Patents Examined by Duy-Vu N. Deo
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Patent number: 11919051Abstract: A processing solution containing solvent and solute is supplied onto a substrate (9). The processing solution transforms into a particle retention layer as a result of at least part of the solvent being volatilized from the processing solution and causing the processing solution to solidify or harden. The particle retention layer is removed from the substrate (9) by supplying a removal liquid onto the substrate (9). A solute component contained in the particle retention layer is insoluble or poorly soluble in the removal liquid, whereas the solvent is soluble. The solute component contained in the particle retention layer has the property of being altered to become soluble in the removal liquid when heated to a temperature higher than or equal to an alteration temperature. The removal liquid is supplied after the formation of the particle retention layer, without undergoing a process of alternating the solute component.Type: GrantFiled: July 7, 2022Date of Patent: March 5, 2024Assignee: SCREEN HOLDINGS CO., LTD.Inventors: Yukifumi Yoshida, Ayumi Higuchi, Naoko Yamaguchi
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Patent number: 11912902Abstract: The present invention relates to a composition for etching, comprising a first inorganic acid, a first additive represented by Chemical Formula 1, and a solvent. The composition for etching is a high-selectivity composition that can selectively remove a nitride film while minimizing the etch rate of an oxide film, and which does not have problems such as particle generation, which adversely affect the device characteristics.Type: GrantFiled: December 21, 2018Date of Patent: February 27, 2024Inventors: Jae-Wan Park, Jung-Hun Lim, Jin-Uk Lee
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Patent number: 11908678Abstract: Processing methods may be performed to form a filled contact hole in a mirror layer of a semiconductor substrate. The method may include forming a contact hole through a mirror layer of the semiconductor substrate by an etch process. The method may include filling the contact hole with a fill material. A portion of the fill material may overlie the mirror layer. The method may also include removing a portion of the fill material external to the contact hole by chemical mechanical polishing landing on the mirror layer.Type: GrantFiled: January 14, 2021Date of Patent: February 20, 2024Assignee: Applied Materials, Inc.Inventors: Lan Yu, Benjamin D. Briggs, Tyler Sherwood, Raghav Sreenivasan, Joseph Salfelder
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Patent number: 11908680Abstract: A substrate processing method includes a first process of supplying an etching liquid to a peripheral portion of a substrate while rotating the substrate having a metal polycrystalline film formed on a front surface thereof; a second process of supplying a rinse liquid to a portion of the substrate closer to a center side of the substrate than a supply position of the etching liquid in the first process while rotating the substrate; a third process of supplying the etching liquid to the peripheral portion of the substrate while rotating the substrate; a fourth process of supplying the rinse liquid to a portion of the substrate closer to the center side of the substrate than a supply position of the etching liquid in the third process while rotating the substrate; and a fifth process of drying the substrate after the fourth process.Type: GrantFiled: December 17, 2021Date of Patent: February 20, 2024Assignee: TOKYO ELECTRON LIMITEDInventors: Akira Fujita, Kyosei Goto, Hiroki Aso, Daisuke Saiki
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Patent number: 11908691Abstract: A method of patterning a substrate. The method may include providing a surface feature on the substrate, the surface feature having a first dimension along a first direction within a substrate plane, and a second dimension along a second direction within the substrate plane, wherein the second direction is perpendicular to the first direction; and directing first ions in a first exposure to the surface feature along the first direction at a non-zero angle of incidence with respect to a perpendicular to the substrate plane, in a presence of a reactive ambient containing a reactive species; wherein the first exposure etches the surface feature along the first direction, wherein after the directing, the surface feature retains the second dimension along the second direction, and wherein the surface feature has a third dimension along the first direction different than the first dimension.Type: GrantFiled: September 23, 2022Date of Patent: February 20, 2024Assignee: Applied Materials, Inc.Inventors: Simon Ruffell, John Hautala, Adam Brand, Huixiong Dai
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Patent number: 11908710Abstract: A substrate processing apparatus includes a substrate cleaning unit cleaning a substrate, a substrate drying unit drying the substrate, and a transfer robot transferring the substrate between the substrate cleaning unit and the substrate drying unit. The substrate drying unit includes a substrate processing container having a substrate processing space accommodating the substrate, and the transfer robot includes a surface temperature measurement sensor measuring a surface temperature of the substrate processing container.Type: GrantFiled: November 8, 2021Date of Patent: February 20, 2024Assignee: SEMES CO., LTD.Inventors: Jin Woo Jung, Do Hyeon Yoon, Yong Hee Lee
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Patent number: 11901173Abstract: A substrate processing method includes a processing liquid supplying step of supplying a processing liquid to a patterned surface of a substrate having the patterned surface with projections and recesses, a processing film forming step of solidifying or curing the processing liquid supplied to the patterned surface to form, so as to follow the projections and the recesses of the patterned surface, a processing film which holds a removal object present on the patterned surface and a removing step of supplying a peeling liquid to the patterned surface to peel the processing film from the patterned surface together with the removal object, thereby removing the processing film from the substrate, while such a state is kept that the removal object is held by the processing film.Type: GrantFiled: November 16, 2021Date of Patent: February 13, 2024Inventors: Yukifumi Yoshida, Manabu Okutani, Shuichi Yasuda, Yasunori Kanematsu, Dai Ueda, Song Zhang, Tatsuro Nagahara, Takafumi Kinuta
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Patent number: 11890783Abstract: A production method of a wafer includes a wafer production step in which ultrasonic water is ejected against an end face of an ingot with cleavage layers created therein, thereby severing the wafer from a rest of the ingot to produce the wafer.Type: GrantFiled: April 16, 2021Date of Patent: February 6, 2024Assignee: DISCO CORPORATIONInventor: Xiaoming Qiu
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Patent number: 11876018Abstract: Semiconductor devices made by forming hard mask pillars on a surface of a substrate, forming sacrificial spacers on a first side of each hard mask pillar and a second side of each hard mask pillar. The open gaps may be formed between adjacent sacrificial spacers. The semiconductor devices may also be formed by etching the hard mask pillars to form pillar gaps, etching gate trenches into the substrate through the open gaps and the pillar gaps, forming a gate electrode within the gate trenches, implanting channels and sources in the substrate below the sacrificial spacers, forming an insulator layer around the sacrificial spacers, etching the sacrificial spacers to form contact trenches within the substrate, and filling the contact trenches with a conductive material to form contacts.Type: GrantFiled: December 8, 2020Date of Patent: January 16, 2024Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Mitsuru Soma, Masahiro Shimbo, Masaki Kuramae, Kouhei Uchida
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Patent number: 11875998Abstract: A substrate processing method uses a substrate processing apparatus including a process chamber defining a processing space in the process chamber, a substrate support mounted in the process chamber to place a substrate on the substrate support, a gas sprayer for supplying a process gas onto the substrate support in the processing space, and a remote plasma generator connected to the process chamber. The method includes placing the substrate on the substrate support, continuously supplying a surface processing gas through the remote plasma generator onto the substrate, continuously supplying a purge gas onto the substrate, supplying plasma power to the remote plasma generator to activate the surface processing gas and supply the activated surface processing gas onto the substrate, and cutting off the plasma power supplied to the remote plasma generator and supplying an etching gas onto the substrate.Type: GrantFiled: December 10, 2020Date of Patent: January 16, 2024Assignee: WONIK IPS CO., LTD.Inventors: Kwang Seon Jin, Jin Sung Chun, Sang Jun Park, Byung Chul Cho, Jun Hyuck Kwon
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Patent number: 11862483Abstract: A substrate processing method includes performing a liquid processing, detecting a temperature, generating temperature distribution information and determining whether a result of the liquid processing is good or bad. The liquid processing is performed on a substrate by using a processing unit. A temperature of a central portion of the substrate and a temperature of an edge portion of the substrate in the liquid processing are detected by using multiple sensors provided in the processing unit. The temperature distribution information indicating an in-surface temperature distribution of the substrate in the liquid processing is generated based on one or more parameter values defining a processing condition for the liquid processing and the temperature of the central portion of the substrate and the temperature of the edge portion of the substrate. Whether the result of the liquid processing is good or bad is determined based on the temperature distribution information.Type: GrantFiled: September 7, 2021Date of Patent: January 2, 2024Assignee: TOKYO ELECTRON LIMITEDInventor: Hiroshi Marumoto
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Patent number: 11859119Abstract: The present invention provides a chemical liquid that causes a small variation in a dissolving amount of a first metal-containing substance in a case where the chemical liquid is applied to an object to be treated containing the first metal-containing substance. The present invention also provides a method for treating an object to be treated. The chemical liquid according to an embodiment of the present invention contains water, a hydroxylamine compound selected from the group consisting of hydroxylamine and a hydroxylamine salt, and a specific compound represented by Formula (1).Type: GrantFiled: September 17, 2021Date of Patent: January 2, 2024Assignee: FUJIFILM CorporationInventors: Tomonori Takahashi, Yasuo Sugishima
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Patent number: 11850631Abstract: A system for cleaning, repairing, and/or replacing damaged shaker screens is disclosed. The system may comprise a shale shaker with a replaceable shaker screen, at least one camera, and a computer processor. The camera is positioned to capture images of the shale shaker screen and the processor is capable of receiving said images from the camera. The processor is configured to analyze the images and detect damaged regions of the shale shaker screen. The processor is also configured to determine when a screen is damaged above a pre-defined threshold. Certain embodiments allow for the automatic cleaning, repair, and/or replacement of the shaker screen.Type: GrantFiled: August 30, 2016Date of Patent: December 26, 2023Assignee: Helmerich & Payne Technologies, LLCInventor: Peter A. Torrione
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Patent number: 11851772Abstract: Compositions and methods for etching a surface of an implantable device are disclosed. The compositions generally include one or more alkali components, such as a metal hydroxide and an amine, one or more chelating agents, and optionally iron (Fe) and/or certain component metals of the metal or alloy to be etched. For example, when etching a titanium device, the metals may include titanium (Ti). Alternatively, the composition may be an electrolyte composition useful for electrochemical etching of the implantable device. These compositions and methods may generate nanoscale geometry on the surface of the implantable device to provide implants with accelerate osseointegration and healing after surgery.Type: GrantFiled: May 13, 2020Date of Patent: December 26, 2023Assignee: Tech Met, Inc.Inventors: Michael Vidra, Edward Palanko, Robert Vaccaro, Jordan Incerpi
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Patent number: 11854869Abstract: Methods of forming high aspect ratio openings. The method comprises removing a portion of a dielectric material at a temperature less than about 0° C. to form at least one opening in the dielectric material. The at least one opening comprises an aspect ratio of greater than about 30:1. A protective material is formed in the at least one opening and on sidewalls of the dielectric material at a temperature less than about 0° C. Methods of forming high aspect ratio features are also disclosed, as are semiconductor devices.Type: GrantFiled: July 7, 2022Date of Patent: December 26, 2023Inventors: Ken Tokashiki, John A. Smythe, Gurtej S. Sandhu
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Patent number: 11845406Abstract: Rigid bars to be placed upstanding at the opposite sides of a windshield and a plurality of flexible strands connected between the bars in laterally spaced apart relationship.Type: GrantFiled: April 24, 2019Date of Patent: December 19, 2023Assignee: SBCD Enterprises LLCInventor: David Svengalis
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Patent number: 11840645Abstract: A slurry for chemical mechanical polishing (CMP) includes an aqueous liquid carrier, an oxygen and anion containing transition metal compound or polyatomic cations including a transition metal and oxygen or hydrogen, and a per-based oxidizer. The anion for the oxygen and anion containing transition metal compound can include oxynitrate, oxychloride, oxyhydroxide, oxyacetate, oxysulfide, or oxysulfate. The per-based oxidizer can be a permanganate compound.Type: GrantFiled: January 30, 2021Date of Patent: December 12, 2023Assignee: ENTEGRIS, INC.Inventors: Rajiv K. Singh, Sunny De, Deepika Singh, Chaitanya Dnyanesh Ginde, Aditya Dilip Verma
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Patent number: 11839340Abstract: A dishwashing appliance includes a tub defining a wash chamber therein for receipt of articles for washing, a heating element, a sump positioned at a bottom of the wash chamber for receiving fluid from the wash chamber, a drain pump in communication with the sump, and a temperature sensor. Methods of operating the dishwashing appliance may include filling the sump with a liquid and heating the liquid by activating the heating element. Such methods also may include measuring a temperature of a liquid in the sump with the temperature sensor and comparing the measured temperature of the liquid to a minimum drain temperature threshold. Such methods may include draining the liquid from the sump after the measured temperature is equal to or greater than the minimum drain temperature threshold, such as immediately after heating the liquid.Type: GrantFiled: August 6, 2021Date of Patent: December 12, 2023Assignee: Haier US Appliance Solutions, Inc.Inventor: Leo Edward Hodapp, Jr.
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Patent number: 11833557Abstract: A device cleaning system cycles a fluid by a clogged or non-functioning device to remove the substances that are built-up on it. The fluid could be heated to facilitate removal and it is considered of importance to use a fluid that is safe environmentally. A clean and functioning verification device is run in the system to compare readings from the non-functioning device. The system is intended to run until the provide similar readings.Type: GrantFiled: March 15, 2019Date of Patent: December 5, 2023Inventors: Derrick James Hoover, Jay Riley
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Patent number: 11827988Abstract: An embodiment of the present disclosure provides an etching method, having the following steps: forming a modified layer having a thickness of one or several atom layers on a selected region of a surface of a semiconductor material layer by using a modifier; and removing the modified layer. When a semiconductor is processed, this method achieves precise control over the etching thickness and improves the etching rate at the same time.Type: GrantFiled: August 18, 2022Date of Patent: November 28, 2023Assignee: Institute of Microelectronics, Chinese Academy of SciencesInventors: Huilong Zhu, Xiaogen Yin, Chen Li, Anyan Du, Yongkui Zhang