Abstract: An integrated circuit includes a control circuit, a primary sensor device coupled to the control circuit, and a plurality of groups of secondary sensor devices coupled to the primary sensor device. The primary sensor device receives a master clock signal from the control device and outputs, to each group of secondary sensor devices, a respective secondary clock signal with a frequency lower than the primary clock signal. The primary sensor device generates primary sensor data. The primary sensor device receives secondary sensor data from each group of secondary sensor devices. The primary sensor device combines the primary sensor data and all of the secondary sensor data into a sensor data stream with a time division-multiplexing scheme and outputs the sensor data stream to the control circuit.

Abstract: Various embodiments provide a device for measuring the flow of fluid inside a tube moved by a peristaltic pump is provided with: a detection electrode arrangement coupled to the tube to detect an electrostatic charge variation originated by the mechanical action of the peristaltic pump on the tube; a signal processing stage, electrically coupled to the detection electrode arrangement to generate an electrical charge variation signal; and a processing unit, coupled to the signal processing stage to receive and process in the frequency domain the electrical charge variation signal to obtain information on the flow of a fluid that flows through the tube based on the analysis of frequency characteristics of the electrical charge variation signal.

Abstract: A recognition system for recognition of a gesture of bringing an electronic device, of a mobile or wearable type, to a user's ear, designed to be integrated in the electronic device and having: a movement sensor, configured to provide a movement signal indicative of the movement of the electronic device; an electrostatic charge variation sensor, configured to provide a charge variation signal associated with the movement; a processing module, operatively coupled to the movement sensor and to the electrostatic charge variation sensor and configured to perform a joint processing of the movement signal and the charge variation signal for the recognition of the gesture.

Abstract: Overvoltage protection circuits are provided. In some embodiments, an overvoltage protection circuit includes a first diode made of a first semiconductor material having a bandgap width greater than that of silicon. A second diode is included and is electrically cross-coupled with the first diode. The second diode is made of a second semiconductor material different from the first semiconductor material.

Abstract: A method of operating an electronic converter is provided in which a switching activity of a switching stage of the electronic converter is active or inactive based on a control signal, and the method includes operating the electronic converter, alternatively, in a first or a second mode. In the first mode, the status signal is initially asserted and is de-asserted in response to an amplitude of the input sensing signal failing to reach a first reference threshold value. In the second mode, the status signal is initially de-asserted and an auxiliary power supply signal is periodically varied with a variation period. After a time interval equal to the variation period, a comparison signal is asserted in response to an amplitude of the sensed signal reaching a second reference threshold value. The status signal is asserted based on conditions of the comparison signal and the periodically varying auxiliary power supply signal.

Abstract: A detection method of a user of an apparatus is provided in which the apparatus is coupled to a charge variation sensor having a control unit and an electrode to detect an electric/electrostatic charge variation of the user. The detection method includes acquiring, through the electrode, a charge variation signal indicative of the presence of the user. A filtered signal is generated by filtering the charge variation signal. A feature signal is generated as a function of the filtered signal. A movement signal indicative of a movement of the user is generated as a function of the feature signal. A presence signal indicative of the presence of the user is generated as a function of the movement signal.

Abstract: A pressure sensor including: a structure which delimits a main cavity of a closed type, the structure being at least partially deformable as a function of a pressure external to the structure; and a MEMS device, which is arranged in the main cavity and generates an output signal, which is of an electrical type and is indicative of the pressure inside the main cavity.

Abstract: An optical proximity sensor comprises a solid-state photo-electric converter, a biasing circuit for biasing the solid-state photo-electric converter, and a drive circuit. The drive circuit is configured to control the biasing circuit to apply to the photo-electric converter a bias signal modulated between a first value and a second value, the second value different from the first value, wherein a modulated optical signal is emitted by the solid-state photo-electric converter towards a target object. The drive circuit is configured to receive an electrical output signal from the solid-state photo-electric converter, the electrical output signal being a function of a modulated optical signal received at the solid-state photo-electric converter as a result of reflection of the emitted modulated optical signal at the target object.

Abstract: A method is provided for controlling an electronic apparatus on the basis of a value of a lid angle between a first hardware element accommodating a first magnetometer and a second hardware element accommodating a second magnetometer. The method includes acquiring, through the magnetometers, first signals representing an orientation of the hardware elements. A calibration parameter indicative of a condition of calibration of the magnetometers is generated on the basis of the first signals. A reliability value indicative of a condition of reliability of the first signals is generated on the basis of the first signals. A first intermediate value of the lid angle is calculated on the basis of the first signals. A current value of the lid angle is calculated on the basis of the calibration parameter, of the reliability value, and of the first intermediate value, and the electronic apparatus is controlled on the basis of the current value.

Abstract: A semiconductor chip or die is mounted at a position on a support substrate. A light-permeable laser direct structuring (LDS) material is then molded onto the semiconductor chip positioned on the support substrate. The semiconductor chip is visible through the LDS material. Laser beam energy is directed to selected spatial locations of the LDS material to structure in the LDS material a pattern of structured formations corresponding to the locations of conductive lines and vias for making electrical connection to the semiconductor chip. The spatial locations of the LDS material to which laser beam energy is directed are selected as a function of the position the semiconductor chip which is visible through the LDS material, thus countering undesired effects of positioning offset of the chip on the substrate.

Abstract: A sensor device includes a passive infrared sensor, a control circuit, and a lens that directs infrared radiation onto the passive infrared sensor. The lens includes an obstruction that asymmetrically blocks transmission of infrared radiation through the lens. The control circuit is configured to determine the direction of crossing of individuals passing in front of the sensor device based on sensor signals from the passive infrared sensor.

Abstract: A circuit includes a current path and a negative bootstrap circuitry coupled to the current path. The current path is coupled between a floating voltage and a reference ground, and includes a current generator coupled through a resistor to the floating voltage at a first node of the current generator. The current generator is controlled by a pulse signal. The negative bootstrap circuitry includes a pump capacitor coupled to a second node of the current generator and to the reference ground. The pump capacitor is configured to provide a negative voltage at the second node of the current generator based on the pulse signal.

Abstract: The vertical-conduction electronic power device is formed by a body of wide band gap semiconductor which has a first conductivity type and has a surface, and is formed by a drift region and by a plurality of surface portions delimited by the surface. The electronic device is further formed by a plurality of first implanted regions having a second conductivity type, which extend into the drift region from the surface, and by a plurality of metal portions, which are arranged on the surface. Each metal portion is in Schottky contact with a respective surface portion of the plurality of surface portions so as to form a plurality of Schottky diodes formed by first Schottky diodes and second Schottky diodes, wherein the first Schottky diodes have, at equilibrium, a Schottky barrier having a height different from that of the second Schottky diodes.

Abstract: A switching regulator circuit has a high side (HS) transistor actuated during on time (TON) of a duty cycle. The output current of the switching regulator circuit is determined from sensing a transistor current flowing through the HS transistor during HS transistor on time (TON) and dividing the sensed transistor current by the duty cycle to generate an output signal indicative of the output current of the switching regulator circuit. The duty cycle is determined from a ratio of the on time (TON) and off time (TOFF) of the switching regulator circuit.

Abstract: Disclosed herein is a microelectromechanical (MEMS) device, including a rotor and a first piezoelectric actuator mechanically coupled to the rotor. The first piezoelectric actuator is electrically coupled between a first signal node and a common voltage node. A second piezoelectric actuator is mechanically coupled to the rotor, and is electrically coupled between a second signal node and the common voltage node. Control circuitry includes a drive circuit configured to drive the first and second piezoelectric actuators, a sense circuit configured to process sense signals generated by the first and second pizeoelectric actuators, and a multiplexing circuit. The multiplexing circuit is configured to alternate between connecting the drive circuit to the first piezoelectric actuator while connecting the sense circuit to the second piezoelectric actuator, and connecting the drive circuit to the second piezoelectric actuator while connecting the sense circuit to the first piezoelectric actuator.

Abstract: One or more semiconductor dice are arranged on a die pad of a leadframe having an array of electrically conductive leads around the die pad. A pattern of electrically conductive wires is provided to couple the semiconductor die or dice with electrically conductive leads in the array around the die pad. An encapsulation of insulating material is provided to encapsulate the semiconductor die or dice arranged on the die pad and the pattern of electrically conductive wires.

Abstract: A sensor device includes an infrared sensor configured to generate sensor data. The sensor device also includes a configurable digital analysis block. The configurable digital analysis block is configured to generate classification data based on the sensor data. The configurable digital analysis block includes a plurality of selectable analysis blocks that can be selectively included in generating the classification data.

Abstract: A microelectromechanical device includes: a support body; at least one movable mass of semiconductor material, elastically constrained to the support body so as to be able to oscillate; fixed detection electrodes rigidly connected to the support body and capacitively coupled to the at least one movable mass; and at least one test structure of semiconductor material, rigidly connected to the support body and distinct from the fixed detection electrodes. The test structure is capacitively coupled to the at least one movable mass and is configured to apply electrostatic forces to the at least one movable mass in response to a voltage between the test structure and the at least one movable mass.

Abstract: A method forms an HEMT transistor of the normally off type, including: a semiconductor heterostructure, which comprises at least one first layer and one second layer, the second layer being set on top of the first layer; a trench, which extends through the second layer and a portion of the first layer; a gate region of conductive material, which extends in the trench; and a dielectric region, which extends in the trench, coats the gate region, and contacts the semiconductor heterostructure. A part of the trench is delimited laterally by a lateral structure that forms at least one first step. The semiconductor heterostructure forms a first edge and a second edge of the first step, the first edge being formed by the first layer.

Abstract: MEMS device comprising: a signal processing assembly; a transduction module comprising a plurality of transducer devices; a stiffening structure at least partially surrounding each transducer device; one or more coupling pillars for each transducer device, extending on the stiffening structure and configured to physically and electrically couple the transduction module to the signal processing assembly, to carry control signals of the transducer devices. Each conductive coupling element has a section having a shape such as to maximize the overlapping surface with the stiffening structure around the respective transducer device. This shape includes hypocycloid with a number of cusps equal to or greater than three; triangular; quadrangular.