Abstract: A very high speed, low power integrated interface circuit using GaAs or InP technology is provided for converting small digital voltage swings to larger swings which are particularly suitable for analog control signals. The preferred embodiments employ solely depletion mode MESFETS and Schottky diodes in Schottky diode field effect logic (SDFL) configurations.

Abstract: The circuit merely comprises three transistors, namely one transfer transistor (t) arranged between the input (e) and the output (a), a load transistor (l) connected as a resistor, and a clamping transistor (k), with both of the latter connecting the output (a) to the source of operating voltage (U). The interconnected gates of both the clamping and the transfer transistor (k, t) are connected to a source of reference voltage (Ur). If these two transistors (k, t) are of the depletion type, the two gates thereof may be connected to the zero point of the circuit. The circuit is particularly quick and simple.

Abstract: An I.sup.2 L output circuit is described for supplying current (I.sub.D ') to an output node (8) of a plurality of I.sup.2 L blocks (7) in order to ascertain the logic condition at the output node. The output circuit includes a standard I.sup.2 L gate (11) with an input connection (12) to the semiconductor region comprising both the lateral injector transistor collector electrode and the vertical switching transistor base electrode, and an output connection (13) from the semiconductor region comprising one of the collectors electrodes of the switching transistor. The gate output being used to control two identical current sources (T.sub.11, T.sub.12) one of which (T.sub.11) supplies current to the input of a simple current mirror (T.sub.13, T.sub.14) having its output connected to the gate input. The other current source (T.sub.12) being connected to the output node of the logic blocks. The provision of a current feedback loop around the I.sup.

Abstract: Semiconductor integrated circuit of the present invention comprises a signal output terminal, a load circuit connected to the signal output terminal, a transistor circuit which is constituted by at least one first channel MOS transistor and has an output terminal connected to the signal output terminal and an input terminal connected to a signal input terminal, and a first channel enhancement type MOS transistor that is inserted between the transistor circuit's output terminal and the signal output terminal and is made normally in an on state. It is an object of the present invention to provide a highly reliable semiconductor integrated circuit in which no deterioration of characteristics due to hot carriers occurs even when the circuit is constituted using short channel MOS transistors with an effective channel length of about 1 micron or less.

Abstract: A supergate having an enabled differential input, a single ended input and a differential output provides high speed communication between electronic cards in an electronic device. The enabled differential input is input to a differential amplifier which is electrically driven by a current source. A differential AND gate having the single ended input as an input is electrically driven by one output of the differential amplifier and provides the differential output. The other output of the differential amplifier is OR'd with one side of the differential output so that the propagation delay for the enabled differential input is essentially the same as that for the single ended input. Current steering is used to provide high speed signal flow through the differential amplifier and the differential AND gate.

Abstract: An on-chip regulated substrate bias voltage generator for an MOS integrated circuit includes a ring oscillator (10) for developing a true signal and its complement. The signals are applied to a charge pump (12) that includes two capacitors (C1 and C2) and a plurality of rectifiers (22, 24, and 26). The charge pump produces a substrate bias voltage (V.sub.BB) which is supplied to the gate of a depletion-mode field-effect transistor (28) whose source receives a reference voltage (V.sub.SS). The transistor forms part of a control circuit (14) coupled to the ring oscillator. In the N-channel case, the charge pumping action on the substrate drives the substrate bias negative until it reaches the sum of the reference voltage and threshold voltage of the depletion-mode transistor. This enables the control circuit to control the operation of the ring oscillator so as to regulate the substrate bias voltage.

Abstract: A circuit with an extremely small number of MOSFETs has a set of signals and their negatives as gate inputs to these MOSFETs which are serially connected into four rows. MOSFETs in different rows are interconected so as to produce the EXCLUSIVE-OR and the NOT-EXCLUSIVE-OR of these input signals.

Abstract: A semiconductor integrated circuit device includes a switch for switching an external clock; a signal generator for generating a power down signal for controlling said switch; said signal generator being responsive to an external signal input designating the status of the output of the microprocessor provided at the periphery of the device and an internal control signal of the device for producing said power down signal in a special combination logic state of said external signal input and said internal control signal; the device being set in a power dissipation reduction mode when said power down signal is generated.

Abstract: Three-level ECL or four-level CML are feasible when a low drop current source is incorporated in the series-gated arrangement. The low drop current source consumes less than one-tenth of the voltage span between V.sub.CC and ground. A greater portion of the voltage span between V.sub.CC and ground, up to 4 volts, is therefore reserved for the three ECL levels or four CML levels of logic. Conventional power supplies are utilized yet the number of logic functions is increased.

Abstract: A semiconductor circuit arrangement in ECL technology for realizing logic conjunctions between more than three input variables includes at least two series-gating stages having at least two ECL current switches controlled by an input variable each and each includes a reference circuit and at least one control circuit, forming logical conjunctions if connected in series and at least one diode for separating the conjunctions from each other by at least one diode threshold voltage, further including a push-pull differential amplifier forming the control circuit of each ECL current switch for forming a logical conjunction between input signals of the push-pull differential amplifier and at least one signal depending on an input variable of another voltage level.

Abstract: A circuit for controlling drain-to-source voltage in an MOS transistor. A second MOS transistor is located in series with the first transistor. The gate voltage of the second transistor is such that the drain-to-source voltages of both transistors are substantially equal.

Abstract: A CMOS logic circuit includes a first MOS transistor of one conductivity type and second and third MOS transistors of a conductivity type opposite to that of the first MOS transistor, the first to third MOS transistors being conducted in series with each other between first and second power source terminals. The gate of the first MOS transistor and the gate of one of the second and third MOS transistors commonly receive a input signal. The gate of the other of the second and third MOS transistors, serving as a correcting transistor, is connected to the first power source terminal. A series connecting point of the first and second MOS transistors serves as an output node. A channel size ratio W/L (where W is the channel width and L is the channel length) or an absolute value of a gate threshold voltage of the first MOS transistor is different from that of the correcting transistor.

Abstract: Logical NAND circuits, each consisting of a logical operational portion, an output control portion comprising the combination of a bipolar transistor and a plurality of NMOS transistors, and an output portion comprising first and second bipolar transistors connected in series between power supply voltage and the ground in which the merits of the MOS transistors and the bipolar transistors can be demonstrated by the particular combination of the two different kinds of the transistors in the logical circuit, thereby increasing the current driving performance while reducing power consumption without making the size of the logical circuit large.

Abstract: A hysteresis circuit is disclosed in which a first signal path, including a hysteresis feedback loop, is separate from a second signal path that is used to carry data. When the signal input to the hysteresis circuit (also referred to hereinafter as the "input signal") crosses a first preselected hysteresis reference of ("threshold") level, the hysteresis feedback loop, which includes threshold adjustment means, will cause a change in the threshold from the first preselected level to a second preselected level. This adjustment of threshold level will take place in parallel with the data being propagated to the output over said separate second signal path. A subsequent crossing of the second preselected threshold level by said input signal will cause the first threshold level to the reset and so on.

Abstract: The invention relates to a semiconductor device which has a high density of integration and of which a low power consumption is required. The semiconductor device prevents the influence of the amplitude of an input signal upon the amplitude of an output signal in such a way that a preceding circuit and a succeeding circuit are provided with different reference voltages. The semiconductor device is constructed of a circuit which includes a bipolar transistor and an insulated-gate field effect transistor, and which operates with reference to one or more voltages, at least one of the reference voltages having a voltage value different from a reference operating voltage of a preceding circuit.

Abstract: A bipolar writable array logic device is provided having an output representing a logical AND function and a logical OR function in response to a plurality of input signals. An AND matrix decode and an OR matrix decode are coupled to an input circuit for separately decoding a plurality of input signals. An array of collector sensed memory cells is coupled to the AND matrix decode for selecting desired rows of the collector sensed memory cells. A first plurality of sense amplifiers are coupled between the OR matrix decode and columns of the collector sensed memory cells for providing an ANDed output. Rows of an array of emitter sensed memory cells are coupled to the first plurality of sense amplifiers. A second plurality of sense amplifiers are coupled to columns of the emitter sensed memory cells for providing the bipolar writable array logic device output.

Abstract: A logic circuit on a substrate is switchable between a test mode and an operational mode. First and second NOR gates are cross-coupled and may be switched between an operational mode and a test mode by the application of a control signal to first and second transfer gates coupled to the inputs of the NOR gates. The first NOR gate includes a p-type region and an n-type region formed in said substrate and traversed with first and second conductive layers insulated from the p and n-type regions. Thus, the first NOR gate includes two p-channel transistors and two n-channel transistors. The second NOR gate is also formed by a p-type region and an n-type region traversed with third and fourth conductive layers. Thus, the second NOR gate also includes two p-channel transistors and two n-channel transistors. The transfer gates are located on the substrate between the first and second NOR gates.

Abstract: A static PLA circuit includes a logic gate portion, a precharge circuit portion and a feedback circuit portion. The feedback circuit portion is connected between the output of the logic gate portion and the input of the precharge circuit portion. The feedback circuit portion functions to delay the turn-on time of the precharge circuit portion when the output of the logic gate portion is making a high-to-low transition, thereby increasing the speed of the output transition.

Abstract: The present invention is especially directed towards an improved clocked buffer circuit that will clock, decode, repeat and invert an input signal. The clocked buffer circuit uses a clocked latch coupled to a decode circuit such that not only will the applied clock signal control the decode circuit, but the output of the latch will also control the decode circuit thus assuring the output of the decode circuit becomes latched into the set by the input clock signal.

Abstract: As the number of output circuit increases in LSI or VLSI circuit, there increases the chance of many large output circuits operates at a same instant, and it causes malfunction of logic by induced switching noise. In order to prevent such problem, the switching speed of driving buffer circuit for output buffer circuit is controlled. By reducing the switching capacity of the driving circuit, the switching speed of the total circuit is not affected so much, but the noise is decreased very much. The control of the switching capacity of the driving buffer circuit is performed by master slice technology. Such as perfectly opposite design concept to that of present LSI design has been proofed by experiments.