maintained in contact with an outer edge of the substrate when it passes through the region outside the first magnet plate, while being spaced apart from the outer edge of the substrate when it passes through the region outside the second magnet plate.

Abstract: An apparatus for centering a substrate in a track lithography tool includes a processing chamber having an opening large enough to admit the substrate. The processing chamber includes a substrate support member. The substrate is characterized by a diameter and comprises a mounting surface, a process surface, and an edge. The apparatus also includes a clamped robot blade including a substrate support surface adapted to support the mounting surface of the substrate, two edge contact regions, and a base contact region. The clamped robot blade also includes a clamping system adapted to move at least one of the two edge contact regions or the base contact region from an unclamped position to a clamped position, thereby making contact between the edge of the substrate and the two edge contact regions and the base contact region in the clamped position. The apparatus further includes a robot arm coupled to the clamped robot blade.

Abstract: A method of clamping/declamping a semiconductor wafer on an electrostatic chuck in ambient air includes disposing the semiconductor wafer at a predetermined distance above a dielectric surface of the electrostatic chuck having one or more electrodes and applying a first voltage greater than a predetermined threshold to the one or more electrodes of the electrostatic chuck for a first time period. The method includes reducing the first voltage to a second voltage substantially equal to a self bias potential of the semiconductor wafer after the first time period. The method includes maintaining the second voltage for a second time period and adjusting the second voltage to a third voltage characterized by a polarity opposite to that of the first voltage and a magnitude smaller than the predetermined threshold. The method includes reducing the third voltage to a fourth voltage substantially equal to the second voltage after a third time period.

Abstract: An apparatus for processing a peripheral portion of a substrate includes a housing and a spin chuck mounted within the housing and configured to support the substrate in a substantially horizontal orientation. The apparatus also includes a fluid dispense nozzle coupled to the housing and proximate to the peripheral portion of the substrate. The fluid dispense nozzle is in fluid communication with a source of a chemical and configured to direct a flow of the chemical to the peripheral portion of the substrate located at a first radial distance from a center of the substrate. The apparatus further includes a light guide optically coupled to a laser source. The light guide is configured to direct radiation to the peripheral portion of the substrate located at a second radial distance from the center of the substrate greater than the first radial distance.

Abstract: A developing apparatus disclosed includes a spin chuck for spinnably holding a substrate, a developer nozzle having a plurality of exhaust ports arranged in a row for discharging a developer, the developer nozzle causing the developer discharged from the exhaust ports to impinge in separate streams on the substrate, a horizontal movement mechanism for moving the developer nozzle in one direction extending to the center of the substrate in plan view while maintaining a direction of arrangement of the exhaust ports in the one direction, thereby to move the developer nozzle between substantially the center and an edge of the substrate in plan view, and a controller for controlling the spin chuck and horizontal movement mechanism to cause the separate streams of the developer discharged from the exhaust ports to impinge spirally on the substrate, thereby to develop the substrate.

Abstract: An apparatus adapted to detect a particle present on a bevel of a wafer. The apparatus includes a substrate support and a sensor housing adapted to receive an edge of the wafer. The sensor housing includes one or more probe electrodes and one or more position sensors. The apparatus also includes a translatable stage coupled to the sensor housing. The translatable stage is adapted to control the distance between the bevel of the wafer and the one or more position sensors. The apparatus further includes electrical circuitry electrically coupled to the substrate support and the one or more probe electrodes and adapted to generate an electric field between the bevel of the wafer and the one or more probe electrodes, detection circuitry electrically coupled to the electrical circuitry, and a processor adapted to process electrical signals and thereby detect the particle present on the bevel of the wafer.