Abstract: A film forming apparatus for forming a plurality of films on a substrate through a continuous process, comprising a plurality of vacuum chambers in communication to each other via connection, at least vacuum chamber having internally a treatment detachable from the vacuum chamber for fulfilling a predetermined treatment on the substrate.

Abstract: Several techniques may be used for forming a colored interference filter coating on a substrate such as polyester film. The interference filter has two metal reflective films, at least one of which is semi-transparent. A layer of transparent acrylate polymer dielectric between the metal layers completes the interference filter, which may be sandwiched between protective layers. The dielectric is formed by evaporating an acrylate monomer having a molecular weight in the range of from 150 to 600. Preferably the acrylate monomer has a molecular weight to acrylate group ratio in the range of from 150 to 400. The acrylate condenses on the substrate and is polymerized in situ for forming a monolithic film with a sufficient thickness to produce an interference color. In several embodiments different areas of the film have different thicknesses for producing different interference colors.

Abstract: A wafer lift assembly including an RF shunt is provided. An insulating rim is connected to a powered lift cylinder via a conductive screw. The head of the screw is recessed below a top surface of the rim. A cover is arranged over top of the rim and screw. The RF shunt is a layer of conductive material arranged between the rim and the cover.

Abstract: An object is to make it possible to prevent electron temperature distribution from becoming uneven at surface of a process object when dimensions of the process object are large. A region division unit 30 encloses the inside of a ring-shaped discharge electrode 15 in the vicinity of that discharge electrode 15, thereby dividing the interior region of a tube-shaped vacuum vessel 11 in a direction perpendicular to the center axis Z thereof into a plasma generation region R1 and a plasma diffusion region R2, This region division unit 30 has a tube-shaped grid 301. This grid 301 has a plurality of electron passing holes and exhibits electrical conductivity. This grid 301, furthermore, is set in place concentrically with the vacuum vessel 11 so as to be positioned on the outside of a substrate W.

Abstract: An apparatus and methods for an upgraded CVD system that provides a plasma for efficiently cleaning a chamber, according to a specific embodiment. Etching or depositing a layer onto a substrate also may be achieved using the upgraded CVD system of the present invention. In a specific embodiment, the present invention provides an easily removable, conveniently handled, and relatively inexpensive microwave plasma source as a retrofit for or a removable addition to existing CVD apparatus. In a preferred embodiment, the remote microwave plasma source efficiently provides a plasma without need for liquid-cooling the plasma applicator tube. In another embodiment, the present invention provides an improved CVD apparatus or retrofit of existing CVD apparatus capable of producing a plasma with the ability to efficiently clean the chamber when needed.

Abstract: A dual plate gas assisted heater module having a vertically movable poppet movable between an upper and a lower subchamber has a passive heating feature which preheats a substrate prior to introducing it into a subchamber for active heating.

Abstract: A substrate treating apparatus for subjecting a substrate to a treatment including a heating or cooling treatment has a plate for heating or cooling the substrate. The plate has a plurality of holes formed therein and is arranged to be positioned under the substrate. A plurality of lifter pins for moving the substrate up and down are inserted in the holes, respectively, formed in the plate, and are incorporated with the plate to be movable up and down. A plurality of springs are arranged to bias the lifter pins downward, respectively. A push-up mechanism is used for pushing up the lifter pins while being in contact with bottom ends of the lifter pins. The push-up mechanism is arranged to be separable from the lifter pins. A driving mechanism is arranged to drive the push-up mechanism.

Abstract: A multi-thermal zone shielding apparatus provides a multi-zone temperature profile for the shield while shielding a portion of a hot workpiece in a high temperature processing system. The apparatus keeps the workpiece temperature hot at the shielded area and maintaining the rest of the shield cooler. The apparatus comprises a multi-thermal zone shield having a low thermal transmitivity section for preventing the heat lost of the shielded portion of the hot workpiece due to less thermal energy transmitting through the shielding portion of the shield, thus maintaining a more uniform temperature at the shielded portion of the workpiece, and a high thermal transmitivity section in the rest of shield for allowing more thermal energy from the hot workpiece transmitting through the shield without heating the shield, thus maintaining a cooler temperature at the portion of the shield not engaged with the workpiece.

Abstract: A method is provided for etching and removing extraneous molybdenum or debris on ceramic substrates such as semiconductor devices and also for molybdenum etching in the fabrication of molybdenum photomasks. The method employs a multi-step process using an acidic aqueous solution of a ferric salt to remove (etch) the molybdenum debris followed by contacting the treated substrate with an organic quaternary ammonium hydroxide to remove any molybdenum black oxides which may have formed on the exposed surface of treated molybdenum features in ceramic substrates. The method is environmentally safe and the waste solutions may be easily waste treated for example by precipitating the ferric salts as ferric hydroxide and removing anions such as sulfate by precipitation with lime. The method replaces the currently used method of employing ferricyanide salts which create serious hazardous waste disposal and environmental problems.

Abstract: A general method of the invention is to provide a polymer-hardening precursor piece (such as silicon, carbon, silicon carbide or silicon nitride, but preferably silicon) within the reactor chamber during an etch process with a fluoro-carbon or fluoro-hydrocarbon gas, and to heat the polymer-hardening precursor piece above the polymerization temperature sufficiently to achieve a desired increase in oxide-to-silicon etch selectivity. Generally, this polymer-hardening precursor or silicon piece may be an integral part of the reactor chamber walls and/or ceiling or a separate, expendable and quickly removable piece, and the heating/cooling apparatus may be of any suitable type including apparatus which conductively or remotely heats the silicon piece.

Abstract: A plasma processing system includes a reactor having a plasma source and a substrate holder. The reactor is configured by a top plate made of a nonmagnetic metal, a bottom plate made of a metal, and a cylindrical side wall having at least in part a section made of ceramic. The substrate holder is placed in the bottom plate. A plurality of magnets is separately arranged on the top plate. The polarity of the magnets facing the inside of the reactor is alternately changed, and the magnets generate a magnetic field with closed magnetic fluxes near to the inner surface of the top plate.

Abstract: A susceptor is disclosed for minimizing or eliminating thermal gradients that affect a substrate wafer during epitaxial growth. The susceptor comprises a first susceptor portion including a surface for receiving a semiconductor substrate wafer thereon, and a second susceptor portion facing the substrate-receiving surface and spaced from the substrate-receiving surface. The spacing is sufficiently large to permit the flow of gases therebetween for epitaxial growth on a substrate on the surface, while small enough for the second susceptor portion to heat the exposed face of a substrate to substantially the same temperature as the first susceptor portion heats the face of a substrate that is in direct contact with the substrate-receiving surface.

Abstract: A manufacturing apparatus for semiconductor devices comprises as a halogen scavenger a silicon ring (12) having an average surface roughness of 1-1000 &mgr;m, arranged around a silicon substrate (6) on a lower electrode (3) in a reaction chamber (7); and an upper silicon element (5) as another halogen scavenger, having an average surface roughness of 1-1000 &mgr;m, arranged above the silicon substrate (6). In this apparatus, C2F6 is used as a gas to be introduced into the chamber (7) and fluorine can be effectively scavenged in the initial phase of operation, so that semiconductor devices can be aged faster than in conventional apparatus.

Abstract: A multiple step chemical vapor deposition process for depositing a tungsten film on a substrate. A first step of the deposition process includes a nucleation step in which a process gas including a tungsten-containing source, a group III or V hydride and a reduction agent are flowed into a deposition zone of a substrate processing chamber while the deposition zone is maintained at or below a first pressure level. During this first deposition stage, other process variables are maintained at conditions suitable to deposit a first layer of the tungsten film over the substrate. Next, during a second deposition stage after the first stage, the flow of the group III or V hydride into the deposition zone is stopped, and afterwards, the pressure in the deposition zone is increased to a second pressure above the first pressure level and other process parameters are maintained at conditions suitable for depositing a second layer of the tungsten film on the substrate.

Abstract: Vacuum treatment system for application of thin layers onto substrates (36, 38, 40, 42) with a transfer chamber (5) and several treatment chambers (6, 8, 10, 12), said treatment chambers peripherally attached to the transfer chamber and being connected to said transfer chamber by means of a common opening (27, 29, 31, 33) for inlet and outlet of substrate (36, 38, 40, 42), and with a handling device (24) for transport of the substrate (36, 38, 40, 42) between the treatment chambers (6, 8, 10, 12), whereby the handling device (24) has at least one substrate holder (37, 39, 41, 43) with one pivot and/or rotating retaining part to hold the substrates (36, 38, 40, 42), by means of which the substrates (36, 38, 40, 42) can pivot and/or rotate in the treatment chambers (6, 8, 10, 12).

Abstract: A plasma processing module for processing a substrate includes a plasma containment chamber having a feed gas inlet port capable of allowing a feed gas to enter the plasma containment chamber of the plasma processing module during the processing of the substrate. An inductively coupled source is used to energize the feed gas and striking a plasma within the plasma containment chamber. The specific configuration of the inductively coupled source causes the plasma to be formed such that the plasma includes a primary dissociation zone within the plasma containment chamber. A secondary chamber is separated from the plasma containment chamber by a plasma containment plate. The secondary chamber includes a chuck and an exhaust port. The chuck is configured to support the substrate during the processing of the substrate and the exhaust port is connected to the secondary chamber such that the exhaust port allows gases to be removed from the secondary chamber during the processing of the substrate.

Abstract: A substrate-holding apparatus for holding a semiconductor substrate in a semiconductor processor is characterized in that the apparatus includes a mount block made of an aluminum alloy wrought product and having a mount surface for mounting a semiconductor thereon, a heating block with a heater body embedded therein for heating the semiconductor substrate, and a shield member made of an aluminum alloy wrought product for housing the heating block. The mount plate is securely attached to the heating block by brazing or with bolts.

Abstract: A plasma treatment system (200) for implantation with a novel susceptor with shielding (203). The system (200) has a variety of elements such as a chamber in which a plasma is generated in the chamber. The system (200) also has a susceptor disposed in the chamber to support a substrate. A shield (203) is disposed adjacent to the susceptor for blocking impurities that may possibly be introduced from a backside of the susceptor. The shield allows fewer impurities to be sputtered from the backside of the susceptor. In a specific embodiment, the chamber has a plurality of substantially planar rf transparent windows (26) on a surface of the chamber. The system (200) also has an rf generator (66) and at least two rf sources in other embodiments.

Abstract: The invention provides a deposition system and methods of depositing materials onto substrates. In one aspect, a modular processing chamber is provided which includes a chamber body defining a processing region. The chamber body includes a removable gas feedthrough, an electrical feedthrough, a gas distribution assembly mounted on a chamber lid and a microwave applicator for generating reactive gases remote from the processing region.

Abstract: A method of treatment of a freon gas consisting only of carbon and fluorine is provided, wherein the freon gas is exposed to a plasma to decompose and chemically activate the freon gas. The freon gas having been chemically activated is then made into contact with a reactant to form a reaction product.