Abstract: Disclosed herein is a method comprising: attaching a plurality of chips to a substrate, wherein each of the chips comprises only one pixel configured to detect radiation. Disclosed herein is a method comprising: attaching a wafer to a substrate, wherein the substrate comprises discrete electrodes, wherein the wafer comprises a radiation absorption layer and a plurality of electrical contacts, wherein each of the electrical contacts is connected to at least one of the discrete electrodes; identifying a defective area of the wafer; replacing a portion of the wafer with a chip configured to absorb radiation, the portion comprising the defective area.

Abstract: The invention relates to a method for determining the quality of an imaging plate, comprising the steps of carrying out an exposure of the imaging plate, carrying out a scan of the imaging plate in order to determine an image, determining a signal-to-noise ratio of the image or/and carrying out edge recognition on the image and calculating a quality value of the imaging plate on the basis of the signal-to-noise ratio of the image or/and on the basis of the recognized edge structure. Furthermore, the invention relates to an imaging plate scanner for carrying out such a method.

Abstract: A thermal imager device, where the thermal imager device includes a thermal imager housing. The thermal imager housing includes a display and user controls. The thermal imager device also includes a removable detector housing including a thermal detector. The thermal imager device also includes a flexible connector configured to detachably couple the removable detector to the thermal imager housing, the flexible connector including a first end, a second end, and a body between the first end and the second end, where the flexible connector is configured to detachably couple to the thermal imager housing at the first end, and where the flexible connector is configured to detachably couple to the removable detector housing at the second end.

Abstract: The present invention relates to a radioactivity measurement method and a radioactivity measurement system. A radioactivity measurement method according to the present invention comprises the steps of: measuring radioactivity while performing energy scanning and temporal scanning; preparing a database from a time-energy-related data set obtained in result of the scanning; and obtaining a radioactivity measurement value of desired time from the database.

Abstract: Systems and methods are provided which utilize optical microcavity probes to map wafer topography by near-field interactions therebetween in a manner which complies with high volume metrology requirements. The optical microcavity probes detect features on a wafer by shifts in an interference signal between reference radiation and near-field interactions of radiation in the microcavities and wafer features, such as device features and metrology target features. Various illumination and detection configurations provide quick and sensitive signals which are used to enhance optical metrology measurements with respect to their accuracy and sensitivity. The optical microcavity probes may be scanned at a controlled height and position with respect to the wafer and provide information concerning the spatial relations between device and target features.

Abstract: A gas sensor device (100) is configured to measure a predetermined gas of interest and comprises an enclosure (101) comprising a semiconductor substrate (102) and defining a first cavity (124), an optically transmissive second closed cavity (126) and a third cavity (128). The second cavity (126) is interposed between the first and third cavities (124, 128). The first cavity (124) comprises an inlet port (130) for receiving a gas under test, an outlet port (132) for venting the gas under test. The first cavity (124) also comprises an optical source (112) and a measurement sensor (114). The second cavity (126) is configured as a gaseous filter comprising a volume of the gas of interest sealingly disposed in the second cavity (126), and the third cavity (128) comprises a reference measurement sensor (116) disposed therein.

Abstract: An avalanche photodiode for detecting ultraviolet radiation, including: a silicon carbide body having a first type of conductivity, which is delimited by a front surface and forms a cathode region; an anode region having a second type of conductivity, which extends into the body starting from the front surface and contacts the cathode region; and a guard ring having the second type of conductivity, which extends into the body starting from the front surface and surrounds the anode region.

Abstract: A method and system for calibrating a PET scanner are described. The PET scanner may have a field of view (FOV) and multiple detector rings. A detector ring may have multiple detector units. A line of response (LOR) connecting a first detector unit and a second detector unit of the PET scanner may be determined. The LOR may correlate to coincidence events resulting from annihilation of positrons emitted by a radiation source. A first time of flight (TOF) of the LOR may be calculated based on the coincidence events. The position of the radiation source may be determined. A second TOF of the LOR may be calculated based on the position of the radiation source. A time offset may be calculated based on the first TOF and the second TOF. The first detector unit and the second detector unit may be calibrated based on the time offset.

Abstract: Provided is a radiation detector including a radiation detecting unit, a gate module controlling a gate line, a readout module reading out charges stored in an exposure detection pixel determined by a data line and the gate line, and an auto exposure detecting unit determining whether the radiation detecting unit is exposed to a radiation.

Abstract: Method for capturing a thermal pattern by a sensor comprising a plurality of pixels each comprising a heat-sensitive measuring element, the method comprising, for each pixel: heating the measuring element; first reading of the electrical charges outputted by the pixel during a first measurement duration and giving a first measurement value x1; second reading of the electrical charges outputted by the pixel during a second measurement duration and giving a second measurement value x2; calculating a difference x1??·x2, where ? is a positive real number, and wherein more than half of the heating duration is implemented during the first measurement duration and less than half of the heating duration is implemented during the second measurement duration.

Abstract: A radiation counting device is provided that includes a scintillator, a pixel circuit, and an analog-to-digital conversion circuit. In the radiation counting device, the scintillator generates a photon when radiation is incident. In the radiation counting device, the pixel circuit converts the photon into charge, stores the charge over a predetermined period, and generates an analog voltage in accordance with the amount of stored charge. In the radiation counting device, the analog-to-digital conversion circuit converts the analog voltage into a digital signal in a predetermined quantization unit less than the analog voltage generated from the one photon.

Abstract: Electro-optical sighting systems and methods are provided. One example includes a optical transmitter configured to emit an infrared beam along an optical path toward a target, a beam director positioned in the optical path and having a plurality of optical elements configured to direct the infrared beam and to collect reflected infrared radiation from reflection of the beam from the target, a focal plane array detector configured to receive reflected infrared radiation from the beam director, an optical phased array (OPA) positioned in the optical path between the optical transmitter and the beam director, and a controller operatively coupled to the OPA and configured to direct the OPA to defocus the infrared beam to broaden a field of view of the optical transmitter for active illumination, and focus the infrared beam to narrow the field of view of the optical transmitter for range determination and/or target designation.

Abstract: An inspection device of the present invention includes: THz wave irradiation unit for irradiating a specimen with THz waves; a THz wave sensing unit for detecting transmitted waves or reflected waves of the THz waves emitted to the specimen; and an information processing unit for acquiring intensity distribution of the transmitted waves of the reflected waves of the specimen from the intensity data of the transmitted waves or the reflected waves of the specimen irradiated with the THz waves, wherein the information processing unit acquires 2-dimensional intensity distribution of the transmitted waves or reflected waves, and detects whether a foreign matter is adhering to the specimen by comparing the intensity distribution obtained when the specimen without attachment of the foreign matter is detected and the intensity distribution obtained when the specimen is detected at the time of inspection. The specimen is a sheet of paper, for example.

Abstract: The invention is an imaging device comprising detector and collimator element (144) applied e.g. in a SPECT.

Abstract: An apparatus (201) comprises a light emitter (202) and a photodetector (203) formed on a single fluid-permeable substrate (206) such that the photodetector (203) is able to detect light emitted by the light emitter (202) after interaction of the light with a user of the apparatus (201). The photodetector comprises a channel member (207) which may be made from graphene, respective source and drain electrodes (208, 209), a layer of photosensitive material (210) configured to vary the flow of electrical current through the channel member (207) on exposure to light from the light emitter (202), and a gate electrode (211).

Abstract: A danger detector, for example a flame detector, includes an alarm housing with an alarm cover. The housing part of the alarm cover is permeable to heat radiation in the central infrared range. A non-contact, optical heat radiation sensor which is sensitive to the incoming heat radiation and optically oriented to the housing part is arranged in the alarm housing. A processing unit for further processing a sensor signal emitted by the heat radiation sensor is mounted downstream of the heat radiation sensor. The processing unit is designed to monitor the signal emitted by the sensor with respect to significant fluctuations or flicker frequencies for open flames and to determine, based on a direct component of the signal emitted by the sensor, a temperature value for the ambient temperature in the surroundings of the danger detector. The heat radiation sensor may be a thermopile or a bolometer.

Abstract: A signal acquisition device includes: a light source that oscillates pulsed laser light at a specific repetition period; an optical system that focuses the laser light onto a sample, and that collects generated fluorescence; a photodetector that detects the fluorescence collected by the optical system; an A/D converter that samples an intensity signal of the detected fluorescence, in synchronization with the repetition period of the light source unit, at a period that is an integer multiple of the repetition period, and that generates a digital intensity signal; and one or more processors comprising hardware, the one or more processors being configured to: obtain a fluorescence lifetime waveform on a basis of the generated digital intensity signal; and calculate a fluorescence lifetime coefficient from a waveform obtained by removing a region not corresponding to an exponential function from the obtained fluorescence lifetime waveform.

Abstract: A system for detecting signal components of light induced by multiple excitation sources including: a flow channel including at least two spatially separated optical interrogation zones; a non-modulating excitation source that directs a light beam of a first wavelength at a near constant intensity onto a first of the optical interrogation zones; a modulating excitation source that directs a light beam of a second wavelength with an intensity modulated over time at a modulating frequency onto a second of the optical interrogation zones; a detector subsystem comprising a set of detectors configured to detect light emitted from particles flowing through the at least two optical interrogation zones and to convert the detected light into a total electrical signal; and a processor that determines signal components from the light detected from each of the optical interrogation zones.

Abstract: An SMD-enabled infrared thermopile sensor has at least one miniaturized thermopile pixel on a monolithically integrated sensor chip accommodated in a hermetically sealed housing which consists of an at least partially non-metallic housing substrate and a housing cover. A gas or a gas mixture is contained in the housing. The sensor has a particularly low overall height, in particular in the z direction. This is achieved by virtue of an aperture opening being introduced in the housing cover opposite the thermopile pixel(s), which aperture opening is closed with a focusing lens which focuses the radiation from objects onto the thermopile pixel(s) on the housing substrate, and by virtue of a signal processing unit being integrated on the same sensor chip next to the thermopile pixels, wherein the total housing height and the housing cover are at most 3 mm or less than 2.5 mm.

Abstract: First and second pulse height detection circuits output pulse height detection signals which rise when a detection pulse obtained from a radiation detector becomes greater than a lower threshold Lsh or an upper threshold Hsh, and fall when the detection pulse is smaller than the lower threshold Lsh or the upper threshold Hsh. Next, first and second rising and falling detection circuits detect rising and falling edges of the pulse height detection signals from the first and second pulse height detection circuits in synchronization with a clock pulse from a crystal oscillator, and a combining circuit outputs a signal corresponding to the detection pulse that is within a range between the lower threshold Lsh and the upper threshold Hsh by combining both outputs from the first and second rising and falling detection circuits, in synchronization with the clock pulse.