Abstract: An improved apparatus and method for growing crystals from a melt employing a heat pipe, consisting of one or more sections, each section serving to control temperature and thermal gradients in the crystal as it forms inside the pipe.

Abstract: Apparatus and a method for separating gases and vapors from a geopressure or hydropressured brine without allowing precipitation of scale deposits on the walls of vessels and pipes. The apparatus includes a reactor having an inlet pipe provided with a Venturi throat and an expansion nozzle coupled with the throat to depressurize the brine to cause separation of the gases and vapors from the liquid and solid fractions of the brine. The gases and vapors travel out of the reactor through a central pipe extending downwardly and through the reactor. The brine in the form of a slurry gravitates in the reactor toward a first outlet pipe while clarified brine rises past in internal baffle and leaves the reactor through a second outlet pipe.

Abstract: A macrocrystalline or single crystal semiconductive material is formed from a primary substrate including a single crystal or several very large crystals of a relatively low-melting material. This primary substrate is deposited on a base such as steel or ceramic, and it may be formed from such metals as zinc, cadmium, germanium, aluminum, tin, lead, copper, brass, magnesium silicide, or magnesium stannide. These materials generally have a melting point below about 1000.degree. C. and form on the base crystals the size of fingernails or greater. The primary substrate has an epitaxial relationship with a subsequently applied layer of material, and because of this epitaxial relationship, the material deposited on the primary substrate will have essentially the same crystal size as the crystals in the primary substrate.

Abstract: An economical method is presented for forming thin sheets of crystalline silicon suitable for use in a photovoltaic conversion cell by solidification from the liquid phase. Two spatially separated, generally coplanar filaments wettable by liquid silicon and joined together at the end by a bridge member are immersed in a silicon melt and then slowly withdrawn from the melt so that a silicon crystal is grown between the edge of the bridge and the filaments.

Abstract: An apparatus and a method for the growth of an epitaxial layer on a substrate from a solution. Solution is brought into contact with a substrate in a narrow channel. Cooling fluid flowing through a second channel maintains the substrate temperature below the saturation temperature of the solution, and heating fluid flowing through a third channel maintains the wall of the narrow channel opposite the substrate above the saturation temperature of the solution.

Abstract: Extraction of commercially useful aromatic substances, fragrances and medicinal products from camomile is accomplished using liquid carbon dioxide. Good yields of heat labile components are obtained by this process.

Abstract: Polycrystalline and monocrystalline potassium polyphosphide, KP.sub.15, has been grown from the liquid phase at a temperature range of 600.degree.-700.degree. C. Massive crystallization of KP.sub.15 whiskers and platelets is observed. Crystalline KP.sub.15 films have been grown on gallium arsenide (110) and gallium phosphide (111) polished wafers, silicon (110) polished wafers, quartz, on a nickel evaporated 2000 angstrom nickel layer on quartz, and on nickel foil. Microcrystalline KP.sub.15 formed by a condensed phase process is incorporated into a sealed ampule evacuate 10.sup.-4 torr. The temperature is raised to 655.degree. C. and the furnace tilted to bring the melt in contact with the substrates. The temperature is then reduced to 640.degree. C. and the furnace is tilted back to the original position. Large KP.sub.15 whiskers several millimeters in size are grown from the melt and crystalline films of KP.sub.15 are grown topotaxially on gallium arsenide and gallium phosphide.

Abstract: To permit the output of a vertical fluidizing-cell column to be increased, its cross-sectional area to be enlarged, and the installation of plates in the column to be simplified, the plates are made conical or pyramidal with their concave and convex sides alternately directed upwardly. The plates have central openings for the passage of one stream of material, and are mounted in the column with peripheral passages for another stream of material. Preferably the plates are movable relative to each other and have movable center pieces variably closing some of the central openings for varying the operation of the column.

Abstract: A large single-crystalline film on an amorphous insulator is formed by high energy beam annealing. The crystal growth of a molten polycrystalline or amorphous film on the insulator is controlled to occur from the central region toward the outer edge of the molten zone. This control is accomplished by using, for example, a doughnut-shaped laser beam.

Abstract: Apparatus for producing low cost, high purity solar grade silicon ingots in single crystal or quasi single crystal ingot form in a substantially continuous operation in a two stage reactor starting with sodium fluosilicate and a metal more electropositive than silicon (preferably sodium) in separate compartments having easy vapor transport therebetween and thermally decomposing the sodium fluosilicate to cause formation of substantially pure silicon and a metal fluoride which may be continuously separated in the melt and silicon may be directly and continuously cast from the melt.

Abstract: Point defects or impurities, which are detrimental to the quality of elecnic components, can be eliminated by means of rearsurface damage, which induces dislocations and/or stacking faults, by means of mechanical stress to the semiconductor wafers used in the manufacture of those components. For this purpose, the semiconductor wafers are brought into contact, before polishing, oxidation and thermal treatment, with moving carrier bodies covered with an elastic carrier medium having abrasive grain bonded to it, which creates the desired mechanical stress by forming a large number of very fine scratches and fissures in the surface of the semiconductor wafers.

Abstract: A III-V group compound semiconductor single crystal is manufactured by a method which comprises adjusting the temperature of a fused layer of raw material for the crystal, based on the electric current signal flowing between a seed crystal and the fused layer of raw material for the crystal, the weight signal of the crystal, and the length signal of the crystal, to levels optimum for the growth of crystal during the contact of the seed crystal with the fused layer, during the formation of the shoulder part of the crystal, and during the formation of the barrel part of the crystal, respectively in the process of crystal growth.

Abstract: Demineralized crude water is distilled during flow along a first path which is defined by stationary parts. Such water is evaporated and thereafter cooled and condensed by a heat transfer medium which is circulated along an endless second path. Evaporation of crude water results in condensation of the medium, and condensation of resulting water vapors into distillate results in evaporation of the medium. The medium is caused to pass through a heat pump which raises its pressure and temperature before the thus heated medium exchanges heat with and evaporates crude water in the first path. The medium and/or the distillate can be used for preheating crude water upstream of the evaporating station, and the vapors are preferably purified by one or more cyclones, by an electrostatic filter and/or by ultrasonic waves intermediate the evaporating and condensing stations.

Abstract: Seed crystals are made in a region of a polycrystalline layer on a substrate using a beam of electrons. The beam is used to melt the region, which is then solidified from one end to the other in a first direction and outwardly toward the edges in a second direction normal to the first direction. Several different techniques can be used to promote solidification in the proper directions. The region can be heated non-uniformly and then cooled to maintain the desired temperature distribution. The region can also be cooled non-uniformly to provide the desired temperature distribution. The region can be heated non-uniformly using apparatus that controls the energy deposited in the region by the electron beam.

Abstract: Gallium arsenide single crystals are grown under an encapsulant of boron oxide which contains a predetermined amount of water in the range of 200 to 1000 ppm. The GaAs crystals so produced are stable in that the resistivity of the GaAs upon heat treatment remains substantially constant. The GaAs single crystals as produced may be subjected to a bulk anneal to further improve the stability.

Abstract: Thin free standing single crystal films can be produced by sputter depositing a layer of stressable metal onto a single crystal substrate, treating the composite so produced to effect stressing of the metal layer which then peels away with a portion of the single crystal substrate attached to the metal layer. The free standing film thus produced has typical thickness in the order of tens of micrometers. The metal layer can subsequently be removed by acid etching or other suitable etching techniques, to leave the free standing single crystal film, having a thickness from about 5 microns to about 50 or more.

Abstract: A silicon carbide seed layer is first formed on a (111) major surface of a silicon substrate through the use of the conventional chemical vapor deposition method. The silicon carbide seed layer includes a first surface confronting the silicon substrate. The first surface shows a predetermined grain alignment oriented with the (111) major surface of the silicon substrate even though the deposition is carried out at a temperature below the melting point of the silicon substrate. Then, the silicon substrate is melted so that the first surface of the silicon carbide seed layer is exposed to the molten silicon including a carbon source therein. In this way, a second silicon carbide layer is formed on the first surface of the silicon carbide seed layer through the use of a liquid-phase epitaxial growth method.

Abstract: An improved method is disclosed for growing directly on a substrate, crystals of silicon large enough to permit construction of an efficient solar cell therefrom.The silicon is transported to a deposition zone together with a growth modifier selected from the class consisting of a Group IV metal, a Group IB metal, the halide of a Group IV metal, the halide of a Group IB metal, or a mixture thereof. The silicon may be in the form of a metal vapor, a silane, or one or more halosilanes.

Abstract: A process for preparing a single oxide crystal comprising the steps of mixing to fuse raw materials for crystal growth and a flux, cooling the fused mixture slowly to grow and precipitate a single crystal, and dipping up said single crystal from the molten flux while said flux is molten. A substitution amount of the substituted element in the grown crystal can be controlled. The crystal thus obtained is of high quality with little cracks.

Abstract: Disclosed herein is a selective epitaxial growth method for forming an opening, utilizing anisotropic dry etching, in a silicon oxide film formed on a silicon substrate and epitaxially growing a silicon layer selectively in the opening. The anisotropic dry etching is performed employing a mixed gas of carbon tetrafluoride and hydrogen, and the wall surface of the opening is perpendicular to the major surface of the silicon substrate. The epitaxial growth is achieved under a temperature of 900.degree. to 1100.degree. C. utilizing a mixed gas of a low pressure under 100 Torr. containing dichlorosilane as a silicon source and hydrogen as a carrier gas. A silicon layer thus obtained contains substantially no lattice defects such as a stacked fault.