Abstract: A negative-working resist composition for electron beams or X-rays comprising (A) a compound generating a sulfonic acid by the irradiation of electron beams or x-rays, (B) a resin which is insoluble in water and soluble in an alkali aqueous solution, (C) a crosslinking agent crosslinking with the resin (B) by the action of an acid, and (D) a compound generating a carboxylic acid having a specific structure by the irradiation of electron beams or x-rays.

Abstract: A photosensitive formulation for high-temperature-resistant photoresists is based on polyhydroxyamides. The photosensitive formulations display a much higher photosensitivity than the comparable formulations based on quinone azide photoactive components. After conversion to the polybenzoxazole, the novel formulations also display a lower dielectric constant than the quinone azide-based formulations. A film can be made by applying the photosensitive formulation to a wafer and then evaporating the solvent. A method for fabricating electronics and micorelectronics structures a wafer by using the film in photolithography.

Abstract: A heat-sensitive composition can be used to make a heat-sensitive imaging material. The composition includes a water-soluble or water-dispersible binder and dispersed therein, a photothermal conversion material, and hybrid particles of a combustible nitro-resin and an addition polymer derived from one or more ethylenically unsaturated polymerizable monomers. The hybrid particles preferably have a core-shell structure with the combustible nitro-resin comprising the core and the addition polymer providing the shell. These imaging materials are particularly useful as “direct-write” thermally imageable elements useful to provide lithographic printing plates without ablation or the need for alkaline development.

Abstract: In a method of forming a mask, initially, a first layer is formed on a base layer. The first layer is made of a material being soluble in a developer used for developing a resist and having a higher removal rate in ashing than the resist. Next, a second layer made of the resist is formed on the first layer, and exposed to light. Next, the second layer is developed and part of the first layer is dissolved using the developer. In this step, the width of the first layer is made equal to or greater than that of the second layer. Next, the width of the first layer is made smaller than that of the second layer through ashing. As a result of the ashing, the first layer makes the lower layer of the mask and the second layer makes the upper layer.

Abstract: Thermally-assisted organometallic sol-gel derived glasses have been found to permit fabrication of thin films sufficiently thin for telecom components. Inclusion of a photosensitizer in the film permits light of controlled intensity to modify refractive indices in the film to form useful structures.

Abstract: Improved methods for forming multilayer circuit structures are disclosed. In some embodiments, conductive layers, dielectric layers and conductive posts can be formed on both sides of a circuitized core structure. The conductive posts are disposed in the dielectric layers and can be stacked to form a generally vertical conduction pathway which passes at least partially through a multilayer circuit structure. The formed multilayer circuit structures can occupy less space than corresponding multilayer circuit structures with stacked via structures.

Abstract: The present invention provides a photopolymerizable composition comprising a polymerizable compound including an addition-polymerizable unsaturated bond, a photo-radical-generating agent, and an amine compound represented by the following general formula (I) and a recording material comprising a recording layer containing the photopolymerizable composition: in which: R1 and R2 each represent a hydrogen atom or an aliphatic group, and may be the same as or different from one another; each aliphatic group may be further substituted; R1 and R2 may form a ring by bonding directly or via a substituent; and R3 represents a benzyl group, which may be further substituted.

Abstract: Resist compositions comprising as the base resin a polymer using an alkoxyalkyl (meth)acrylate as a reactive group which is decomposable under the action of an acid to increase solubility in alkali have advantages including a practical level of shelf stability, a significantly enhanced contrast of alkali dissolution rate before and after exposure, a high sensitivity, and a high resolution over a wide baking temperature range. The compositions are best suited as a chemically amplified positive resist material for micropatterning in the manufacture of VLSI.

Abstract: There are provided a photosensitive resin composition containing at least a polymer compound having a sugar structure, which has at least two species of functional groups cleavable in the presence of an acid, and a photo acid generator generating an acid by radiation of an electromagnetic wave or a beam of an electrically charged particle, and in addition, a resist composition, a method for fabricating a patterned substrate for fabricating a semiconductor device and the like, and a device such as a highly integrated semiconductor and the like.

Abstract: A color filter array having a yellow filter layer on a substrate wherein the yellow filter layer comprises a pyridone azo dye having its absorption maximum at a wavelength of 400 to 500 nm; and has a transmittance at a wavelength of 450 nm of 5% or less, that at 535 nm of 80% or more and that at 650 nm of 90% or more is provided; the color filter array shows excellent spectroscopic characteristics with respect to yellow light, is capable of forming a pattern with a short time exposure and has a yellow filter layer excellent in light fastness; and a photosensitive resin composition with which a pattern can be formed with a short time exposure is also provided.

Abstract: TIMD (tetraisopropyl methylene diphosphonate) as a light absorbance depressant to a light source of a wavelength of less than 200 nm, and a photoresist composition containing the same are disclosed. The disclosed chemically amplified photoresist composition containing TIMD is useful for a VUV (vacuum ultraviolet) photoresist composition due to its low light absorbance to a light source of a wavelength of 157 nm.

Abstract: A resist composition with enhanced X-ray and electron sensitivity includes a plurality of chemically inert nanoparticles dispersed throughout a base resist material. The nanoparticles have a higher atomic number than the base resist material and each of the nanoparticles is formed by a nanoparticle core, e.g., of a noble metal, coated with an organic capping layer or shell. The latter renders the core dispersible and chemically compatible with the resist material surrounding the nanoparticle. A method of making a resist composition with enhanced X-ray and electron sensitivity is to provide a resist material and disperse chemically inert nanoparticles throughout the resist. The nanoparticles have a higher atomic number than the resist and a have core/shell structure. A resist composition with enhanced X-ray and electron sensitivity can be made by having a nanoparticle core, with a higher atomic number than the resist, that is coated with an organic capping layer.

Abstract: A photoacid compound having the following general structure: R—O(CF2)nSO3X wherein n is an integer between about 1 to 4; R is selected from the group consisting of: substituted or unsubstituted C1-C12 linear or branched alkyl or alkenyl, substituted or unsubstituted araalkyl, substituted or unsubstituted aryl, substituted or unsubstituted bicycloalkyl, substituted or unsubstituted tricycloalkyl, hydrogen, alkyl sulfonic acid, substituted or unsubstituted perfluoroalkyl, the general structure F((CF2)pO)m(CF2)q— wherein p is between about 1 to 4, m is between about 0 to 3 and q is between about 1 to 4, and substituted or unsubstituted partially fluorinated alkyl, halofluoroalkyl, perfluoroalkylsulfonic, or glycidyl; and X is selected from the group consisting of: organic cations and covalently bonded organic radicals.

Abstract: A resist composition includes a photoacid generator (PAG) and a photosensitive polymer. The photosensitive polymer includes a comonomer having an acid-labile substituent group or a polar functional group, and a copolymer of alkyl vinyl ether and maleic anhydride. The copolymer is represented by the following structure: where k is an integer of 3 to 8, and where X is tertiary cyclic alcohol having 7 to 20 carbon atoms.

Abstract: A method of forming an integrated circuit using an amorphous carbon film. The amorphous carbon film is formed by thermally decomposing a gas mixture comprising a hydrocarbon compound and an inert gas. The amorphous carbon film is compatible with integrated circuit fabrication processes. In one integrated circuit fabrication process, the amorphous carbon film is used as a hardmask. In another integrated circuit fabrication process, the amorphous carbon film is an anti-reflective coating (ARC) for deep ultraviolet (DUV) lithography. In yet another integrated circuit fabrication process, a multi-layer amorphous carbon anti-reflective coating is used for DUV lithography.

Abstract: Photosensitive compositions each comprises (A) at least one sensitizer selected from the group consisting of bichromates and chromates, (B) a water-soluble high-molecular substance, such as casein, polyvinyl alcohol, gelatin or fish glue, (C) at least one sensitivity improver selected from the group consisting of polyhydric alcohols and ethers; and (D) water.

Abstract: A chemical amplification type resist composition comprising: (a) a resin comprising repeating units having a side chain containing the specific partial structure and which increases the solubility in an alkaline developing solution by the action of an acid, (b) a compound capable of generating an acid upon irradiation with actinic rays or a radiation, (c) a low-molecular compound having a molecular weight of 3,000 or lower, wherein the value determined with the specific calculation formula is from 0.1 to 0.5, and (d) a solvent.

Abstract: A radiation-sensitive resin composition comprising (A) a compound of the following formula (1), (R1, R2, and R3 is hydrogen, hydroxyl group, or monovalent organic group and R4 is monovalent acid-dissociable group), (B) an alkali insoluble or scarcely soluble resin comprising a recurring unit of the following formula (2), (R5 is hydrogen or monovalent organic group, R′ hydrogen or methyl, n 1-3, m 0-3) and a recurring unit containing acid-dissociable group, and (C) a photoacid generator. The resin composition is useful as a chemically amplified resist, exhibits high sensitivity, resolution, radiation transmittance, and surface smoothness, and is free from the problem of partial insolublization during overexposure.

Abstract: A polymerizable composition for use in electron beam lithography, according to the following structural formula: The formula use the following definitions. m is a number from 0.1 to 0.9. n is a number from 0.1 to 0.9 with m+n=1. I is an integer from 1 to 100. R1 is H, an alkyl, a halogen, an amine, a silicon compound, or a germanium compound, having a chain length of up to six carbon, silicon, or germanium atoms. R2 is H, an alkyl, a halogen, an amine, a silicon group, or a germanium compound, having a chain length of up to six carbon, silicon, or germanium atoms. R3 is an organic protective group which can be eliminated. A resist and a process using the resist utilize the polymerizable composition. The use of the polymerizable composition in a resist reduces or prevents charging of a substrate at high exposure sensitivity.

Abstract: A mask including a material, which has heat resistance and light absorptivity, is selectively formed on a crystalline silicon film containing a catalytic element. Next, by using the mask, phosphorus is implanted into the silicon film and an implanted portion of the silicon film is transformed into amorphous. Then the silicon film is heated by a rapid thermal annealing (RTA) method, so that the temperature of the portion covered with the mask becomes higher than other portions. As a result, the catalytic element moves from the high temperature portion covered with the mask to the lower temperature amorphous portion in which phosphorus has been implanted and which has a large gettering capacity. Thus, the concentration of the catalytic element in the portion covered with the mask is lowered, and a semiconductor device is manufactured by using the film.