Abstract: A method of fabrication a package and a stencil structure are provided. The stencil structure includes a first carrier having a groove and stencil units placed in the groove of the first carrier. At least one of the stencil units is slidably disposed along sidewalls of another stencil unit. Each of the stencil units has openings.

Abstract: Some embodiments include an integrated assembly having a memory array region, a staircase region, and an intervening region between the staircase region and the memory array region. The intervening region includes first and second slabs of insulative material extending through a stack of alternating insulative and conductive levels. Bridging regions are adjacent to the slabs. First slits are along the bridging regions, and second slits extend through the slabs. First panels are within the first slits, and second panels are within the second slits. The second panels are compositionally different from the first panels. Some embodiments include methods of forming integrated assemblies.

Abstract: An electronic package and a manufacturing method thereof, which embeds an electronic structure acting as an auxiliary functional component and a plurality of conductive pillars in an encapsulation layer, and disposes an electronic component on the encapsulation layer, so as to facilitate electrical transmission with the electronic component in a close range.

Abstract: An integrated circuit package includes a substrate including at least one electrical connection to at least one of power or ground. The package further includes a bridge structure including at least one layer of conductive material and at least one layer of insulative material. The bridge structure is configured to be coupled to the substrate such that the conductive material is electrically connected to the at least one electrical connection. The bridge structure includes a side pad made of conductive material that is electrically connected to the at least one electrical connection. The side pad is in direct contact with the conductive material and with the insulative material of the bridge structure. The side pad forms an end face of the bridge structure such that the conductive material of the side pad is exposed.

Abstract: A method for preparing a crystalline semiconductor layer in order for the layer to be provided with a specific lattice parameter involves a relaxation procedure that is applied for a first time to a first start donor substrate in order to obtain a second donor substrate. Using the second donor substrate as the start donor substrate, the relaxation procedure is repeated for a number of times that is sufficient for the lattice parameter of the relaxed layer to be provided with the specific lattice parameter. A set of substrates may be obtained by the method.

Abstract: A method for forming a chip package structure is provided. The method includes forming a dielectric layer over a redistribution structure. The redistribution structure includes a dielectric structure and a plurality of wiring layers in or over the dielectric structure. The method includes forming a first conductive bump structure and a shield bump structure over the dielectric layer. The first conductive bump structure is electrically connected to the wiring layers, and the shield bump structure is electrically insulated from the wiring layers. The method includes bonding a first chip structure to the redistribution structure through the first conductive bump structure. The first chip structure is electrically insulated from the shield bump structure, and the first chip structure extends across a first sidewall of the shield bump structure.

Abstract: A package structure is provided. The package structure includes a redistribution structure and a semiconductor die over the redistribution structure, and bonding elements below the redistribution structure. The semiconductor die has a first sidewall and a second sidewall connected to each other. The bonding elements include a first row of bonding elements and a second row of bonding elements. In a plan view, the second row of bonding elements is arranged between the first row of bonding elements and an extending line of the second sidewall. A minimum distance between the second row of bonding elements and the first sidewall is greater than the minimum distance between the first row of bonding elements and the first sidewall.

Abstract: An organic light-emitting display device includes: a substrate; a pixel electrode on the substrate; a pixel defining layer having a first opening exposing a center portion of the pixel electrode; a barrier layer on the pixel defining layer; an intermediate layer including a first common layer, a first emissive layer, and a second common layer sequentially arranged on the pixel electrode, the pixel defining layer, and the barrier layer; and a first opposite electrode covering the intermediate layer. The barrier layer has a second opening that is larger than the first opening and has an undercut structure.

Abstract: A semiconductor package and a method of forming the same are provided. The semiconductor package includes a package substrate and a semiconductor device mounted on the surface of the package substrate. A first ring is disposed over the surface of the package substrate and surrounds the semiconductor device. A second ring is disposed over the top surface of the first ring. Also, a protruding part and a matching recessed part are formed on the top surface of the first ring and the bottom surface of the second ring, respectively. The protruding part extends into and engages with the recessed part to connect the first ring and the second ring. An adhesive layer is disposed between the surface of the package substrate and the bottom surface of the first ring for attaching the first ring and the overlying second ring to the package substrate.

Abstract: Multi-component modules (MCMs) including configurable electromagnetic interference (EMI) shield structures, and related methods are disclosed. An EMI shield enclosing an IC or another electrical component in an MCM can protect other components within the MCM from EMI generated by the enclosed component. The EMI shield also protects the enclosed component from the EMI generated by other electrical components. An EMI shield with side-wall structures, in which vertical conductors supported by a wall medium electrically couple a lid of the EMI shield to a ground layer in a substrate, provides configurable EMI protection in an MCM. The EMI shield may also be employed to increase heat dissipation. The side-wall structures of the EMI shield are disposed on one or more sides of an electrical component and are configurable to provide a desired level of EMI isolation.

Abstract: The present disclosure relates to micro-via structures for interconnects in advanced wafer level semiconductor packaging. The methods described herein enable the formation of high-quality, low-aspect-ratio micro-via structures with improved uniformity, thus facilitating thin and small-form-factor semiconductor devices having high I/O density with improved bandwidth and power.

Abstract: An electronic device package includes a first substrate, a second substrate and a conductive layer. The first substrate includes a first bonding pad, and a cavity exposing the first bonding pad. The second substrate is laminated on the first substrate. The second substrate includes a second bonding pad at least partially inserting into the cavity of the first substrate. The conductive layer is disposed in the cavity and at least between the first bonding pad and the second bonding pad to connect the first bonding pad and the second bonding pad.

Abstract: Various noise isolation structures and methods for fabricating the same are presented. In one example, a substrate for chip package is provided. The substrate includes a core region, top build-up layers and bottom build-up layers. The top build-up layers are formed on a first side of the core region and the bottom build-up layers are formed on a second side of the core region that is opposite the first side. Routing circuitry formed in the bottom build-up layers is coupled to routing circuitry formed in the top build-up layers by vias formed through the core region. A void is formed in the bottom build-up layers. The void is configured as a noise isolation structure. The void has a sectional area that is different in at least two different distances from the core region.

Abstract: In one example, a semiconductor device includes a substrate having a substrate first side, a substrate second side opposite to the substrate first side, and a conductive structure including internal terminals over the substrate first side; and external terminals over the substrate second side and coupled to the internal terminals. An electronic component includes an electronic component first side, an electronic component second side opposite to the electronic component first side, and an electronic component lateral side connecting the electronic component first side to the electronic component second side. The electronic component second side is coupled to one or more of the internal terminals. A guide structure is over the substrate first side and can include an inner portion that is laterally inward from the electronic component lateral side and an outer portion that is laterally outward from the electronic component lateral side.

Abstract: A semiconductor package including a redistribution substrate including an insulating layer and redistribution patterns in the insulating layer may be provided. Each of the redistribution patterns may include a via portion, a pad portion vertically overlapping the via portion, and a line portion extending from the pad portion. The via portion, the pad portion, and the line portion may be connected to each other to form a single object. A level of a bottom surface of the pad portion may be lower than a level of a bottom surface of the line portion. A width of the line portion may have a largest value at a level between a top surface of the line portion and the bottom surface of the line portion.

Abstract: Disclosed are semiconductor devices and methods of fabricating the same. The method comprises providing a carrier substrate that includes a conductive layer, placing a semiconductor die on the carrier substrate, forming an insulating layer to cover the semiconductor die on the carrier substrate, forming a via hole to penetrate the insulating layer at a side of the semiconductor die and to expose the conductive layer of the carrier substrate, performing a plating process in which the conductive layer of the carrier substrate is used as a seed to form a via filling the via hole, forming a first redistribution layer on a first surface of the semiconductor die and the insulating layer, removing the carrier substrate, and forming a second redistribution layer on a second surface of the semiconductor die and the insulating layer, the first surface and the second surface being located opposite each other.

Abstract: Methods of depositing a metal film with high purity are discussed. A catalyst enhanced CVD process is utilized comprising an alkyl halide catalyst soak and a precursor exposure. The precursor comprises a metal precursor having the general formula (I): M-L1(L2)y, wherein M is a metal, L1 is an aromatic ligand, L2 is an aliphatic ligand, and y is a number in the range of from 2 to 8 to form a metal film on the substrate surface, wherein the L2 comprises 1,5-hexdiene, 1,4-hexadiene, and less than 5% of 1,3-hexadiene. Selective deposition of a metal film with high purity on a metal surface over a dielectric surface is described.

Abstract: A semiconductor package including a redistribution substrate with a first insulating layer, one or more second insulating layers on the first insulating layer, and a plurality of redistribution layers. The first insulating layer includes a first photosensitive resin having an elongation of 60% or more and toughness of 70 mJ/mm3 or more. The one or more second insulating layers include a second photosensitive resin having an elongation in a range of 10% to 40% and toughness of 40 mJ/mm3.

Abstract: A method of making a semiconductor arrangement includes forming a first layer of molecular ions in a first wafer interface region of a first wafer, forming a second layer of molecular ions in a second wafer interface region of a second wafer, forming a first molecular bond connecting the first wafer interface region to the second wafer interface region by applying pressure to at least one of the first wafer or the second wafer in a direction toward the first wafer interface region and the second wafer interface region, and annealing the first wafer and the second wafer to form a second molecular bond connecting the first wafer interface region to the second wafer interface region.

Abstract: A semiconductor device has a heat spreader with an opening formed through the heat spreader. The heat spreader is disposed over a substrate with a semiconductor die disposed on the substrate in the opening. A thermally conductive material, e.g., adhesive or an elastomer plug, is disposed in the opening between the heat spreader and semiconductor die. A conductive layer is formed over the substrate, heat spreader, and thermally conductive material.