Abstract: Disclosed is a composite electrolyte membrane comprising a microporous polymer substrate and a sulfonated polymer electrolyte.

Abstract: Systems for the sustained, high-volume production of Group III-V compound semiconductor material suitable for fabrication of optic and electronic components, for use as substrates for epitaxial deposition, or for wafers. The equipment is optimized for producing Group III-N (nitrogen) compound semiconductor wafers and specifically for producing GaN wafers. The method includes reacting an amount of a gaseous Group III precursor as one reactant with an amount of a gaseous Group V component as another reactant in a reaction chamber to form the semiconductor material; removing exhaust gases including unreacted Group III precursor, unreacted Group V component and reaction byproducts; and heating the exhaust gases to a temperature sufficient to reduce condensation thereof and enhance manufacture of the semiconductor material. Advantageously, the exhaust gases are heated to sufficiently avoid condensation to facilitate sustained high volume manufacture of the semiconductor material.

Abstract: A Coanda flow amplifier has a suction intake, an outlet, a fluid channel extending between the suction intake and the outlet, and a drive-flow inlet, which is fluidly connected to the fluid channel via a drive-flow discharge slit, whereby the flow cross section of the drive-flow discharge slit is variably adjustable. In a method to operate the Coanda flow amplifier, the variably adjustable flow cross section of the drive-flow discharge slit is chosen such that a pressure ratio between an output pressure of the drive flow when it leaves the drive-flow discharge slit, and an intake pressure of the drive flow when it enters the drive-flow discharge slit, does not exceed a critical pressure ratio. A fuel cell system comprises at least one fuel cell, a fluid source, a fluid line, and a Coanda flow amplifier arranged in the fluid line, whereby the Coanda flow amplifier is equipped with a drive-flow discharge slit with a variably adjustable flow cross section.

Abstract: In method of crystal growth, an interior of a crystal growth chamber (2) is heated to a first temperature in the presence of a first vacuum pressure whereupon at least one gas absorbed in a material (4) disposed inside the chamber is degassed therefrom. The interior of the chamber is then exposed to an inert gas at a second, higher temperature in the presence of a second vacuum pressure that is at a higher pressure than the first vacuum pressure. The inert gas pressure in the chamber is then reduced to a third vacuum pressure that is between the first and second vacuum pressures and the temperature inside the chamber is lowered to a third temperature that is between the first and second temperatures, whereupon source material (10) inside the chamber vaporizes and deposits on a seed crystal (12) inside the chamber.

Abstract: A method for making zeolite SSZ-35 is disclosed using a N,N-dimethylazonanium cation as a structure directing agent.

Abstract: A system and method for acid-gas capture wherein organic acid-gas capture materials form hetero-atom analogs of alkyl-carbonate when contacted with an acid gas. These organic-acid gas capture materials include combinations of a weak acid and a base, or zwitterionic liquids. This invention allows for reversible acid-gas binding to these organic binding materials thus allowing for the capture and release of one or more acid gases. These acid-gas binding organic compounds can be regenerated to release the captured acid gasses and enable these organic acid-gas binding materials to be reused. This enables transport of the liquid capture compounds and the release of the acid gases from the organic liquid with significant energy savings compared to current aqueous systems.

Abstract: The present invention relates to methods and apparatus that are optimized for producing Group III-N (nitrogen) compound semiconductor wafers and specifically for producing GaN wafers. Specifically, the methods relate to substantially preventing the formation of unwanted materials on an isolation valve fixture within a chemical vapor deposition (CVD) reactor. In particular, the invention provides apparatus and methods for limiting deposition/condensation of GaCl3 and reaction by-products on an isolation valve that is used in the system and method for forming a monocrystalline Group III-V semiconductor material by reacting an amount of a gaseous Group III precursor as one reactant with an amount of a gaseous Group V component as another reactant in a reaction chamber.

Abstract: An object of the present invention is to provide an electrode for a lithium ion secondary battery that can ensure a high level of safety even when exposed to severe conditions such as a nail penetration test or crush test, and exhibit excellent output characteristics. The present invention relates to an electrode for a lithium ion secondary battery having a material mixture containing active material particles capable of reversibly absorbing and desorbing lithium, and a current collector that carries the material mixture, wherein a surface of the current collector has recessed portions, and an area occupied by the recessed portions accounts for not less than 30% of an a material mixture carrying area of the current collector.

Abstract: In one example embodiment, a substrate having a smooth surface is prepared, a fine-particle layer including fine particles which are arranged along the surface is formed, and substituent molecules are bonded to the fine particles to change the fine-particle layer to a fine-particle assembly layer including the fine particles to which the substituent molecules are bonded, so that the center-to-center distance between the adjacent fine particles is increased to form a three-dimensional microstructure in which a portion of the fine-particle assembly layer is raised from the surface or the center-to-center distance between the adjacent fine particles is decreased to form a microstructure in which the fine-particle assembly layer is absent in a portion of the surface, the substrate being exposed in the absent portion.

Abstract: Provided is a method for producing an MTW-type zeolite. The reaction mixture contains a silica source, an alumina source, an alkali source, and water is reacted with a seed crystal of a zeolite to produce an MTW-type zeolite. The reaction mixture has a composition, which makes a synthesized zeolite contain an MFI-type zeolite when the zeolite is synthesized solely from the reaction mixture, is used. As the seed crystal, a beta-type zeolite which has a ratio of SiO2/Al2O3 of 8 to 50 and does not contain a structure direction agent is used. The seed crystal is added to the reaction mixture, in a proportion of 0.1% by mass to 20% by mass based on a silica component in the reaction mixture. The reaction mixture to which the seed crystal has been added is heated at 100° C. to 200° C. in a sealed state.

Abstract: A system and method are provided for recovering a re-usable grade of sulphur hexafluoride (SF6) from a potentially contaminated gas source. The system includes extraction vessels connected to the potentially contaminated gas source. A first cryogenic means reduces the temperature of the extraction vessel to a temperature below the phase transition of SF6 causing a pressure differential which causes the potentially contaminated gas to enter the extraction vessels. The SF6 turns to liquid and/or solid form in the extraction vessel. Non-condensed contaminant gas is evacuated from the extraction vessels. Recovery vessels are connected to the extraction vessel. A second cryogenic means is used to reduce the temperature of the recovery vessels. Raising the temperature of the extraction vessels creates a pressure differential which causes a re-usable grade of SF6 to enter the recovery vessels.

Abstract: A method of crystallizing a crystalline molecular sieve having a pore size in the range of from about 2 to about 19 ?, said method comprising the steps of (a) providing a mixture comprising at least one source of ions of tetravalent element (Y), at least one hydroxide source (OH), and water, said mixture having a solid-content in the range of from about 15 wt. % to about 50 wt. %; and (b) treating said mixture to form the desired crystalline molecular sieve with stirring at crystallization conditions sufficient to obtain a weight hourly throughput from about 0.005 to about 1 hr?1, wherein said crystallization conditions comprise a temperature in the range of from about 200° C. to about 500° C. and a crystallization time less than 100 hr.

Abstract: This invention provides a process for producing an electrode catalyst for a fuel cell, comprising a first support step of producing metallic fine particles having an average particle diameter of 0.1 to 1.5 nm provided at regulated particle intervals on an electroconductive carbon carrier, and a second support step of growing a metal identical to or dissimilar to the metal using the metallic fine particles as a nucleus. In the first support step, the metallic fine particles are supported by an immersion method. The above constitution can provide an electrode catalyst for a fuel cell, which has a high level of percentage support, has a high level of dispersibility, and has improved methanol oxidation activity per weight of the catalyst. Further, when treatment in an atmosphere containing hydrogen is carried out at a low temperature below 100° C., the methanol oxidation activity per active surface area can be improved without lowering the active area.

Abstract: Sorbent bodies comprising activated carbon, processes for making them, and methods of using them. The sorbent bodies can be used to remove toxic elements from a fluid, such as from a gas stream. For instance, the sorbent bodies may be used to remove elemental mercury or mercury in an oxidized state from a coal combustion flue gas.

Abstract: Embodiments of the invention provide catalysts for hydrocarbon oxidation. One embodiment of the invention provides a catalyst for hydrocarbon oxidation comprising: a liquid medium including aromatic hydrocarbon 150; bis(2,4-pentanedionato)platinum; bis(2,4-pentanedionato)palladium; ferrocene; magnesium 2-ethylhexanoate; and cerium (III) 2-ethylhexanoate, rhenium in an organo-metallic compound, or both.

Abstract: A hydrocarbon conversion catalyst, which comprises, based on the total weight of the catalyst, 1-60 wt % of a zeolite mixture, 5-99 wt % of a thermotolerant inorganic oxide and 0-70 wt % of clay, wherein said zeolite mixture comprises, based on the total weight of said zeolite mixture, 1-75 wt % of a zeolite beta modified with phosphorus and a transition metal M, 25-99 wt % of a zeolite having a MFI structure and 0-74 wt % of a large pore zeolite, wherein the anhydrous chemical formula of the zeolite beta modified with phosphorus and the transition metal M is represented in the mass percent of the oxides as (0-0.3)Na2O.(0.5-10)Al2O3.(1.3-10)P2O5.(0.7-15)MxOy.(64-97)SiO2, in which the transition metal M is one or more selected from the group consisting of Fe, Co, Ni, Cu, Mn, Zn and Sn; x represents the atom number of the transition metal M, and y represents a number needed for satisfying the oxidation state of the transition metal M.

Abstract: A catalytic composition is particularly well suited for hydrocarbon conversion to synthesis gas at a temperature of between 800 and 1000° Celsius. The catalytic composition includes a noble metal cluster having an X-Y-Z axial mean linear dimension of between 2 and 15 Angstroms and a super cage structure surrounding the noble metal cluster. The super cage structure stabilizes the noble metal cluster against aggregation at temperatures of 1000° Celsius. A process for reforming hydrocarbon feedstock to hydrogen and carbon monoxide is also provided that conversion to greater than 80% of theoretical yield.

Abstract: A polycrystalline silicon reactor which can prevent polycrystalline silicon which deposits on the surface of an electrode holding a silicon seed rod from being peeled off is provided. In a polycrystalline silicon reactor which applies an electric current to a silicon seed rod provided within a furnace, thereby heating the silicon seed rod, brings a source gas supplied into the furnace into reaction, and deposits polycrystalline silicon on the surface of the silicon seed rod, the reactor includes, at a bottom plate of the furnace, an electrode holder provided so as to be electrically insulated from the bottom plate, and a seed rod holding electrode connected to the electrode holder, and holding the silicon seed rod toward the upside. Concavo-convex portions exposed to a furnace atmosphere is provided at an outer peripheral surface of the seed rod holding electrode.

Abstract: Affords AlxGa1-xN crystal growth methods, as well as AlxGa1-xN crystal substrates, wherein bulk, low-dislocation-density crystals are obtained. The AlxGa1-xN crystal (0<x?1) growth method is a method of growing, by a vapor-phase technique, an AlxGa1-xN crystal (10), characterized by forming, in the growing of the crystal, at least one pit (10p) having a plurality of facets (12) on the major growth plane (11) of the AlxGa1-xN crystal (10), and growing the AlxGa1-xN crystal (10) with the at least one pit (10p) being present, to reduce dislocations in the AlxGa1-xN crystal (10).

Abstract: Methods for producing macroscopic quantities of oxidized graphene nanoribbons are disclosed herein. The methods include providing a plurality of carbon nanotubes and reacting the plurality of carbon nanotubes with at least one oxidant to form oxidized graphene nanoribbons. The at least one oxidant is operable to longitudinally open the carbon nanotubes. In some embodiments, the reacting step takes place in the presence of at least one acid. In some embodiments, the reacting step takes place in the presence of at least one protective agent. Various embodiments of the present disclosure also include methods for producing reduced graphene nanoribbons by reacting oxidized graphene nanoribbons with at least one reducing agent. Oxidized graphene nanoribbons, reduced graphene nanoribbons and compositions and articles derived therefrom are also disclosed herein.