Abstract: A transmitting apparatus is provided. The transmitting apparatus includes: an encoder configured to generate a low-density parity check (LDPC) codeword by LDPC encoding based on a parity check matrix; an interleaver configured to interleave the LDPC codeword; and a modulator configured to map the interleaved LDPC codeword onto a modulation symbol, wherein the modulator is further configured to map a bit included in a predetermined bit group from among a plurality of bit groups constituting the LDPC codeword onto a predetermined bit of the modulation symbol.

Abstract: A method of testing a three dimensional (3D) memory cell array includes writing data to each layer of memory cells in the 3D memory cell array, simultaneously performing a read operation of each memory cell in at least a first pillar of the 3D memory cell array, determining whether a memory cell in the 3D memory cell array has failed in response to the read operation, and replacing at least one failed memory cell in the 3D memory cell array with a spare memory cell in response to determining that the memory cell in the 3D memory cell array has failed. The first pillar includes memory cells on each corresponding layer of the 3D memory cell array.

Abstract: The present disclosure relates to an apparatus comprising a non-volatile memory architecture configured to be coupled to a System-on-Chip (SoC) device. The non-volatile memory device coupled to the SoC having a structurally independent structure linked to the SoC includes a plurality of sub arrays forming a matrix of memory cells with associated decoding and sensing circuitry, sense amplifiers coupled to a corresponding sub array, a data buffer comprising a plurality of JTAG cells coupled to outputs of the sense amplifiers; and a scan-chain connecting together the JTAG cells of the data buffer.

Abstract: Methods, systems, and devices for scrub rate control for a memory device are described. For example, during a scrub operation, a memory device may perform an error correction operation on data read from a memory array of the memory device. The memory device may determine a quantity of errors detected or corrected during the scrub operation and determine a condition of the memory array based on the quantity of errors. The memory device may indicate the determined condition of the memory array to a host device. In some cases, the memory device may perform scrub operations based on one or more condition of the memory array. For example, as a condition of the memory array deteriorates, the memory device may perform scrub operations at an increased rate.

Abstract: A method of testing a memory device includes steps as follows. Commands that meet a specification of the memory device are used. A random decision is performed on the plurality of commands to generate varied patterns, so that a testing device can test the memory device according to the varied patterns, where each of the varied patterns includes a sequence of one or more commands randomly selected from the plurality of commands.

Abstract: Methods, systems, and devices for error correction management are described. A system may include a memory device that supports internal detection and correction of corrupted data, and whether such detection and correction functionality is operating properly may be evaluated. A known error may be included (e.g., intentionally introduced) into either data stored at the memory device or an associated error correction codeword, among other options, and data or other indications subsequently generated by the memory device may be evaluated for correctness in view of the error. Thus, either the memory device or a host device coupled with the memory device, among other devices, may determine whether error detection and correction functionality internal to the memory device is operating properly.

Abstract: A memory device comprises a memory array; a word line driver circuit including a charge pump circuit configured to generate a program voltage target to be applied to a word line to program a memory cell of the memory array, and a control loop to activate the charge pump circuit using a control signal according to a comparison of a pump circuit output voltage to a specified duty cycle after the charge pump circuit output reaches the program voltage target, and provides an indication of current generated by the charge pump circuit according to the duty cycle; and logic circuitry that generates a fault indication when the current generated by the charge pump circuit is greater than a specified threshold current.

Abstract: A device includes an interface configured to connect to a communication link. A controller of the device is configured to generate a redundancy code using first data and second data, and to transmit the redundancy code together with the first data to the interface.

Abstract: A plurality of failure domains are communicatively coupled to each other via a network, and each of the plurality of failure domains is coupled to one or more storage devices. A failure resilient stripe is distributed across the plurality of storage devices, such that two or more blocks of the failure resilient stripe are located in each failure domain.

Abstract: A method and a decoder for receiving a message encoded in Turbo Codes and modulated for transmission as an analog signal includes: (a) demodulating the analog signal to recover the Turbo Codes; and (b) decoding the Turbo Codes to recover the message using an iterative Turbo Code decoder, wherein the decoding includes performing an error detection after a predetermined number of iterations of the Turbo Code decoder to determine whether or not an error has occurred during the transmission. The predetermined number of iterations may be, for example, two. Depending on the result of the error detection, the decoding may stop, a request for retransmission of the message may be sent, or further iterations of decoding in the Turbo Code decoder may be carried out.

Abstract: A method of feedback in a wireless transmit receive unit includes providing a precoding matrix index (PMI), error checking the (PMI) to produce an error check (EC) bit, coding the PMI and the EC bit and transmitting the coded PMI and EC bit.

Abstract: A parity interleaving apparatus and method for variable length signaling information are disclosed. A parity interleaving apparatus according to an embodiment of the present invention includes a processor configured to generate a parity bit string for parity puncturing by segmenting parity bits of an LDPC codeword whose length is 16200 and whose code rate is 3/15, into a plurality of groups, and group-wise interleaving the groups using an order of group-wise interleaving; and memory configured to provide the parity bit string for parity puncturing to a parity puncturing unit.

Abstract: The present invention is related to a digital circuit testing and analysis module system comprising a memory (22). The memory (22) is addressed by numerical values defined by a group of digital signals. A respective memory location associated with a specific numerical value indicates a status of the group of digital signals. The status can for example reflect the validity of the signals in the group of signals when testing a circuit.

Abstract: There is provided a semiconductor apparatus including a memory controller; a CPU; a high-speed communication controller; a memory operation terminal group that includes a plurality of memory operation terminals for inputting a first signal propagating between an external memory group and the memory controller; a high-speed communication terminal group that includes a plurality of high-speed communication terminals for inputting a second signal to the high-speed communication controller; an inspection terminal group that includes a plurality of inspection terminals for acquiring information from the CPU and performing debugging; and a terminal mounting surface at which the memory operation terminal group, the high-speed communication terminal group, and the inspection terminal group are provided, in which at the terminal mounting surface, a first inspection terminal among the plurality of inspection terminals is located between the memory operation terminal group and the high-speed communication terminal group

Abstract: A memory system employs an addressing scheme to logically divide rows of memory cells into separate contiguous regions, one for data storage and another for error detection and correction (EDC) codes corresponding to that data. Data and corresponding EDC codes are stored in the same row of the same bank. Accessing data and corresponding EDC code in the same row of the same bank advantageously saves power and avoids bank conflicts. The addressing scheme partitions the memory without requiring the requesting processor to have an understanding of the memory partition.

Abstract: An example integrated circuit (IC) die in a multi-die IC package, the multi-die IC package having a test access port (TAP) comprising a test data input (TDI), test data output (TDO), test clock (TCK), and test mode select (TMS), is described. The IC die includes a Joint Test Action Group (JTAG) controller having a JTAG interface that includes a TDI, a TDO, a TCK, and a TMS, a first output coupled to first routing in the multi-die IC package, a first input coupled to the first routing or to second routing in the multi-die IC package, a master return path coupled to the first input, and a wrapper circuit configured to couple the TDI of the TAP to the TDI of the JTAG controller, and selectively couple, in response to a first control signal, the TDO of the TAP to either the master return path or the TDO.

Abstract: A method for dynamically handling the failure of the static random-access memory (SRAM) dynamic failure handling system using a cyclic redundancy check (CRC) includes obtaining a write data; determining a write address; storing the write data at the write address of a frame memory which is composed of the SRAM and includes a real address area and a spare address area which are distinguished from each other; storing, in response to the write address, a write cyclic redundancy check (CRC) generated by performing a CRC calculation on the write data; determining a read address; reading a read data from the read address of the frame memory; determining whether, based on the A CRC remainder W_CRC corresponding to the read address and the read data, a CRC error occurs, and generating an error flag when the CRC error occurs; determining a fault address based on the error flag; and mapping the fault address to one of non-fault spare addresses of the spare address area when the fault address is an address of the real a

Abstract: A transmitter is provided. The transmitter includes: a Low Density Parity Check (LDPC) encoder configured to encode input bits to generate an LDPC codeword including the input bits and parity bits to be transmitted in a current frame; a parity permutator configured to perform parity-permutation by interleaving the parity bits and group-wise interleaving a plurality of bit groups configuring the interleaved parity bits based on a group-wise interleaving pattern including a first pattern and a second pattern; a puncturer configured to puncture some of the parity-permutated parity bits; and an additional parity generator configured to select at least some of the punctured parity bits to generate additional parity bits to be transmitted in a previous frame of the current frame, based on the first pattern and the second pattern, wherein the first pattern determines parity bits to remain after the puncturing and then to be transmitted in the current frame.

Abstract: To provide a semiconductor device having a monitoring function with a higher degree of freedom. The semiconductor device includes: a function part that executes a predetermined process triggered according to an activation signal sent from an external device and outputs a completion signal after the predetermined process is completed; a first clocking part that monitors a first abnormality in the predetermined process based on the activation signal and the completion signal; and a branch part pair including a first branch part and a second branch part, wherein the first branch part branches the activation signal and then sends the branched activation signal to the function part and the first clocking part, and the second branch part branches the completion signal and then sends the branched completion signal to the first clocking part and the external device.

Abstract: A memory device to estimate a bit error count of data retrievable from a group of memory cells. For example, the memory device has a group of memory cells programmed to store a predetermined number of bits per memory cells to be read at a plurality of first voltages. The memory device determines a plurality of calibrated read voltages corresponding to the plurality of first voltages respectively, based on first signal and noise characteristics of the group of memory cells. The first signal and noise characteristics are used to compute second signal and noise characteristics of the group of memory cells for the calibrated read voltages. The second signal and noise characteristics are used in an empirical formula to compute an estimate of the bit error count of data retrievable from the group of memory cells using the calibrated read voltages.