Abstract: The present invention provides a porous metal-containing carbon-based material that is stable at high temperatures under aqueous conditions. The porous metal-containing carbon-based materials are particularly useful in catalytic applications. Also provided, are methods for making and using porous shaped metal-carbon products prepared from these materials.

Abstract: The method described herein may be characterized as reacting uranium dioxide with carbon to produce uranium carbide, and, reacting the uranium carbide with a silane, a silicon halide, a siloxane, or combinations thereof, and excess hydrogen to produce uranium silicide.

Abstract: A method of preparing a boron nitride material, such as boron nitride (BN) or boron carbonitride (BCN), is provided. The method may include providing a substrate, and sublimating an amine borane complex onto the substrate to obtain the boron nitride material. The amine borane complex may include, but is not limited to, borazine, amino borane, trimethylamine borane and triethylamine borane. In addition, the temperature at which the sublimating is carried out may be varied to control composition of the boron nitride material formed. In addition, various morphologies can be obtained by using the present method, namely films, nanotubes and porous foam.

Abstract: High quality, catalyst-free boron nitride nanotubes (BNNTs) that are long, flexible, have few wall molecules and few defects in the crystalline structure, can be efficiently produced by a process driven primarily by Direct Induction. Secondary Direct Induction coils, Direct Current heaters, lasers, and electric arcs can provide additional heating to tailor the processes and enhance the quality of the BN-NTs while reducing impurities. Heating the initial boron feed stock to temperatures causing it to act as an electrical conductor can be achieved by including refractory metals in the initial boron feed stock, or providing additional heat via lasers or electric arcs. Direct Induction processes may be energy efficient and sustainable for indefinite periods of time. Careful heat and gas flow profile management may be used to enhance production of high quality BNNT at significant production rates.

Abstract: The present invention relates to a method of manufacturing aluminum nitride and aluminum nitride prepared by the same. Pure aluminum powder having a median particle size (D50) of 1.52 ?m was heated to a temperature in a range of 595° C.˜900° C. in a nitrogen containing atmosphere comprising nitrogen and argon gases, at atmospheric pressure for one hour to obtain aluminum nitride with a degree of nitridation exceeding 93%. According to the present invention aluminum nitride may be produced with high yield using a simple and inexpensive one-step heating method in a relatively short period of time.

Abstract: A method of making carbon nanotubes doped with iron, nitrogen and sulfur for an oxygen reduction reaction catalyst includes the steps of mixing an iron containing oxidizing agent with a sulfur-containing dye to form a fibrous fluctuate of reactive templates and using these for in-situ polymerization of an azo compound to form polymer-dye nanotubes, adding an alkali to precipitate magnetite, and subjecting the nanotubes to pyrolysis, acid leaching, and heat treatment.

Abstract: The present invention provides method for producing a spherical aluminum nitride powder. In an embodiment, the method comprises mixing an Al precursor and a flux in a solvent to produce a mixed solution, spray-drying the mixed solution to form a spray-dried powder, mixing the spray-dried powder and a carbon-based material to form a mixture, heat treating the mixture in a nitrogen atmosphere to form a heat-treated compound, and decarbonizing the heat-treated compound in an air atmosphere, wherein the flux is at least one selected from the group consisting of Cu2O, TiO2, Bi2O3, and CuO, or a mixture of at least one selected from the group consisting of Cu2O, TiO2, Bi2O3, and CuO and at least one selected from the group consisting of CaF2 and Y2O3.

Abstract: A preparation method of an alumina-carbon nano tube composite powder material includes the steps of using an organometallic precursor as a raw material, using metal nanoparticles formed on the surface of the alumina powder as a catalyst, and simultaneously feeding a carbonaceous gas such as methane and acetylene, so as to grow a carbon nano tube in situ, and obtain an alumina-metal nanoparticle-carbon nano tube composite powder material through a chemical vapor deposition method under a temperature condition of 400 to 800° C. Through changing various parameters such as the weight of the organic raw material, the flow or constituent of reactant gases and reaction temperature, the decomposition of the organic raw material and the generation of the metal nanoparticles and the carbon nano tube are adjusted, and the size and the microstructure of the powder are controlled.

Abstract: A p-type SiC single crystal having lower resistivity than the prior art is provided. This is achieved by a method for producing a SiC single crystal in which a SiC seed crystal substrate is contacted with a Si—C solution having a temperature gradient such that the temperature decreases from the interior toward the surface, to grow a SiC single crystal, the method comprising: using as the Si—C solution a Si—C solution containing Si, Cr and Al, wherein the Al content is 3 at % or greater based on the total of Si, Cr and Al; and contacting a (0001) face of the SiC seed crystal substrate with the Si—C solution to grow a SiC single crystal from the (0001) face.

Abstract: Discrete, individualized carbon nanotubes having targeted, or selective, oxidation levels and/or content on the interior and exterior of the tube walls are claimed. Such carbon nanotubes can have little to no inner tube surface oxidation, or differing amounts and/or types of oxidation between the tubes' inner and outer surfaces. These new discrete carbon nanotubes are useful in plasticizers, which can then be used as an additive in compounding and formulation of elastomeric, thermoplastic and thermoset composite for improvement of mechanical, electrical and thermal properties.

Abstract: Inside a furnace body with a vacuum environment or under the inert gas protection, the raw silicon material used to produce silicon carbide is melted or vaporized in a high temperature environment over 1300° C., and then the melted or vaporized raw silicon material will react with the carbonaceous gas or liquid to form silicon carbide. The present invention uses the carbonaceous gas with no metallic impurities, to replace petroleum coke, resin, asphalt, graphite, carbon fiber, coal, charcoal and some other carbon sources used in current production processes. When the carburizing reaction is in progress, the raw silicon material is melted or vaporized and the reaction takes place in the air. No container is required, so impurity contamination is lessened, and the produced silicon carbide has a fairly high purity.

Abstract: A silicon nitride powder having a specific surface area of 4.0 to 9.0 m2/g, a ? phase proportion of less than 40 mass %, and an oxygen content of 0.20 to 0.95 mass %, wherein a frequency distribution curve obtained by measuring a volume-based particle size distribution by a laser diffraction scattering method has two peaks, peak tops of the peaks are present respectively at 0.4 to 0.7 ?m and 1.5 to 3.0 ?m, a ratio of frequencies of the peak tops ((frequency of the peak top in a particle diameter range of 0.4 to 0.7 ?m)/(frequency of the peak top in a particle diameter range of 1.5 to 3.0 ?m)) is 0.5 to 1.5, and a ratio D50/DBET (?m/?m) of a median diameter D50 (?m) determined by the measurement of particle size distribution to a specific surface area-equivalent diameter DBET (?m) calculated from the specific surface area is 3.5 or more.

Abstract: A method utilizes easily obtained carbon as carbon source for sintering, followed by high energy ball milling process with planetary ball mill for high energy homogenous mixing of the carbon source, solvent and nano-level silicon dioxide powder, along with a high energy ball milling process repeatedly performed using different sized ball mill beads, so as to formulate a spray granulation slurry with the optimal viscosity, to complete the process of micronization of carbon source evenly encapsulated by silicon dioxide powders. The optimal ratio of C/SiO2 is 1-2.5 to produce a spherical silicon dioxide powder (40-50 ?m) evenly encapsulated by the carbon source. The powder is then subjected to a high temperature (1450?) sintering process under nitrogen gas. Lastly, the sintered silicon nitride powder is subjected to homogenizing carbon removal process in a rotational high temperature furnace to complete the fabricating process.

Abstract: A platinum-carbon electrocatalyst material comprising a carbon support having a minimum BET surface area of 1000 m2/g, a nitrogen content of at least 2.5 weight percent, which is present in the form of pyridine, pyridone or pyrrole, a phosphorous content of at least 3 weight percent, which is present in the form of phosphate and phosphonate, and a plurality of platinum nanoparticles dispersed on the carbon support having a maximum average particle diameter of 1.5 nm.

Abstract: In one embodiment, a method of producing an sp3 bonded C3N4 product includes contacting a starting material with a catalyst solvent in a reaction vessel, heating the reaction vessel to a temperature of 900° to 2000° C. under a pressure of 4 to 8 GPa, melting at least some of the catalyst solvent, and transforming at least some of the sp2 bonded C3N4 into sp3 hybridized C3N4. The starting material may include sp2 bonded C3N4. The catalyst solvent may be a solid at room temperature. In one example, the catalyst solvent is a carbo-nitride based catalyst solvent including a first compound having the chemical formula AxByNz and a second compound having the chemical formula DqErCs. In a second example, the catalyst solvent is a metal alloy based catalyst solvent including a compound having the chemical formula GxHy.

Abstract: A method and apparatus for preparing boron nitride nanotubes (BNNTs) according to an embodiment may ensure mass-production, may increase yield by reducing a production time, and may prepare BNNTs with high purity. The method includes steps of providing a first powder including boron, forming a second powder including a boron precursor by nano-sizing the first powder, forming a precursor disk by mixing the second powder with a binder; and growing BNNTs on the precursor disk.

Abstract: In a method of chemical vapor deposition (CVD) growth of a polycrystalline diamond film in a CVD reactor, a gas mixture of gaseous hydrogen and a gaseous hydrocarbon is introduced into the CVD reactor. A plasma formed from the gas mixture is maintained above a surface of a conductive substrate disposed in the CVD reactor and causes a polycrystalline diamond film to grow on the surface of the conductive substrate. A temperature T at the center of the polycrystalline diamond film is controlled during growth of the polycrystalline diamond film. The CVD grown polycrystalline diamond film includes diamond crystallites that can have a percentage of orientation along a [110] diamond lattice direction?70% of the total number of diamond crystallites forming the polycrystalline diamond film.

Abstract: Carbon materials having carbon aggregates, where the aggregates include carbon nanoparticles and no seed particles, are disclosed. In various embodiments, the nanoparticles include graphene, optionally with multi-walled spherical fullerenes and/or another carbon allotrope. In various embodiments, the nanoparticles and aggregates have different combinations of: a Raman spectrum with a 2D-mode peak and a G-mode peak, and a 2D/G intensity ratio greater than 0.5, a low concentration of elemental impurities, a high Brunauer-Emmett and Teller (BET) surface area, a large particle size, and/or a high electrical conductivity. Methods are provided to produce the carbon materials.

Abstract: Embodiments of methods of altering the color of diamonds are disclosed. In an embodiment, a method for altering the color of diamonds includes identifying and selecting a diamond having a suitable nitrogen content, HPHT processing the selected diamond under diamond-stable conditions to alter the color of the selected diamond from a first color to a second color, irradiating the HPHT-processed diamond with an electron source having an energy between about 1 MeV and about 20 MeV so as to alter the color of the selected diamond from the second color to a third color, and annealing the irradiated diamond either under partial vacuum conditions, or under HPHT diamond-stable conditions so as to alter the color from the third color to a fourth color (e.g., pink, red, or purple, depending on the nitrogen content of the selected diamond).

Abstract: A method of processing diamond particles to form fluorescent color centers involves providing diamond particles containing at least one dopant; annealing the diamond particles in a vacuum or an inert atmosphere; creating vacancies in the annealed diamond particles by irradiating the diamond particles with high energy radiation; and while the annealed diamond particles are being irradiated, causing a temperature of the diamond particles to be at least a temperature at which vacancies in the diamond particles diffuse and combine with the at least one dopant to form fluorescent color centers. The procedure can be repeated at least twice. This abstract is not to be considered limiting, since other embodiments may deviate from the features described in this abstract.