Abstract: An electrochemical deposition method to form uniform and continuous Group IIIA material rich thin films with repeatability is provided. Such thin films are used in fabrication of semiconductor and electronic devices such as thin film solar cells. In one embodiment, the Group IIIA material rich thin film is deposited on an interlayer that includes 20-90 molar percent of at least one of In and Ga and at least 10 molar percent of an additive material including one of Cu, Se, Te, Ag and S. The thickness of the interlayer is adapted to be less than or equal to about 20% of the thickness of the Group IIIA material rich thin film.

Abstract: Described are embodiments including an apparatus that provides a thin film solar cell base structure for a photovoltaic device, a method of manufacturing a photovoltaic device, a roll to roll method of manufacturing a thin film solar cell base structure, and a ruthenium alloy sheet material.

Abstract: The present invention provides a method to form Group IBIIIAVIA solar cell absorber layers on continuous flexible substrates. In a preferred aspect, the method forms a Group IBIIIAVIA absorber layer for manufacturing photovoltaic cells by providing a workpiece having a precursor layer formed over a substrate, the precursor layer including copper, indium, gallium, selenium and a dopant of a Group IA material; heating the precursor layer to a first temperature; reacting the precursor layer at the first temperature for a first predetermined time to transform the precursor layer to a partially formed absorber structure; cooling down the partially formed absorber structure to a second temperature, wherein both the first temperature and the second temperature are above 400° C.; and reacting the partially formed absorber structure at the second temperature for a second predetermined time, which is longer than the first predetermined time, to form a Group IBIIIAVIA absorber layer.

Abstract: The present invention provides a reactor for preparing thin films of compound semiconductors for photovoltaic devices. The reactor includes a chamber that has a bottom surface that, in some locations, has protrusions that contact the bottom surface of the substrate having the compound semiconductor to provide uniform heating and cooling of the substrate. Interior walls of the chamber can also be lined with high thermal conductivity portions and low thermal conductivity portions interposed between high thermal conductivity portions.

Abstract: The present invention provides methods and systems of reacting a precursor material disposed on a continuous flexible workpiece to form a solar cell absorber. The reactor is configured to have a uniform transition in cross-sectional area from a gas inlet into a reaction space and then a uniform transition in cross-sectional area from the reaction area to a gas outlet. The uniform transition reduces gas turbulence. The continuous flexible workpiece may also be positioned on a floor that is configured to reduce turbulence adjacent the lateral edges of the continuous flexible workpiece.

Abstract: A multilayer structure to form absorber layers for solar cells. The multilayer structure includes a base comprising a contact layer on a substrate layer, a first layer on the contact layer, and a metallic layer on the first layer. The first layer includes an indium-gallium-selenide film and the gallium to indium molar ratio of the indium-gallium-selenide film is in the range of 0 to 0.8. The metallic layer includes gallium and indium without selenium. Additional selenium is deposited onto the metallic layer before annealing the structure for forming an absorber.

Abstract: A method of forming a Group IBIIIAVIA solar cell absorber, which includes a top surface region of less than or equal to 300 nm depth. The Ga/(Ga+In) molar ratio within the top surface region is in the range of 0.1-0.3. The Group IBIIIAVIA solar cell absorber is formed by reacting the layers of a multilayer material structure which includes a metallic film including at least Cu and In formed on a base, a separator layer including Se is formed on the metallic film, a metallic source layer substantially including Ga formed on the separator layer, and a cap layer substantially including Se formed on the source layer.

Abstract: An electrochemical co-deposition method and solution to plate uniform, defect free and smooth (In,Ga)—Se films with repeatability and controllable molar ratios of (In,Ga) to Se are provided. Such layers are used in fabrication of semiconductor and electronic devices such as thin film solar cells. In one embodiment, the present invention provides an alkaline electrodeposition solution that includes an In salt, a Se acid or oxide, a tartrate salt as complexing agent for the In species, and a solvent to electrodeposit an In—Se film possessing sub-micron thickness on a conductive surface.

Abstract: A deposition method which deposits a CdS buffer layer on a surface of a solar cell from a process solution including all chemical components of the CdS buffer layer material. CdS is deposited in a deposition chamber by heating the surface of the solar cell absorber to cause the transfer of heat from the solar cell absorber layer to at least a portion of the process solution that is in contact with the surface. Used solution is cooled, and replenished in a solution container and redirected into the deposition chamber.

Abstract: The present invention provides methods of electroplating a film or films onto a top surface of a continuously moving roll-to-roll sheet. In one aspect, the invention includes continuously electroplating a film onto a conductive surface using an electroplating unit as the roll-to-roll sheet moves therethrough.

Abstract: A solar module includes a protective shell with at least two sealed sections formed by moisture barrier sealants. Each sealed section is separated from the adjacent sections and includes at least a portion of a solar cell. In this sectioned configuration, any local defect through the protective shell will only affect the performance of the portions of the solar cells within a particular section that contains this defect and will not affect the portions of the solar cells that are in other sections.

Abstract: A system and method of forming a thin film solar cell with a metallic foil substrate are provided. After forming a semiconductor absorber film over the front surface of the metallic foil substrate a back surface of the metallic foil substrate is treated using a material removal process to form a treated back surface in a process chamber. In one embodiment, the material removal process is performed while depositing a transparent conductive layer over the semiconductor absorber film in the process chamber.

Abstract: A flexible solar cell assembly having solar cells that are positioned within a sealed module chamber. A sealed wiring chamber is positioned on an end of the sealed module chamber and is interposed between the sealed module chamber and a junction box. Wiring interconnecting the junction box to the solar cells in the sealed module chamber is routed through the sealed wiring chamber to inhibit water entry into the sealed module chamber via the wiring.

Abstract: A solar cell module that has a back protective sheet and a front transparent protective sheet and edge sealant members that seal an inner portion of the solar cell module so as to define a cavity that receives a plurality of solar cells. A portion of the back protective sheet extends beyond the sealant members so as to define a mounting region that can receive mounting structures such as holes, connectors, rails or the like. By providing the mounting region, the mounting structures can be spaced from the sealant members which limits the damage to the sealant members during the mounting process and preserves the moisture sealed state of the solar cell cavity.

Abstract: A method and system to modify a surface composition of thin film Group IBIIIA VIA solar cell absorbers having non-uniformly distributed Group IIIA materials or graded materials, such as Indium (In), gallium (Ga) and aluminum (Al). The graded materials distribution varies between the surface and the bottom of the absorber layer such that a molar ratio of (Ga+Al)/(Ga+Al+In) is the highest at the bottom of the absorber layer and the lowest at the surface of the absorber. Within the bulk of the absorber, the molar ratio gradually changes between the bottom and the surface of the absorber. In one embodiment, the surface composition of a graded absorber layer may be modified by removing a top portion or slice of the absorber layer, where the molar ratio is low so as to expose the inner portions of the absorber layer having a higher molar ratio of graded materials.

Abstract: The present invention advantageously provides for, in different embodiments, low-cost deposition techniques to form high-quality, dense, well-adhering Group IBIIIAVIA compound thin films with macro-scale as well as micro-scale compositional uniformities. In one embodiment, there is provided a method of growing a Group IBIIIAVIA semiconductor layer on a base, and includes the steps of depositing on the base a film of Group IB material and at least one layer of Group IIIA material, intermixing the film of Group IB material and the at least one layer of Group IIIA material to form an intermixed layer, and forming over the intermixed layer a metallic film comprising at least one of a Group IIIA material sub-layer and a Group IB material sub-layer. Other embodiments are also described.

Abstract: A method of forming a doped Group IBIIIAVIA absorber layer for solar cells by reacting a partially reacted precursor layer with a dopant structure. The precursor layer including Group IB, Group IIIA and Group VIA materials such as Cu, Ga, In and Se are deposited on a base and partially reacted. After the dopant structure is formed on the partially reacted precursor layer, the dopant structure and partially reacted precursor layer is fully reacted. The dopant structure includes a dopant material such as Na.

Abstract: A method and a system are provide for forming planar precursor structures which are subsequently converted into thin film solar cell absorber layers. A precursor structure is first formed on the front surface of the foil substrate and then planarized through application of force or pressure by a smooth surface to obtain a planar precursor structure. The precursor structure includes at least one of a Group IB material, Group IIIA material and Group VIA material. The planar precursor structures are reacted to form planar and compositionally uniform thin film absorber layers for solar cells.

Abstract: Two or more solar cells are shingled together. At least one solar cell has a contact formed on a first surface that is electrically connected to the conductive terminal of the solar cell. A substrate of a second cell is physically and electrically coupled to the contact. An insulator is interposed between the substrate of the second cell and the first cell to inhibit short circuits therebetween.

Abstract: A system and method for mounting flexible sheets containing solar cells adjacent the rooftop of a building. A plurality of support members are mounted to the building so that holes are not formed in the rooftop to mount the support members. Wires are then extended between the support members and the flexible sheets containing the solar cells are then mounted to the wires.