Abstract: A displaying base plate and a fabricating method thereof. The displaying base plate includes a substrate, and a first flat layer on one side of the substrate; a first metal layer on one side of the first flat layer that is further away from the substrate; a second flat layer on sides of the first metal layer and the first flat layer that are further away from the substrate; and a second metal layer on one side of the second flat layer that is further away from the substrate; wherein the first metal layer includes a first metal trace, an orthographic projection of the second metal layer on the substrate and an orthographic projection of the first metal trace on the substrate have an overlapping part, and an orthographic projection of the second flat layer on the substrate covers the orthographic projection of the first metal trace on the substrate.

Abstract: A bottom-emission light-emitting diode (LED) display includes a transparent substrate, a plurality of LEDs bonded on the substrate, a packaging layer formed on the substrate to cover the LEDs, and a reflecting layer formed on the packaging layer to reflect light emitted by the plurality of LEDs. The reflecting layer has a non-smooth shape or the packaging layer has different refractivities.

Abstract: Described herein is a technique capable of efficiently removing a foreign substance in a reaction tube. According to one aspect of the technique, there is provided a substrate processing apparatus including: a reaction tube in which a substrate is processed; and a substrate retainer including a plurality of support columns configured to support the substrate, wherein at least one among the plurality of the support columns includes: a hollow portion through which an inert gas is supplied; and a gas supply port through which the inert gas is supplied toward an inner wall of the reaction tube.

Abstract: A unit pixel includes a transparent substrate, a plurality of light emitting devices arranged on the transparent substrate, connection layers electrically connected to the light emitting devices, and bonding pads disposed over the connection layers and electrically connected to the connection layers. The bonding pads are partially overlapped with at least one of the light emitting devices in a vertical direction, respectively.

Abstract: Provided is a display apparatus including a substrate having a display area including a main pixel, and a sensor area including a sub-pixel and a transmission portion, a plurality of first lines arranged in the sensor area, extending in a first direction, and bypassing the transmission portion, and a first electrode layer under the plurality of first lines, between the sub-pixel and the transmission portion, and at least partially overlapping a spacing region between the plurality of first lines.

Abstract: An optoelectronic package structure and a method of manufacturing an optoelectronic package structure are provided. The optoelectronic package structure includes a photonic component. The photonic component has an electrical connection region, a blocking region and a region for accommodating a device. The blocking region is located between the electrical connection region and the region for accommodating a device.

Abstract: A bezel-less display panel, a display device, and a spliced display device are disclosed. The bezel-less display panel includes a first display area, a second display area around the first display area, and a third display area around the second display area. The third display area is not provided with a subpixel driving thin-film transistor. Some of driving thin-film transistors in the second display area are connected to light-emitting subpixels in the third display area through a plurality of metal lines.

Abstract: Capacitor structures, and apparatus containing similar capacitor structures, might include a first conductive region having a first portion and second and third portions extending from an upper surface of its first portion, a second conductive region having a first portion and a second portion extending from an upper surface of its first portion, a dielectric overlying the second portion of the first conductive region, a conductor overlying the dielectric, and a conductive element overlying the third portion of the first conductive region and overlying the second portion of the second conductive region, wherein the first conductive region has a first conductivity type and the second conductive region has a second conductivity type different than the first conductivity type.

Abstract: A semiconductor device includes a semiconductor layer with opposing first and second main surfaces and a first column extending from the first main surface and having a first concentration of a dopant of the first conductivity type. A trench with a sidewall and bottom extends at least partially through the semiconductor layer from the first main surface. A second column between the trench sidewall and the first column has a second concentration of a dopant of a second conductivity type and is formed in the semiconductor layer and extends from the first main surface. A trench oxide layer is in contact with at least the trench sidewall and the trench bottom. A trench nitride layer covers the trench oxide layer at least on the trench sidewall. A dielectric seal material seals the trench proximate the first main surface of the semiconductor layer such that the trench is air-tight.

Abstract: Solid-state radiation transducer (SSRT) devices and methods of manufacturing and using SSRT devices are disclosed herein. One embodiment of the SSRT device includes a radiation transducer (e.g., a light-emitting diode) and a transmissive support assembly including a transmissive support member, such as a transmissive support member including a converter material. A lead can be positioned at a back side of the transmissive support member. The radiation transducer can be flip-chip mounted to the transmissive support assembly. For example, a solder connection can be present between a contact of the radiation transducer and the lead of the transmissive support assembly.

Abstract: According to one aspect of the technique, there is provided a method of manufacturing a semiconductor device, including: (a) forming a first oxide layer by modifying a surface of a substrate at a first temperature with a plasma of a first oxygen-containing gas; and (b) forming a second oxide layer thicker than the first oxide layer by heating the substrate to a second temperature higher than the first temperature and modifying the surface of the substrate, on which the first oxide layer is formed, with a plasma of a second oxygen-containing gas.

Abstract: The present disclosure relates to a light-emitting device. The light-emitting device includes a substrate, a first light-emitting chip, a first wavelength conversion member, and a barrier member. The first light-emitting chip is mounted on the substrate. The first wavelength conversion member covers the upper surface of the first light-emitting chip. A first reflective member covers the side surface of the first wavelength conversion member. Further, the barrier member includes an outer wall surrounding the side surfaces of the first light-emitting chip and the first reflective member.

Abstract: A light-emitting unit includes: a wiring board; light-emitting elements on the wiring board; a light reflecting member on the wiring board, the light reflecting member covering a lateral surface of each of the light-emitting elements; wavelength conversion layers each provided on or above an emission surface of a corresponding one of the plurality of light-emitting elements; light reflecting layers on the wavelength conversion layers, respectively; and a protecting layer configured to transmit light and provided on the light reflecting member. The light-transmitting protecting layer covers at least a lateral surface of the wavelength conversion layers and at least a lateral surfaces of the light reflecting layers. An upper surface of the protecting layer has a first recess in a region where the plurality of light reflecting layers are not present in a top view. The first recess includes at least one concave surface.

Abstract: Provided is an integrated circuit device including: a plurality of fin-type active regions protruding from a top surface of a substrate and extending in a first horizontal direction; at least one semiconductor layer, each including a lower semiconductor layer and an upper semiconductor layer sequentially stacked on at least one of the plurality of fin-type active regions; and a plurality of gate electrodes extending in a second horizontal direction crossing the first horizontal direction on the plurality of fin-type active regions, wherein the lower semiconductor layer includes a same material as a material of the upper semiconductor layer, and wherein a semiconductor interface is provided between the lower semiconductor layer and the upper semiconductor layer.

Abstract: The present disclosure provides a display device and a manufacturing method thereof. The display device includes: a substrate; a conductive layer disposed on the substrate; and a reflective layer disposed on the conductive layer; wherein a plurality of flask-shaped holes are disposed in the reflective layer and part of the conductive layer, and a depth of each of the flask-shaped holes is greater than a thickness of the reflective layer.

Abstract: A display apparatus including a plurality of display modules each including a module substrate and a plurality of light emitting devices mounted on the module substrate, and a support substrate on which the display modules are disposed and including conductive members, in which the module substrates includes a plurality of recesses depressed from at least one end surface of the module substrate, and connection electrodes formed in the recesses, and the light emitting devices are electrically connected to the conducive members of the support substrate through the connection electrodes.

Abstract: Disclosed are a panel capable of performing transparent display, a display device and a vehicle-mounted display device. A transmission part includes an organic light-emitting diode so as to perform light emission as well as display, thereby increasing an emission area, reducing the driving voltage required for emission driving, and consequently increasing the lifespan of the display device.

Abstract: A sensor element with excellent characteristics is provided. An electronic device including a power storage system with excellent characteristics is provided. A vehicle including a power storage system with excellent characteristics is provided. A novel semiconductor device is provided. The power storage system includes a storage battery, a neural network, and a sensor element; the neural network includes an input layer, an output layer, and one or a plurality of middle layers provided between the input layer and the output layer; a value corresponding to a first signal output from the sensor element is supplied to the input layer; the first signal is an analog signal; the sensor element includes a region in contact with a surface of the storage battery; and the sensor element has a function of measuring one or both of strain and temperature.

Abstract: An optoelectronic module is provided that has a carrier element, an optoelectronic element on the carrier element, a cover, and a cavity. The cover has a frame surrounding the optoelectronic element and connected to the carrier element. A glass element is on the frame lying substantially opposite the carrier element for the input and/or output of electromagnetic radiation. The cavity is inside a volume that is delimited by an inner surface of the cover and a surface of the carrier element. The optoelectronic element is arranged in the cavity and enclosed by the cover hermetically and/or in an autoclavable fashion. A filler material is in the cavity to compensate for an expansion of a volume occupied by the filler material and has a first deformable compensation volume, which is arranged adjacent to a subregion of the cover and/or of the carrier element.

Abstract: A method includes obtaining sensor data associated with a deposition process performed in a process chamber to deposit a film stack on a surface of a substrate, wherein the film stack comprises a plurality of layers of a first material and a plurality of layers of a second material. The method further includes obtaining metrology data associated with the film stack. The method further includes training a first machine-learning model based on the sensor data and the metrology data, wherein the first machine-learning model is trained to generate predictive metrology data associated with layers of the first material. The method further includes training a second machine-learning model based on the sensor data and the metrology data, wherein the second machine-learning model is trained to generate predictive metrology data associated with layers of the second material.