Abstract: A method for manufacturing a wiring board according to the present disclosure includes: in the following order, (a) a step of irradiating an insulating layer composed of a resin composition with active energy rays; (b) a step of adsorbing an electroless plating catalyst to the insulating layer; and (c) a step of forming a metal layer on a surface of the insulating layer by electroless plating, in which in the step (a), a modified region having a thickness of 20 nm or more in a depth direction from the surface of the insulating layer and voids communicating from the surface of the insulating layer is formed by irradiation of the active energy rays.

Abstract: A method of producing a glass article includes holding a carrier having a circular shape, in which a glass substrate having a circular shape is retained, with an upper surface plate and a lower surface plate; and polishing the glass substrate by rotating the carrier with respect to the upper surface plate and the lower surface plate, to obtain the glass article. The glass substrate is disposed in the carrier such that, in a top plan view, a center of the carrier is included in a region of the glass substrate, and a center of the glass substrate is shifted from the center of the carrier.

Abstract: A silicon carbide wafer manufacturing method includes: a bending measuring step of measuring a first edge having the greatest degree of a bending at one surface of a silicon carbide ingot having one surface; a cutting start step of starting a cutting at a second edge having a distance of r×a along an edge of the one surface from the first edge in a direction parallel to or with a predetermined off angle with respect to the one surface through the wire saw, a cutting speed being decreased to a first cutting speed in the cutting start step; a cutting proceeding step in which the first cutting speed is substantially constant within a variation of about ±5% of the first cutting speed; and a finish step in which the cutting speed is increased from the first cutting speed and the cutting of the silicon carbide ingot is completed.

Abstract: The present invention provides: a temporary adhesive for wafer processing, said temporary adhesive being used for the purpose of provisionally bonding a wafer to a support, while being composed of a photocurable silicone resin composition that contains a non-functional organopolysiloxane; a wafer processed body; and a method for producing a thin wafer, said method using a temporary adhesive for wafer processing.

Abstract: A device (1?, 1?, 1??) for manufacturing III-V-crystals and wafers (14) manufactured therefrom, which are free of residual stress and dislocations, from melt (16) of a raw material optionally supplemented by lattice hardening dopants comprises a crucible (2?, 2?, 2??) for receiving the melt (16) having a first section (4?, 4?) including a first cross-sectional area and a second section (6?) for receiving a seed crystal (12) and having a second cross-sectional area, wherein the second cross-sectional area is smaller than the first cross-sectional area and the first and second sections are connected with each other directly or via third section (8, 8?) which tapers from the first section towards the second section, in order to allow a crystallization starting from the seed crystal (12) within the directed temperature field (T) into the solidifying melt.

Abstract: A automobile laminated glass according to the present invention includes: a first glass plate that is formed into a rectangular shape; a second glass plate that is disposed so as to face the first glass plate, and is formed into a rectangular shape; an intermediate film that is disposed between the first glass plate and the second glass plate; a functional layer that is disposed between the first glass plate and the second glass plate; and an obstructing layer that is laminated on a peripheral edge portion of at least one of the first glass plate and the second glass plate, wherein the functional layer is formed so that an outer edge of at least a portion of the functional layer is located outward of an inner edge of the obstructing layer.

Abstract: The invention relates to a two-dimensional crystal wafer of group 13 or III element nitride which is delimited by a face of orientation N, an opposing face of orientation E depending on the group 13 or III element, E being selected preferably from Ga, In, Al or a combination of these elements, characterized in that the variation in crystalline off-cut angle in the largest dimension of said wafer is less than 5×10-3°/mm, and its curvature of geometric deformation of its faces exhibits a flexure in terms of absolute value of less than 10-3 mm/mm of the largest dimension of said wafer.

Abstract: To provide a glass substrate with an antireflection film, which employs glass having high refractive index and which has excellent strength, and an optical member comprising it. A glass substrate with an antireflection film, comprising a glass substrate which consists of glass having refractive index (nd) of from 1.68 to 2.00 and which has plate thickness of from 0.01 to 2 mm, and an antireflection film formed on at least one principal plane of the glass substrate.

Abstract: In the SiC substrate, when resistivities at a plurality of first measurement points that are in a region inside a boundary located 5 mm inward from an outer circumferential end thereof and that include a center and a plurality of measurement points separated by 10 mm from each other in the [11-20] direction or the [?1-120] direction from the center, and at two second measurement points that are located 1 mm inward from the outer circumferential end and located in each of the [11-20] direction from the center and the [?1-120] direction from the center are measured, a difference between the maximum resistivity and the minimum resistivity among the resistivities of each of the plurality of first measurement points and the two second measurement points is 2 m?·cm or less, and a region other than a high nitrogen concentration region called a facet is included.

Abstract: Provided is an indium phosphide substrate, a semiconductor epitaxial wafer, a method for producing an indium phosphide single-crystal ingot and a method for producing indium phosphide substrate capable of suppressing concave defects. An indium phosphide substrate has a diameter of 100 mm or less, and at least one of surfaces has zero concave defects detected in the topography channel, by irradiating a laser beam of 405 nm wavelength with S-polarized light on the surface.

Abstract: An indium phosphide single crystal including a straight body portion having a cylindrical shape, wherein a residual strain in a tangential direction in an outer circumferential portion is a compressive strain, the outer circumferential portion extending between an inner circumferential surface located 10 mm inward from an outer circumferential surface of the straight body portion toward a central axis and a location located 5 mm inward from the outer circumferential surface. There is also provided an indium phosphide single crystal substrate, wherein a residual strain in a tangential direction in an outer circumferential portion is a compressive strain, the outer circumferential portion extending between an inner circumference located 10 mm inward from an outer circumference toward a center and a location located 5 mm inward from the outer circumference.

Abstract: Provided is a silicone rubber molded body (1) including a conductive ink coating layer (3) that is disposed on a portion of the surface of the silicone rubber molded body (1). The conductive ink coating layer (3) contains a hydrolyzable organosilicon compound. Using the silicone rubber molded body with a saturated water absorption of 0.10 to 1.50% by mass and/or using a conductive ink containing water improves the affinity between the surface of the silicone rubber molded body (1) and the conductive ink coating layer (3). A residual ink area is an average of 20% or more and 100% or less after the conductive ink coating layer (3) is subjected to an abrasion test. With this configuration, the silicone rubber molded body has a high affinity between the silicone rubber and the conductive ink, good durability under continuous stress, and stability in long-term use. Further provided is a method for producing the silicone rubber molded body.

Abstract: A silicon carbide substrate has a first main surface and a second main surface opposite to the first main surface. The silicon carbide substrate includes screw dislocations and pits having a maximum diameter of 1 ?m or more and 10 ?m or less in a direction parallel to the first main surface. When the screw dislocations and the pits are observed in the first main surface, a percentage obtained by dividing a number of the pits by a number of the screw dislocations is 1% or less. A concentration of magnesium in the first main surface is less than 1×1011 atoms/cm2.

Abstract: An aspect of the present invention relates to a resin composition containing a polyphenylene ether compound having at least one of the groups represented by Formulas (1) and (2); and an allyl compound having a group represented by Formula (3).

Abstract: A SiC single crystal, wherein difference between the curving amount of the atomic arrangement surface on the cut surface cut along the <1-100> direction through the center in plan view and the curving amount of the atomic arrangement surface on the cut surface cut along the <11-20> direction that passes through the center of view and is perpendicular to the <1-100> direction is 60 ?m or less.

Abstract: A gallium arsenide single crystal substrate having a main surface, in which a ratio of the number of As atoms existing as diarenic trioxide to the number of As atoms existing as diarsenic pentoxide is greater than or equal to 2 when the main surface is measured by X-ray photoelectron spectroscopy, in which an X-ray having energy of 150 eV is used and a take-off angle of a photoelectron is set to 5°. Arithmetic average roughness (Ra) of the main surface is less than or equal to 0.3 nm.

Abstract: The invention relates to a two-dimensional crystal wafer of group 13 or III element nitride which is delimited by a face of orientation N, an opposing face of orientation E depending on the group 13 or III element, E being selected preferably from Ga, In, Al or a combination of these elements, characterized in that the variation in crystalline off-cut angle in the largest dimension of said wafer is less than 5×10-3°/mm, and its curvature of geometric deformation of its faces exhibits a flexure in terms of absolute value of less than 10-3 mm/mm of the largest dimension of said wafer.

Abstract: A ribbon is formed such that the ribbon floats on a melt using a cold initializer facing an exposed surface of the melt. The ribbon is single crystal silicon. The ribbon is pulled from the silicon melt at a low angle off the melt surface. The ribbon is formed at a same rate as the pulling. The ribbon is separated from the melt at a wall of the crucible where a stable meniscus forms. The ribbon has a thickness between a first surface and an opposite second surface from 50 ?m to 5 mm. The ribbon includes a first region extending a first depth from the first surface. The first region has a reduced oxygen concentration relative to a bulk of the ribbon.

Abstract: A heterogeneous composite material and a method for manufacturing the heterogeneous composite material are provided. The heterogeneous composite material includes a first compression structure formed by compressing a first material, and a second compression structure formed by compressing a second material different from the first material, and disposed in close contact with the first compression structure, wherein at least a portion of the first compression structure and at least a portion of the second compression structure are disposed on both sides of a boundary surface existing in a circular shape with a predetermined radius with respect to a central axis in a state in contact with each other at the boundary surface.

Abstract: A polycrystalline CVD synthetic diamond material is provided that has an average thermal conductivity at room temperature through a thickness of the polycrystalline CVD synthetic diamond material of between 1700 and 2400 Wm?1K?1, a thickness of at least 2.5 mm and a visible transmittance through the thickness of the polycrystalline CVD synthetic diamond of at least 25%. A wafer comprising the material is also provided, wherein at least 70% of a total area of the wafer has the properties of the polycrystalline CVD synthetic diamond material. A method for fabricating the wafer is also disclosed.