Patents Examined by A. A. Turner
  • Patent number: 11982554
    Abstract: Disclosed is a method for commissioning a magneto-inductive flow measuring device having means for producing a magnetic field and at least one measuring electrode pair for sensing a potential difference in a medium. The method includes a settling of the means during a settling time for stabilizing the magnetic field. During the settling time a first voltage time function is applied to the means, wherein after the settling time a measuring time begins, wherein during the measuring time a second voltage time function is applied to the means, wherein the settling time is divided into first time intervals, each of which has a duration, wherein the measuring time is divided into second time intervals, each of which has a duration, wherein an average value of all first interval durations is always less than an average value of all second interval durations.
    Type: Grant
    Filed: May 23, 2019
    Date of Patent: May 14, 2024
    Assignee: Endress+Hauser Flowtec AG
    Inventors: Florent Tschambser, Lars Dreher, Fred Kappertz
  • Patent number: 11980897
    Abstract: An electrification apparatus for dust collection includes an electrification module configured to generate an ion emitted to air and comprising: at least one discharge tip configured to emit the ion in a direction opposite to a flow direction of the air, at least one tip holder supporting the discharge tip, a conductive plate generating a potential difference with the discharge tip, and a frame defining an appearance of the electrification module and supporting the tip holder and the conductive plate. The frame comprises an upper frame disposed at an upper side of the conductive plate and a lower frame disposed at a lower side of the conductive plate, the tip holder is disposed between the upper frame and the lower frame, and an upper surface of the tip holder is coupled to the upper frame and a lower surface of the tip holder is coupled to the lower frame.
    Type: Grant
    Filed: May 6, 2021
    Date of Patent: May 14, 2024
    Assignee: LG ELECTRONICS INC.
    Inventors: Namgyu Shin, Dong Hyuk Lee, Naehyun Park, Ah Ram Kim, Giseop Lee
  • Patent number: 11980016
    Abstract: A semiconductor device according to the present disclosure includes a gate extension structure, a first source/drain feature and a second source/drain feature, a vertical stack of channel members extending between the first source/drain feature and the second source/drain feature along a direction, and a gate structure wrapping around each of the vertical stack of channel members. The gate extension structure is in direct contact with the first source/drain feature.
    Type: Grant
    Filed: July 20, 2022
    Date of Patent: May 7, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chih-Chuan Yang, Chia-Hao Pao, Yu-Kuan Lin, Lien-Jung Hung, Ping-Wei Wang, Shih-Hao Lin
  • Patent number: 11975339
    Abstract: An ionization chamber is provided with a series of parallel plates spaced from each other and with holes passing therethrough. Alternating plates have either a highest high voltage or a lower high voltage provided thereto, such as through a DC transformer coupled to an electric power source. Holes in alternating plates are preferably offset so that airflow through the plates occurs along curving pathways. The plates are sufficiently highly charged to cause carbon dioxide to be ionized and for carbon ions to become trapped within wells defining lowest regions of electric charge within an electric field inside the ionization chamber. Fans control airflow through the ionization chamber. A dehumidifier is provided upstream of the ionization chamber to reduce moisture content within the incoming gas. After the carbon has collected within the wells, harvesting of the carbon ions as carbon nano particle powder can occur within a carbon cache.
    Type: Grant
    Filed: September 20, 2021
    Date of Patent: May 7, 2024
    Inventors: Shannon Smith-Crowley, Cole Smith-Crowley, Calix Smith-Crowley
  • Patent number: 11971951
    Abstract: Systems and methods which provide a motion sensor data-driven framework for sports action recognition and/or assessment using a wearable sensor are described. A motion sensor data-driven system may provide real-time kinematical analysis to athletes engaged in active competition or training sessions under typical competition or training conditions. Analysis of motion sensor data provided according to embodiments may operate to recognize instances of one or more particular sports actions performed by an athlete and/or assess the skill of the athlete from analysis of one or more sports actions. A motion sensor data processing platform of embodiments of a motion sensor data-driven system may comprise a processor-based system configured to receive and analyze data regarding the movement of an athlete's limb reported by a wearable sensor device comprising a micro inertial measurement unit configuration for capturing and reporting data regarding the movement of an athlete's limb.
    Type: Grant
    Filed: June 21, 2018
    Date of Patent: April 30, 2024
    Assignee: City University of Hong Kong
    Inventors: Yufan Wang, Wen Jung Li, Ho Man Chan, Guanglie Zhang
  • Patent number: 11966935
    Abstract: A sentiment analysis computing system includes a storage medium and a processing system. Sentiment input is received from audience members viewing a streamed/webcasted event. The received input is stored to the storage medium. A time slice of the webcasted event is determined and sentiment inputs that are within that time slice are obtained. A sentiment value is calculated for the determined time slice based on aggregated sentiment values. The calculated sentiment value for the time slice is then output by the sentiment analysis computing system.
    Type: Grant
    Filed: June 21, 2021
    Date of Patent: April 23, 2024
    Assignee: NASDAQ, INC.
    Inventor: Matthew B. Farlie
  • Patent number: 11967614
    Abstract: Provided is a semiconductor device comprising an active region on a substrate and including first and second sidewalls extending in a first direction and an epitaxial pattern on the active region, wherein the epitaxial pattern includes first and second epitaxial sidewalls extending from the first and second sidewalls, respectively, the first epitaxial sidewall includes a first epitaxial lower sidewall, a first epitaxial upper sidewall, and a first epitaxial connecting sidewall connecting the first epitaxial lower sidewall and the first epitaxial upper sidewall, the second epitaxial sidewall includes a second epitaxial lower sidewall, a second epitaxial upper sidewall, and a second epitaxial connecting sidewall connecting the second epitaxial lower sidewall and the second epitaxial upper sidewall, a distance between the first and second epitaxial upper sidewalls decreases away from the active region, and the first and second epitaxial lower sidewalls extend in parallel to a top surface of the substrate.
    Type: Grant
    Filed: April 7, 2022
    Date of Patent: April 23, 2024
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jung Gil Yang, Seung Min Song, Soo Jin Jeong, Dong Il Bae, Bong Seok Suh
  • Patent number: 11958059
    Abstract: Provided is an electrostatic dust filter including a frame that is opened back and forth and forms a space through which air passes, a chemical absorbent that is accommodated in the space and absorbs harmful substance in the air, a mesh member that covers the front of the frame and has a plurality of pores through which the air passes, a ground electrode that covers the rear of the frame and has the plurality of pores through which the air passes, and is grounded, and a voltage electrode that is disposed to opposite to the ground electrode with respect to the mesh member and applied with a high voltage.
    Type: Grant
    Filed: August 11, 2021
    Date of Patent: April 16, 2024
    Assignee: LG ELECTRONICS INC.
    Inventors: Minjae Park, Chulwoo Park, Ilna Son
  • Patent number: 11958061
    Abstract: An electrostatic charging air cleaning device. The device includes a pre-charger configured to generate a corona discharge to electrostatically charge particulate matter in an air stream. The device further includes a separator downstream from the pre-charger configured to convey the electrostatically charged particulate matter and formed of an insulative material. The device also includes a collection electrode configured to receive and to absorb the conveyed electrostatically charged particulate matter. The collection electrode includes a substrate material and a coating layer coated onto the substrate material. The coating layer includes a carbon black material and a polymeric binder. The substrate material is a metal plate including mechanical perforations.
    Type: Grant
    Filed: October 31, 2022
    Date of Patent: April 16, 2024
    Assignee: Robert Bosch GmbH
    Inventors: Michael Metzger, Saravanan Kuppan, Sondra Hellstrom, Nathan Craig, Christina Johnston, Jake Christensen
  • Patent number: 11958060
    Abstract: A portable rechargeable personal ionic air purifier energizing a personal airspace and cleaning particulate pollutants therefrom provides removable attachment of ion emitter and housing subassemblies by magnetic attraction, provides an electrically grounded conductive member external to the housing that releasably clips a lanyard or article of clothing, includes a decorative surround and provides an external ground plate for use with a desktop mount, armband or other accessory.
    Type: Grant
    Filed: June 21, 2021
    Date of Patent: April 16, 2024
    Assignee: Headwaters Inc
    Inventors: Rudy A. Vandenbelt, Philippe J. Genereux, Adam T. Clarke
  • Patent number: 11961919
    Abstract: A method of forming a semiconductor device includes: forming a fin protruding above a substrate, where a top portion of the fin comprises a layer stack that includes alternating layers of a first semiconductor material and a second semiconductor material; forming a dummy gate structure over the fin; forming openings in the fin on opposing sides of the dummy gate structure; forming source/drain regions in the openings; removing the dummy gate structure to expose the first semiconductor material and the second semiconductor material under the dummy gate structure; performing a first etching process to selectively remove the exposed first semiconductor material, where after the first etching process, the exposed second semiconductor material form nanostructures, where each of the nanostructures has a first shape; and after the first etching process, performing a second etching process to reshape each of the nanostructures into a second shape different from the first shape.
    Type: Grant
    Filed: March 21, 2022
    Date of Patent: April 16, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Cheng-Chung Chang, Hsiu-Hao Tsao, Ming-Jhe Sie, Shun-Hui Yang, Chen-Huang Huang, An Chyi Wei, Ryan Chia-Jen Chen
  • Patent number: 11961024
    Abstract: A method of automatically generating baggage driver staffing recommendations including receiving a first set of flight parameters for a first flight, creating a first predictive staffing model for the first flight by simulating missed bag quantities for a range of driver quantities using a first computer-implemented machine learning model and the first set of flight parameters, and automatically generating a first recommended driver quantity predicted to result in a quantity of missed bags using the first predictive staffing model and a threshold quantity of missed bags. The missed bag quantities are simulated using a simulator, the first computer-implemented machine learning model is configured to relate driver quantities and flight parameters to expected missed bag quantities, and the first predictive staffing model relates predicted quantities of missed bags to quantities of staffed drivers.
    Type: Grant
    Filed: February 14, 2023
    Date of Patent: April 16, 2024
    Assignee: Insight Direct USA, Inc.
    Inventors: Meagan Leigh Gentry, Jonathan Raynor
  • Patent number: 11960024
    Abstract: A system for measuring the orientation angle of automotive collision avoidance sensors. An adaptive spacer is supported to conformably interengage the collision avoidance sensor module of a vehicle being repaired. The adaptive spacer extends outwardly from the sensor module and the orientation angle of the sensor module is transposed by the adaptive spacer to form an angular guideline on an underlying calibration board, mat or other surface. The angle between the angular guideline and a base guideline parallel to the center line of the vehicle and the angular guideline is measured to provide the orientation angle of the vehicle's sensor module.
    Type: Grant
    Filed: July 17, 2020
    Date of Patent: April 16, 2024
    Inventor: Jacob Kohn
  • Patent number: 11963368
    Abstract: A memory includes: a dielectric fin formed over a substrate; and a pair of memory cells disposed along respective sidewalls of the dielectric fin, each of the pair of memory cells comprising: a first conductor layer; a selector layer; a resistive material layer; and a second conductor layer, wherein the first conductor layer, selector layer, resistive material layer, and second conductor layer each includes upper and lower boundaries, and at least one of the upper and lower boundaries is tilted away from one of the sidewalls of the dielectric fin by an angle.
    Type: Grant
    Filed: May 25, 2021
    Date of Patent: April 16, 2024
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chun-Chieh Mo, Shih-Chi Kuo, Tsai-Hao Hung
  • Patent number: 11955330
    Abstract: A method of forming a microelectronic device comprises forming openings in an interdeck region and a first deck structure, the first deck structure comprising alternating levels of a first insulative material and a second insulative material, forming a first sacrificial material in the openings, removing a portion of the first sacrificial material from the interdeck region to expose sidewalls of the first insulative material and the second insulative material in the interdeck region, removing a portion of the first insulative material and the second insulative material in the interdeck region to form tapered sidewalls in the interdeck region, removing remaining portions of the first sacrificial material from the openings, and forming at least a second sacrificial material in the openings. Related methods of forming a microelectronic devices and related microelectronic devices are disclosed.
    Type: Grant
    Filed: June 1, 2022
    Date of Patent: April 9, 2024
    Assignee: Micron Technology, Inc.
    Inventors: John D. Hopkins, Damir Fazil
  • Patent number: 11948987
    Abstract: A semiconductor device according to the present disclosure includes a source feature and a drain feature, a plurality of semiconductor nanostructures extending between the source feature and the drain feature, a gate structure wrapping around each of the plurality of semiconductor nanostructures, a bottom dielectric layer over the gate structure and the drain feature, a backside power rail disposed over the bottom dielectric layer, and a backside source contact disposed between the source feature and the backside power rail. The backside source contact extends through the bottom dielectric layer.
    Type: Grant
    Filed: September 9, 2020
    Date of Patent: April 2, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Lung-Kun Chu, Mao-Lin Huang, Chung-Wei Hsu, Jia-Ni Yu, Kuo-Cheng Chiang, Kuan-Lun Cheng, Chih-Hao Wang
  • Patent number: 11942375
    Abstract: A structure and a formation method of a semiconductor device are provided. The method includes forming a first semiconductor fin and a second semiconductor fin over a semiconductor substrate. The second semiconductor fin is wider than the first semiconductor fin. The method also includes forming a gate stack over the semiconductor substrate, and the gate stack extends across the first semiconductor fin and the second semiconductor fin. The method further includes forming a first source/drain structure on the first semiconductor fin, and the first source/drain structure is p-type doped. In addition, the method includes forming a second source/drain structure on the second semiconductor fin, and the second source/drain structure is n-type doped.
    Type: Grant
    Filed: August 17, 2021
    Date of Patent: March 26, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Hsing-Hui Hsu, Po-Nien Chen, Yi-Hsuan Chung, Bo-Shiuan Shie, Chih-Yung Lin
  • Patent number: RE49936
    Abstract: This invention relates generally to the discovery of novel recombinant forms of ?-hexosyl-transferases (BHT) and uses thereof to produce galacto-oligosaccharides (GOS) or as food additives.
    Type: Grant
    Filed: December 18, 2020
    Date of Patent: April 23, 2024
    Assignee: North Carolina State University
    Inventors: Jose M. Bruno-Barcena, Suzanne Dagher, Maria Azcarate-Peril
  • Patent number: RE49961
    Abstract: An improved method of deprotection in solid phase peptide synthesis is disclosed. In particular the deprotecting composition is added in high concentration and small volume to the mixture of the coupling solution, the growing peptide chain, and any excess activated acid from the preceding coupling cycle, and without any draining step between the coupling step of the previous cycle and the addition of the deprotection composition for the successive cycle. Thereafter, the ambient pressure in the vessel is reduced with a vacuum pull to remove the deprotecting composition without any draining step and without otherwise adversely affecting the remaining materials in the vessel or causing problems in subsequent steps in the SPPS cycle.
    Type: Grant
    Filed: November 12, 2020
    Date of Patent: May 7, 2024
    Assignee: CEM Corporation
    Inventor: Jonathan M. Collins
  • Patent number: RE49967
    Abstract: Provided are combinations, compositions and kits containing a immune globulin (IG) composition and a soluble hyaluronidase composition formulated for subcutaneous administration. Such products can be used in methods of treating IG-treatable diseases or conditions. Also provided are methods for subcutaneous administration of immune globulin whereby the dosing regimen is substantially the same as for intravenous administration of the same dosage for treatment of the same IG-treatable disease or condition.
    Type: Grant
    Filed: May 27, 2021
    Date of Patent: May 14, 2024
    Assignee: Takeda Pharmaceutical Company Limited
    Inventors: Richard Schiff, Heinz Leibl