Abstract: The present invention provides methods of manufacturing a high efficiency solar cell. In one embodiment, in a solar cell having a grid pattern that channels current, a defect causes an undesired current flow is removed by mechanically removing a portion of the grid pattern, thereby passivating the defect by removing a segment of the solar cell adjacent the defect. The segment also includes the front and back portions of the solar cell at the location of the defect without including the defect.

Abstract: The present invention provides a method and precursor structure to form a Group IBIIIAIVA solar cell absorber layer. The method includes forming a Group IBIIIAVIA compound layer on a base by forming a precursor layer on the base through electrodepositing three different films, and then reacting the precursor layer with selenium to form the Group IBIIIAVIA compound layer on the base. The three films, described by the precursor layer, include in one embodiment a first alloy film comprising copper, indium and gallium, a second alloy film comprising copper and selenium formed on the first alloy film; and a selenium film formed on the second alloy film.

Abstract: The present inventions generally relate to thin film solar cell fabrication, and more particularly, to techniques for interconnecting solar cells based on Group IBIIIAVIA thin film semiconductors. In a particular embodiment, a system is described that positions solar cells and conductive leads with respect to each other so that application of a conductive adhesive and formation of an assembled solar cell string, followed by curing and cooling of the conductive adhesive, can occur in a repeatable manner.

Abstract: The present inventions relate to methods and apparatus for detecting and mechanically removing defects and a surrounding portion of the photovoltaic layer and the substrate in a thin film solar cell such as a Group IBIIIAVIA compound thin film solar cell to improve its efficiency.

Abstract: The inventions described herein generally relate to photovoltaic or solar module design and fabrication and, more particularly, to modules utilizing thin film solar cells. In one aspect is described a solar module and method of making the same that has a shield material that is both an electrical insulator and a moisture barrier provided at a location corresponding to at least one hole that is used to route a wiring member, such that the shield material seals the at least one hole against moisture entering into the internal space and electrically insulates the wires of the wiring member from the at least one metallic layer of the back protective sheet.

Abstract: The present invention provides module structures and methods of manufacturing rigid or flexible photovoltaic modules employing thin film solar cells fabricated on flexible substrates, preferably on flexible metallic foil substrates. The solar cells may be Group IBIIIAVIA compound solar cells or amorphous silicon solar cells fabricated on thin stainless steel or aluminum alloy foils. In one embodiment, initially a solar cell string including two or more solar cells is formed by interconnecting the solar cells with conductive leads or ribbons. At least one bypass diode electrically connects conductive back surfaces of at least two solar cells. The bypass diode and the solar cells are encapsulated with support material and are packed with the protective shell such that the at least one bypass diode is placed between at least one solar cell and the bottom protective sheet.

Abstract: The present invention relates to methods and apparatus for providing composition control to thin compound semiconductor films for radiation detector and photovoltaic applications. In one aspect of the invention, there is provided a method in which the molar ratio of the elements in a plurality of layers are detected so that tuning of the multi-element layer can occur to obtain the multi-element layer that has a predetermined molar ratio range. In another aspect of the invention, there is provided a method in which the thickness of a sub-layer and layers thereover of Cu, In and/or Ga are detected and tuned in order to provide tuned thicknesses that are substantially the same as pre-determined thicknesses.

Abstract: The present invention advantageously provides for, in different embodiments, low-cost deposition techniques to form high-quality, dense, well-adhering Group IBIIIAVIA compound thin films with macro-scale as well as micro-scale compositional uniformities. It also provides methods to monolithically integrate solar cells made on such compound thin films to form modules. In one embodiment, there is provided a method of growing a Group IBIIIAVIA semiconductor layer on a base, and includes the steps of depositing on the base a nucleation and/or a seed layer and electroplating over the nucleation and/or the seed layer a precursor film comprising a Group IB material and at least one Group IIIA material, and reacting the electroplated precursor film with a Group VIA material. Other embodiments are also described.

Abstract: A reactor to anneal a workpiece including a precursor material deposited over a flexible substrate is provided. The anneal process transforms the precursor material into a solar cell absorber when the workpiece is advanced through a process gap of the reactor. The process gap is defined by a peripheral wall including a top wall, a bottom wall and side walls. An exhaust opening located between the entrance and exit openings to remove gases from the continuous process gap. At least one roller having a rotational axis that is substantially transverse to the process direction and which has an outer roller surface disposed at least partially below the top wall of the continuous process gap forms a reduced gap between the outer surface of the roller and the bottom wall.

Abstract: The present invention provides a method and precursor structure to form a solar cell absorber layer. The method includes electrodepositing a first layer including a film stack including at least a first film comprising copper, a second film comprising indium and a third film comprising gallium, wherein the first layer includes a first amount of copper, electrodepositing a second layer onto the first layer, the second layer including at least one of a second copper-indium-gallium-ternary alloy film, a copper-indium binary alloy film, a copper-gallium binary alloy film and a copper-selenium binary alloy film, wherein the second layer includes a second amount of copper, which is higher than the first amount of copper, and electrodepositing a third layer onto the second layer, the third layer including selenium; and reacting the precursor stack to form an absorber layer on the base.

Abstract: The present inventions relate to selenium containing electrodeposition solutions used to manufacture solar cell absorber layers. In one aspect is described an electrodeposition solution to electrodeposit a Group IB-Group VIA thin film that includes a a solvent; a Group IB material source; a Group VIA material source; and at least one complexing that forms a complex ion of the Group IB material. Also described are methods of electroplating using electrodeposition solutions.

Abstract: The present invention provides a roll to roll system and a method to sputter deposit various conductive films on a back surface and a front surface of a continuous substrate to form protected base structures for Group IBIIIAVIA thin film solar cells. In one embodiment of the invention, a back protection film is sputter deposited onto the entire back side of the substrate in a first deposition station without transferring heat from the substrate. Next, a first front film is sputter deposited in a second deposition station to partially cover the front side of the substrate while heat is transferred from substrate by a cooling surface of a cooling mechanism in the second deposition station. The second film does not cover the edges of the substrate to avoid contaminating the cooling surface with the depositing material. Other embodiments are directed to specifics regarding the depositing of these films, adding other films, and a system for depositing the films.

Abstract: The present invention provides methods and apparatus for deposition of contact layers for Group IBIIIAVIA solar cells using electrodeposition and/or electroless deposition approaches, and solar cells that result therefrom. In one aspect of the invention, the solar cell that results includes a substrate, a stacked contact layer that includes a bottom film coated on a surface of the substrate and a top film formed by electroplating over the bottom film, wherein the top film comprises at least one of Ru, Ir and Os. A Group IBIIIAVIA compound film formed over the top film. In another aspect of the invention, there is provided a method of depositing a stacked layer of a plurality of films in a plurality of sequentially disposed depositing units onto a continuously moving roll-to-roll sheet, preferably using electroplating of a stacked contact layer.

Abstract: Embodiments of the present inventions provide structures and methods for manufacturing high electrical conductivity grid patterns having minimum shadowing effect on the illuminated side of the solar cells. To manufacture a conductive grid for a solar cell, a first conductive layer is initially formed over a transparent conductive oxide layer of a solar cell. The first conductive layer has a pattern including a busbar and fingers connected to the busbar. Next, a second conductive layer is formed on the first conductive layer. In one embodiment, the first conductive layer includes silver and the second conductive layer includes carbon nano tube material, or the first conductive layer includes carbon nano tube material and the second conductive layer includes silver.

Abstract: The present invention relates to systems and methods for preparing metallic precursor thin films for the growth of semiconductor compounds to be used for radiation detector and solar cell fabrication. In one aspect, there is provided a method of efficiently using expensive materials necessary for the making of solar cells.

Abstract: A system is described to deposit a buffer layer onto exposed surfaces of two different solar cell absorber layers of two different flexible workpieces from a process solution including all chemical components of the buffer layer material. The buffer layer is deposited from the process or deposition solution while the flexible workpieces are simultaneously heated and processed within a chamber in a face to face manner as the process solution is flown through a process gap formed between the exposed surfaces of the two solar cell absorber layers.

Abstract: A deposition method and a system are provided to deposit a CdS buffer layer on a surface of a solar cell absorber layer of a flexible workpiece from a process solution including all chemical components of the CdS buffer layer material. CdS is deposited from the deposition solution while the flexible workpiece is heated and elastically shaped by a heated shaping plate to retain the process solution on the solar cell absorber layer. The flexible workpiece is elastically shaped by pulling a back surface of the flexible workpiece into a cavity area in the heated shaping plate using an attractive force.

Abstract: A deposition method which deposits a CdS buffer layer on a surface of a solar cell from a process solution including all chemical components of the CdS buffer layer material. CdS is deposited in a deposition chamber by heating the surface of the solar cell absorber to cause the transfer of heat from the solar cell absorber layer to at least a portion of the process solution that is in contact with the surface. Used solution is cooled, and replenished in a solution container and redirected into the deposition chamber.

Abstract: Precursor layers and methods of forming Group IBIIIAVIA solar cell absorbers with bandgap grading using such precursor layers are described. The Group IBIIIAVIA absorber includes a top surface with a Ga/(Ga+In) molar ratio in the range of 0.1-0.3. The Group IBIIIAVIA solar cell absorber is formed by reacting the layers of a multilayer material structure which includes a metallic film including Cu, In and Ga formed on a base, a layer of Se formed on the metallic film, and a second metallic layer substantially including Ga formed on the layer of Se.

Abstract: The present invention relates to method and apparatus for preparing thin films of materials for various applications including electronic devices such as solar cells. In one aspect, each of the method and apparatus passing an electrical current through at least one of the base or sheet to provide controlled localized heat to the base or sheet, or to layers disposed above the base or sheet. In another aspect, the controlled localized heat is provided in combination with a process environment that can be a non-inert gas that contains an element that will become part of a compound on the base or sheet, or an inert gas that allows for the process environment to provide annealing.