Abstract: A method for creating a three-dimensional (3D) mark in a protective coating including at least one of a TBC and a bond coating over a metal part, is provided. The method may include positioning a mask over the protective coating, the mask including an opening pattern therein; and performing an abrasive waterjet process on the protective coating using the mask. The abrasive waterjet erodes a first portion of the protective coating exposed through the first opening pattern to create the 3D mark. The mask is removed, leaving the 3D mark in the protective coating. The 3D mark only partially penetrates through the protective coating. A metal part may include a metal body, a protective coating over the metal body, and the 3D mark in the protective coating, is also provided. The 3D mark in the protective coating may include an opening having a width of between 30 and 300 micrometers.

Abstract: A nano-indent process for creating a single photon emitter in a two-dimensional materials platform comprising the steps of providing a substrate, providing a layer of polymer, providing a layer of two-dimensional material, utilizing a proximal probe, applying mechanical stress to the layer of two-dimensional material and to the layer of polymer, deforming the layer of two-dimensional material and the layer of polymer, and forming a nano-indent in the two-dimensional material. A single photon emitter in a two-dimensional materials platform comprising a substrate, a deformable polymer film, a two-dimensional material, and a nano-indent in the two-dimensional material.

Abstract: A gas ejection apparatus ejects gas by use of a compressor that compresses the gas, and the gas ejection apparatus includes a detector and a microcomputer. The detector detects a signal relating to an ejection target device. The microcomputer controls the compressor to change a number of times of ejection of the gas in accordance with an amount of time elapsing between a detection of the signal by the detector and a next detection of the signal by the detector.

Abstract: A method and safety device for a vehicle wash tunnel with a support structure with two parallel rails for the placement, by means of corresponding carriages, of the arms of an arch which incorporates a horizontal brush capable of linear movement along the arms of the arch and the rails. The safety device includes a rotation shaft, for fastening the arms of the arch to the carriages, and an extendable cylinder, spaced from the rotation shaft, which joins each carriage to the corresponding arch, such that the arch can rotate with respect to the carriages, and the extension of the extendable cylinder causes the rotation of the arch.

Abstract: An etchant composition includes an inorganic acid compound of about 8 wt % to about 15 wt %, a sulfonic acid compound of about 2.5 wt % to about 8 wt %, a sulfate compound of about 6 wt % to about 14 wt %, an organic acid compound of about 40 wt % to about 55 wt %, a metal or metal salt of about 0.01 wt % to about 0.06 wt %, and water.

Abstract: A method for manufacturing structured press elements comprises at least the following steps: the step of providing an element of metal; the step of providing a mask on a surface of the element for shielding portions of the surface; the step of treating non-shielded portions of the surface of the element; the step of removing the mask; wherein the method comprises at least a step in which the surface of the element is subjected to an ultrasonic treatment and/or that the step of providing the mask comprises at least a treatment with infrared radiation and/or that the step of chemically treating is performed with the surface directed downward.

Abstract: A method of fabricating a multilayer superconducting printed circuit board comprises first, forming a bimetal foil to overlie a substrate, the bimetal foil comprising a first layer of a first metal, a layer of a second metal, and a second layer of the first metal, and then etching the second layer of the first metal. Forming a bimetal foil to overlie a substrate may include forming a bimetal foil comprising a first layer of a normal metal, a layer of a superconducting metal, and a second layer of the normal metal. Etching the second layer of the first metal may include preparing a patterned image in the second layer of the first metal for etching, processing the patterned image through a cleaner, rinsing the patterned image, and then, immersing the patterned image in a microetch.

Abstract: A glass substrate is reused. The mass productivity of a semiconductor device is increased. A glass substrate one surface of which includes a first material and a second material. The first material includes one or both of a metal and a metal oxide. The second material includes one or both of a resin and a decomposition product of a resin. A cleaning method of a glass substrate, which includes a step of preparing the glass substrate one surface of which includes a first material and a second material and a step of exposing the first material by removing at least part of the second material.

Abstract: A method of etching a substrate comprises: contacting a substrate having a thickness with an etchant disposed in a vessel for a period of time until the thickness has reduced by at least 2 ?m and at an average rate of 1 ?m per minute to 6.7 ?m per minute, the etchant having a temperature of 170° C. to 300° C. and comprising a molten mixture of two or more alkali hydroxides; and ceasing contacting the substrate with the etchant. The etchant in some instances comprises a molten mixture of NaOH and KOH. For example, the etchant in some instances includes a molten mixture of 24 wt. % to 72 wt. % NaOH, and 76 wt. % to 28 wt. % KOH. In some instances, the method alters the weight percentage of Na+, K+ and Li+ in the composition of the surface of the substrate by less than 1%.

Abstract: Processes for surface treatment of a workpiece are provided. In one example implementation, a method can include conducting a pre-treatment process on a processing chamber to generate a hydrogen radical affecting layer on a surface of the processing chamber prior to performing a hydrogen radical based surface treatment process on a workpiece in the processing chamber. In this manner, a pretreatment process can be conducted to condition a processing chamber to increase uniformity of hydrogen radical exposure to a workpiece.

Abstract: In a pattern formation method, a photo resist pattern is formed over a target layer to be patterned. An extension material layer is formed on the photo resist pattern. The target layer is patterned by using at least the extension material layer as an etching mask.

Abstract: A method for preparing a patterned substrate includes selectively etching any one segment block of a self-assembled block copolymer from a laminate having a substrate; wherein a block copolymer membrane is formed on the substrate and the substrate contains the self-assembled block copolymer. According to the method, the self-assembled pattern of the block copolymer can be efficiently and accurately transferred on the substrate to prepare a patterened substate.

Abstract: A method for manufacturing a microfluidic device includes providing a first substrate having a first surface and a second surface located opposite the first surface. An etching mask is produced on the first surface, the etching mask having an opening. A recess is produced by etching in the first surface in a region of the opening. An electrically conductive material is deposited on the etching mask and/or a layer covering the etching mask, and on a region of a bottom of the recess below the opening.

Abstract: A polishing method using a polishing pad including a specific adsorption layer. The polishing pad has an adsorption layer including a silicone including linear polyorganosiloxane having vinyl groups only at both ends, and the like. The polishing pad is fixed to a surface plate, and a product to be polished is pressed against the polishing pad, and simultaneously slid to polish the product to be polished. In this case, the surface roughness (Ra) of the surface plate is set to 0.01 to 0.7 ?m, and the adsorption layer of the polishing pad is then adsorbed and fixed to the surface plate to perform polishing work. By adjusting the surface roughness of the surface plate as described above, a surface of the product to be polished can be inhibited from being unpredictably scratched or roughened. The method for adjusting the surface roughness of the surface plate is preferably a method in which a film having a surface roughness as described above is bonded to a surface of the surface plate.

Abstract: Methods and composition sets for forming etch-resist masks on a metallic surface are provided. The method may include depositing a first aqueous composition comprising a first reactive component onto a metallic layer of a substrate; depositing a second aqueous composition comprising a second reactive component on selected portions of the deposited first aqueous composition to form, from a chemical reaction between the first reactive component and the second reactive component, a bi-component material mask in a pattern to protect selected regions of the metallic layer; and depositing an etch solution to remove the metallic layer in regions not protected by the bi-component material mask.

Abstract: A manufacturing method of a semiconductor structure includes at least the following steps. A patterned mask layer with a first opening is formed on a dielectric layer overlying a semiconductor substrate. A portion of the dielectric layer accessibly exposed by the first opening of the patterned mask layer is removed to form a second opening. A first protective film is formed on inner sidewalls of the dielectric layer and the patterned mask layer, where the second opening and the first protective film are formed at the same step. A second protective film is formed on the first protective film to form a protective structure covering the inner sidewalls. A portion of the semiconductor substrate accessibly exposed by the second opening is removed to form a via hole including an undercut underlying the protective structure. The via hole is trimmed and a through substrate via is formed in the via hole.

Abstract: A polishing liquid for polishing a surface to be polished containing cobalt, the polishing liquid containing abrasive grains, at least one sugar component selected from the group consisting of a sugar alcohol, a sugar alcohol derivative, and a polysaccharide, an acid component, and water, in which a pH of the polishing liquid is more than 8.0.

Abstract: A method may include providing a set of features in a mask layer, wherein a given feature comprises a first dimension along a first direction, second dimension along a second direction, orthogonal to the first direction, and directing an angled ion beam to a first side region of the set of features in a first exposure, wherein the first side region is etched a first amount along the first direction. The method may include directing an angled deposition beam to a second side region of the set of features in a second exposure, wherein a protective layer is formed on the second side region, the second side region being oriented perpendicularly with respect to the first side region. The method may include directing the angled ion beam to the first side region in a third exposure, wherein the first side region is etched a second amount along the first direction.

Abstract: Provided herein are polishing pads in which microcapsules that include a polymer material and are dispersed, as well as methods of making and using the same. Such microcapsules are configured to break open (e.g., when the polishing pad is damaged during the dressing process), which releases the polymer material. When contacted with ultraviolet light the polymer material at least partially cures, healing the damage to the polishing pad. Such polishing pads have a longer lifetime and a more stable remove rate when compared to standard polishing pads.

Abstract: A cleaning method for a by-product including a refractory material or a metal compound includes a reforming process and an etching process. In the reforming process, a surface of the by-product is reformed using nitrogen-containing gas and hydrogen-containing gas. In the etching process, the reformed surface is etched using halogen-containing gas and inert gas.