Abstract: A negative resist composition and a method for patterning semiconductor devices using the composition are provided. The negative resist composition contains an alkali-soluble hydroxy-substituted base polymer, a silicon-containing crosslinker having an epoxy ring, and a photoacid generator. In the method for patterning semiconductor devices, fine patterns are formed according to a bi-layer resist process using the negative resist composition.

Abstract: The invention relates to a method of structuring of a substrate by providing a polymerization starter layer on the substrate, applying a radiation field on the polymerization starter layer for selectively reducing a density of polymerization starters of the polymerization starter layer, applying monomers and then polymerizing of the monomers, the polymerization being initiated by the starters of the polymerization starter layer, and structuring the substrate using the polymerized monomers as a mask.

Abstract: Photoresist patterns are formed using a photoresist composition, which includes water, a photoacid generator, and a negative photoresist polymer. The polymer includes a basic-type repeating unit represented by Formula (I) (shown below), so that a developing process can be performed not by using conventional TMAH solution but by using water. Additionally, since the main solvent of the composition is water, the disclosed photoresist composition is eco-friendly, and has a low light absorbance at 193 nm and 248 nm, which is useful in a photolithography process using light source in a far ultraviolet region when high-integrated fine circuits of semiconductor device are manufactured. wherein R1, R2, R3, R4, R5, R6, R7, b, c, d and m are defined in the specification.

Abstract: Disclosed is a printing plate material comprising a support and provided thereon, a hydrophilic layer and a thermosensitive image formation layer containing a blocked isocyanate compound, which is a reaction product of an isocyanate compound, a polyol, and an isocyanate group-blocking material, wherein the thermosensitive image formation layer is formed by coating on the support an aqueous thermosensitive image formation layer coating liquid containing the blocked isocyanate compound.

Abstract: Resist compositions comprising as the base resin a polymer having alkoxyisobutoxy as a reactive group which is decomposable under the action of an acid to increase solubility in alkali have advantages including a significantly enhanced contrast of alkali dissolution rate before and after exposure, a high sensitivity, and a high resolution in fine feature size regions. The compositions are best suited as a chemically amplified resist material for micropatterning in the manufacture of VLSI.

Abstract: A planographic printing plate material including a support having thereon a photosensitive layer containing: (A) a photopolymerization initiator; (B) a polymer binder; (c) a polymerizable compound having an ethylenically unsaturated bond; and (D) an anionic dye, wherein the photopolymerization initiator is a metal-arene complex, and the anionic dye has a solubility in methyl ethyl ketone of not less than 1 weight % based on the total weight of methyl ethyl ketone.

Abstract: A positive resist composition comprising: at least two resins which differ in glass transition temperature by at least 5° C.; and a compound which generates an acid upon irradiation with actinic rays or radiation, wherein each of the two resins comprises at least either of a repeating unit derived from an acrylic acid derivative monomer and a repeating unit derived from an methacrylic acid derivative monomer and further comprises an alicyclic structure and at least one group that increases a solubility of the resin in alkaline developer by the action of an acid.

Abstract: A resist composition includes a photoacid generator (PAG) and a photosensitive polymer. The photosensitive polymer is polymerized with (a) at least one of the monomers having the respective formulae: where R1 and R2 are independently a hydrogen atom, alkyl, hydroxyalkyl, alkyloxy, carbonyl or ester, and x and y are independently integers from 1 to 6, and (b) at least one of a (meth)acrylate monomer, a maleic anhydride monomer, and a norbornene monomer.

Abstract: A positive-working resist composition comprising (A) a resin that increases solubility in an alkali developing solution by the action of an acid, (B) a compound which generates an acid upon irradiation of an actinic ray or radiation, (C) a nonionic cyclic compound having at least one partial structure represented by the following formula (I) or (II) and at least having either a melting point of 35° C. or more or a boiling point of 100° C./10 mmHg or more: and (D) a solvent.

Abstract: This invention provides an undercoating layer material and a filler material containing a resin component having at least a substituent group which is capable of releasing a terminal group to form a sulfonic acid residue upon application of predetermined energy, and a solvent. The resin component has at least a repeating unit represented by formula (1): wherein n is an integer of 1 or more, X represents a C1 to C10 linear or branched alkyl chain, an aromatic or alicyclic alkyl chain or an alkyl ester chain, and Y is a substituent group forming a sulfonic acid residue upon application of predetermined energy.

Abstract: A process of forming ultra fine patterns using bottom anti-reflective coating containing acid generator. More particularly, a process of forming vertical patterns using an organic bottom anti-reflective coating containing excessive amount of acid generator, in order to prevent formation of sloping patterns due to photoresist resins absorbing wavelength of light used as light sources during lithography process using light sources such as KrF, ArF, VUV, EUV, E-beam and ion beam, even when photoresist resins having high absorbance to light source are used.

Abstract: A positive resist composition includes a resin component (A) which contains an acid dissociable dissolution inhibiting group and displays increased alkali solubility under the action of acid, an acid generator component (B) that generates acid on exposure, and a compound (C) represented by a general formula (1) shown below: (wherein, each R1 group and each R3 group represents, independently, a hydrogen atom, an alkyl group of 1 to 3 carbon atoms, or a cycloalkyl group of 4 to 6 carbon atoms, provided at least one of the R1 and R3 groups is a cycloalkyl group of 4 to 6 carbon atoms, n represents an integer from 1 to 3, R2 represents an alkyl group of 1 to 3 carbon atoms, and X represents an alkylene group of either 4 or 5 carbon atoms).

Abstract: Chemically amplified positive resist compositions comprising a polymer obtained by copolymerizing a silicon-containing monomer with a polar monomer having a value of LogP or cLogP of up to 0.6 and optionally hydroxystyrene, a photoacid generator and an organic solvent are sensitive to high-energy radiation and have a high sensitivity and resolution at a wavelength of less than 300 nm and improved resistance to oxygen plasma etching.

Abstract: An image forming medium includes a substrate and an imaging layer including a photochromic material and a polymer binder coated on the substrate, where the photochromic material exhibits a reversible homogeneous-heterogeneous transition between a colorless state and colored state in the polymer binder.

Abstract: The present invention relates to a process for increasing the level of safeguard in respect of forgery of paper documents. For that purpose, applied to the paper document is a transfer film or laminating film having a laser-sensitive layer. This multi-layer body is then treated with laser radiation. In that case, a laser-induced marking is produced in the laser-sensitive layer, for example, by laser-induced bleaching, laser-induced color change or laser-induced blackening. Respective individualization of the document can be effected by way of that laser-induced marking.

Abstract: Compositions and techniques for the processing of semiconductor devices are provided. In one aspect of the invention, an antireflective hardmask composition is provided. The composition comprises a fully condensed polyhedral oligosilsesquioxane, {RSiO1.5}n, wherein n equals 8; and at least one chromophore moiety and transparent moiety. In another aspect of the invention, a method for processing a semiconductor device is provided. The method comprises the steps of: providing a material layer on a substrate; forming an antireflective hardmask layer over the material layer. The antireflective hardmask layer comprises a fully condensed polyhedral oligosilsesquioxane, {RSiO1.5}n, wherein n equals 8; and at least one chromophore moiety and transparent moiety.

Abstract: A method of forming an integrated circuit using an amorphous carbon film. The amorphous carbon film is formed by thermally decomposing a gas mixture comprising a hydrocarbon compound and an inert gas. The amorphous carbon film is compatible with integrated circuit fabrication processes. In one integrated circuit fabrication process, the amorphous carbon film is used as a hardmask. In another integrated circuit fabrication process, the amorphous carbon film is an anti-reflective coating (ARC) for deep ultraviolet (DUV) lithography. In yet another integrated circuit fabrication process, a multi-layer amorphous carbon anti-reflective coating is used for DUV lithography.

Abstract: The invention relates to a resist for electron beam lithography and to a process for producing photomasks for optical lithography. The inventive resist includes repeating units that are derived from maleic anhydride and that can act as an anchor group for the subsequent binding of silicon-containing groups. The etch stability of the resist can thus be subsequently increased so that there is no dimensional loss on transfer of the resist structure to a chromium layer arranged under the resist.

Abstract: An antireflective coating composition including a polyester and/or a polyurethane; and a crosslinker selected from the group consisting of tetraamidomethyl ethers.

Abstract: In obtaining a photomask blank 1 by disposing a sputtering target in a vacuum chamber and forming thin films 3, 4, and 5 with a three-layer construction of CrN/CrC/CrON over a transparent substrate 2 by reactive sputtering, the thin films are formed in a mixed gas atmosphere containing helium, and the helium gas flux in the mixed gas is controlled such that the crystal grain diameter of the CrC thin film, which is the thickest film, will be 3 to 7 nm. This yields a photomask blank having thin films with low film stress, having good film quality, and which can be produced at a high yield in mass production.