Abstract: The present invention provides systems, methods and apparatus for high temperature (at least about 500-800.degree. C.) processing of semiconductor wafers. The systems, methods and apparatus of the present invention allow multiple process steps to be performed in situ in the same chamber to reduce total processing time and to ensure high quality processing for high aspect ratio devices. Performing multiple process steps in the same chamber also increases the control of the process parameters and reduces device damage. In particular, the present invention can provide high temperature deposition, heating and efficient cleaning for forming dielectric films having thickness uniformity, good gap fill capability, high density, low moisture, and other desired characteristics.

Abstract: Ionizable gas supplied to an electron cyclotron resonance vacuum plasma processor chamber for semiconductor wafers is excited to a plasma state by microwave energy coupled to the chamber. The level of microwave power reflected from the chamber controls the level of microwave power derived from a source driving the ionizable gas in the chamber.

Abstract: An apparatus and method for depositing thin films on the surface of a device such as a spherical shaped devices. The apparatus includes an enclosure containing a plurality of apertures and a conductor coil. The apertures connect to conduits for inputting and outputting the devices as well as injecting and releasing different gases and/or processing constituents. A chamber is formed within the enclosure and is configured to be coaxial with the conductor coil. Devices move through the input conduit where they are preheated by a resistance-type furnace. The preheated devices then move into the chamber where they are further heated by radio frequency energy from the conductor coil. At this time, the gases and/or processing constituents react with the heated device thereby growing a thin film on its outer surface.

Abstract: A chemical vapor deposition system is provided. The chemical vapor deposition system is used to deposit an inorganic layer on a silicon wafer. The chemical vapor deposition system includes a reactor chamber, a particle trap, a gate valve, and a vacuum system. The vacuum system forces a gas out of the reactor chamber and through the particle trap and the gate valve. When the gate valve opens and closes, particles inside the valve can contaminate the reactor chamber and the vacuum system. The particle trap has a reservoir in which particles in the gas may become trapped before they reach the gate valve. The particle trap helps prevent the particles from becoming trapped in the gate valve.

Abstract: A method for six-sided painting of parts, such as boards, the parts having a top, bottom, sides, and ends, in a vacuum painting system having a feed conveyor, a vacuum painting chamber, and a take-out conveyor wherein the a first part is placed end-to-end with a second part on the feed conveyor, each part having a leading end and a trailing end, and the first part and second part enter the vacuum painting chamber end-to-end, the parts exiting the vacuum painting chamber onto the take-out conveyor end-to-end with the leading end of each part exiting the vacuum painting chamber first, consisting of the steps of:(a) sensing the presence of the leading end of the first part along the take-out conveyor while the trailing end of the first part is within the vacuum painting chamber;(b) moving a movable carriage along the take-out conveyor toward the vacuum painting chamber to a position intermediate the leading end and trailing end of the first part;(c) moving the movable carriage a short distance along the take-out

Abstract: An electron beam source provides beam focusing by placing magnets under the crucible. The location of the magnets, operating in conjunction with the remaining magnetic and electromagnetic structure, permits varying sizes of crucibles to be used without redesign of the remainder of the electron beam source.

Abstract: This invention relates to an evaporation installation of the type including a frame rotatably hanging around a first vertical shaft and supporting at least three arms for receiving at least three concave supports of wafers to be processed, rotatably mounted around secondary shafts supported by the arms, the arms being inscribed in a cone which is coaxial to the first shaft so that the secondary shafts have a rotating motion in a plane perpendicular to the vertical shaft. The supports are disposed so as to overlap.

Abstract: In the course of processing integrated circuits production wafers are placed within a plurality of production boats on a platform. A first baffle boat is placed at a front end of the plurality of production boats. The first baffle boat contains a first plurality of wafers made of quartz. A second baffle boat is placed at a rear end of the plurality of production boats. The second baffle boat contains a second plurality of wafers made of quartz. The plurality of production boats, the first baffle boat and the second baffle boat are placed within a processing chamber.

Abstract: An apparatus for adjusting the tension on a heating filament in a reactor used in carbon deposition on a substrate via chemical-vapor deposition is disclosed, as is a method for preventing breakage of the filaments during operation. The apparatus comprises a force regulator attached to an array of heating filaments. Preferably, the force regulator is adjustable and is adjusted prior to reactor operation and/or periodically or continuously as the filaments lengthen due to carburization in the carbon-vapor environment of the reactor. The adjustable force regulator attached to an array of filaments enables effective regulation of the force on a filament during reactor operation and provides an easily-maintained reactor with quick turn-around time between cycles of use.

Abstract: A process-gas supply apparatus for supplying a process gas to a process chamber in which a predetermined processing using the process gas is applied to the object set therein, which comprising a process-gas source for supplying a process gas, a carrier gas source filled with a carrier gas, at least one gas storing section having a predetermined volume and to be filled with the process gas, a carrier-gas introducing pipe connecting the carrier gas source to the process chamber to introduce the carrier gas from the carrier gas source to the process chamber, a process-gas releasing pipe connected to the process-gas source, a process-gas filling circuit having at least one pipe which connects the at least one gas storing section to the process-gas releasing pipe and is provided with at least one open/shut valve, a process gas releasing circuit having at least one pipe which connects the gas storing section to the carrier-gas introducing pipe and is provided with at least one open/shut valve, a controlling section

Abstract: A plasma ashing chamber that uses an external radiant power source to uniformly heat the wafer is provided with a double plate window through which radiant heat and exhaust gases flow without interfering with each other.

Abstract: A substrate holder to support a substrate in a vertical position in a substrate processing device that performs a process on the substrate, where the process involves forming a plasma in the space around the substrate. The substrate holder includes a base plate and a plurality of supporting claws that are attached to the base plate and arranged so as to come into contact with the outer edge of the substrate and provide vertical support for the substrate. At least one of the plurality of supporting claws is a movable supporting claw that can be brought into contact with and separated from the outer edge of the substrate. When a substrate has been loaded into the holder, the space around the substrate is substantially filled by the base plate or by a member attached to the base plate.

Abstract: Disclosed is a wafer stage allowing a plasma process under a heating condition at a high temperature, particularly, 400.degree. C. or more using the improved electrostatically chucking technology with the increased temperature-controllability. The wafer stage includes an electrostatic chuck and a temperature adjusting jacket disposed under said electrostatic chuck. The electrostatic chuck includes: a dielectric member made from an insulating material; an electrode formed of a brazing layer, which is disposed on the underside of said dielectric member for fixing said dielectric member; an aluminum nitride plate disposed on the underside of said electrode, to which said dielectric member is fixed through said electrode; a heater, disposed on the underside of said aluminum nitride plate, for heating said dielectric member; and a metal plate disposed on the underside of said aluminum nitride plate and also at least on a top or bottom side of said heater.

Abstract: A substrate processing system configured for processing a substrate utilizing source gas released from at least one gas jet into a substrate processing chamber of the substrate processing system. The substrate processing system includes a first gas port configured to introduce the gas jet into the substrate processing chamber and a directional blocking wall protruding above a plane formed by the opening of the first gas port. The directional blocking wall is disposed closer to a first portion of a circumference of the first gas port than a second portion of the circumference.

Abstract: The dry etching device according to the present invention comprises a vacuum chamber connected to a vacuum source, a gas supply unit including a gas supply source and a number of gas supply pipes for leading a gas from the gas supply source to an inside of the vacuum chamber, and a number of electrical discharge electrodes, respectively arranged inside the vacuum chamber, for changing the gas led to the inside of the vacuum chamber into a plasma, active ions or both of the plasma and the active ions, wherein the electrical discharge electrode has a number of circular or polygonal ring shaped permanent magnets detachably interfitted into a shaft at regular intervals via each insulator in a magnetizing direction of the each permanent magnet, and aligned so that each magnet pole of the permanent magnets adjacent to each other may be equal to that of the adjacent permanent magnet.

Abstract: Apparatus for reducing a material deposition in a housing is disclosed herein. The apparatus includes: a first pressure sensing device which senses a pressure in a reaction chamber, a pumping device for pumping the vapor from the reaction chamber to the pumping device, a valve that is opened when the pressure is larger than a first value and smaller than a second value, a bypass valve which is closed when the pressure is larger than the third value and smaller than the fourth value, a check valve that blocks a gas flow from the check valve to the bypass valve, and a pipe for connecting all of the above.

Abstract: A process and apparatus for deposition of a carbon-rich coating onto a moving substrate is provided. The process and apparatus involve the creation of an electric field surrounding a rotatable electrode in a carbon-containing gaseous environment. This results in carbon-rich plasma formation, wherein the electrode is negatively biased with respect to the electrode which results in ion acceleration from the plasma toward the electrode. Ion bombardment continuously occurs on a substrate in contact with the electrode producing a continuous carbon-rich coating over the length of the substrate.

Abstract: An electrostatic chucking mechanism including an electrode body, a dielectric block placed on the front of the electrode body and having a dielectric portion to be dielectrically polarized for electrostatically chucking an object to be chucked, and an intermediate layer placed between the electrode body and the dielectric block. The intermediate layer is formed of a metal such as indium having extendibility for absorbing thermal deformation of the electrode body or the dielectric block and is heated and pressurized, thereby joining the electrode body and the dielectric block. A thin film of indium, chrome, or the like, is prepared on the junction face of the dielectric block, enhancing a junction force and adhesion by the intermediate layer.

Abstract: Gas diffuser bolt (35) is used to improve process gas flow from near the center of process chamber (40) across workpiece (58) to exhaust ports near the periphery of process chamber (40), process nonuniformity is improved by adjusting the vertical position of each varying magnetic pole (10) relative to two-pole rounded oblong dielectric window (22), differential driving of metal voltage reference plate (18) and workpiece electrode (60) reduce the voltage between the plasma and process chamber (40), reducing particulates and improving efficiency, and temperature control of metal voltage reference plate (18) improves process chamber (40) cleaning.