Abstract: The edges of the reticle are detected with respect to the microstructured patterns exposed by the stepper, and the shapes of the microstructured patterns at the surface and at the bottom of the photoresist are detected. The microstructured patterns are evaluated by calculating, and displaying on the screen, the dislocation vector that represents the relationship in position between the detected patterns on the surface and at the bottom of the photoresist. Furthermore, dislocation vectors between the microstructured patterns at multiple positions in a single-chip or single-shot. area or on one wafer are likewise calculated, then the sizes and distribution status of the dislocation vectors at each such position are categorized as characteristic quantities, and the corresponding tendencies are analyzed. Thus, stepper or wafer abnormality is detected.

Abstract: A dioxins analyzer of the present invention applies laser light of a broad spectral width to a gas or solution containing dioxins to perform laser multiphoton ionization of the dioxins, and then measures the ionized dioxins. The dioxins contained in a gas such as an exhaust gas or in water such as waste water can be analyzed in real time.

Abstract: An ion implanter comprises an ion source and a wafer support device having a rotary disk that supports a plurality of wafers thereon and is rotated about its center axis, and capable of being swung alternately in opposite directions. An ion beam emitted by the ion source is projected on the wafers for ion implantation. The wafer support device is supported so that the center of gravity of the wafer support device lies below an axis about which the wafer support device is swung alternately in opposite directions and a component of the gravitational acceleration imparted to the wafer support device acts in the same direction as a force applied to the wafer support device to reverse the same.

Abstract: The present invention relates to bi-directional raster scanning (“serpentine scanning”) for an electron beam lithography system. Improved circuit components are described for generating the true triangular waveform required in bi-directional scanning. The circuitry of the present invention provides control of signal amplitude, frequency and phase to better than 1 ppm by making use of signal generation circuitry described pursuant to the present invention. A series of coarse and fine tuning delay adjustments pursuant to the present invention accommodate a variety of operating conditions. Another embodiment of the present invention relates to an optimization of the data path hardware for bi-directional scanning, including isolating a section of the data path hardware specifically to provide calibration scans. The delay circuit built into the data preparation hardware helps compensate for delays caused by finite bandwidth in the analogue drivers.

Abstract: A process is provided for measuring the opacity in gases, especially in exhaust gases or in the atmosphere, at or near the maximum of the eye sensitivity in the green wavelength range with a central wavelength lying between 550 and 570 nm. In order, in a simple manner, to separately determine the components which are responsible for clouding in the visible wavelength range, or to make a correction possible by taking into consideration further components that have an effect in the visible range, the opacity in at least one second wavelength range which is located in the spectral between 200 nm and 2&mgr;, and which overlaps at most slightly with the first wavelength range is additionally measured.

Abstract: The present invention provides a system and method that facilitates measuring and imaging topographical features of a substrate, including lines and trenches having reentrant profiles. One aspect of the invention provides an electron microscope that simultaneously scans a substrate with two or more electron beams that are directed against the substrate with substantially differing angles of incidence. Secondary electrons resulting from the interaction of the substrate with the beams are detected by one or more secondary electron detectors. Each secondary electron detector may simultaneously receive secondary electrons resulting from the interaction of the substrate with two or more electron beams. In another of its aspects, the invention provides methods of analysis that permit the interpretation of such data to analyze critical dimensions and form images of the substrate. Critical dimensions that may be determined include feature heights and reentrant profile shapes.

Abstract: A beam/wafer alignment arrangement has a laser and sensor mounted on the scanning magnet. Direct alignment of the wafer relative to the scanning magnet is determined by reflecting the beam in a specular surface on the wafer holder back to the sensor. Correct alignment of the wafer translation direction is also confirmed from any movement of the reflected light spot on the sensor as the wafer holder is translated up and down. A further sensor is mounted on the beam stop to monitor any misalignment of the process chamber to the collimator magnet, and for checking the location of the travelling Faraday.

Abstract: In order to provide an atmospheric pressure ionization mass spectrometry apparatus in which the internal chamber of an ion source is not contaminated by ambient air, by automatically providing gas such as nitrogen to the ion source, with a simple means and without demanding a special operation by an operator when the measurement is finished, a sample solution from a liquid chromatograph is nebulized as fine droplets, each having a charge, from a nebulizer probe, and sample ions included therein are expelled into an atmosphere in the atmospheric pressure ion source and transferred to a mass spectrometer in a high vacuum part through a aperture, an intermediate pressure chamber and aperture. The ions are mass-analyzed, are detected by a detector, and mass spectra are provided and processed by a data processing device.

Abstract: The present invention is intended to detect defects in a circuit pattern formed on a semiconductor wafer by a circuit pattern forming process, to facilitates the extraction and observation of the defects, to improve the accuracy of analysis of the causes of the defects, and to determine the causes of the defects and to take measures to eliminate the causes of the defects in a greatly reduced time after the formation of the defects. A method of inspecting a circuit pattern for defects and analyzing defects, comprising locating a defect in a circuit pattern formed on a wafer by using an electron beam, specifying a chip having the defect on the basis of position data on the defect, cutting out the chip from the semiconductor wafer, thinning a portion of the chip to form a thin portion, and observing the thin portion of the chip under a transmission electron microscope to determine the causes of the defect.

Abstract: A method of producing carbon with electrically active sites includes the steps of providing a source of carbon and exposing that source to irradiation of an energy suitable to cause the photonuclear transmutation of some of the carbon atoms into boron.

Abstract: An electrospray device, a liquid chromatography device and an electrospray-liquid chromatography system are disclosed. The electrospray device comprises a substrate defining a channel between an entrance orifice on an injection surface and an exit orifice on an ejection surface, a nozzle defined by a portion recessed from the ejection surface surrounding the exit orifice, and an electrode for application of an electric potential to the substrate to optimize and generate an electrospray; and, optionally, additional electrode(s) to further modify the electrospray.

Abstract: A mask stage speed |Vm|, a wafer stage speed |Vw|, and an absolute value |&Dgr;S| of a beam deflection value are determined (step 101). Then, it is judged whether a stripe number is even or odd (step 108) and deflective directions of a mask stage, a wafer stage, and a wafer deflector are set in accordance with the above judgment result (steps 109 and 110). Then, the wafer stage and mask stage respectively start continuous movement (step 113) and divided patterns are exposed (step 115-119). It is judged whether all divided patterns are exposed (step 120). When all divided patterns are not exposed, the next divided pattern is exposed by adding a deflection value on a wafer corresponding to a beam width on a mask (step 121).

Abstract: A continuous wave electron-beam accelerator that accelerates a continuous wave electron beam having a large average current includes an electron beam generator, an electron-beam accelerating unit using a radio-frequency electric field having a frequency of approximately 500 MHz to accelerate an continuous wave electron beam, and electron-beam bending units located across the electron-beam accelerating unit and that bend the continuous wave electron beam a number of times. Each electron-beam bending unit includes divided magnets having identical-polarity magnetic fields, and controls the continuous wave electron beam so that the beam passes through the electron-beam acceleration unit a number of times on almost the same path.

Abstract: The present invention relates to detecting defects on a wafer. A wafer stage includes markings which are used to form a reference coordinate system. The wafer is positioned on the wafer stage and the wafer is scanned to detect a defect on the wafer. The position of the detected defect is mapped relative to the reference coordinate system of the stage. The location of a reference point on the wafer also is determined in the reference coordinate system. The position of the defect is determined relative to the reference point on the wafer so as to facilitate repeatedly locating the defect on the wafer as the wafer is loaded and reloaded into inspection and processing tools.

Abstract: This invention provides a mass spectrometry probe including a substrate having a surface and a film that coats the surface. The film includes openings that define features for the presentation of an analyte. The film also has a lower surface tension that the surface tension of the substrate surface, and has a water contact angle between 120° and 180°.

Abstract: An ultraviolet ozone oxidation system combines ultraviolet radiation, ozone, and heat to gently and effectively remove organic materials from a variety of substrates. The UV-ozone oxidation system includes a source of ozone which flows into a reaction chamber of the ultraviolet ozone oxidation system. The reaction chamber includes a UV lamp positioned above a heated sample stage. The heated sample stage is movably mounted such that a distance between the work piece or sample and the UV lamp can be adjusted to a minimum possible distance to improve process time. In addition, the heated sample stage is provided with a radiant heater which will provide adequate heating of the sample stage while the distance between the heater and the sample stage may be varied. The reaction chamber is also provided with a membrane diffuser which is positioned between the ozone source and the sample stage for uniformly distributing ozone to the sample on the sample stage.

Abstract: A method for determining variations in properties of a sample exposed to artificial weathering includes the steps of irradiating the sample at a wavelength substantially in the range of 295 to 400 nm in an intensity at least five times that of solar radiation, and continuously measuring intensity, spectral distribution or both intensity and spectral distribution of radiation reflected by or passing through the sample.

Abstract: An apparatus for examining a specimen with a beam of charged particles, where charging of the specimen is avoided or reduced by injecting inert gas onto the sample's surface. In order to avoid interactions with the electron optics, various embodiments are disclosed for providing a rotationally symmetrical nozzles and/or electrodes. Additionally, embodiments are disclosed wherein a plurality of gas conduits are arranged in a rotationally symmetrical manner. Alternatively, the conduit is incorporated into an element of the electron optics, such as the magnetic lens. Also, in order to reduce or eliminate interaction of the electrons with the gas molecules, embodiments are disclosed wherein the gas is pulsated, rather than continually injected.

Abstract: Image observation at high resolution is realized and irregularity information of a sample is obtained. The reflected electrons 12a emitted in a direction at a small angle with the surface of the sample 8 are detected by the detectors 10a and 10b arranged on the side of the electron source 1 of the magnetic field leakage type object lens 7 and a sample image is formed. Irregularity information of the sample is obtained from the effects of light and shade appearing in the sample image.

Abstract: A system and method for correcting automatically the distortions in electron background diffration (EBSD) patterns which result from magnetic fields produced by some scanning electron microscopes (SEMs) used for collecting such patterns from polycrystalline sample materials. The method may be implemented as a software program running on a computer which is part of a conventional system for obtaining and analyzing EBSD patterns to obtain crystallographic information about the sample material. The method includes a calibration procedure and a correction procedure. In the calibration procedure, a distorted EBSD pattern obtained from a calibration sample is displayed on an operator display and user interface. Using an input device, an operator defines segment endpoints along a Kikuchi band in the distorted EBSD pattern image. From the user defined segment endpoints, correction parameters are calculated based on a mathematical curve (e.g., cubic spline) fitting the endpoints.