Abstract: A display device includes: a bending region including a bending peripheral opening passing through the first interlayer insulating film and the first gate insulating film and a bending opening in the bending peripheral opening and passing through the second interlayer insulating film and the buffer layer to expose the substrate, a first sidewall of the bending peripheral opening includes a side surface of the first interlayer insulating film and a side surface of the first gate insulating film, the second interlayer insulating film covers the first sidewall of the bending peripheral opening, the bending opening includes a second sidewall including a side surface of the buffer layer and a portion of a side surface of the second interlayer insulating film arranged with the side surface of the buffer layer, and the first via layer fills the bending opening.

Abstract: The present disclosure provides an array substrate and a method for manufacturing the same, and a display device. The array substrate includes a plurality of pixel units arranged in a matrix, each the pixel unit includes a plurality of pixel regions, each pixel region is provided with a display electrode having a slit; a plurality of data lines, each of the data lines includes a plurality of data line segments, any two adjacent data line segments are electrically coupled to each other; in each of the pixel units, each of a part of the pixel regions has a display electrode whose slit is parallel to a data line segment adjacent to this display electrode in the data lines; each of another part of the pixel regions has a display electrode whose slit is non-parallel to a data line segment adjacent to this display electrode in the data lines.

Abstract: An organic light-emitting diode display substrate, a manufacturing method of the same, and an organic light-emitting diode display device are disclosed by the application. The display substrate comprises a substrate, and the substrate comprises a light-emitting region and nonlight-emitting region, wherein the light-emitting region comprises a plurality of data lines and a plurality of scan lines which are arranged in rows and columns respectively and perpendicular to each other and a plurality of pixel unit regions defined by the plurality of data lines and the plurality of scan lines, wherein each of the pixel unit regions comprises a plurality of sub-pixels, the scan lines of each of the sub-pixels in adjacent pixel unit regions of the same row are merged between the adjacent pixel unit regions, and the data lines in adjacent pixel unit regions of the same column are merged between the adjacent pixel unit regions.

Abstract: The present disclosure provides a display panel and a method for manufacturing the same, and a display device. The display panel includes: a substrate; a pixel unit array disposed on one side of the substrate, wherein the pixel unit array comprises a plurality of pixel units, at least one of the plurality of pixel units comprising an anode layer, a cathode layer, and a light emitting layer located between the anode layer and the cathode layer, the cathode layer defining an opening configured to transmit a light emitted from the light emitting layer; and at least one sensor disposed on one side of the pixel unit array away from the substrate and configured to detect a light transmitted through the opening.

Abstract: A display device includes: a base substrate having a display region including a first region and a second region, and a non-display region; a first semiconductor layer including polysilicon at the second region; a first conductive layer on a first insulating layer, and including a bottom gate electrode at the first region and a second-first gate electrode at the second region; a second semiconductor layer including an oxide on a second insulating layer at the first region; a second conductive layer on a third insulating layer, and including a top gate electrode at the first region and a second-second gate electrode at the second region; and a third conductive layer on a fourth insulating layer, and including a first source electrode and a first drain electrode connected to the second semiconductor layer, and a second source electrode and a second drain electrode connected to the first semiconductor layer.

Abstract: An electronic device can include a substrate, an active region of a transistor, and a shield electrode. The substrate can define a trench and include a mesa adjacent to the trench, and the shield electrode can be within the trench. In an embodiment, the electronic device can further include an active region of a transistor within the mesa and an insulating layer including a thicker section and a thinner section closer to a bottom of the trench. In another embodiment, the electronic device can include a body region and a doped region within the mesa and spaced apart from the body region by a semiconductor region. The doped region can have a dopant concentration that is higher than a dopant concentration of the semiconductor region and a portion of the substrate underlying the doped region.

Abstract: A transparent display substrate, a manufacturing method thereof, and a transparent display device are disclosed. The transparent display substrate includes a base substrate and a pixel defining layer defining a plurality of pixel regions on the base substrate; at least one of the pixel regions includes a light-transmitting portion and a light-emitting portion, and is provided with an OLED layered portion and an auxiliary electrode; the OLED layered portion includes a reflective anode, an organic light-emitting layer and a transmissive cathode; and the auxiliary electrode is located in the light-transmitting portion, disposed at a side of the transmissive cathode close to the base substrate, and connected to the transmissive cathode.

Abstract: A flexible electroluminescent display apparatus can include a flexible substrate including an active area and a bending area extending from the active area; a thin film transistor disposed on the active area and including a semiconductor layer, a gate electrode, a source electrode and a drain electrode; an planarization layer disposed on the thin film transistor; a light emitting element disposed on the planarization layer in the active area and connected to the thin film transistor through a connection electrode; and a first wiring line and a second wiring line disposed in the bending area, in which the first wiring line, the source electrode and the drain electrode are configured as a same layer, and the second wiring line and the connection electrode are configured as a same layer, and the first wiring line and the second wiring line are directly connected to each other.

Abstract: An infrared photodetector including a stack of layers on a substrate having an active area made of organic semiconductor materials capable of converting an infrared radiation into an electric signal and including, in said stack and/or on the substrate, a single layer at least partially filtering visible light.

Abstract: A thin film transistor structure and a manufacturing method thereof, a circuit structure, a display substrate and a display device are provided. The thin film transistor structure includes: a base plate, and a first thin film transistor and a second thin film transistor stacked on the base plate. The first thin film transistor and the second thin film transistor share a same active layer.

Abstract: The present disclosure provides a display panel and a method for manufacturing the same, and a display device. The display panel includes: a substrate; a pixel unit array disposed on one side of the substrate, wherein the pixel unit array comprises a plurality of pixel units, at least one of the plurality of pixel units comprising an anode layer, a cathode layer, and a light emitting layer located between the anode layer and the cathode layer, the cathode layer defining an opening configured to transmit a light emitted from the light emitting layer; and at least one sensor disposed on one side of the pixel unit array away from the substrate and configured to detect a light transmitted through the opening.

Abstract: A display device includes: a pixel at a display region. The pixel includes: a light-emitting element connected between a first power source and a second power source; and a first transistor connected between the first power source and the light-emitting element, the first transistor to control a driving current of the light-emitting element in response to a voltage of a first node. The first transistor includes a first driving transistor and a second driving transistor that are connected in series with each other between the first power source and the light-emitting element, and the first driving transistor and the second driving transistor have structures that are asymmetric with each other in a cross-sectional view.

Abstract: A display panel and a method of manufacturing the display panel, and a display device are disclosed. The display panel includes a display area and a non-display area. The display area includes a first display area and a second display area both bendable in relation to each other. The display panel includes a base substrate, a thin-film transistor layer, and a sensor. One or a plurality of through holes or grooves are disposed on the thin-film transistor layer, and the second is disposed facing the through hole or the groove.

Abstract: A display substrate and a manufacturing method thereof are disclosed. The display substrate is divided to have a non-pixel region and a color pixel region. The manufacturing method includes: forming a thin film transistor (TFT) on a base substrate in the non-pixel region; forming a passivation layer on the TFT; forming a color filter on the passivation layer in the color Pixel region; forming a planarization layer on the passivation layer and the color filter; thinning a thickness of a portion of the planarization layer located in the color pixel region; and forming a display electrode on the planarization layer and connecting the display electrode to a drain electrode of the TFT through a via hole.

Abstract: The embodiment of the present disclosure discloses an array substrate, a fabrication method thereof, and a display device. The array substrate includes: a base substrate and a plurality of pixel units on the base substrate, wherein the pixel unit includes a plurality of sub-pixels; and the sub-pixel includes an electroluminescent component, a pixel circuit and a photo detection circuit; the pixel circuit includes a drive transistor for driving the electroluminescent component to emit light, and the drive transistor is a low temperature poly-si thin film transistor; and the photo detection circuit includes a detection switch transistor and a PIN-type photodiode, and the detection switch transistor is a metal oxide transistor.

Abstract: The present invention provides a display panel, which comprises at least one region to be cut and a functional region; the cross-sectional structure of the display panel comprises a substrate including a first sub-portion corresponding to a position of the region to be cut; a blocking part arranged on the first sub-portion; and a packaging layer arranged on the blocking part, and the contact surface of the packaging layer and the blocking part is a concave-convex surface. The display panel can improve the packaging effect.

Abstract: A method of manufacturing a display panel and the display panel are provided. The method of manufacturing the display panel includes providing a substrate; depositing a transparent electrode layer and a first metal layer on the substrate, and etching the transparent electrode layer and the first metal layer to form a light-shielding layer and an anode; forming a buffer layer, an oxide layer, and an insulating layer on the light-shielding layer in sequentially, and the buffer layer and the insulating layer are formed by a same photomask; depositing a second metal layer on the insulating layer and etching the second metal layer to form a source, a gate, and a drain; and forming a pixel defining layer, a light-emitting layer, and a cathode layer on the second metal layer in sequentially.

Abstract: A display panel includes a switching transistor and a light-emitting transistor. The switching transistor includes a first gate electrode, a first source electrode, a first active layer, and a first drain electrode. The light-emitting transistor includes a second gate electrode, a second source electrode, a second active layer, a light-emitting layer, and a second drain electrode. The second gate electrode is the first drain electrode of the switching transistor. The switching transistor and the light-emitting transistor may be on a substrate. The switching transistor, the second source electrode, the second active layer, the light-emitting layer, and the second drain electrode are stacked in a direction perpendicular to the surface of the substrate.

Abstract: A display apparatus includes pixel units each of which includes a first light emitting portion, a second light emitting portion, and a third light emitting portion, each emitting a different color light. The display apparatus includes a thin film transistor substrate, a first light emitting group disposed on the thin film transistor substrate and including eight first light emitting portions included in different pixel units, a second light emitting group disposed on the thin film transistor substrate and including eight second light emitting portions included in different pixel units, and a third light emitting group disposed on the thin film transistor substrate and including four third light emitting portions included in different pixel units.

Abstract: A display substrate includes a base substrate; and a plurality of light emitting brightness value detectors on the base substrate. Each of the plurality of light emitting brightness value detectors includes a first thin film transistor; a protection layer on a side of the first thin film transistor away from the base substrate; and a photosensor electrically connected to the first thin film transistor and configured to detect alight emitting brightness value. An orthographic projection of the protection layer on the base substrate covers an orthographic projection of at least a channel part of the first thin film transistor on the base substrate.